JP2011501414A - 効率的熱放散のための配線なし半導体パッケージ - Google Patents
効率的熱放散のための配線なし半導体パッケージ Download PDFInfo
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- JP2011501414A JP2011501414A JP2010528951A JP2010528951A JP2011501414A JP 2011501414 A JP2011501414 A JP 2011501414A JP 2010528951 A JP2010528951 A JP 2010528951A JP 2010528951 A JP2010528951 A JP 2010528951A JP 2011501414 A JP2011501414 A JP 2011501414A
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- die
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 230000017525 heat dissipation Effects 0.000 title description 8
- 239000004020 conductor Substances 0.000 claims description 69
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 17
- 229920006336 epoxy molding compound Polymers 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000005022 packaging material Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052745 lead Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002470 thermal conductor Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01—Chemical elements
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/181—Encapsulation
Abstract
Description
幾つかの図面を通して対応する参照符号は対応する部品を示している。本明細書で提示される例は、本発明の幾つかの実施形態を例示しているが、如何なる形でも本発明の範囲を制限するものとして解釈されるべきでない。
Claims (14)
- 2つ以上のダイを3つの外部用導線に配線なしで接続するマルチチップモジュールであって、
第1及び第2の面を有すると共に、熱伝導性及び導電性を有する材料を含むヒートシンクと、
第1及び第2のダイであり、前記ダイの各々はその上面に少なくとも1つの端子を有し且つその下面に1つの端子を有し、前記ダイは前記ヒートシンクの1面に取り付けられて前記端子と前記ヒートシンクとの間の電気的接続を作出する、第1及び第2のダイと、
3つの延伸された導線を含む導線フレームであり、前記導線の各々は、パッケージ材料内部に配置されたダイ取付パッドをその一端に有し、前記パッケージ材料からその他端が伸長し、第1の導線はそのダイ取付パッドが前記第1のダイに接続され、第2の導線はそのダイ取付パッドが前記第2のダイに接続され、第3の導線はそのダイ取付パッドが前記ヒートシンクに接続され、これによって前記第1の導線は前記第1のダイに外部接続を提供し、前記第2の導線は前記第2のダイに外部接続を提供し、前記第3の導線は前記ダイの下面上の端子の電気的接続に外部接続を提供する、導線フレームと、
前記導線の一部、前記ダイ及び前記ヒートシンクを包み、前記ヒートシンクの他面を露出したままにすることで熱を前記ダイから周囲環境に伝達するパッケージ材料と、
含むことを特徴とするマルチチップモジュール。 - 取付用穴を有することを特徴とする請求項1に記載のマルチチップモジュール。
- 前記第1及び第2のダイはダイオードであることを特徴とする請求項1に記載のマルチチップモジュール。
- 前記第1及び第2のダイはMOSFETダイであることを特徴とする請求項1に記載のチップモジュール。
- パッケージ化された半導体アセンブリであって、
パッケージ材料であり、その少なくとも1面が導電性及び熱伝導性を有するヒートシンクを含む、パッケージ材料と、
第1、第2及び第3の延伸された導線であり、前記導線の各々は、パッケージ材料内部に配置されたダイ取付パッドをその一端に有し、前記パッケージ材料からその他端が伸長する、導線と、
第1及び第2のダイオードであり、それら双方は前記パッケージ材料内に配置され、前記ダイの各々はその上面上に少なくとも1つの端子を有し且つその下面に1つの端子を有し、前記ダイオードは前記ヒートシンクの1面に配線なしで取り付けられて前記端子と前記ヒートシンクとの間に電気的接続を作出し、前記第1のダイオードは前記第1の導線のダイ取付パッドに配線なしで接続され、前記第2のダイオードは前記第2の導線のダイ取付パッドに配線なしで接続され、前記ヒートシンクは前記第3の導線に配線なしで接続されている、第1及び第2のダイオードと、
を含むことを特徴とする半導体アセンブリ。 - 前記第1のダイオードの表面領域の少なくとも半分が前記第1の導線のダイ取付パッドよって覆われるように、前記第1のダイオードの表面領域は前記第1の導線のダイ取付パッドに接触していることを特徴とする請求項5に記載の半導体アセンブリ。
- 前記第2のダイオードの表面領域が前記第2の導線のダイ取付パッドに接触していることによって、前記第2のダイオードの表面領域の少なくとも半分は前記第1の導線のダイ取付パッドよって覆われていることを特徴とする請求項6に記載の半導体アセンブリ。
- 前記第1のダイオード及び前記第2のダイオードは直列に接続されていることを特徴とする請求項5に記載の半導体アセンブリ。
- 前記第1及び第2のダイオードは、前記ヒートシンクの1面に第1のハンダによって取り付けられ且つ前記第1及び第2の導線のダイ取付パッドに第2のハンダを用いて各々接続され、前記第1のハンダと第2のハンダとは少なくとも略10℃の融点差を有することを特徴とする請求項5に記載の半導体アセンブリ。
- 2つ以上のダイを3つの外部用導線に配線なしで接続するマルチチップモジュールであって、
第1及び第2の面を有すると共に、熱伝導性及び導電性を有する材料を含むヒートシンクと、
直列に接続された第1及び第2のダイであり、前記ダイの各々はその上面に少なくとも1つの端子を有し且つその下面に1つの端子を有し、前記ダイは前記ヒートシンクの1面に取り付けられて前記端子と前記ヒートシンクとの間の電気的接続を作出する、第1及び第2のダイと、
3つの延伸された導線であり、前記導線の各々は、パッケージ材料内部に配置されたダイ取付パッドをその一端に有し、前記パッケージ材料からその他端が伸長し、第1の導線はそのダイ取付パッドが前記第1のダイに接続されることによって、前記第1のダイからそのダイ取付パッドに熱が伝達し、第2の導線はそのダイ取付パッドが前記第2のダイに接続されることによって、前記第2のダイからそのダイ取付パッドに熱が伝達し、第2の導線はそのダイ取付パッドが前記ヒートシンクに接続され、これによって前記第1の導線は前記第1のダイに外部接続を提供し、前記第2の導線は前記第2のダイに外部接続を提供し、前記第3の導線は前記ダイの下面上の端子の電気的接続に外部接続を提供する、導線と、
前記導線の一部、前記ダイ及び前記ヒートシンクの1面を包み、前記ヒートシンクの他面を露出したままにすることで熱を前記ダイから周囲環境に伝達するパッケージ材料と、
含むことを特徴とするマルチチップモジュール。 - 前記ヒートシンクは銅からなることを特徴とする請求項10に記載のアセンブリ。
- 前記第1の半導体ダイ及び前記第2の半導体ダイが配線なしに直列に接続されていることを特徴とする請求項10に記載のアセンブリ。
- 前記第1及び第2の半導体ダイはダイオードであることを特徴とする請求項10に記載のアセンブリ。
- パッケージ化された半導体アセンブリを形成する方法であって、
第1及び第2の面を有すると共に、熱電導性及び導電性を有する材料からなるヒートシンク上に第1の伝導性接着剤を配置するステップと、
第1及び第2のダイを前記ヒートシンクに前記第1の伝導性接着剤によって取り付けるステップであり、前記ダイの各々はその上面に少なくとも1つの端子を有し且つその下面に1つの端子を有し、前記ダイは前記ヒートシンクの1面に前記第1の伝導性接着剤によって取り付けられて前記端子と前記ヒートシンクとの間の電気的接続を作出する、ステップと、
前記第1及び第2のダイの他面上に第2の伝導性接着剤を配置するステップと、
3つの延伸された導線を有する導線フレームを、前記第1及び第2のダイの他面に前記第2の伝導性接着剤によって取り付けるステップであり、前記3つの延伸された導線は前記第1のダイに取り付けられた第1の導線、前記第2のダイに取り付けられた第2の導線、及び前記ヒートシンクに取り付けられた第3の導線を含む、ステップと、
前記第1及び第2のダイ及び前記延伸された導線の一部をエポキシ成形合成物によって包むことよって、前記延伸された導線は前記第1のダイ、第2のダイ及び前記ヒートシンクに外部接続を提供するステップと、
を含むことを特徴とする方法。
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TW200935567A (en) | 2009-08-16 |
JP4712123B2 (ja) | 2011-06-29 |
US7586179B2 (en) | 2009-09-08 |
CN101821848A (zh) | 2010-09-01 |
TWI470748B (zh) | 2015-01-21 |
US20090091010A1 (en) | 2009-04-09 |
DE112008002559T5 (de) | 2010-08-26 |
KR101013001B1 (ko) | 2011-02-10 |
CN101821848B (zh) | 2012-06-13 |
WO2009048798A1 (en) | 2009-04-16 |
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