CN101702950B - 辐照脉冲热处理方法和设备 - Google Patents

辐照脉冲热处理方法和设备 Download PDF

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Publication number
CN101702950B
CN101702950B CN200880014360XA CN200880014360A CN101702950B CN 101702950 B CN101702950 B CN 101702950B CN 200880014360X A CN200880014360X A CN 200880014360XA CN 200880014360 A CN200880014360 A CN 200880014360A CN 101702950 B CN101702950 B CN 101702950B
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pulse
workpiece
time
target surface
surface area
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CN101702950A (zh
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大卫·马尔科姆·卡姆
史蒂夫·麦科伊
格雷戈·斯图尔特
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Beijing E Town Semiconductor Technology Co Ltd
Mattson Technology Inc
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Mattson Technology Canada Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D11/00—Process control or regulation for heat treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Laser Beam Processing (AREA)
CN200880014360XA 2007-05-01 2008-03-20 辐照脉冲热处理方法和设备 Active CN101702950B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92411507P 2007-05-01 2007-05-01
US60/924,115 2007-05-01
PCT/CA2008/000546 WO2008131513A1 (en) 2007-05-01 2008-03-20 Irradiance pulse heat-treating methods and apparatus

Publications (2)

Publication Number Publication Date
CN101702950A CN101702950A (zh) 2010-05-05
CN101702950B true CN101702950B (zh) 2012-05-30

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US (2) US8005351B2 (enExample)
JP (2) JP2010525581A (enExample)
CN (1) CN101702950B (enExample)
WO (1) WO2008131513A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7629275B2 (en) * 2007-01-25 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-time flash anneal process
JP5214153B2 (ja) * 2007-02-09 2013-06-19 大日本スクリーン製造株式会社 熱処理装置
US9498845B2 (en) * 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
US20090120924A1 (en) * 2007-11-08 2009-05-14 Stephen Moffatt Pulse train annealing method and apparatus
US7800081B2 (en) * 2007-11-08 2010-09-21 Applied Materials, Inc. Pulse train annealing method and apparatus
JP5346484B2 (ja) 2008-04-16 2013-11-20 大日本スクリーン製造株式会社 熱処理方法および熱処理装置
US8129284B2 (en) * 2009-04-28 2012-03-06 Dainippon Screen Mfg. Co., Ltd. Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
CN102054656B (zh) * 2009-10-30 2013-06-12 中芯国际集成电路制造(上海)有限公司 快速热处理中控制晶片温度的方法
CN103430276B (zh) * 2010-05-07 2017-03-29 派拉斯科Ip有限责任公司 隅角立方体辐射控制
JP5820661B2 (ja) * 2010-09-14 2015-11-24 東京エレクトロン株式会社 マイクロ波照射装置
JP5606852B2 (ja) * 2010-09-27 2014-10-15 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP2012074430A (ja) * 2010-09-28 2012-04-12 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
US9279727B2 (en) * 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
JP5801574B2 (ja) * 2011-03-14 2015-10-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP5801575B2 (ja) * 2011-03-14 2015-10-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
TWI467660B (zh) * 2011-03-14 2015-01-01 Screen Holdings Co Ltd Heat treatment method and heat treatment device
TWI566300B (zh) 2011-03-23 2017-01-11 斯克林集團公司 熱處理方法及熱處理裝置
JP5797916B2 (ja) * 2011-03-23 2015-10-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP2012199470A (ja) * 2011-03-23 2012-10-18 Dainippon Screen Mfg Co Ltd 熱処理方法および熱処理装置
JP5944152B2 (ja) * 2011-12-07 2016-07-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP6026090B2 (ja) * 2011-09-26 2016-11-16 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
US9449825B2 (en) * 2012-02-03 2016-09-20 SCREEN Holdings Co., Ltd. Heat treatment apparatus for heating substrate by irradiation with flashes of light, and heat treatment method
JP5996409B2 (ja) * 2012-12-12 2016-09-21 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
EP3083034A4 (en) * 2013-12-20 2017-09-13 Xenon Corporation Continuous flash lamp sintering
JP5847905B2 (ja) * 2014-09-30 2016-01-27 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP5998191B2 (ja) * 2014-12-01 2016-09-28 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法
US9724910B2 (en) 2015-03-20 2017-08-08 Mitsubishi Paper Mills Limited Printing paper for industrial rotary inkjet printing press and method for producing printed material
WO2017004314A1 (en) * 2015-06-30 2017-01-05 Magna International Inc. System for conditioning material using a laser and method thereof
KR102085076B1 (ko) 2015-12-30 2020-03-05 맷슨 테크놀로지, 인크. 아크 램프용 질소 주입
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
KR102104468B1 (ko) * 2015-12-30 2020-04-27 맷슨 테크놀로지, 인크. 밀리세컨드 어닐닝 시스템에서 공정 균일성을 향상시키기 위한 방법
US10840114B1 (en) * 2016-07-26 2020-11-17 Raytheon Company Rapid thermal anneal apparatus and method
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
WO2019036269A1 (en) 2017-08-16 2019-02-21 Mattson Technology, Inc. THERMAL TREATMENT OF CLOSED SHAPE WORKPIECES
CN112385028B (zh) * 2018-04-12 2024-06-25 玛特森技术公司 低热量预算退火
US10573532B2 (en) 2018-06-15 2020-02-25 Mattson Technology, Inc. Method for processing a workpiece using a multi-cycle thermal treatment process
JP7307563B2 (ja) * 2019-03-18 2023-07-12 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN119943236B (zh) * 2025-04-08 2025-06-20 天目山实验室 一种二维材料制备条件的确定方法、装置、设备及介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303411B1 (en) * 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6366308B1 (en) * 2000-02-16 2002-04-02 Ultratech Stepper, Inc. Laser thermal processing apparatus and method
US20070069161A1 (en) * 2005-09-14 2007-03-29 Camm David M Repeatable heat-treating methods and apparatus

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2794938A (en) 1953-03-05 1957-06-04 Philips Corp Low-pressure arc-discharge tube arrangement
FR2264431B1 (enExample) 1974-03-14 1976-12-17 Comp Generale Electricite
US4255046A (en) 1979-09-19 1981-03-10 Xerox Corporation Variable output power supply for flash unit
US4539431A (en) 1983-06-06 1985-09-03 Sera Solar Corporation Pulse anneal method for solar cell
JPS60258928A (ja) 1984-02-28 1985-12-20 タマラツク・サイエンテイフイツク・カンパニ−・インコ−ポレ−テツド 半導体ウエ−ハの加熱装置および方法
US4698486A (en) 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
DE3528065A1 (de) 1984-08-06 1986-02-13 Canon K.K., Tokio/Tokyo Einrichtung zur blitzlichtfotografie
JPS61198735A (ja) 1985-02-28 1986-09-03 Fujitsu Ltd フラツシユランプアニ−ル装置
JPS6215826A (ja) 1985-07-15 1987-01-24 Nec Corp アニ−ル方法
US4789992A (en) 1985-10-15 1988-12-06 Luxtron Corporation Optical temperature measurement techniques
JPS62112322A (ja) 1985-11-12 1987-05-23 Nippon Kogaku Kk <Nikon> レ−ザアニ−ル装置
JPS63188940A (ja) 1987-01-30 1988-08-04 Nikon Corp 光加熱装置
US5001327A (en) * 1987-09-11 1991-03-19 Hitachi, Ltd. Apparatus and method for performing heat treatment on semiconductor wafers
US5188458A (en) 1988-04-27 1993-02-23 A G Processing Technologies, Inc. Pyrometer apparatus and method
JP3190653B2 (ja) 1989-05-09 2001-07-23 ソニー株式会社 アニール方法およびアニール装置
JP2812714B2 (ja) 1989-06-05 1998-10-22 ヤンマーディーゼル株式会社 運搬車
JPH0675009B2 (ja) 1990-01-26 1994-09-21 中外炉工業株式会社 物体表面の温度制御方法
JP2704309B2 (ja) * 1990-06-12 1998-01-26 大日本スクリーン製造株式会社 基板処理装置及び基板の熱処理方法
JP3193494B2 (ja) 1992-01-03 2001-07-30 レール・リキード・ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 希ガスを使用し、グルコースから高フルクトースコーンシロップを製造する方法
JPH05216099A (ja) 1992-01-31 1993-08-27 Canon Inc カメラ及びストロボ装置
JPH064002A (ja) 1992-06-24 1994-01-14 Fujitsu Ltd 閃光制御装置
US5343012A (en) * 1992-10-06 1994-08-30 Hardy Walter N Differentially pumped temperature controller for low pressure thin film fabrication process
DE4313231A1 (de) 1993-04-22 1994-10-27 Baasel Carl Lasertech Stromversorgung für eine Laserblitzlampe
JPH07201765A (ja) 1993-12-28 1995-08-04 Sony Corp 熱処理装置および熱処理方法
US5823681A (en) 1994-08-02 1998-10-20 C.I. Systems (Israel) Ltd. Multipoint temperature monitoring apparatus for semiconductor wafers during processing
US5561735A (en) 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
JP3774485B2 (ja) 1994-12-07 2006-05-17 キヤノン株式会社 ストロボ装置
US5660472A (en) 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5755511A (en) 1994-12-19 1998-05-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6179466B1 (en) 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
WO1997022141A1 (en) 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
US6350326B1 (en) * 1996-01-15 2002-02-26 The University Of Tennessee Research Corporation Method for practicing a feedback controlled laser induced surface modification
JP3639939B2 (ja) 1996-04-10 2005-04-20 株式会社日研工作所 ボーリング用工具
US5756369A (en) 1996-07-11 1998-05-26 Lsi Logic Corporation Rapid thermal processing using a narrowband infrared source and feedback
US5841110A (en) 1997-08-27 1998-11-24 Steag-Ast Gmbh Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems
US6056434A (en) 1998-03-12 2000-05-02 Steag Rtp Systems, Inc. Apparatus and method for determining the temperature of objects in thermal processing chambers
JP2000003875A (ja) 1998-06-12 2000-01-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6154241A (en) * 1998-12-10 2000-11-28 Fuji Photo Film Co., Ltd. Thermosensitive color printing method and thermosensitive color printer
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US8217304B2 (en) 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
US6621199B1 (en) 2000-01-21 2003-09-16 Vortek Industries Ltd. High intensity electromagnetic radiation apparatus and method
US6671235B1 (en) * 2000-03-27 2003-12-30 Ultratech Stepper, Inc. Method of and apparatus for defining disk tracks in magnetic recording media
DE10119047B4 (de) 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
JP4346208B2 (ja) 2000-04-21 2009-10-21 東京エレクトロン株式会社 温度測定方法、熱処理装置及び方法、並びに、コンピュータ可読媒体
US6376806B2 (en) * 2000-05-09 2002-04-23 Woo Sik Yoo Flash anneal
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
JP4092541B2 (ja) * 2000-12-08 2008-05-28 ソニー株式会社 半導体薄膜の形成方法及び半導体装置の製造方法
US6970644B2 (en) 2000-12-21 2005-11-29 Mattson Technology, Inc. Heating configuration for use in thermal processing chambers
DE10101548C1 (de) * 2001-01-15 2002-05-29 Infineon Technologies Ag Reaktionskammer zur Bearbeitung einer Substratscheibe und Verfahren zum Betrieb derselben
EP1227706B1 (en) 2001-01-24 2012-11-28 City University of Hong Kong Novel circuit designs and control techniques for high frequency electronic ballasts for high intensity discharge lamps
US6462313B1 (en) 2001-02-20 2002-10-08 Micron Technology, Inc. Method and apparatus to control temperature in an RTP system
US6888319B2 (en) 2001-03-01 2005-05-03 Palomar Medical Technologies, Inc. Flashlamp drive circuit
JP3696527B2 (ja) 2001-06-20 2005-09-21 大日本スクリーン製造株式会社 熱処理装置
US6887803B2 (en) * 2001-11-08 2005-05-03 Wafermasters, Inc. Gas-assisted rapid thermal processing
TWI242815B (en) 2001-12-13 2005-11-01 Ushio Electric Inc Method for thermal processing semiconductor wafer
JP4029613B2 (ja) 2001-12-25 2008-01-09 ウシオ電機株式会社 閃光放射装置および光加熱装置
CN101324470B (zh) 2001-12-26 2011-03-30 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US6849831B2 (en) 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7223660B2 (en) 2002-07-31 2007-05-29 Intel Corporation Flash assisted annealing
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
CH696573A5 (de) 2003-05-05 2007-07-31 Tecan Trading Ag Vorrichtung zum Abgeben von Lichtimpulsen und Systeme mit solchen Vorrichtungen.
JP4675579B2 (ja) 2003-06-30 2011-04-27 大日本スクリーン製造株式会社 光エネルギー吸収比率の測定方法、光エネルギー吸収比率の測定装置および熱処理装置
US20050018748A1 (en) 2003-07-24 2005-01-27 Ringermacher Harry Israel Actively quenched lamp, infrared thermography imaging system, and method for actively controlling flash duration
US7186981B2 (en) 2003-07-29 2007-03-06 Thermal Wave Imaging, Inc. Method and apparatus for thermographic imaging using flash pulse truncation
JP2005079336A (ja) 2003-08-29 2005-03-24 Toshiba Corp 熱処理装置、熱処理方法及び半導体装置の製造方法
JP4618705B2 (ja) 2003-09-18 2011-01-26 大日本スクリーン製造株式会社 熱処理装置
WO2005029014A2 (en) 2003-09-24 2005-03-31 T Squared Thermal Technologies, Ltd. Pulse forming network and pulse generator
JP2005167005A (ja) * 2003-12-03 2005-06-23 Semiconductor Leading Edge Technologies Inc 半導体基板の熱処理方法、半導体装置の製造方法、及び熱処理装置
US6855916B1 (en) 2003-12-10 2005-02-15 Axcelis Technologies, Inc. Wafer temperature trajectory control method for high temperature ramp rate applications using dynamic predictive thermal modeling
WO2005059991A1 (en) 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
JP2005243797A (ja) 2004-02-25 2005-09-08 Harison Toshiba Lighting Corp 光エネルギー照射装置
US7184657B1 (en) 2005-09-17 2007-02-27 Mattson Technology, Inc. Enhanced rapid thermal processing apparatus and method
US7371998B2 (en) * 2006-07-05 2008-05-13 Semitool, Inc. Thermal wafer processor
JP5214153B2 (ja) * 2007-02-09 2013-06-19 大日本スクリーン製造株式会社 熱処理装置
JP5465373B2 (ja) 2007-09-12 2014-04-09 大日本スクリーン製造株式会社 熱処理装置
JP5221099B2 (ja) 2007-10-17 2013-06-26 大日本スクリーン製造株式会社 熱処理装置および熱処理方法
JP4816634B2 (ja) 2007-12-28 2011-11-16 ウシオ電機株式会社 基板加熱装置及び基板加熱方法
JP5346484B2 (ja) 2008-04-16 2013-11-20 大日本スクリーン製造株式会社 熱処理方法および熱処理装置
JP5356725B2 (ja) 2008-05-13 2013-12-04 大日本スクリーン製造株式会社 熱処理装置
US8559799B2 (en) 2008-11-04 2013-10-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and method for heating substrate by photo-irradiation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303411B1 (en) * 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6366308B1 (en) * 2000-02-16 2002-04-02 Ultratech Stepper, Inc. Laser thermal processing apparatus and method
US20070069161A1 (en) * 2005-09-14 2007-03-29 Camm David M Repeatable heat-treating methods and apparatus

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US8005351B2 (en) 2011-08-23
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US20080273867A1 (en) 2008-11-06

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