CN101894842A - 场效应晶体管反相器以及制造方法 - Google Patents
场效应晶体管反相器以及制造方法 Download PDFInfo
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- CN101894842A CN101894842A CN2010101746302A CN201010174630A CN101894842A CN 101894842 A CN101894842 A CN 101894842A CN 2010101746302 A CN2010101746302 A CN 2010101746302A CN 201010174630 A CN201010174630 A CN 201010174630A CN 101894842 A CN101894842 A CN 101894842A
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- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/470,128 US8084308B2 (en) | 2009-05-21 | 2009-05-21 | Single gate inverter nanowire mesh |
US12/470,128 | 2009-05-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101894842A true CN101894842A (zh) | 2010-11-24 |
CN101894842B CN101894842B (zh) | 2012-09-12 |
Family
ID=43103984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101746302A Active CN101894842B (zh) | 2009-05-21 | 2010-05-06 | 场效应晶体管反相器以及制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8084308B2 (zh) |
JP (1) | JP5607420B2 (zh) |
KR (1) | KR101081066B1 (zh) |
CN (1) | CN101894842B (zh) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610529A (zh) * | 2012-03-31 | 2012-07-25 | 上海华力微电子有限公司 | 基于体硅的三维阵列式后栅型SiNWFET制备方法 |
CN102623321A (zh) * | 2012-03-31 | 2012-08-01 | 上海华力微电子有限公司 | 基于体硅的纵向堆叠式后栅型SiNWFET制备方法 |
CN102623347A (zh) * | 2012-03-31 | 2012-08-01 | 上海华力微电子有限公司 | 基于体硅的三维阵列式SiNWFET制备方法 |
CN102683294A (zh) * | 2012-05-03 | 2012-09-19 | 上海华力微电子有限公司 | 制备SOI上双层隔离混合晶向后栅型反型模式SiNWFET的方法 |
CN102683283A (zh) * | 2012-05-03 | 2012-09-19 | 上海华力微电子有限公司 | 一种双层隔离混合晶向应变硅纳米线cmos制备方法 |
CN103258738A (zh) * | 2012-02-20 | 2013-08-21 | 中芯国际集成电路制造(上海)有限公司 | 超晶格纳米线场效应晶体管及其形成方法 |
CN103295878A (zh) * | 2012-02-27 | 2013-09-11 | 中芯国际集成电路制造(上海)有限公司 | 一种多层纳米线结构的制造方法 |
CN103426764A (zh) * | 2012-05-24 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN103700660A (zh) * | 2013-12-11 | 2014-04-02 | 中国科学院上海微系统与信息技术研究所 | 一种全环栅cmos场效应晶体管和制备方法 |
CN103972235A (zh) * | 2013-01-28 | 2014-08-06 | 国际商业机器公司 | 电子器件及其形成方法 |
CN103985751A (zh) * | 2013-02-08 | 2014-08-13 | 中国科学院微电子研究所 | 半导体设置及其制造方法 |
CN104011849A (zh) * | 2011-12-23 | 2014-08-27 | 英特尔公司 | Cmos纳米线结构 |
CN104115273A (zh) * | 2011-12-19 | 2014-10-22 | 英特尔公司 | 高电压场效应晶体管 |
CN104137237A (zh) * | 2011-12-23 | 2014-11-05 | 英特尔公司 | 具有非分立的源极区和漏极区的纳米线结构 |
CN104347630A (zh) * | 2013-08-01 | 2015-02-11 | 台湾积体电路制造股份有限公司 | 半导体器件及其制造方法 |
CN104701376A (zh) * | 2013-12-10 | 2015-06-10 | 台湾积体电路制造股份有限公司 | 替换栅极纳米线器件 |
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JP5607420B2 (ja) | 2014-10-15 |
KR101081066B1 (ko) | 2011-11-07 |
JP2010272859A (ja) | 2010-12-02 |
US20120138888A1 (en) | 2012-06-07 |
KR20100126188A (ko) | 2010-12-01 |
US8466451B2 (en) | 2013-06-18 |
US20100295021A1 (en) | 2010-11-25 |
CN101894842B (zh) | 2012-09-12 |
US8084308B2 (en) | 2011-12-27 |
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