JP5072012B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5072012B2
JP5072012B2 JP2006276259A JP2006276259A JP5072012B2 JP 5072012 B2 JP5072012 B2 JP 5072012B2 JP 2006276259 A JP2006276259 A JP 2006276259A JP 2006276259 A JP2006276259 A JP 2006276259A JP 5072012 B2 JP5072012 B2 JP 5072012B2
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JP
Japan
Prior art keywords
tmr
film
manufacturing
lower electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006276259A
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English (en)
Japanese (ja)
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JP2007158301A5 (enExample
JP2007158301A (ja
Inventor
陽雄 古田
亮史 松田
修一 上野
丈晴 黒岩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006276259A priority Critical patent/JP5072012B2/ja
Priority to US11/593,548 priority patent/US7605420B2/en
Priority to CN2006101470283A priority patent/CN101162755B/zh
Priority to CN2011100485174A priority patent/CN102157680B/zh
Priority to KR1020060111748A priority patent/KR101266656B1/ko
Priority to TW095142141A priority patent/TW200807775A/zh
Publication of JP2007158301A publication Critical patent/JP2007158301A/ja
Priority to US12/549,695 priority patent/US7973376B2/en
Publication of JP2007158301A5 publication Critical patent/JP2007158301A5/ja
Priority to US13/099,737 priority patent/US20110204458A1/en
Application granted granted Critical
Publication of JP5072012B2 publication Critical patent/JP5072012B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2006276259A 2005-11-14 2006-10-10 半導体装置の製造方法 Expired - Fee Related JP5072012B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法
US11/593,548 US7605420B2 (en) 2005-11-14 2006-11-07 Semiconductor tunneling magneto resistance device and method of manufacturing the same
CN2011100485174A CN102157680B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法
KR1020060111748A KR101266656B1 (ko) 2005-11-14 2006-11-13 반도체 장치 및 그 제조 방법
CN2006101470283A CN101162755B (zh) 2005-11-14 2006-11-13 半导体器件和制造半导体器件的方法
TW095142141A TW200807775A (en) 2005-11-14 2006-11-14 Semiconductor device and method of manufacturing the same
US12/549,695 US7973376B2 (en) 2005-11-14 2009-08-28 Semiconductor device and method of manufacturing the same
US13/099,737 US20110204458A1 (en) 2005-11-14 2011-05-03 Semiconductor Device and Method of Manufacturing the Same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005328845 2005-11-14
JP2005328845 2005-11-14
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007158301A JP2007158301A (ja) 2007-06-21
JP2007158301A5 JP2007158301A5 (enExample) 2009-11-05
JP5072012B2 true JP5072012B2 (ja) 2012-11-14

Family

ID=38039873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006276259A Expired - Fee Related JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法

Country Status (5)

Country Link
US (3) US7605420B2 (enExample)
JP (1) JP5072012B2 (enExample)
KR (1) KR101266656B1 (enExample)
CN (2) CN102157680B (enExample)
TW (1) TW200807775A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5107128B2 (ja) * 2008-04-23 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009295737A (ja) 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2010016031A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体記憶装置の製造方法
JP5203844B2 (ja) 2008-08-07 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8455267B2 (en) * 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
JP2012069607A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
EP3157060B1 (en) 2010-12-17 2018-03-07 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
TWI445225B (zh) * 2011-11-07 2014-07-11 Voltafield Technology Corp 磁阻元件結構形成方法
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
GB2526456B (en) * 2013-03-15 2020-07-15 Intel Corp Logic chip including embedded magnetic tunnel junctions
WO2015147875A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Modulation of magnetic properties through implantation and associated structures
US9614143B2 (en) 2015-06-09 2017-04-04 Qualcomm Incorporated De-integrated trench formation for advanced MRAM integration
US9666790B2 (en) 2015-07-17 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
WO2017091189A1 (en) * 2015-11-23 2017-06-01 Intel Corporation Electrical contacts for magnetoresistive random access memory devices
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US12387772B2 (en) 2020-08-10 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for MRAM devices with a slot via
US12310246B2 (en) * 2022-05-31 2025-05-20 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element

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DE19701009A1 (de) * 1997-01-14 1998-07-16 Leonhard Feiler Verfahren zur Herstellung von Perylen-3,4-dicarbonsäureanhydriden
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP2003086773A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP3843827B2 (ja) 2001-12-07 2006-11-08 ヤマハ株式会社 磁気トンネル接合素子とその製法
JP3888168B2 (ja) 2002-01-21 2007-02-28 ヤマハ株式会社 磁気トンネル接合素子の製法
JP2003243630A (ja) 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6627932B1 (en) * 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
JP2004055918A (ja) 2002-07-22 2004-02-19 Toshiba Corp 磁気記憶装置及びその製造方法
US20040032010A1 (en) * 2002-08-14 2004-02-19 Kools Jacques Constant Stefan Amorphous soft magnetic shielding and keeper for MRAM devices
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004193282A (ja) 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置
JP2004235443A (ja) * 2003-01-30 2004-08-19 Renesas Technology Corp 薄膜磁性体記憶装置およびその製造方法
JP4618989B2 (ja) * 2003-02-18 2011-01-26 三菱電機株式会社 磁気記憶半導体装置
JP4008857B2 (ja) 2003-03-24 2007-11-14 株式会社東芝 半導体記憶装置及びその製造方法
JP3831353B2 (ja) 2003-03-27 2006-10-11 株式会社東芝 磁気ランダムアクセスメモリ
JP2004296859A (ja) 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4074281B2 (ja) * 2004-09-14 2008-04-09 株式会社東芝 磁気ランダムアクセスメモリ
JP2006261592A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
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JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN101162755B (zh) 2011-04-13
KR101266656B1 (ko) 2013-05-22
TW200807775A (en) 2008-02-01
US20110204458A1 (en) 2011-08-25
KR20070051708A (ko) 2007-05-18
CN101162755A (zh) 2008-04-16
US20070108543A1 (en) 2007-05-17
CN102157680A (zh) 2011-08-17
JP2007158301A (ja) 2007-06-21
CN102157680B (zh) 2013-03-20
US7605420B2 (en) 2009-10-20
US20090315128A1 (en) 2009-12-24
US7973376B2 (en) 2011-07-05

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