CN102272964A - 具有放射状阻挡体的磁存储器单元 - Google Patents

具有放射状阻挡体的磁存储器单元 Download PDF

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CN102272964A
CN102272964A CN2009801537529A CN200980153752A CN102272964A CN 102272964 A CN102272964 A CN 102272964A CN 2009801537529 A CN2009801537529 A CN 2009801537529A CN 200980153752 A CN200980153752 A CN 200980153752A CN 102272964 A CN102272964 A CN 102272964A
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CN102272964B (zh
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P·安德森
S·薛
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Seagate Technology LLC
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Abstract

磁性隧穿结单元与制造磁性隧穿结单元的方法，该磁性隧穿结包括至少紧邻单元的铁磁自由层(112)延伸的放射状保护层(120)。可特定地选择该放射状保护层的厚度、沉积方法、材料成分、和/或沿着单元层的程度以便增强自由层的有效磁性质，有效磁性质包括有效矫顽力、有效磁各向异性、有效磁矩散布、或有效自旋极化。

Description

具有放射状阻挡体的磁存储器单元
背景技术
还称作自旋转移或自旋扭矩的自旋扭矩转移技术结合半导体技术与磁学，且是最近发展的。在自旋扭矩转移中，是电子自旋而不是电荷被用来指示数字信息的存在。表示为“0”或“1”的数字信息或数据可存储在磁性元件内的磁矩排列中。磁性元件的阻抗取决于力矩排列或取向。通过检测组件的阻态从元件读出存储的状态。
磁性元件一般包括各自具有磁化方向的铁磁被钉扎层与铁磁自由层，且非磁性阻挡层存在于它们之间。这些层的任何一个可以是多层。自由层与被钉扎层的磁化方向定义整体磁性元件的阻抗。这种元件通常称作“自旋隧穿结”、“磁性隧穿结”、“磁性隧穿结单元”等。当自由层与被钉扎层的磁化方向平行时，元件的阻抗低。当自由层与被钉扎层的磁化方向反平行时，元件的阻抗高。
至少由于尺寸小，将磁性隧穿结单元元件用于诸如磁硬盘驱动读取头、磁传感器、以及非易失性随机存取存储器等许多应用中是合乎要求的。总是期望改进并发展磁性隧穿结单元及其制造。
概述
本公开涉及磁性隧穿结单元以及磁性隧穿结单元的制造方法。本公开的磁性隧穿结单元包括放射状保护层，其至少紧邻单元的铁磁自由层延伸。可特定地选择该放射状保护层的厚度、沉积方法、材料成分、和/或沿着单元层的程度以便增强自由层的有效磁性质，有效磁性质包括有效矫顽力、有效磁各向异性、有效磁矩散布、或有效自旋极化。
在一个特定实施例中，本公开涉及磁性隧穿结单元，该单元具有铁磁自由层、铁磁被钉扎层、以及它们之间的阻挡层。保护层至少放射状地包围自由层，而电绝缘隔离层至少放射状地包围阻挡层。绝缘材料放射状地包围自由层、被钉扎层、阻挡层、保护层、以及隔离层的全部。
在另一特定实施例中，本公开涉及磁性隧穿结单元，该单元具有铁磁自由层、铁磁被钉扎层、以及它们之间的阻挡层。保护层至少放射状地包围自由层，其中保护层抑制从自由层出来或进入自由层的材料的放射状迁移或扩散。绝缘材料放射状地包围自由层、被钉扎层、阻挡层、以及保护层的全部。
在又一特定实施例中，本公开涉及制造磁性隧穿结单元的方法，该方法包括提供起始堆叠物，起始堆叠物按顺序包括铁磁被钉扎层、阻挡层、铁磁自由层、金属层、以及掩模层。该方法包括移除一部分掩模层以便留下图案化的掩模材料，然后移除一部分的金属层与一部分的自由层以便留下图案化的金属层与图案化的自由层。此后，该方法包括至少在自由层周围形成放射状保护层，并移除一部分的阻挡层以留下图案化阻挡层。该方法还包括至少在图案化阻挡层周围形成放射状隔离层。
通过阅读下面的详细描述，这些以及各种其它的特征和优点将会显而易见。
附图简要说明
考虑下面与附图相结合的本公开的各种实施例的详细描述，可以更加全面地理解本发明：
图1A是处于低阻态的示例性磁性隧穿结单元的截面示意图；图1B是处于高阻态的磁性隧穿结单元的截面示意图；
图2是来自磁性隧穿结单元的第一制造步骤的元件的示意性截面图；
图3是来自磁性隧穿结单元的第二制造步骤的元件的示意性截面图；
图4A是来自磁性隧穿结单元的第三制造步骤的元件的示意性截面图；图4B是来自磁性隧穿结单元的第三制造步骤的替代元件的示意性截面图；
图5是来自磁性隧穿结单元的第四制造步骤的元件的示意性截面图；
图6是来自磁性隧穿结单元的第五制造步骤的元件的示意性截面图；
图7是来自磁性隧穿结单元的第六制造步骤的元件的示意性截面图；
图8是来自磁性隧穿结单元的第七制造步骤的元件的示意性截面图；
图9是磁性隧穿结单元的第八制造步骤的示意性截面图；
图10是来自磁性隧穿结单元的第九制造步骤的元件的示意性截面图；
图11是来自磁性隧穿结单元的第十制造步骤的元件的示意性截面图；
图12是来自磁性隧穿结单元的第十一制造步骤的元件的示意性截面图；
图13是来自磁性隧穿结单元的第十二制造步骤的元件的示意性截面图；
图14是来自磁性隧穿结单元的第十三制造步骤的元件的示意性截面图；
图15是通过前面的步骤所得的磁性隧穿结单元的示意性侧视图；以及
图16是沿着图15的线16-16截取的磁性隧穿结的示意性截面图。
各附图不一定按比例绘制。附图中使用的类似附图标记表示类似组件。然而，应该理解，使用附图标记指代给定附图中的某个组件并不对其它附图中用相同附图标记标示的组件构成限制。
发明详述
本公开涉及具有隧穿阻挡层的存储器单元或任何磁传感器以及制造这些单元或传感器的方法。本公开的装置(例如，磁性隧穿结单元)包括放射状保护层，其至少紧邻单元的铁磁自由层延伸。该装置还可包括放射状隔离层，其紧邻单元的阻挡层延伸。保护层与放射状隔离层两者或任一个可抑制自由层成分的变化(例如，进入或出自自由层的化学物种的扩散或迁移)。
在以下说明书中，参照构成说明书一部分并以示例方式示出若干特定实施例的一组附图。应该理解，可以构想出其它实施例，但不脱离本公开的范围或精神。因此，下面的详细说明不应理解为限定。本文提供的定义是为了便于本文频繁使用的某些术语的理解并且不旨在限定本公开的范围。
除非另行指定，在说明书和权利要求书中使用的表示特征尺寸、量和物理特性的全部数字应当理解为在任何情形下可由术语“大约”进行修饰。因此，除非明示相反情形，否则前述说明书和所附权利要求书中阐述的数字参数是近似值，这些近似值能根据由本领域内技术人员尝试利用本文披露的教示获得的所需特性而改变。
如说明书以及所附权利要求书中所使用地，单数形式的“一”、“该”以及“所述”涵盖具有复数对象的实施方式，除非上下文明确地指出其它情形。如说明书和所附权利要求书中使用地，术语“或”通常用于包括“和/或”的语境中，除非内容明确地指出相反情形。
本公开涉及磁性隧穿结单元以及磁性隧穿结单元的制造方法。本公开的磁性隧穿结单元包括放射状保护层，其至少紧邻单元的铁磁自由层延伸。尽管本公开并非局限于此，然而本公开各个方面的理解可通过下面提供的示例阐述而获得。
图1A与1B是一般磁性隧穿结单元10的截面示意图；在图1A中，单元10处于低阻态，其中磁化方向平行，而在图1B中，单元10处于高阻态，其中磁化方向反平行。
磁性隧穿结单元10包括铁磁自由层12和铁磁基准(即，被钉扎(pinned))层14。反铁磁钉扎(pinning)层16紧邻被钉扎层14。铁磁自由层12与铁磁被钉扎层14由氧化物阻挡层13或非磁性隧穿阻挡层分隔开。铁磁层12、14可由例如Fe、Co、或Ni以及诸如NiFe与CoFe的其合金等任何有用铁磁(FM)材料制成。诸如CoFeB的三重合金可能尤其有用，因为它们具有较低力矩与高极化比，这些对于自旋电流切换而言是合乎要求的。自由层12与被钉扎层14的任一个或两者可能是单层或是多层，如合成反铁磁(SAF)耦合结构，即，由诸如Ru或Cu等金属分隔件分隔开的两个铁磁子层，其中子层的磁化方向处于相反方向以便提供平衡或非平衡磁化。钉扎层16可以是诸如PtMn、IrMn等的反铁磁规则材料(AFM)。阻挡层13可由例如氧化物材料(例如，Al2O3、TiOx、MgO、ZnO、HfO、GaO、以及它们的各种组合)的电绝缘材料来制成。也可使用其它适合的材料。可取决于工艺可行性与装置可靠性用自由层12或用被钉扎层14可选地图案化阻挡层13。
第一电极15经由钉扎层16与铁磁被钉扎层14电接触，而第二电极17与铁磁自由层12电接触。可存在诸如籽层的其它层。由导电材料(通常是例如Cu、Ti、TiN、Ta、TaN、W的金属)制成的电极15、17将铁磁层12、14电连接到提供通过层12、14的读写电流的控制电路。磁性隧穿结单元10两端的阻抗由铁磁层12、14的磁化向量的相对方向或磁化方向来确定。铁磁被钉扎层14的磁化方向通过钉扎层16被钉扎在预定方向上，而铁磁自由层12的磁化方向在自旋扭矩效应的影响下自由旋转。图1A示出处于低阻态的磁性隧穿结单元10，其中铁磁自由层12的磁化方向是平行的并处于与铁磁被钉扎层14磁化方向相同的方向中。这通常被称为低阻态或“0”数据状态。图1B示出处于高阻态的磁性隧穿结单元10，其中铁磁自由层12的磁化方向是反平行的并处于与铁磁被钉扎层14磁化方向相反的方向中。这通常被称为高阻态或“1”数据状态。
当流过磁性隧穿结单元10的磁性层的电流变为自旋极化并将自旋扭矩施加在磁性隧穿结单元10的自由层12上时，通过自旋转移发生磁性隧穿结单元10的阻态切换以及因此切换数据状态。当将足够的自旋扭矩施加于自由层12时，自由层12的磁化方向可在两个相反方向之间切换，并因此磁性隧穿结单元10可在平行状态(即，低阻态或“0”数据状态)和反平行状态(即，高阻态或“1”数据状态)之间切换。
示例性自旋转移扭矩磁性隧穿结单元10可用来构造存储器装置，其中通过改变自由层12相对于被钉扎层14的相对磁化状态来将数据位存储在磁性隧道结单元中。可通过测量随自由层12相对于被钉扎层14的磁化方向而改变的单元10的阻抗来读出所存储的数据位。为了使自旋转移扭矩磁性隧穿结单元10具有非易失随机存取存储器的特征，自由层12对于随机波动表现出热稳定性，从而自由层12的方向仅当受到控制以作出这种改变时才会改变。该热稳定性可使用不同方法经由磁各向异性而获得，例如改变位大小、形状和晶体各向异性。可通过要么借助交换要么借助磁场对其它磁性层的磁耦合来获得附加的各向异性。通常来说，各向异性使得软轴和硬轴形成在薄磁性层中。硬轴和软轴是通过在该方向中完全旋转(饱和)磁化方向所需的通常以磁场形式的外部能量的大小定义的，其中硬轴要求较高的饱和磁场。
根据本公开的制造磁性隧穿结单元的方法在图2-12中逐步骤地示出。总体而言，本公开的磁性隧穿结单元可通过诸如化学气相沉积(CVD)、物理气相沉积(PVD)、原子层沉积(ALD)、光刻、或其它薄膜沉积技术等的公知薄膜技术以及通过湿法或干法蚀刻、离子研磨、反应离子蚀刻(干法蚀刻的一种形式)、或其它薄膜移除技术来制成。本公开的方法通过一系列特定步骤与步骤顺序生产具有期望特性与性质的磁性隧穿结单元。
在图2中示出起始堆叠物1000。起始堆叠物1000包括已通过已知薄膜技术在衬底上形成(例如，沉积)的多个层。起始堆叠物1000包括在最终磁性隧穿结单元中将作为电极的金属层105、在最终磁性隧穿结单元中将作为钉扎层的反铁磁(AFM)材料116、在最终磁性隧穿结单元中将作为被钉扎层的铁磁(FM)材料114、以及在最终磁性隧穿结单元中将作为自由层的铁磁(FM)材料112。还可存在籽层和/或覆层。FM材料112与FM材料114的任一个或两者的厚度通常小于6nm，例如，约为2-3nm，虽然它们还可更薄或更厚。AFM材料116通常约为5-20nm厚。阻挡材料113在FM材料112与FM材料114之间，阻挡材料113将在最终磁性隧穿结单元中作为隧穿阻挡层。阻挡材料113的厚度通常小于约10埃，且合适材料的示例包括诸如氧化物等非导电材料。
堆叠物1000还包括硬掩模材料118以及硬掩模118与FM材料112之间的蚀刻停止体115。硬掩模材料的示例包括金属材料(例如，Ta、W、Ti、TaN、TiN)与非金属材料(例如，C)。硬掩模材料118的厚度通常约为40-200nm，这取决于材料；举例而言，金属硬掩模材料(例如，Ta、TaN、Ti、TiN)的厚度约为200nm，而包括C的硬掩模材料的厚度小于约100nm，例如，约为40nm厚。蚀刻停止体115提供防止在移除硬掩模118期间无意中移除FM材料112的阻挡体，如以下讨论。蚀刻停止体115可能是导电的；蚀刻停止体115的材料示例包括Ru、Ti、W与Ta金属以及诸如TiN、TaN等材料。存在于硬掩模材料118上的是光刻胶层119。光刻胶层119的形状与大小(例如，宽度)接近最终磁性隧穿结单元的形状与大小。在本实施例中，金属层105没其它层大(例如，宽)。放置诸如SiO2的绝缘材料102来填充衬底与AFM材料116之间的容积。
在图3中，未被光刻胶119覆盖的硬掩模材料118例如通过蚀刻被移除。蚀刻停止体115提供防止在移除硬掩模118期间无意中移除FM材料112的阻挡体。蚀刻停止体115沉积或以其它方式施用于FM材料112，且特定地选择厚度、沉积方法与材料成分以便在后续步骤中向FM材料112提供机械及化学保护。具体地，蚀刻停止体115针对可改变FM材料112的磁性质与电性质、或造成其化学腐蚀的高能离子、自由基或化学物种提供保护。按期望移除硬掩模118后，可通过常规过程来移除光刻胶119。
在图4A中，例如通过反应离子蚀刻或离子研磨来移除未被图案化的硬掩模118覆盖的FM材料112与蚀刻停止体115。阻挡材料113至少实质上不受影响。在一些实施例中，如图4B中，一些FM材料112可再沉积在FM材料112的边缘上并可选地再沉积在停止蚀刻体115与硬掩模118上，从而形成包围FM材料112、可选地包围蚀刻停止体115、并可选地包围硬掩模材料118的环形层。
另外，在图4A与4B中示出放射状地包围FM材料112、蚀刻停止体115与硬掩模材料118并在FM材料112的环形层(如果存在)外部的保护层120(如图4B)。保护层120至少延伸FM材料112的高度，且可能沿着蚀刻停止体115、硬掩模层118、以及FM材料112上的任何附加层延伸地更高。可通过常规技术施加(例如，沉积)保护层120，或者保护层120可以是来自FM材料移除过程的反应产物。保护层120可具有恒定厚度(如图4B所示)或具有变化的厚度(如图4A所示)。保护层120的合适材料的示例包括Si3N4、SiO2、SiOxNy、AlN、MgO、Al2O3、Ta2O5、Ta、Ru、W、TiW、TaN、TiN、低K材料、以及它们的各种组合。选择保护层120的特定构造(即，厚度、沉积方法、材料成分、以及沿着FM材料112与诸上层的程度或高度等)以便给FM材料112提供针对后续处理的机械及化学保护。具体地，保护层120向FM材料112提供针对可改变自由层的磁性质与电性质、或造成其化学腐蚀的高能离子、自由基或化学物种的保护。例如，保护层120防止进入FM材料112或从FM材料112出来的材料的放射状迁移和/或扩散，如FM材料112的分子、原子或离子的任一个或全部。此外，保护层120可抑制进入到阻挡材料113或从组成材料113出来的材料的放射状迁移和/或扩散。可从FM材料112或阻挡材料113迁移或扩散出来的原子、分子及离子包括Mn、O、B、Mg、N2及H2O的任一个或全部。
另外，选择保护层120的特定构造(即，厚度、沉积方法、材料成分、以及沿着FM材料112与诸上层的程度或高度等)以增强所得磁性隧穿结单元中的所得自由层的有效磁性质，有效磁性质包括自由层的有效矫顽力、有效磁各向异性、有效磁矩散布、或有效自旋极化。磁各向异性可因为材料或应力性质而受到影响。归因于该保护层120所提供的保护，该层允许自对准地移除传感器堆叠体的其余层，这从而允许密集的图案化。此外，通过保护层120的厚度，可相对于FM材料112按照意愿调节FM材料114的大小。
在图5中，例如通过反应离子蚀刻或通过离子研磨来移除阻挡材料113的未被FM材料112所覆盖的部分。FM材料112与诸上层作为图案化掩模。在一些实施例中，阻挡材料113具有底切部分。阻挡材料113下的FM材料114至少实质上未被干扰。
在图6中，在FM材料114、阻挡材料113上，以及至少部分地在保护层120与后续层上施加隔离层122。隔离层122至少延伸穿过隧穿阻挡材料113，且有可能沿着包括FM材料112、硬掩模118与任何附加叠层的图案化特征(图5的示例)延伸更高。隔离层122优选填充可能存在的阻挡层113的任何底切部分。隔离层122具有约为2-30nm的厚度，且由诸如(多个)氧化物、(多个)氮化物等电绝缘材料，和/或FM材料112、114、或AFM材料116的材料的(多个)氧化物或(多个)氮化物形成。隔离层122的适合材料的示例包括Si3N4、SiO2、SiOxNy、SiOCN、Ta2O5、Al2O3、MgO、以及其它低K电介质，其中Ta2O5、Al2O3、MgO是优选材料。
选择隔离层122的特性(即，厚度、沉积方法、材料成分、以及沿着装置边缘的程度等)以便向阻挡材料113提供针对后续处理的机械及化学保护。尤其，隔离层122在所得磁性隧穿结单元中为阻挡层提供针对可造成选择性电击穿或沿着阻挡体边缘的电流分路或化学腐蚀的高能离子或化学物种。由于隔离层122为阻挡材料113提供的保护，该层允许自对准地移除堆叠体的其余层(例如，FM材料114、AFM材料116等)，这从而允许对多层叠层进行密集图案化。具体地，在所得磁性隧穿结单元中，隔离层122禁止以及优选地防止从底电极(例如，磁性隧穿结单元10的电极15)到顶电极(例如，磁性隧穿结单元10的电极17)的电流传导。
在图7中，移除一部分的隔离层122；典型地，被移除的是FM材料116与硬掩模材料118上的部分。可通过各向异性蚀刻来移除隔离层122以便移除隔离层122的水平部分(即，与驻有堆叠体的衬底一般垂直的部分)。在图7中，所示隔离层122具有刻面，这是各向异性蚀刻的常见产物。
在图8中，例如通过反应离子蚀刻或通过离子研磨来移除FM材料114与AFM材料116的未被隔离层122所覆盖的部分。在一些实施例中，一些AFM材料116可在FM材料114与隔离层122的边缘上再沉积，且归因于材料移除过程，形成示为放射状层124的环形层。如果存在，该再沉积的AFM材料的厚度通常小于约20nm，在一些实施例中约3-6nm厚。氧化再沉积的放射状层124以便提供非导电材料可能是合乎要求的。替代地，环形层124可能是来自FM材料与AFM材料的移除过程的反应产物，且可包括那些材料的(多种)氧化物、(多种)碳化物、和/或(多种)氮化物。示为堆叠体1001的所得结构包括配置成准备好被用作磁性隧穿结单元的功能层。
在图9中，在堆叠体1001上施加阻挡层125。该分隔件或阻挡层125在堆叠体1001与其各层周围提供非多孔阻挡体。水平布置的阻挡层材料可被移除(例如，被蚀刻)；图10。所得结构示为堆叠体1002。
图11与12示出将堆叠体1002装入电绝缘材料102中(图11)以及然后移除一部分该绝缘材料102以使其与硬掩模材料118齐平(图12)。
在图13中，如果硬掩模材料118是非导电材料，去除硬掩模材料118并用导电材料107(例如，诸如Cu、W、Al、Ag与Au等的金属)来替换，这将成为所得磁性隧穿结单元的电极(例如，磁性隧穿结单元10的电极17)。在施加导电材料107的步骤期间，蚀刻停止体115向FM材料112提供机械及化学保护。但是，如果硬掩模材料118是导电的(例如，金属)，则保持硬掩模材料118并在材料118上布置导电材料107。在图14中，移除过量导电材料107以便获取期望形状的所得电极。在图15与图16中，所得磁性隧穿结单元被示作单元1100。
磁性隧穿结单元1100包括铁磁(FM)自由层1112和铁磁(FM)基准(即，被钉扎)层1114。反铁磁(AFM)钉扎层1116紧邻FM被钉扎层1114。由阻挡层1113来分隔开FM自由层1112与FM被钉扎层1114。FM层1112、1114可由例如Fe、Co、或Ni以及诸如NiFe、CoFe与CoFeB的其合金等任何有用铁磁(FM)材料制成。第一电极1105经由AFM层1116与FM被钉扎层1114电接触，而第二电极1107经由层1115与FM基准层1112电接触。电极1115、1117将铁磁层1112、1114电连接至提供通过层1112、1114的读写电流的控制电路。
放射状地至少包围阻挡层1113的是隔离层1122。隔离层1122向阻挡层1113提供针对可能造成选择性电击穿或沿着阻挡体边缘的电流分路或化学腐蚀的高能离子或化物物种的保护。放射状地至少包围FM自由层1112，并置于隔离层1122与FM自由层1112之间的是保护层1120。保护层1120增强FM自由层1112的有效磁性质，有效磁性质包括自由层的有效矫顽力、有效磁各向异性、有效磁矩散步、或有效自旋极化。在一些实施例中，保护层1120抑制例如在FM自由层1112与隔离层1122之间的贯穿保护层的原子、离子或分子的迁移和/或扩散。放射状地包围保护层1120与隔离层1122的是环形层1124，环形层1124通常由来自FM被钉扎层1114、AFM钉扎层1116、或其氧化物和/或氮化物的材料制成。通过具有隔离层外部的环形层1124，隔离层1122抑制并优选防止通过环形层1124从第一电极1105到第二电极1107的电流传导，且因此抑制并优选防止FM自由层1112的旁路。在图16中示出这些各种环形层的视图，在其中可观察到FM自由层1112被保护层1120、隔离层1122、以及环形层1124环绕。放射状地包围环形层1124的是非多孔阻挡体或分隔层1125。尽管在图16中示出各环绕层在FM自由层1112周围具有变化的厚度，但是在一些实施例中，当各层环绕FM自由层1112与任何中间层时，各层厚度将是恒定的。
从而公开了具有放射状阻挡体的存储器单元的实施例。上述的实现和其他实现落入所附权利要求的范围内。本领域内技术人员将理解，本公开可通过这里公开以外的其它实施方式来实现。所披露的实施例以阐述而非限定为目的给出，并且本发明仅由所附权利要求书限定。

Claims (20)

1.一种磁性隧穿结单元，包括：
铁磁自由层、铁磁被钉扎层、以及它们之间的阻挡层；
放射状地至少包围所述自由层的保护层；
放射状地至少包围所述阻挡层的电绝缘隔离层；以及
放射状地包围所述自由层、被钉扎层、阻挡层、保护层、以及隔离层的全部的绝缘材料。
2.如权利要求1所述的磁性隧穿结单元，其特征在于，所述保护层包括Si3N4、SiO2、SiOxNy、AlN、MgO、Al2O3、Ta2O5、Ta、Ru、W、TiW、TaN或TiN。
3.如权利要求1所述的磁性隧穿结单元，其特征在于，所述隔离层包括Si3N4、SiO2、SiOxNy、SiOCN、Ta2O5、Al2O3或MgO。
4.如权利要求1所述的磁性隧穿结单元，其特征在于，所述隔离层放射状地包围所述阻挡层与所述自由层。
5.如权利要求4所述的磁性隧穿结单元，其特征在于，所述隔离层放射状地包围所述阻挡层、所述自由层以及至少部分的所述保护层。
6.如权利要求1所述的磁性隧穿结单元，其特征在于，还包括所述隔离层与所述绝缘材料之间的环形层。
7.如权利要求6所述的磁性隧穿结单元，其特征在于，所述环形层包括反铁磁规则材料、其氧化物或其氮化物。
8.如权利要求6所述的磁性隧穿结单元，其特征在于，还包括紧邻所述被钉扎层的钉扎层，所述钉扎层包括反铁磁规则材料，且所述环形层包括反铁磁规则材料、其氧化物或其氮化物。
9.如权利要求1所述的磁性隧穿结单元，其特征在于，还包括与所述阻挡层相对的紧邻所述自由层的金属层。
10.如权利要求1所述的磁性隧穿结单元，其特征在于，所述保护层抑制来自所述自由层的材料的放射状迁移。
11.如权利要求10所述的磁性隧穿结单元，其特征在于，所述保护层抑制进入所述自由层或从所述自由层出来的Mn、O、B、Mg、N2与H2O材料中的任一种的放射状迁移或扩散。
12.一种磁性隧穿结单元，包括：
铁磁自由层、铁磁被钉扎层、以及它们之间的阻挡层；
放射状地至少包围所述自由层的保护层，其中所述保护层抑制进入所述自由层或从所述自由层出来的材料的放射状迁移或扩散；以及
放射状地包围所述自由层、被钉扎层、阻挡层、以及保护层的全部的绝缘材料。
13.如权利要求12所述的磁性隧穿结单元，其特征在于，所述保护层抑制进入所述自由层或从所述自由层出来的Mn、O、B、Mg、N2与H2O材料中的任一种的放射状迁移或扩散。
14.如权利要求12所述的磁性隧穿结单元，其特征在于，所述保护层包括Si3N4、SiO2、SiOxNy、AlN、MgO、Al2O3、Ta2O5、Ta、Ru、W、TiW、TaN或TiN。
15.如权利要求12所述的磁性隧穿结单元，其特征在于，还包括放射状地至少包围所述阻挡层并处于所述阻挡层与所述绝缘材料之间的电绝缘隔离层。
16.一种制造磁性隧穿结单元的方法，包括：
提供起始堆叠体，所述起始堆叠体按顺序包括铁磁被钉扎层、阻挡层、铁磁自由层、金属层、以及掩模层；
移除所述掩模层的一部分并留下图案化的掩模材料；
移除所述金属层的一部分与所述自由层的一部分并留下图案化的金属层与图案化的自由层；
形成至少包围所述自由层的放射状保护层；
移除所述阻挡层的一部分并留下图案化的阻挡层；以及
形成至少包围所述图案化的阻挡层的放射状隔离层。
17.如权利要求16所述的方法，其特征在于，形成至少包围所述图案化的阻挡层的放射状隔离层包括形成至少包围所述图案化的阻挡层与至少一部分的所述放射状保护层的放射状隔离层。
18.如权利要求16所述的方法，其特征在于，形成至少包围所述自由层的放射状保护层包括沉积至少包围所述自由层的保护层。
19.如权利要求16所述的方法，其特征在于，形成至少包围所述自由层的放射状保护层包括形成至少包围所述自由层与所述金属层的放射状保护层。
20.如权利要求16所述的方法，其特征在于，还包括：
移除所述被钉扎层的一部分并留下图案化的被钉扎层；以及
用绝缘材料包住所述图案化的被钉扎层、所述隔离层、所述保护层、所述图案化的阻挡层、所述图案化的自由层。
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