CN102157680B - 半导体器件和制造半导体器件的方法 - Google Patents

半导体器件和制造半导体器件的方法 Download PDF

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Publication number
CN102157680B
CN102157680B CN2011100485174A CN201110048517A CN102157680B CN 102157680 B CN102157680 B CN 102157680B CN 2011100485174 A CN2011100485174 A CN 2011100485174A CN 201110048517 A CN201110048517 A CN 201110048517A CN 102157680 B CN102157680 B CN 102157680B
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CN
China
Prior art keywords
tmr
insulating film
interlayer insulating
film
bottom electrode
Prior art date
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Expired - Fee Related
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CN2011100485174A
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English (en)
Chinese (zh)
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CN102157680A (zh
Inventor
古田阳雄
松田亮史
上野修一
黑岩丈晴
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN2011100485174A 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法 Expired - Fee Related CN102157680B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP328845/2005 2005-11-14
JP2005328845 2005-11-14
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法
JP276259/2006 2006-10-10

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CN102157680A CN102157680A (zh) 2011-08-17
CN102157680B true CN102157680B (zh) 2013-03-20

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CN2006101470283A Expired - Fee Related CN101162755B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法

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US (3) US7605420B2 (enExample)
JP (1) JP5072012B2 (enExample)
KR (1) KR101266656B1 (enExample)
CN (2) CN102157680B (enExample)
TW (1) TW200807775A (enExample)

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JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5107128B2 (ja) * 2008-04-23 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009295737A (ja) 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2010016031A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体記憶装置の製造方法
JP5203844B2 (ja) 2008-08-07 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
JP2012069607A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
EP3157060B1 (en) 2010-12-17 2018-03-07 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
TWI445225B (zh) * 2011-11-07 2014-07-11 Voltafield Technology Corp 磁阻元件結構形成方法
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
GB2526456B (en) * 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
WO2015147875A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Modulation of magnetic properties through implantation and associated structures
US9614143B2 (en) 2015-06-09 2017-04-04 Qualcomm Incorporated De-integrated trench formation for advanced MRAM integration
US9666790B2 (en) 2015-07-17 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
WO2017091189A1 (en) * 2015-11-23 2017-06-01 Intel Corporation Electrical contacts for magnetoresistive random access memory devices
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US12387772B2 (en) 2020-08-10 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for MRAM devices with a slot via
US12310246B2 (en) * 2022-05-31 2025-05-20 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element

Citations (1)

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US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
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JP3843827B2 (ja) 2001-12-07 2006-11-08 ヤマハ株式会社 磁気トンネル接合素子とその製法
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JP2004193282A (ja) 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置
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CN1577615A (zh) * 2003-07-25 2005-02-09 Tdk株式会社 磁存储单元以及使用了该单元的磁存储器件

Also Published As

Publication number Publication date
CN101162755B (zh) 2011-04-13
KR101266656B1 (ko) 2013-05-22
TW200807775A (en) 2008-02-01
JP5072012B2 (ja) 2012-11-14
US20110204458A1 (en) 2011-08-25
KR20070051708A (ko) 2007-05-18
CN101162755A (zh) 2008-04-16
US20070108543A1 (en) 2007-05-17
CN102157680A (zh) 2011-08-17
JP2007158301A (ja) 2007-06-21
US7605420B2 (en) 2009-10-20
US20090315128A1 (en) 2009-12-24
US7973376B2 (en) 2011-07-05

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