CN101842910B - 用于制造光电转换器件的方法 - Google Patents

用于制造光电转换器件的方法 Download PDF

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Publication number
CN101842910B
CN101842910B CN2008801145513A CN200880114551A CN101842910B CN 101842910 B CN101842910 B CN 101842910B CN 2008801145513 A CN2008801145513 A CN 2008801145513A CN 200880114551 A CN200880114551 A CN 200880114551A CN 101842910 B CN101842910 B CN 101842910B
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China
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semiconductor layer
crystal semiconductor
single crystal
manufacture
electrode
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Expired - Fee Related
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CN2008801145513A
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Chinese (zh)
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CN101842910A (zh
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山崎舜平
荒井康行
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
CN2008801145513A 2007-11-01 2008-10-23 用于制造光电转换器件的方法 Expired - Fee Related CN101842910B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007285252 2007-11-01
JP2007-285252 2007-11-01
JP2007285253 2007-11-01
JP2007-285253 2007-11-01
PCT/JP2008/069708 WO2009057669A1 (en) 2007-11-01 2008-10-23 Method for manufacturing photoelectric conversion device

Publications (2)

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CN101842910A CN101842910A (zh) 2010-09-22
CN101842910B true CN101842910B (zh) 2013-03-27

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US (1) US7964429B2 (enExample)
JP (1) JP2009135464A (enExample)
CN (1) CN101842910B (enExample)
WO (1) WO2009057669A1 (enExample)

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US7943414B2 (en) * 2008-08-01 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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US8178422B2 (en) * 2009-03-31 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of measurement in semiconductor fabrication
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US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
KR101077504B1 (ko) 2010-08-17 2011-10-28 엘지전자 주식회사 태양전지 모듈
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KR101699312B1 (ko) * 2011-01-28 2017-01-24 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
USD711817S1 (en) * 2011-10-12 2014-08-26 Azur Space Solar Power Gmbh Solar panel
KR101832230B1 (ko) * 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
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JP6397273B2 (ja) * 2013-10-21 2018-09-26 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ シリコン太陽電池のモジュールレベル処理
JP5541409B2 (ja) * 2013-11-27 2014-07-09 信越化学工業株式会社 太陽電池の製造方法
US10971329B2 (en) * 2016-02-05 2021-04-06 Hitachi High-Tech Corporation Field ionization source, ion beam apparatus, and beam irradiation method
JP6909618B2 (ja) 2017-04-19 2021-07-28 株式会社日立ハイテクサイエンス イオンビーム装置
US11742437B2 (en) * 2020-03-27 2023-08-29 Stmicroelectronics Ltd WLCSP with transparent substrate and method of manufacturing the same
CN215644456U (zh) * 2020-03-27 2022-01-25 意法半导体有限公司 半导体器件
CN111463301A (zh) * 2020-05-19 2020-07-28 东方日升新能源股份有限公司 一种硅片/电池片、光伏电池组件及载具、设计排布方法
CN113921639A (zh) * 2020-10-12 2022-01-11 上海晶澳太阳能科技有限公司 硅片及制备方法、电池片、电池切片、电池串及光伏组件

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Publication number Publication date
JP2009135464A (ja) 2009-06-18
WO2009057669A1 (en) 2009-05-07
CN101842910A (zh) 2010-09-22
US7964429B2 (en) 2011-06-21
US20090117680A1 (en) 2009-05-07

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