CN101821848B - 用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块和经封装半导体组合件 - Google Patents

用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块和经封装半导体组合件 Download PDF

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CN101821848B
CN101821848B CN2008801105272A CN200880110527A CN101821848B CN 101821848 B CN101821848 B CN 101821848B CN 2008801105272 A CN2008801105272 A CN 2008801105272A CN 200880110527 A CN200880110527 A CN 200880110527A CN 101821848 B CN101821848 B CN 101821848B
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lead
wire
nude film
fin
die attach
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CN101821848A (zh
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保罗·阿尔曼德·A·卡洛
玛吉·T·里奥斯
蒂布西奥·A·马尔多
孙俊瑞
欧文·伊恩·V·阿尔马格罗
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Fairchild Semiconductor Corp
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Fairchild Semiconductor Corp
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/181—Encapsulation

Abstract

本说明书中揭示一种具有多个裸片的无线半导体封装，所述多个裸片中的至少两者附接到导热且导电的散热片。所述封装提供用于耗散热量的有效手段。

Description

用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块和经封装半导体组合件
相关申请案的交叉参考
本申请案主张2007年10月9日申请的第11/869,307号美国实用新型专利申请案的优先权。
技术领域
本发明在一个实施例中涉及一种具有至少两个半导体裸片的无线半导体封装。所述两个裸片以使得可有效地耗散热量的方式来配置。
背景技术
半导体装置常常受热量耗散问题所困扰。举例来说，简单的二极管将在使用期间产生热量且过分加热可能损坏或破坏半导体装置。其它半导体装置还遭受类似的缺点。除了过热以外，重复的加热和冷却循环也常常致使装置的组件发生故障。此类装置中所存在的导线是另一机械故障源。此外，将此类导线附接到半导体裸片是困难且昂贵的，因为需要专门的机械和额外制造步骤来进行所述附接。已做出许多尝试来克服这些不足，但没有一个尝试已证明是完全令人满意的。
布歇(Boucher)等人的第4,990,987号美国专利(用于半导体装置的超温传感器和保护器(Over-temperature sensor and protector for semiconductor devices))揭示了一种具有热敏电阻器的半导体装置，所述热敏电阻器与半导体是热量感测关系。在装置的温度上升超过特定阈值时，热敏电阻器的电阻增加。以此形式，可防止装置的过热。
埃斯塔(Estes)等人的第5,714,789号美国专利(电路板安装式IC封装冷却设备(Circuit board-mounted IC package cooling apparatus))揭示了一种填充有帮助耗散热量的导热液体的半导体封装。遗憾的是，此类液体系统的使用已证明是有问题的。
因此，需要一种较有效的耗散半导体装置所产生的热量的方法。
还需要提供一种避免导线将裸片连接到引线框的半导体装置。
发明内容
本发明在其一种形式中包含一种具有多个半导体装置(例如二极管)的经封装组合件。在一个实施例中，这些裸片以无线方式串联连接。此类配置促进从半导体装置耗散热量，以及提供坚固的无线构造。
本发明的优点是热量分布于较广区域上，且因此更有效地耗散。
本发明的另一优点是不需要导线来将半导体裸片连接到引线框。此类配置实质上比现有技术半导体坚固，且在制造装置期间省略了布线步骤。另外，无线附接还充当热导体且耗散热量。
附图说明
参看附图来揭示本发明，在附图中：
图1是经封装半导体组合件的视图，其展示外壳的内部组件；
图2是图1的封装的侧视图；
图3是图1的封装的组件的分解视图；
图4是本发明的一个工艺的流程图；
图5是本发明的一个实施例的内部组件的示意图；
图6是有线封装的内部组件的示意性轮廓；以及
图7是本发明的另一实施例的轮廓图。
在所有若干视图中对应参考符号始终指示对应部分。本文中所陈述的实例说明本发明的若干实施例，但不应理解为以任何方式限制本发明的范围。
具体实施方式
图1是经封装半导体封装100的视图。半导体封装100具有多个引线106、108和110，其每一者延伸离开环氧树脂模制化合物104。环氧树脂模制化合物104以幻影展示以更好地说明封装100的内部组件。环氧树脂模制化合物104的底面固持散热片102。在一个实施例中，散热片102是导电且导热的材料，例如铜。裸片112和114安置在环氧树脂模制化合物104内。在图1所描绘的实施例中，这些裸片以无线方式串联连接。在另一实施例(未图示)中，裸片以无线方式并联连接。如将在本说明书的其它地方进一步详细论述，此类无线配置准许将裸片112和114安置在散热片102与裸片附接垫210(见图2)之间，散热片102和裸片附接垫210两者均为导热且导电的。此无线配置使得两个裸片能够共享共同引线(引线110)，以及提供用于耗散热量的有效手段。典型的现有技术半导体装置对于装置上的每一端子具有一个引线。本文中所揭示的无线配置含有比端子少的引线。所述无线配置还将裸片放置在其与两个导热部件(散热片和引线)邻接的位置中。在此类系统中，散热片和引线用于双重目的，作为导热体和导电体两者。图2描绘此新颖配置的一部分。
图2是图1的封装100的侧视图，其说明环氧树脂模制化合物104内部的一些组件。在图2所描绘的实施例中，环氧树脂模制化合物104的一侧固持嵌入的散热片102。封装100可通过将螺钉穿过安装孔208来安装到表面(未图示)。裸片112的一个端子(例如，阴极)与散热片102成电连通且通过传导性粘合剂202附接到所述散热片102。传导性粘合剂202可为(例如)传导性环氧树脂或焊料材料，例如含铅焊料或无铅焊料。裸片112的另一端子(例如，阳极)与引线106的裸片附接垫210成电连通。此类连接是通过传导性粘合剂206来进行的。在一个实施例中，传导性粘合剂202是高熔点焊料，且粘合剂206是低熔点焊料。此类焊料的成分在本说明书的其它地方论述。有利的是，此类配置准许在不熔化(且因此松解)导体202的情况下熔化粘合剂206。引线106从环氧树脂模制化合物104内延伸且在末端212处结束，所述末端212未安置在环氧树脂模制化合物104内。
图2还描绘引线110及其到散热片102的连接。引线110(还是见图1)通过传导性粘合剂206连接到散热片102。引线110也延伸离开环氧树脂模制化合物104，且并行地行进到引线106(见图1)。图1的裸片114可以类似方式连接到引线108，但此类连接的细节在本说明书的其它地方论述。
图3是图1的封装100的分解图，其展示本发明的一个实施例的环氧树脂模制化合物104内部的组件层。环氧树脂模制化合物104一般由例如模制化合物等塑料材料制成。模制化合物通常为聚合树脂，但也可使用其它合适的封装材料。裸片112和114的底侧通过高熔点传导性粘合剂202连接到散热片102。裸片112和114可为(例如)简单的硅二极管。在另一实施例中，可使用更复杂的半导体裸片。举例来说，可使用倒装芯片裸片。散热片102可为导热且导电的任何材料。举例来说，散热片102可包含铜。传导性粘合剂202可为(例如)基于铅的焊料(例如95.5％的铅、2％的锡和2.5％的银)或非含铅材料(例如环氧树脂)。裸片112和114的顶侧通过传导性粘合剂206连接到引线框300的裸片附接垫，所述引线框300包括引线106、108和110。粘合剂206在一个实施例中为熔点低于粘合剂202的熔点的焊料材料。举例来说，当粘合剂202为95.5％的Pb、2％的Sn和2.5％的Ag时，粘合剂202可为88％的Pb、10％的Sn、2％的Ag。有利的是，可利用焊料成分上的此差异在不松解高熔点焊料的情况下激活低熔点焊料。在一个实施例中，所述焊料具有至少约10℃的熔点差。引线框300和引线106、108和110为导热且导电的，且可由包含例如铜等导电金属的传导性衬底形成。衬底可镀有一层或一层以上其它传导性金属和金属合金，例如镍、钯等。引线框材料的一个实例为TAMAC 4(Fe 0.07、P 0.03、Zn 0.05和剩余Cu)。所属领域的技术人员将明白其它合适的引线框材料。环氧树脂模制化合物104安置在组合件的内部组件上方。
图4是对用于产生无线半导体封装100的工艺400的描绘。在图4所示的实例中，产生封装100(见图1)。所属领域的技术人员在通过阅读本说明书而受益之后将容易了解用于产生在本说明书的其它地方所论述的其它组合件的替代工艺。与现有技术有线处理相比，无导线的工艺400的一个优点是省略了布线步骤。由于可省略此单独步骤，所以所得工艺更有效且更经济。所得产品的无线配置还具有某些热优点，其在本说明书的其它地方论述。
在工艺400的步骤402中，将传导性粘合剂202安装到散热片102。举例来说，可使用由95.5％的Pb、2％的Sn和2.5％的Ag形成的焊料来焊料涂覆所述散热片102。散热片102可为导电且导热的任何合适材料。在步骤404中，使用粘合剂202将裸片112和114安装到散热片102。一旦裸片112和114被紧固地附接，便在步骤406中使用传导性粘合剂206来涂覆此类裸片的上表面。传导性粘合剂206可在一些实施例中经选择以具有比粘合剂202低的熔点。举例来说，传导性粘合剂可由88％的Pb、10％的Sn和2％的Ag的组合物形成。在步骤408中，当附接引线框300时，可使用合适的温度以在不熔化粘合剂202的情况下熔化粘合剂206。引线框300可由例如铜等传导性材料形成，且一般镀有各种金属或金属合金。此类引线框300通过冲压或蚀刻金属坯件以形成引线106、108和110以及系条409而成形。在工艺400的步骤410中，施加环氧树脂模制化合物104，因而产生中间组合件411。接着在步骤412中切除引线框的非所要的系条409，进而产生封装100。
图5是封装100中的电连接的示意性说明。为了简化说明起见，已省略了粘合剂。如图5中可见，裸片112安置在传导性散热片102上，阴极侧向下。相反，裸片114安置在散热片102上，阳极侧向下。以此方式，所述两个裸片112和114串联连接。当电穿过裸片112和114时，产生热量。封装100使用串联连接的至少两个半导体裸片。由于所述裸片彼此远远地隔开，所以裸片较容易由环境冷却，且较有效地耗散热量。此类配置增加了热量耗散的效率，且提供优于现有技术半导体装置的实质性优点。
再次参看图5，可以看到，引线106和108在每一细长引线的一端处具有裸片附接垫。举例来说，引线108终止于裸片附接垫502中。裸片附接垫502安置于裸片114的表面区域上方，使得两个组件的表面区域在其相应区域的实质部分上邻接。在一个实施例中，裸片114的表面区域的至少一半由裸片附接垫502覆盖。此类配置允许进行无导线的电连接，这增加了封装100的耐用性。归因于裸片附接垫502与裸片114的表面的邻接重叠，裸片附接垫502充当热导体和电导体两者。此类配置准许引线106和108耗散热量，且大大增加了热量耗散的效率。虽然图中仅展示两个裸片，但应了解，可如此使用任何数目的裸片。另外，其它裸片配置模式也是可能的，且预期此些模式与本发明一起使用。
图6是对封装600的示意性描绘，所述封装600具有与封装100的配置不同的电配置。在封装600中，裸片304连接到导体604，所述导体604放置成通过连接606与引线108成电连通。连接606可为(例如)有线连接，例如金导线或传导性条带。导体604可为(例如)铜板。导体604通过绝缘体602与散热片102电隔离，因此确保裸片304的一个端子不电连接到散热片102。绝缘体602可为(例如)氧化铝层。裸片304的另一端子通过导体608连接到散热片102。裸片204电连接到散热片102，且还通过导体610连接到引线106。图7中给出封装600的电连接的更详细示意图。
使用比较性计算机模型来比较封装100与封装600的热量耗散能力。在此模型中，使用计算机模拟来预测封装100的裸片112和113以及封装600的裸片204和304的温度。在这些模拟中，将两个组合件安置在温度为25℃的由铝制成的无限冷却块上，使得散热片102邻近于所述块。在这些模拟中，低熔点裸片粘合剂为88％的Pb、10％的Sn、2％的Ag，高熔点裸片粘合剂为95.5％的铅、2％的锡和2.5％的银，裸片为硅酮二极管，绝缘体为氧化铝，且散热片为纯铜。功率输入为每芯片100W。所述裸片中的每一者所达到的温度在下表中给出。
 有线封装600   无线封装100   差值
  裸片304/112   161℃   81℃   80℃
  裸片204/114   88℃   81℃   7℃
未与散热片102热接触的裸片304达到161℃的温度，其为无线封装100中的对应裸片几乎两倍那么热。可通过比较裸片204(有线附接)与裸片114(通过导热裸片附接垫的无线附接)的温度而看到充当导热体的裸片附接垫的效果。封装100的无线配置经预测为提供优于对应有线配置的7℃的温度优势。
图7是对封装700的描绘，所述封装700具有第一裸片702和第二裸片704。在图7中所描绘的实施例中，裸片702和704为MOSFET裸片。如图7中所示，引线110附接到散热片102，散热片102与漏极706a和漏极706b邻接。源极708a和708b电连接到引线106，而栅极710a和710b电连接到引线108。裸片702和704通过散热片102连接到共同引线110。
所属领域的技术人员应理解，散热片102可为简单的金属夹或可更复杂。举例来说，散热片102可为具有绝缘表面的金属夹，其中在所述绝缘表面上具有触点和/或传导性迹线。以此方式，一裸片的一个或一个以上端子可在不需要导线的情况下连接到另一裸片的端子。
尽管已参看优选实施例描述了本发明，但所属领域的技术人员将理解，在不脱离本发明的范围的情况下，可做出各种改变且可使用等效物来替代其元件以适于特定情形。因此，希望本发明不限于揭示为预期实行本发明的最佳模式的特定实施例，而是本发明将包括处于所附权利要求书的范围和精神内的所有实施例。

Claims (13)

1.一种用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块，其包含：
散热片，其具有第一和第二表面且包含导热且导电的材料；
第一和第二裸片，每一裸片在其上表面上具有至少一个端子且在其下表面上具有一个端子，所述裸片附接到所述散热片的所述表面中的一者以在所述端子与所述散热片之间建立电连接；
引线框，其包括三个细长引线，每一引线在安置于封装材料内部的一个末端处具有裸片附接垫，且另一末端从所述封装材料延伸，其中
第一引线使其裸片附接垫连接到所述第一裸片，
第二引线使其裸片附接垫连接到所述第二裸片，且
第三引线使其裸片附接垫连接到所述散热片，借此所述第一引线提供到所述第一裸片的外部连接，所述第二引线提供到所述第二裸片的外部连接，且所述第三引线提供到所述裸片的所述下表面上的所述端子的所述电连接的外部连接；以及
所述封装材料，其包封所述引线的一部分、所述裸片和所述散热片且暴露所述散热片的另一表面以用于将热量从所述裸片传递到周围环境。
2.根据权利要求1所述的多芯片模块，其中所述模块具有安装孔。
3.根据权利要求1所述的多芯片模块，其中所述第一和第二裸片为二极管。
4.根据权利要求1所述的多芯片模块，其中所述第一和第二裸片为MOSFET裸片。
5.一种经封装半导体组合件，其包含：
封装材料，其至少一侧包含导电且导热的散热片；
第一、第二和第三细长引线，每一引线在安置于所述封装材料内部的一个末端处具有裸片附接垫，且另一末端从所述封装材料延伸；
第一和第二二极管，其两者均安置在所述封装材料内，每一二极管在其上表面上具有至少一个端子且在其下表面上具有一个端子，所述二极管以无线方式附接到所述散热片的表面中的一者以在所述端子与所述散热片之间建立电连接；
所述第一二极管以无线方式连接到所述第一引线的所述裸片附接垫；
所述第二二极管以无线方式连接到所述第二引线的所述裸片附接垫；且
所述散热片以无线方式连接到所述第三引线。
6.根据权利要求5所述的组合件，其中所述第一二极管的表面区域与所述第一引线的所述裸片附接垫邻接，使得所述第一二极管的所述表面区域的至少一半由所述第一引线的所述裸片附接垫覆盖。
7.根据权利要求6所述的组合件，其中所述第二二极管的表面区域与所述第二引线的所述裸片附接垫邻接，使得所述第二二极管的所述表面区域的至少一半由所述第一引线的所述裸片附接垫覆盖。
8.根据权利要求5所述的组合件，其中所述第一二极管与所述第二二极管串联连接。
9.根据权利要求5所述的组合件，其中所述第一和第二二极管用第一焊料以无线方式附接到所述散热片的所述表面中的一者且使用第二焊料分别连接到所述第一和第二引线的所述裸片附接垫，其中所述第一焊料和第二焊料具有至少10℃的熔点差。
10.一种用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块，其包含：
散热片，其具有第一和第二表面且包含导热且导电的材料；
串联连接的第一和第二裸片，每一裸片在其上表面上具有至少一个端子且在其下表面上具有一个端子，所述裸片附接到所述散热片的所述表面中的一者以在所述端子与所述散热片之间建立电连接；
三个细长引线，每一引线在安置于封装材料内部的一个末端处具有裸片附接垫，且另一末端从所述封装材料延伸，其中
第一引线使其裸片附接垫附接到所述第一裸片，使得热量从所述第一裸片传递到其裸片附接垫，
第二引线使其裸片附接垫附接到所述第二裸片，使得热量从所述第二裸片传递到其裸片附接垫，且
第三引线使其裸片附接垫连接到所述散热片，借此所述第一引线提供到所述第一裸片的外部连接，所述第二引线提供到所述第二裸片的外部连接，且所述第三引线提供到所述裸片的所述下表面上的所述端子的所述电连接的外部连接；以及
所述封装材料，其包封所述引线的一部分、所述裸片和所述散热片的一个表面且暴露所述散热片的另一表面以用于将热量从所述裸片传递到周围环境。
11.根据权利要求10所述的多芯片模块，其中所述散热片包含铜。
12.根据权利要求10所述的多芯片模块，其中所述第一裸片和所述第二裸片在没有导线的情况下串联附接。
13.根据权利要求10所述的多芯片模块，其中所述第一裸片和第二裸片为二极管。
CN2008801105272A 2007-10-09 2008-10-03 用于将两个或两个以上裸片以无线方式连接到三个外部引线的多芯片模块和经封装半导体组合件 Expired - Fee Related CN101821848B (zh)

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