JP4639607B2 - 鉛フリー半田材料およびPbフリー半田材料の製造方法 - Google Patents
鉛フリー半田材料およびPbフリー半田材料の製造方法 Download PDFInfo
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Description
2 半導体チップ(半導体素子)
3 リードフレーム
4 ダイボンド半田接続部
5 ボンディングワイヤー
6 樹脂
7 リード
8 基板
9 タブ部
11 ボイド
12 ベース半田
13 Pbフリー金属
14 添加金属
16 半田箔
17 クラック
20 ロール
Claims (7)
- ベース半田と金属とを有し、接続する半導体チップとともに樹脂によって封止される半導体装置に用いられるダイボンド半田接続用の鉛フリー半田材料であって、
前記ベース半田は、Sn単体もしくはSnを主成分とする化合物であるとともに、240℃から260℃では溶融状態となる半田であり、
前記金属は、240℃から260℃において溶融しない鉛フリーの金属であり、
半田材料における前記鉛フリーの金属の割合は40体積%から80体積%であり、
前記鉛フリーの金属同士は金属結合せず、前記ベース半田内で前記鉛フリーの金属が浮島状に分布しており、
前記半田材料は、前記ベース半田に、前記ベース半田との間で化合物を形成する添加金属を添加し、前記ベース半田の液相線、および前記ベース半田と前記添加金属により形成される合金の液相線以上の温度に加熱し、前記ベース半田と前記添加した添加金属のうちの全ての添加金属とを固溶させた後に冷却し前記鉛フリーの金属を析出させることにより形成されており、前記鉛フリーの金属と前記ベース半田とは相平衡状態にあることを特徴とする鉛フリー半田材料。 - 請求項1記載の鉛フリー半田材料であって、
前記ベース半田との間で化合物を形成する添加金属はCuであり、前記Cuの前記半田材料に対する割合が10重量%から20重量%の間であり、
前記加熱及び冷却をすることにより前記金属としてのCu−Sn化合物を析出させることを特徴とする鉛フリー半田材料。 - 240℃以下で溶融するベース半田と、260℃で溶融しない鉛フリーの金属とを備え、接続する半導体チップとともに樹脂によって封止される半導体装置に用いられるPbフリー半田材料の製造方法であって、
Sn単体もしくはSnを主成分とする化合物であるベース半田に、前記ベース半田との間で化合物を形成する添加金属を添加する工程と、
前記ベース半田の液相線、および前記ベース半田と前記添加金属により形成される合金の液相線以上の温度に加熱し、前記ベース半田と前記添加する工程で添加した前記添加金属のうち全ての添加金属とを反応させる工程と、
前記反応させた半田材料を冷却し、前記ベース半田内に前記ベース半田と前記添加金属の化合物である前記鉛フリーの金属を析出させる工程と、を有し、
前記析出させる工程により析出された前記ベース半田と前記添加金属の化合物を含むはんだ箔における前記化合物の割合は、40体積%から80体積%であることを特徴とするPbフリー半田材料の製造方法。 - 請求項3記載のPbフリー半田材料の製造方法であって、
前記ベース半田との間で化合物を形成する添加金属はCu、Au、Fe、Ni、Pt、Agのいずれかであることを特徴とするPbフリー半田材料の製造方法。 - 請求項3記載のPbフリー半田材料の製造方法であって、
前記ベース半田との間で化合物を形成する添加金属はCuであり、前記Cuの前記半田材料に対する割合が10重量%から20重量%の間であり、
前記析出させる工程では、Cu−Sn化合物を析出させることを特徴とするPbフリー半田材料の製造方法。 - 請求項3乃至5のいずれか1項に記載のPbフリー半田材料の製造方法であって、
前記析出させる工程により析出された前記ベース半田と前記添加金属の化合物は、240℃から260℃において溶融しない鉛フリーの金属であることを特徴とするPbフリー半田材料の製造方法。 - 請求項3記載のPbフリー半田材料の製造方法であって、
前記はんだ箔において、前記ベース半田と前記添加金属の化合物同士は金属結合せず、前記ベース半田内で前記ベース半田と前記添加金属の化合物が浮島状に分布していることを特徴とするPbフリー半田材料の製造方法。
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