CN101834120A - 喷淋头和等离子体处理装置 - Google Patents
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Abstract
本发明提供一种喷淋头和等离子体处理装置，其能够抑制喷淋头的温度升高，并且能够使喷淋头的温度分布均匀，实现处理均匀性的提高。本发明的喷淋头以与用于载置基板的载置台相对的方式设置于在内部处理基板的腔室内，用于从设置在与所述载置台相对的相对面上的多个气体喷出孔向所述基板以喷淋状供给气体，在与相对面相反侧的面上立设有多个构成为棒状的热传导柱。
Description
技术领域
本发明涉及一种设置于在内部处理基板的处理腔室中的、用于向基板以喷淋状供给气体的喷淋头和等离子体处理装置。
背景技术
近来，在半导体装置的制造领域中，使用了用于向半导体晶片等基板以喷淋状供给气体的喷淋头。即，在对例如半导体晶片等基板实施等离子体蚀刻处理的等离子体处理装置中，在处理腔室内设置有用于载置基板的载置台，以与该载置台相对的方式设置有喷淋头。在该喷淋头的与载置台相对的相对面上设置有多个气体喷出孔，从这些气体喷出孔向基板以喷淋状供给气体。
此外，在上述等离子体处理装置中，因为在处理腔室内产生等离子体，所以喷淋头的温度升高。由此，以设置风扇等空气冷却喷淋头的部分的方式构成的等离子体处理装置已众所周知。(例如，参照专利文献1)。此外，在喷淋头部分，以使温度调节介质循环进行冷却的方式构成的等离子体处理装置也已众所周知(例如，参照专利文献2)。
专利文献1：日本特开2003-68710号公报
专利文献2：日本特开2006-352040号公报
上述的利用空气冷却或者使温度调节介质循环对喷淋头进行冷却的等离子体处理装置构成为从处理腔室的下部对处理腔室内进行排气。另一方面，本发明的发明人根据现有技术开发了一种能够从喷淋头供给气体的同时，从设置在该喷淋头上的多个排气孔进行排气，实现均匀气体流的喷淋头。在这种喷淋头中，如果设置用于使冷却介质循环来进行冷却的机构等，则排气孔的路径变长，存在排气性能恶化这样的问题。此外，因为需要在喷淋头的上方设置构成排气路径的筒状体(排气管)，因此，存在难以设置用于直接冷却喷淋头的空气冷却机构等这样的问题。由此，存在喷淋头的温度升高，并且喷淋头的温度分布不均匀，使处理均匀性恶化这样的问题。
发明内容
本发明针对上述现有的状况，提供一种能够抑制喷淋头的温度升高，并且能够使喷淋头的温度分布均匀，提高处理的均匀性的喷淋头和等离子体处理装置。
本发明第一方面的喷淋头，以与用于载置基板的载置台相对的方式设置于在内部处理上述基板的处理腔室中，用于从设置在与上述载置台相对的相对面上的多个喷出孔向上述基板以喷淋状供给气体，其特征在于：在与上述相对面相反侧的面上设置有多个构成为棒状的热传导柱。
本发明第二方面的喷淋头的特征在于：在本发明第一方面记载的喷淋头中，能够改变上述热传导柱的长度和/或粗细来调整热容量。
本发明第三方面的喷淋头的特征在于：在本发明第一或第二方面记载的喷淋头中，上述热传导柱由铝、不锈钢和铜中的任一种构成。
本发明第四方面的喷淋头的特征在于：在本发明第一到第三任一方面记载的喷淋头中，该喷淋头包括多个贯通上述相对面和上述相反侧的面之间设置的、用于从上述相对面向上述相反侧的面进行排气的排气孔，上述热传导柱被设置在排气路径中。
本发明第五方面的喷淋头的特征在于：在本发明第四方面记载的喷淋头中，上述热传导柱通过热传递部件与构成上述排气路径的筒状体的侧壁部连接。
本发明第六方面的喷淋头的特征在于：在本发明第五方面记载的喷淋头中，上述热传导柱构成为在常温下与上述热传递部件呈非接触状态，在热膨胀时与上述热传递部件接触。
本发明第七方面的喷淋头的特征在于，在本发明第四至第六任一方面记载的喷淋头中，在上述筒状体的侧壁部设置有温度调节单元。
本发明第八方面的等离子体处理装置其具有喷淋头，该喷淋头以与用于载置基板的载置台相对的方式设置于在内部处理上述基板的处理腔室内，用于从设置在与上述载置台相对的相对面上的多个喷出孔向基板以喷淋状供给气体，该等离子体处理装置的特征在于：在上述喷淋头的与上述相对面相反侧的面上立设有多个构成为棒状的热传导柱。
本发明第九方面的等离子体处理装置的特征在于：在本发明第八方面记载的等离子体处理装置中，上述喷淋头具有多个贯通上述相对面和上述相反侧的面之间设置的、用于从上述相对面向上述反侧的面进行排气的排气孔，上述热传导柱被设置在排气路径中。
本发明第十方面的等离子体处理装置的特征在于：在本发明第八或第九方面记载的等离子体处理装置中，上述喷淋头形成为与上述载置台相对的相对电极。
根据本发明，能够提供一种能够抑制喷淋头的温度的升高，并且能够使喷淋头的温度分布均匀，且能够提高处理均匀性的喷淋头和等离子体处理装置。
附图的简要说明
图1是表示涉及本发明的一种实施方式的等离子体处理装置的构成的纵截面图。
图2是表示涉及本发明的一种实施方式的喷淋头的构成的纵截面图。
图3是涉及本发明的一种实施方式的喷淋头的立体图。
图4是涉及本发明的一种实施方式的喷淋头的俯视图。
图5是涉及本发明的一种实施方式的喷淋头的仰视图。
图6是表示涉及本发明的另一实施方式的等离子体处理装置的构成的纵截面图。
图7是图6的等离子体处理装置的主要部分构成的放大图。
符号说明：
11气体喷出孔 13排气孔 16热传导柱
100喷淋头 200等离子体处理装置
201处理腔室 202载置台
具体实施方式
下面，参照附图对本发明的实施方式进行详细说明。
图1表示涉及本发明等离子体处理装置的一种实施方式的等离子体蚀刻装置200的主要部分截面的构成，图2是表示图1的等离子体蚀刻装置200中设置的喷淋头100的构成的截面图，图3是表示喷淋头100的构成的立体图，图4是喷淋头100的俯视图，图5是喷淋头100的仰视图。
如图2所示，喷淋头100由使下侧部件1和配置在该下侧部件的上侧的上侧部件2的两层板状部件层叠的层叠体10构成。该板状部件由例如对表面实施了阳极氧化处理的铝等构成。如图1所示，该喷淋头100以与载置半导体晶片(基板)的载置台202相对的方式设置在等离子体蚀刻装置200的处理腔室201内。即，图2所示的下侧部件1侧被配设为形成与图1所示的载置台202相对的相对面14。
在上述层叠体10中，在形成与载置台202相对的相对面14的下侧部件1上，形成有多个气体喷出孔11，在下侧部件1和上侧部件2之间，形成有连通这些气体喷出孔11的气体流路12。如图2中的箭头所示，这些气体喷出孔11用于以喷淋状向基板(图2中的下侧)供给气体。此外，在层叠体10的周缘部，设置有用于向气体流路12内导入气体的气体导入部12a。
此外，在上述层叠体10上，形成有贯通该层叠体10即下侧部件1和上侧部件2的多个排气孔13。该排气孔13构成排气机构，在图2中如虚线箭头所示，该排气机构以从基板侧(图中的下侧)向与基板相反侧(图中的上侧)形成气体流的方式进行排气。该排气孔13的直径为例如3mm左右，如图3所示，其被大致均匀地设置在除喷淋头100的周缘部(为用于固定在处理腔室201中的固定部)以外的整个区域内。对于排气孔13的数量，例如在处理直径为10英寸的半导体晶片的喷淋头100的情形中，为700～1000个左右。此外，如图3所示，在本实施方式中，喷淋头100的外形对照作为被处理基板的半导体晶片的外形构成为圆板状。
此外，在上述层叠体10的上侧部件2侧，即与载置台202相对的相对面14相反侧的面15上，立设有多个构成为棒状的热传导柱16。如图3所示，该热传导柱16大致均匀地被设置在除喷淋头100的周缘部(为用于固定在处理腔室201中的固定部)外的整个区域内。此外，该热传导柱16由热传导性能良好的材料例如铜、不锈钢、铝等构成。对于铝、铜而言，其包括了添加少量其它元素而改善机械性能和热传导性能的这类金属的合金。此外，在使用铜作为热传导柱16的材料时，为了防止铜从表面飞散对半导体晶片W产生恶劣的影响，优选对其表面进行表面处理。在用于处理直径为10英寸的半导体晶片的喷淋头100的情况下，优选设置例如从几十个到一百多个左右的该热传导柱16。
对于上述热传导柱16，在喷淋头100的相对面14侧暴露在等离子体中并接受来自等离子体的热量时，热量向热传导柱16传递，从而防止了喷淋头100的温度过度升高，并且防止了在喷淋头100的中央部和周缘部产生温度分布不均的现象。
即，如图1所示，因为喷淋头100为其周缘部为被支撑固定在等离子体蚀刻装置200的处理腔室201中的结构，因此，在喷淋头100的周缘部，热量容易传递(逃逸)到处理腔室201中，而在中央部为不传递热量的地方(在中央部并没有形成热逃逸场所的结构)。由此，存在下述倾向，即、喷淋头100的中央部温度变高，周缘部温度变低，温度分布产生偏差。
而且，如上所述，若在喷淋头100的温度分布产生偏差，则图1所示的等离子体P的状态也变得不均匀，并且等离子体蚀刻的状态也变得不均匀。热传导柱16为使这种喷淋头100的温度分布均匀，使等离子体蚀刻状态也变得均匀的部件。由此，热传导柱16被设定成配置在喷淋头100的周缘部附近的高度比配置在中央部的高度低(热容量小)。此外，除热传导柱16的高度外，改变其粗细或者高度和粗细两者，也可以调整热容量。
下面，参照图1对作为具有上述构成的喷淋头100的基板处理装置的等离子体蚀刻装置200的构造进行说明。该等离子体蚀刻装置200构成为电极板上下平行相对、连接等离子体形成用电源的电容耦合型平行平板等离子体蚀刻装置。
等离子体蚀刻装置200具有由例如表面被阳极氧化处理的铝等构成的形成为圆筒状的处理腔室(处理容器)201，该处理腔室201与地连接。在处理腔室201内设置有载置作为被处理基板的半导体晶片且构成下部电极的载置台202。该载置台202与未图示的高频电源等的高频电力施加装置连接。
在载置台202的上侧设置有用于将半导体晶片静电吸附在其上的静电卡盘203。静电卡盘203在绝缘材料之间配置电极而构成，通过对该电极施加直流电压，利用库仑力静电吸附半导体晶片。此外，在载置台202上形成有用于使温度调节介质循环的流路204，能够将吸附在静电卡盘203上的半导体晶片的温度调整为规定的温度。此外，在处理腔室201的侧壁部，形成有用于将半导体晶片搬入、搬出处理腔室201的开口205，这里，设置有用于气密地闭塞开口205的开闭机构206。
在载置台202的上方，以与载置台202间隔规定距离且相对的方式配置有如图2所示的喷淋头100。而且，形成喷淋头100为上部电极，载置台202为下部电极的一对相对电极。
喷淋头100的气体导入部12a与设置在处理腔室201内的气体供给部207连接。从未图示的气体供给机构向气体供给部207供给规定的处理气体(蚀刻气体)。
此外，在喷淋头100的上部设置有向上方直径变小的筒状(喇叭状)的筒状体210，该筒状体210通过开闭控制阀和开闭机构等连接于涡轮分子泵等真空泵(未图示)。这样，筒状体210的内侧成为排气路，热传导柱16被配设在筒状体210内侧的排气路内。此外，在筒状体210的外侧设置有用于使温度调节介质循环来进行温度调节的温度调节机构211。
当利用上述构成的等离子体蚀刻装置200进行半导体晶片蚀刻时，首先，将半导体晶片从开口205搬入处理腔室201内，并将其载置到静电卡盘203上。于是，半导体晶片被吸附在静电卡盘203上。接着，关闭开口205，利用真空泵等，将处理腔室201内抽真空至规定真空度。
之后，将规定流量的规定处理气体(蚀刻气体)从气体供给部207向喷淋头100的气体导入部12a进行供给，该处理气体经过喷淋头100的气体流路12，从气体喷出孔11呈喷淋状供给到载置台202上的半导体晶片上。
然后，将处理腔室201内的压力维持在规定的压力，之后，对载置台202施加规定频率例如13.56MHz的高频电力。这样，在作为上部电极的喷淋头100与作为下部电极的载置台202之间产生高频电场，蚀刻气体发生离解而等离子体化。
在上述蚀刻处理中，从喷淋头100的气体喷出孔11呈喷淋状供给的处理气体因为从分散在喷淋头100中形成的多个排气孔13被排出，因此，不会如同从处理腔室201的下部进行排气的情况那样地形成从半导体晶片的中央部向周边部的气体流。由此，能够使向半导体晶片供给的处理气体更加均匀。此外，喷淋头100接收来自等离子体P的热量而使其温度升高，但是，通过热传导柱16的作用，能够抑制喷淋头100的中央部与周缘部在温度分布方面产生偏差。这样，能够使等离子体P的状态均匀，能够对半导体晶片的各部分实施均匀的蚀刻处理。即，能够使处理面的均匀性提高。
而且，当规定的等离子体蚀刻处理完成时，停止高频电力的施加和处理气体的供给，以与上述顺序相反的顺序，将半导体晶片从处理腔室201内搬出。
如上所述，根据本实施方式的等离子体蚀刻装置200，因为是从喷淋头100向上部排气的结构，因此，能够使向半导体晶片供给的处理气体更加均匀。此外，能够抑制喷淋头100的中央部与周缘部在温度分布方面产生偏差，能够使等离子体P的状态均匀。这样，能够对半导体晶片的各部分实施均匀的蚀刻处理。此外，因为喷淋头100不具有层叠设置使温度调节介质循环的机构，因此，不会使排气孔13的路径变长，也不会使排气性能恶化。
此外，通过上述的等离子体蚀刻装置200，因为从设置在喷淋头100中的排气孔13进行排气，因此，不必与现有的装置一样在载置台202的周围或喷淋头100的周围设置排气路径。由此，处理腔室201的直径能够进一步与作为被处理基板的半导体晶片的外径相近，能够实现装置的小型化。此外，将真空泵设置在处理腔室201的上方，因为从比处理腔室201的处理空间更近的部分排气，所以能够高效地排气，且能够减少真空泵的容量而进一步实现小型化。
然而，在上述实施方式中，如果发生超过热传导柱16的热容量而从等离子体P向喷淋头100传热的情况，则会产生喷淋头100的温度分布不均。这种情况下，如图6所示，设置与筒状体210和热传导柱16连接的热传递部件212，也能够使热量从热传导柱16通过传递部件212向利用温度调节机构211被调节温度的筒状体210传递。
此外，如图7所示，在这种结构的情况下，也可以在热传递部件212上设置有在常温下比热传导柱16的直径稍大的通孔213，构成为在常温下热传递部件212与热传导柱16成为非接触的状态，只在热传导柱16的温度升高发生热膨胀时，热传导柱16才与热传递部件212接触，通过热传递部件212进行放热。在这种情况下，热传导柱16与热传递部件212变成接触状态，一旦进行放热之后，热传导柱16的温度降低，热传导柱16与热传递部件212再次成为非接触状态，能够只在热传导柱16的温度升高时通过热传导部件212进行放热。在这种结构的情况下，优选使用比热传递部件212的线膨胀系数大的金属材料作为热传导柱16。
Claims (10)
1.一种喷淋头，该喷淋头以与用于载置基板的载置台相对的方式设置于在内部处理所述基板的腔室内，用于从设置在与所述载置台相对的相对面上的多个喷出孔向所述基板以喷淋状供给气体，该喷淋头的特征在于：
在与所述相对面相反侧的面上立设有多个构成为棒状的热传导柱。
2.根据权利要求1所述的喷淋头，其特征在于：
能够改变所述热传导柱的长度和/或粗细来调整热容量。
3.根据权利要求1或2所述的喷淋头，其特征在于：
所述热传导柱由铝、不锈钢和铜中的任一种构成。
4.根据权利要求1或2所述的喷淋头，其特征在于：
该喷淋头包括多个贯通所述相对面和所述相反侧的面之间设置的、用于从所述相对面向所述相反侧的面进行排气的排气孔，所述热传导柱被设置在排气路径内。
5.根据权利要求4所述喷淋头，其特征在于：
所述热传导柱通过热传递部件与构成所述排气路径的筒状体的侧壁部连接。
6.根据权利要求5所述的喷淋头，其特征在于：
所述热传导柱构成为在常温下与所述热传递部件呈非接触状态，在热膨胀时与所述热传递部件接触。
7.根据权利要求4所述的喷淋头，其特征在于：
在所述筒状体的侧壁部设置有温度调节单元。
8.一种等离子体处理装置，其具有喷淋头，该喷淋头以与用于载置基板的载置台相对的方式设置于在内部处理所述基板的腔室内，用于从设置在与所述载置台相对的相对面上的多个喷出孔向所述基板以喷淋状供给气体，该等离子体处理装置的特征在于：
在所述喷淋头的与所述相对面相反侧的面上立设有多个构成为棒状的热传导柱。
9.根据权利要求8所述的等离子体处理装置，其特征在于：
所述喷淋头包括多个贯通所述相对面和所述相反侧的面之间设置的、用于从所述相对面向所述相反侧的面进行排气的排气孔，所述热传导柱被设置在排气路径内。
10.根据权利要求8或9所述的等离子体处理装置中，其特征在于：
所述喷淋头形成与所述载置台相对的相对电极。
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Also Published As
| Publication number | Publication date |
|---|---|
| US20100230051A1 (en) | 2010-09-16 |
| TW201127216A (en) | 2011-08-01 |
| KR20100102068A (ko) | 2010-09-20 |
| US8282769B2 (en) | 2012-10-09 |
| TWI514932B (zh) | 2015-12-21 |
| KR101493110B1 (ko) | 2015-02-12 |
| JP2010212425A (ja) | 2010-09-24 |
| CN101834120B (zh) | 2012-05-02 |
| JP5221421B2 (ja) | 2013-06-26 |
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