KR101595587B1 - 실리콘 카바이드 디바이스를 위한 이중 가드 링 에지 종단 및 이를 포함하는 실리콘 카바이드 디바이스를 제조하는 방법 - Google Patents

실리콘 카바이드 디바이스를 위한 이중 가드 링 에지 종단 및 이를 포함하는 실리콘 카바이드 디바이스를 제조하는 방법 Download PDF

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KR101595587B1
KR101595587B1 KR1020107021354A KR20107021354A KR101595587B1 KR 101595587 B1 KR101595587 B1 KR 101595587B1 KR 1020107021354 A KR1020107021354 A KR 1020107021354A KR 20107021354 A KR20107021354 A KR 20107021354A KR 101595587 B1 KR101595587 B1 KR 101595587B1
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guard rings
silicon carbide
floating guard
lightly doped
doped portion
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KR20100128303A (ko
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칭춘 장
샬로트 조나스
아난트 케이. 아가왈
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크리, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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KR1020107021354A 2008-02-26 2009-02-05 실리콘 카바이드 디바이스를 위한 이중 가드 링 에지 종단 및 이를 포함하는 실리콘 카바이드 디바이스를 제조하는 방법 Active KR101595587B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/037,211 2008-02-26
US12/037,211 US9640609B2 (en) 2008-02-26 2008-02-26 Double guard ring edge termination for silicon carbide devices

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KR20100128303A KR20100128303A (ko) 2010-12-07
KR101595587B1 true KR101595587B1 (ko) 2016-02-18

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US (1) US9640609B2 (https=)
EP (1) EP2248176B1 (https=)
JP (1) JP5324603B2 (https=)
KR (1) KR101595587B1 (https=)
CN (1) CN101981700B (https=)
WO (1) WO2009108268A1 (https=)

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WO2009108268A1 (en) 2009-09-03
EP2248176B1 (en) 2014-04-23
KR20100128303A (ko) 2010-12-07
US9640609B2 (en) 2017-05-02
CN101981700B (zh) 2014-05-14
JP2011514674A (ja) 2011-05-06
US20090212301A1 (en) 2009-08-27
EP2248176A1 (en) 2010-11-10
JP5324603B2 (ja) 2013-10-23
CN101981700A (zh) 2011-02-23

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