TW200807775A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TW200807775A
TW200807775A TW095142141A TW95142141A TW200807775A TW 200807775 A TW200807775 A TW 200807775A TW 095142141 A TW095142141 A TW 095142141A TW 95142141 A TW95142141 A TW 95142141A TW 200807775 A TW200807775 A TW 200807775A
Authority
TW
Taiwan
Prior art keywords
tmr
insulating film
film
lower electrode
interlayer insulating
Prior art date
Application number
TW095142141A
Other languages
English (en)
Chinese (zh)
Inventor
Haruo Furuta
Akifumi Matsuda
Shuichi Ueno
Takeharu Kuroiwa
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200807775A publication Critical patent/TW200807775A/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW095142141A 2005-11-14 2006-11-14 Semiconductor device and method of manufacturing the same TW200807775A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005328845 2005-11-14
JP2006276259A JP5072012B2 (ja) 2005-11-14 2006-10-10 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200807775A true TW200807775A (en) 2008-02-01

Family

ID=38039873

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142141A TW200807775A (en) 2005-11-14 2006-11-14 Semiconductor device and method of manufacturing the same

Country Status (5)

Country Link
US (3) US7605420B2 (enExample)
JP (1) JP5072012B2 (enExample)
KR (1) KR101266656B1 (enExample)
CN (2) CN101162755B (enExample)
TW (1) TW200807775A (enExample)

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* Cited by examiner, † Cited by third party
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JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP5107128B2 (ja) * 2008-04-23 2012-12-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009295737A (ja) 2008-06-04 2009-12-17 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2010016031A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体記憶装置の製造方法
JP5203844B2 (ja) 2008-08-07 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8455267B2 (en) 2009-05-14 2013-06-04 Qualcomm Incorporated Magnetic tunnel junction device and fabrication
JP2012069607A (ja) * 2010-09-21 2012-04-05 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US9054297B2 (en) 2010-12-17 2015-06-09 Everspin Technologies, Inc. Magnetic random access memory integration having improved scaling
TWI445225B (zh) * 2011-11-07 2014-07-11 宇能電科技股份有限公司 磁阻元件結構形成方法
US8790935B1 (en) * 2012-10-22 2014-07-29 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device with via integration
JP6177986B2 (ja) * 2013-03-15 2017-08-09 インテル・コーポレーション 埋め込まれた磁気トンネル接合を含む論理チップ
WO2015147875A1 (en) * 2014-03-28 2015-10-01 Intel Corporation Modulation of magnetic properties through implantation and associated structures
US9614143B2 (en) * 2015-06-09 2017-04-04 Qualcomm Incorporated De-integrated trench formation for advanced MRAM integration
US9666790B2 (en) * 2015-07-17 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Manufacturing techniques and corresponding devices for magnetic tunnel junction devices
EP3381064A4 (en) * 2015-11-23 2019-08-21 Intel Corporation ELECTRICAL CONTACTS FOR MAGNETORESISTIVE DIRECT ACCESS MEMORY DEVICES
US9771261B1 (en) * 2016-03-17 2017-09-26 Texas Instruments Incorporated Selective patterning of an integrated fluxgate device
US12387772B2 (en) 2020-08-10 2025-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for MRAM devices with a slot via
US12310246B2 (en) * 2022-05-31 2025-05-20 Allegro Microsystems, Llc Fabricating an electroconductive contact on a top surface of a tunneling magnetoresistance element

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US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
JP2003086773A (ja) 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置およびその製造方法
JP3843827B2 (ja) 2001-12-07 2006-11-08 ヤマハ株式会社 磁気トンネル接合素子とその製法
JP3888168B2 (ja) 2002-01-21 2007-02-28 ヤマハ株式会社 磁気トンネル接合素子の製法
JP2003243630A (ja) 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
US6627932B1 (en) * 2002-04-11 2003-09-30 Micron Technology, Inc. Magnetoresistive memory device
JP2004055918A (ja) 2002-07-22 2004-02-19 Toshiba Corp 磁気記憶装置及びその製造方法
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JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004193282A (ja) 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置
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JP2004296859A (ja) 2003-03-27 2004-10-21 Renesas Technology Corp 磁気記録素子及び磁気記録素子の製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4074281B2 (ja) * 2004-09-14 2008-04-09 株式会社東芝 磁気ランダムアクセスメモリ
JP2006261592A (ja) * 2005-03-18 2006-09-28 Fujitsu Ltd 磁気抵抗効果素子及びその製造方法
US7122386B1 (en) * 2005-09-21 2006-10-17 Magic Technologies, Inc. Method of fabricating contact pad for magnetic random access memory
JP5072012B2 (ja) * 2005-11-14 2012-11-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN102157680B (zh) 2013-03-20
US7605420B2 (en) 2009-10-20
US20110204458A1 (en) 2011-08-25
US20070108543A1 (en) 2007-05-17
US7973376B2 (en) 2011-07-05
KR20070051708A (ko) 2007-05-18
CN102157680A (zh) 2011-08-17
JP2007158301A (ja) 2007-06-21
CN101162755B (zh) 2011-04-13
US20090315128A1 (en) 2009-12-24
CN101162755A (zh) 2008-04-16
KR101266656B1 (ko) 2013-05-22
JP5072012B2 (ja) 2012-11-14

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