CN102036020B - 固态图像传感器和摄像装置 - Google Patents

固态图像传感器和摄像装置 Download PDF

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Publication number
CN102036020B
CN102036020B CN2010102928562A CN201010292856A CN102036020B CN 102036020 B CN102036020 B CN 102036020B CN 2010102928562 A CN2010102928562 A CN 2010102928562A CN 201010292856 A CN201010292856 A CN 201010292856A CN 102036020 B CN102036020 B CN 102036020B
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pixel
sense wire
group
column
pixels
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Chinese (zh)
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CN102036020A (zh
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河野祥士
竹田伸弘
山下雄一郎
松田崇
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
CN2010102928562A 2009-10-06 2010-09-27 固态图像传感器和摄像装置 Expired - Fee Related CN102036020B (zh)

Applications Claiming Priority (2)

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JP2009-232866 2009-10-06
JP2009232866A JP4881987B2 (ja) 2009-10-06 2009-10-06 固体撮像装置および撮像装置

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CN102036020A CN102036020A (zh) 2011-04-27
CN102036020B true CN102036020B (zh) 2013-03-13

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US (1) US8582009B2 (enExample)
EP (1) EP2315435B1 (enExample)
JP (1) JP4881987B2 (enExample)
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9277144B2 (en) 2014-03-12 2016-03-01 Apple Inc. System and method for estimating an ambient light condition using an image sensor and field-of-view compensation
US9293500B2 (en) 2013-03-01 2016-03-22 Apple Inc. Exposure control for image sensors
US9319611B2 (en) 2013-03-14 2016-04-19 Apple Inc. Image sensor with flexible pixel summing
US9473706B2 (en) 2013-12-09 2016-10-18 Apple Inc. Image sensor flicker detection
US9538106B2 (en) 2014-04-25 2017-01-03 Apple Inc. Image sensor having a uniform digital power signature
US9549099B2 (en) 2013-03-12 2017-01-17 Apple Inc. Hybrid image sensor
US9584743B1 (en) 2014-03-13 2017-02-28 Apple Inc. Image sensor with auto-focus and pixel cross-talk compensation
US9596423B1 (en) 2013-11-21 2017-03-14 Apple Inc. Charge summing in an image sensor
US9596420B2 (en) 2013-12-05 2017-03-14 Apple Inc. Image sensor having pixels with different integration periods

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5374110B2 (ja) * 2008-10-22 2013-12-25 キヤノン株式会社 撮像センサ及び撮像装置
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP5290923B2 (ja) 2009-10-06 2013-09-18 キヤノン株式会社 固体撮像装置および撮像装置
JP5679653B2 (ja) * 2009-12-09 2015-03-04 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5780711B2 (ja) 2010-04-06 2015-09-16 キヤノン株式会社 固体撮像装置
JP5656484B2 (ja) 2010-07-07 2015-01-21 キヤノン株式会社 固体撮像装置および撮像システム
JP5697371B2 (ja) 2010-07-07 2015-04-08 キヤノン株式会社 固体撮像装置および撮像システム
JP5885401B2 (ja) 2010-07-07 2016-03-15 キヤノン株式会社 固体撮像装置および撮像システム
JP5645513B2 (ja) 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP5643555B2 (ja) 2010-07-07 2014-12-17 キヤノン株式会社 固体撮像装置及び撮像システム
JP5751766B2 (ja) 2010-07-07 2015-07-22 キヤノン株式会社 固体撮像装置および撮像システム
JP5581982B2 (ja) * 2010-11-10 2014-09-03 株式会社ニコン 撮像装置
JP5737971B2 (ja) 2011-01-28 2015-06-17 キヤノン株式会社 固体撮像装置およびカメラ
JP5744545B2 (ja) 2011-01-31 2015-07-08 キヤノン株式会社 固体撮像装置およびカメラ
JP5885403B2 (ja) * 2011-06-08 2016-03-15 キヤノン株式会社 撮像装置
JP5821315B2 (ja) 2011-06-21 2015-11-24 ソニー株式会社 電子機器、電子機器の駆動方法
JP6039165B2 (ja) 2011-08-11 2016-12-07 キヤノン株式会社 撮像素子及び撮像装置
JP5864990B2 (ja) 2011-10-03 2016-02-17 キヤノン株式会社 固体撮像装置およびカメラ
EP2800355B1 (en) 2011-12-27 2017-12-20 Fujifilm Corporation Imaging device, method for controlling imaging device, and control program
JP2013143729A (ja) * 2012-01-12 2013-07-22 Sony Corp 撮像素子、撮像装置、電子機器および撮像方法
JP6053505B2 (ja) * 2012-01-18 2016-12-27 キヤノン株式会社 固体撮像装置
JP6023437B2 (ja) 2012-02-29 2016-11-09 キヤノン株式会社 固体撮像装置及びカメラ
US9093351B2 (en) 2012-03-21 2015-07-28 Canon Kabushiki Kaisha Solid-state imaging apparatus
US9276031B2 (en) 2013-03-04 2016-03-01 Apple Inc. Photodiode with different electric potential regions for image sensors
US9741754B2 (en) 2013-03-06 2017-08-22 Apple Inc. Charge transfer circuit with storage nodes in image sensors
JP6180882B2 (ja) * 2013-10-31 2017-08-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、信号処理装置、および電子機器
KR102170627B1 (ko) 2014-01-08 2020-10-27 삼성전자주식회사 이미지 센서
US10285626B1 (en) 2014-02-14 2019-05-14 Apple Inc. Activity identification using an optical heart rate monitor
JP6305169B2 (ja) * 2014-04-07 2018-04-04 キヤノン株式会社 固体撮像素子、撮像装置及びその制御方法、プログラム、記憶媒体
US9686485B2 (en) 2014-05-30 2017-06-20 Apple Inc. Pixel binning in an image sensor
JP2016012905A (ja) * 2014-06-02 2016-01-21 ソニー株式会社 撮像素子、撮像方法、および電子機器
JP6755799B2 (ja) * 2014-08-29 2020-09-16 パナソニックセミコンダクターソリューションズ株式会社 撮像装置、及びそれに用いられる固体撮像装置
TWI701819B (zh) 2015-06-09 2020-08-11 日商索尼半導體解決方案公司 攝像元件、驅動方法及電子機器
US10341592B2 (en) 2015-06-09 2019-07-02 Sony Semiconductor Solutions Corporation Imaging element, driving method, and electronic device
JP2017022624A (ja) * 2015-07-13 2017-01-26 キヤノン株式会社 撮像素子及びその駆動方法、及び撮像装置
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US9912883B1 (en) 2016-05-10 2018-03-06 Apple Inc. Image sensor with calibrated column analog-to-digital converters
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JP6779038B2 (ja) 2016-06-01 2020-11-04 キヤノン株式会社 撮像素子及びその制御方法、撮像装置及びその制御方法
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JP6818875B2 (ja) 2016-09-23 2021-01-20 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 積層背面照射型ｓｐａｄアレイ
CN110192281B (zh) * 2016-10-14 2022-06-14 华为技术有限公司 Cmos图像传感器
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US10652531B2 (en) 2017-01-25 2020-05-12 Canon Kabushiki Kaisha Solid-state imaging device, imaging system, and movable object
WO2018140522A2 (en) 2017-01-25 2018-08-02 Apple Inc. Spad detector having modulated sensitivity
US10656251B1 (en) 2017-01-25 2020-05-19 Apple Inc. Signal acquisition in a SPAD detector
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CN108666327B (zh) * 2017-03-28 2020-06-26 奕瑞影像科技（太仓）有限公司 X射线图像传感器及其制作方法、平板探测器
US10622538B2 (en) 2017-07-18 2020-04-14 Apple Inc. Techniques for providing a haptic output and sensing a haptic input using a piezoelectric body
US10440301B2 (en) 2017-09-08 2019-10-08 Apple Inc. Image capture device, pixel, and method providing improved phase detection auto-focus performance
WO2019066056A1 (ja) * 2017-09-29 2019-04-04 株式会社ニコン 撮像素子および撮像装置
JP7067912B2 (ja) * 2017-12-13 2022-05-16 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP7091080B2 (ja) 2018-02-05 2022-06-27 キヤノン株式会社 装置、システム、および移動体
US10848693B2 (en) 2018-07-18 2020-11-24 Apple Inc. Image flare detection using asymmetric pixels
US11019294B2 (en) 2018-07-18 2021-05-25 Apple Inc. Seamless readout mode transitions in image sensors
KR102891047B1 (ko) * 2019-10-22 2025-11-25 에스케이하이닉스 주식회사 복수의 촬영 모드를 지원하는 이미지 센서
WO2021251009A1 (ja) * 2020-06-09 2021-12-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
US11563910B2 (en) 2020-08-04 2023-01-24 Apple Inc. Image capture devices having phase detection auto-focus pixels
US11546532B1 (en) 2021-03-16 2023-01-03 Apple Inc. Dynamic correlated double sampling for noise rejection in image sensors
US12192644B2 (en) 2021-07-29 2025-01-07 Apple Inc. Pulse-width modulation pixel sensor
CN117751576A (zh) * 2021-08-10 2024-03-22 华为技术有限公司 无去马赛克的像素阵列、图像传感器、电子设备及其操作方法
US12069384B2 (en) 2021-09-23 2024-08-20 Apple Inc. Image capture devices having phase detection auto-focus pixels
KR20240127747A (ko) * 2023-02-16 2024-08-23 삼성전자주식회사 이미지 센싱 장치 및 오토모티브 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307366A (zh) * 2000-01-29 2001-08-08 全视技术有限公司 单片彩色金属氧化物半导体图像传感器及相邻行读出方法
US6992714B1 (en) * 1999-05-31 2006-01-31 Canon Kabushiki Kaisha Image pickup apparatus having plural pixels arranged two-dimensionally, and selective addition of different pixel color signals to control spatial color arrangement
CN101160955A (zh) * 2005-04-14 2008-04-09 美光科技公司 列并行图像传感器的列偏移值的产生及存储

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237185A (en) * 1991-04-19 1993-08-17 Canon Kabushiki Kaisha Image pickup apparatus with different gate thicknesses
JP3636291B2 (ja) * 2000-01-31 2005-04-06 オリンパス株式会社 撮像装置
US20050128327A1 (en) * 2003-12-10 2005-06-16 Bencuya Selim S. Device and method for image sensing
KR100871688B1 (ko) 2004-02-27 2008-12-08 삼성전자주식회사 고체 촬상 장치 및 그 구동 방법
US7633539B2 (en) * 2004-06-07 2009-12-15 Canon Kabushiki Kaisha Image pickup device with analog-to-digital converter
KR20070034063A (ko) * 2004-07-20 2007-03-27 후지쯔 가부시끼가이샤 Ｃｍｏｓ 촬상 소자
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
US7548261B2 (en) * 2004-11-30 2009-06-16 Digital Imaging Systems Gmbh Column averaging/row averaging circuit for image sensor resolution adjustment in high intensity light environment
JP2006180146A (ja) * 2004-12-22 2006-07-06 Nec Corp Ｃｄｍａ受信装置及びそれに用いるパスサーチ方法
US7830437B2 (en) * 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7705900B2 (en) * 2005-06-01 2010-04-27 Eastman Kodak Company CMOS image sensor pixel with selectable binning and conversion gain
JP4827627B2 (ja) * 2006-06-16 2011-11-30 キヤノン株式会社 撮像装置及びその処理方法
JP4956084B2 (ja) * 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP4194633B2 (ja) * 2006-08-08 2008-12-10 キヤノン株式会社 撮像装置及び撮像システム
KR100828943B1 (ko) 2006-12-19 2008-05-13 (주)실리콘화일 3t-4s 스텝 ＆ 리피트 단위 셀 및 상기 단위 셀을 구비한 이미지센서, 데이터 저장 장치, 반도체 공정 마스크, 반도체 웨이퍼
JP4966035B2 (ja) * 2007-01-26 2012-07-04 株式会社東芝 固体撮像装置
US8289430B2 (en) * 2007-02-09 2012-10-16 Gentex Corporation High dynamic range imaging device
US8115841B2 (en) * 2007-03-13 2012-02-14 Micron Technology, Inc. Method, apparatus and system providing an image sensor having pixels with multiple exposures, diodes and gain readouts
JP5022758B2 (ja) * 2007-04-12 2012-09-12 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
US8208054B2 (en) * 2007-04-18 2012-06-26 Rosnes Corporation Solid-state imaging device
JP5053737B2 (ja) * 2007-07-06 2012-10-17 キヤノン株式会社 光電変換装置
JP5164509B2 (ja) * 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
JP5106092B2 (ja) * 2007-12-26 2012-12-26 パナソニック株式会社 固体撮像装置およびカメラ
JP5221982B2 (ja) * 2008-02-29 2013-06-26 キヤノン株式会社 固体撮像装置及びカメラ
JP5213501B2 (ja) * 2008-04-09 2013-06-19 キヤノン株式会社 固体撮像装置
JP2009278241A (ja) * 2008-05-13 2009-11-26 Canon Inc 固体撮像装置の駆動方法および固体撮像装置
JP2009303088A (ja) * 2008-06-17 2009-12-24 Panasonic Corp 固体撮像装置、その駆動方法及びカメラ
JP2010010896A (ja) * 2008-06-25 2010-01-14 Panasonic Corp 固体撮像装置
JP5253028B2 (ja) * 2008-07-23 2013-07-31 キヤノン株式会社 撮像システムおよびその制御方法
JP5371330B2 (ja) * 2008-08-29 2013-12-18 キヤノン株式会社 固体撮像装置
JP4617372B2 (ja) * 2008-08-29 2011-01-26 キヤノン株式会社 撮像装置及び撮像システム
JP5258551B2 (ja) * 2008-12-26 2013-08-07 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5558857B2 (ja) * 2009-03-09 2014-07-23 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5476832B2 (ja) * 2009-07-23 2014-04-23 ソニー株式会社 固体撮像装置及びカメラ
JP5631050B2 (ja) * 2010-05-10 2014-11-26 キヤノン株式会社 固体撮像装置およびカメラ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992714B1 (en) * 1999-05-31 2006-01-31 Canon Kabushiki Kaisha Image pickup apparatus having plural pixels arranged two-dimensionally, and selective addition of different pixel color signals to control spatial color arrangement
CN1307366A (zh) * 2000-01-29 2001-08-08 全视技术有限公司 单片彩色金属氧化物半导体图像传感器及相邻行读出方法
CN101160955A (zh) * 2005-04-14 2008-04-09 美光科技公司 列并行图像传感器的列偏移值的产生及存储

Cited By (9)

* Cited by examiner, † Cited by third party
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US9319611B2 (en) 2013-03-14 2016-04-19 Apple Inc. Image sensor with flexible pixel summing
US9596423B1 (en) 2013-11-21 2017-03-14 Apple Inc. Charge summing in an image sensor
US9596420B2 (en) 2013-12-05 2017-03-14 Apple Inc. Image sensor having pixels with different integration periods
US9473706B2 (en) 2013-12-09 2016-10-18 Apple Inc. Image sensor flicker detection
US9277144B2 (en) 2014-03-12 2016-03-01 Apple Inc. System and method for estimating an ambient light condition using an image sensor and field-of-view compensation
US9584743B1 (en) 2014-03-13 2017-02-28 Apple Inc. Image sensor with auto-focus and pixel cross-talk compensation
US9538106B2 (en) 2014-04-25 2017-01-03 Apple Inc. Image sensor having a uniform digital power signature

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CN102036020A (zh) 2011-04-27
US8582009B2 (en) 2013-11-12
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