JP2005252030A - 鉛フリー半田材料および半田材料の製造方法 - Google Patents
鉛フリー半田材料および半田材料の製造方法 Download PDFInfo
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Abstract
【解決手段】240℃から260℃のリフロー温度で溶融するベース半田12と溶融しないPbフリー金属13を有し、Pbフリー金属13の割合が40〜80体積%である半田材料である。さらにPbフリー金属13の部分がベース半田12の中で浮島状に存在する。
【選択図】 図3
Description
2 半導体チップ(半導体素子)
3 リードフレーム
4 ダイボンド半田接続部
5 ボンディングワイヤー
6 樹脂
7 リード
8 基板
9 タブ部
11 ボイド
12 ベース半田
13 Pbフリー金属
14 添加金属
16 半田箔
17 クラック
20 ロール
Claims (10)
- ベース半田と金属を有するダイボンド半田接続用の鉛フリー半田材料であって、
前記ベース半田は、Sn単体もしくはSnを主成分とする化合物であり、
前記金属は、240℃から260℃において溶融しない鉛フリーの金属であり、
半田箔における前記鉛フリーの金属の割合は40%から80%であり、
さらに前記鉛フリー金属同士は金属結合せず、前記ベース半田内で前記鉛フリー金属が浮島状に分布していることを特徴とする鉛フリー半田材料。 - 請求項1に記載の鉛フリー半田材料であって、
前記金属部分の大きさが3から15μmであることを特徴とする鉛フリー半田材料。 - 請求項1または2に記載の鉛フリー半田材料であって、
前記ベース半田がSn―Ag−Cu系半田であることを特徴とする鉛フリー半田材料。 - 請求項1から3のいずれか1項に記載の鉛フリー半田材料であって、
前記金属部分は、Cu-Sn化合物、Ni-Sn化合物、Ag-Sn化合物またはこれらの複合化合物であることを特徴とする鉛フリー半田材料。 - 請求項1から3のいずれか1項に記載の鉛フリー半田材料であって、
前記金属部分はCu6Sn5化合物であることを特徴とする鉛フリー半田材料。 - 請求項1から3のいずれか1項に記載の鉛フリー半田材料であって、
前記金属部分は、Znを主成分とする固相またはAlを主成分とする固相であることを特徴とする鉛フリー半田材料。 - 請求項1から6のいずれか1項に記載の鉛フリー半田材料であって、
前記ベース半田と前記金属は相平衡状態になっていることを特徴とする鉛フリー半田材料。 - 請求項1から7のいずれか1項に記載の鉛フリー半田材料であって、
前記鉛フリー半田材料は圧延されて箔状であることを特徴とする鉛フリー半田材料。 - 請求項1から7のいずれか1項に記載の鉛フリー半田材料であって、前記鉛フリー半田材料はワイヤ状であることを特徴とする鉛フリー半田材料。
- 半田材料の製造方法であって、
Sn単体もしくはSnを主成分とする化合物であるベース半田に、少なくともCu、AgまたはNiのいずれかの金属を添加する工程と、
ベース半田の液相線、およびベース半田と添加金属により形成される合金の液相線以上の温度に加熱し、ベース半田と添加金属を反応させる工程と、
前記ベース半田内にベース半田と添加金属の化合物を析出させる工程を有し、
さらに、前記金属を添加する工程では、前記析出する添加金属の割合が半田材料に対して30%から70%となるようにCu、AgまたはNiのいずれかの金属を添加することを特徴とする半田材料の製造方法。
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JP2007067158A (ja) * | 2005-08-31 | 2007-03-15 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
JP2013510240A (ja) * | 2009-11-05 | 2013-03-21 | オーメット サーキッツ インク | 冶金ネットワーク組成物の調製およびその使用方法 |
WO2018056315A1 (ja) * | 2016-09-21 | 2018-03-29 | 新日鉄住金マテリアルズ株式会社 | 複層金属ボール |
JP2018103222A (ja) * | 2016-12-27 | 2018-07-05 | 有限会社 ナプラ | 半導体装置 |
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JP2018103222A (ja) * | 2016-12-27 | 2018-07-05 | 有限会社 ナプラ | 半導体装置 |
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