CN101981700B - 用于碳化硅器件的双保护环边缘终端和制造具有双保护环边缘终端的碳化硅器件的方法 - Google Patents

用于碳化硅器件的双保护环边缘终端和制造具有双保护环边缘终端的碳化硅器件的方法 Download PDF

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CN101981700B
CN101981700B CN200980111322.0A CN200980111322A CN101981700B CN 101981700 B CN101981700 B CN 101981700B CN 200980111322 A CN200980111322 A CN 200980111322A CN 101981700 B CN101981700 B CN 101981700B
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silicon carbide
guard ring
doped portion
floating guard
edge termination
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CN101981700A (zh
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张清纯
C·乔纳斯
A·K·阿加瓦尔
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Wofu Semiconductor Co ltd
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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CN200980111322.0A 2008-02-26 2009-02-05 用于碳化硅器件的双保护环边缘终端和制造具有双保护环边缘终端的碳化硅器件的方法 Active CN101981700B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/037,211 2008-02-26
US12/037,211 US9640609B2 (en) 2008-02-26 2008-02-26 Double guard ring edge termination for silicon carbide devices
PCT/US2009/000734 WO2009108268A1 (en) 2008-02-26 2009-02-05 Double guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

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CN101981700A CN101981700A (zh) 2011-02-23
CN101981700B true CN101981700B (zh) 2014-05-14

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US (1) US9640609B2 (https=)
EP (1) EP2248176B1 (https=)
JP (1) JP5324603B2 (https=)
KR (1) KR101595587B1 (https=)
CN (1) CN101981700B (https=)
WO (1) WO2009108268A1 (https=)

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WO2009108268A1 (en) 2009-09-03
EP2248176B1 (en) 2014-04-23
KR20100128303A (ko) 2010-12-07
US9640609B2 (en) 2017-05-02
JP2011514674A (ja) 2011-05-06
US20090212301A1 (en) 2009-08-27
EP2248176A1 (en) 2010-11-10
JP5324603B2 (ja) 2013-10-23
CN101981700A (zh) 2011-02-23
KR101595587B1 (ko) 2016-02-18

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