CN101668880A - 连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法 - Google Patents
连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法 Download PDFInfo
- Publication number
- CN101668880A CN101668880A CN200880013501A CN200880013501A CN101668880A CN 101668880 A CN101668880 A CN 101668880A CN 200880013501 A CN200880013501 A CN 200880013501A CN 200880013501 A CN200880013501 A CN 200880013501A CN 101668880 A CN101668880 A CN 101668880A
- Authority
- CN
- China
- Prior art keywords
- film
- splicing ear
- palladium
- electroless plating
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 93
- 238000000034 method Methods 0.000 title claims description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 339
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 168
- 238000007747 plating Methods 0.000 claims abstract description 168
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 141
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 127
- 229910052737 gold Inorganic materials 0.000 claims abstract description 117
- 239000010931 gold Substances 0.000 claims abstract description 117
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 71
- 238000007654 immersion Methods 0.000 claims abstract description 68
- 239000004020 conductor Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 157
- 238000007772 electroless plating Methods 0.000 claims description 135
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 85
- 239000010949 copper Substances 0.000 claims description 79
- 229910052802 copper Inorganic materials 0.000 claims description 77
- 238000005476 soldering Methods 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000006073 displacement reaction Methods 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 15
- 239000011574 phosphorus Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 285
- 239000010410 layer Substances 0.000 description 174
- 238000009825 accumulation Methods 0.000 description 58
- 239000000243 solution Substances 0.000 description 53
- 229920005989 resin Polymers 0.000 description 49
- 239000011347 resin Substances 0.000 description 49
- 239000011248 coating agent Substances 0.000 description 40
- 238000000576 coating method Methods 0.000 description 40
- -1 Hypophosporous Acid Chemical class 0.000 description 31
- 150000001875 compounds Chemical class 0.000 description 30
- 229910000679 solder Inorganic materials 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000003795 chemical substances by application Substances 0.000 description 25
- 238000009413 insulation Methods 0.000 description 24
- 230000002829 reductive effect Effects 0.000 description 24
- 241000446313 Lamella Species 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 21
- 239000002585 base Substances 0.000 description 21
- 239000011135 tin Substances 0.000 description 20
- 229910052718 tin Inorganic materials 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 238000005260 corrosion Methods 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 15
- 239000011148 porous material Substances 0.000 description 14
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 239000002253 acid Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000003112 inhibitor Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 10
- 238000010030 laminating Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000013007 heat curing Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910002808 Si–O–Si Inorganic materials 0.000 description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 238000007598 dipping method Methods 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910001096 P alloy Inorganic materials 0.000 description 6
- 239000003637 basic solution Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011941 photocatalyst Substances 0.000 description 6
- 239000006089 photosensitive glass Substances 0.000 description 6
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 239000003929 acidic solution Substances 0.000 description 5
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000011133 lead Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 238000005868 electrolysis reaction Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 235000019253 formic acid Nutrition 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- 238000005649 metathesis reaction Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229960003280 cupric chloride Drugs 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 2
- VEUMBMHMMCOFAG-UHFFFAOYSA-N 2,3-dihydrooxadiazole Chemical compound N1NC=CO1 VEUMBMHMMCOFAG-UHFFFAOYSA-N 0.000 description 2
- SYOANZBNGDEJFH-UHFFFAOYSA-N 2,5-dihydro-1h-triazole Chemical compound C1NNN=C1 SYOANZBNGDEJFH-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- ICSNLGPSRYBMBD-UHFFFAOYSA-N 2-aminopyridine Chemical compound NC1=CC=CC=N1 ICSNLGPSRYBMBD-UHFFFAOYSA-N 0.000 description 2
- DXYYSGDWQCSKKO-UHFFFAOYSA-N 2-methylbenzothiazole Chemical compound C1=CC=C2SC(C)=NC2=C1 DXYYSGDWQCSKKO-UHFFFAOYSA-N 0.000 description 2
- RVBUGGBMJDPOST-UHFFFAOYSA-N 2-thiobarbituric acid Chemical compound O=C1CC(=O)NC(=S)N1 RVBUGGBMJDPOST-UHFFFAOYSA-N 0.000 description 2
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical compound N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- LRFVTYWOQMYALW-UHFFFAOYSA-N 9H-xanthine Chemical compound O=C1NC(=O)NC2=C1NC=N2 LRFVTYWOQMYALW-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 239000004693 Polybenzimidazole Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 2
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 description 2
- 239000006035 Tryptophane Substances 0.000 description 2
- 229920001807 Urea-formaldehyde Polymers 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- GZCGUPFRVQAUEE-SLPGGIOYSA-N aldehydo-D-glucose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C=O GZCGUPFRVQAUEE-SLPGGIOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 229960002319 barbital Drugs 0.000 description 2
- FTOAOBMCPZCFFF-UHFFFAOYSA-N barbitone sodium Natural products CCC1(CC)C(=O)NC(=O)NC1=O FTOAOBMCPZCFFF-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 2
- RYYVLZVUVIJVGH-UHFFFAOYSA-N caffeine Chemical compound CN1C(=O)N(C)C(=O)C2=C1N=CN2C RYYVLZVUVIJVGH-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229960004643 cupric oxide Drugs 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- QWJNFFYFEKXZBF-UHFFFAOYSA-N cyanocyanamide Chemical compound N#CNC#N QWJNFFYFEKXZBF-UHFFFAOYSA-N 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 2
- 229960002050 hydrofluoric acid Drugs 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- 229920002480 polybenzimidazole Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920006380 polyphenylene oxide Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 229940117820 purinethol Drugs 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- WHMDPDGBKYUEMW-UHFFFAOYSA-N pyridine-2-thiol Chemical compound SC1=CC=CC=N1 WHMDPDGBKYUEMW-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229920003987 resole Polymers 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 235000012222 talc Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- YAPQBXQYLJRXSA-UHFFFAOYSA-N theobromine Chemical compound CN1C(=O)NC(=O)C2=C1N=CN2C YAPQBXQYLJRXSA-UHFFFAOYSA-N 0.000 description 2
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N thiocyanic acid Chemical compound SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 2
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 2
- 125000000101 thioether group Chemical group 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 229960004799 tryptophan Drugs 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- 229930003231 vitamin Natural products 0.000 description 2
- 239000011782 vitamin Substances 0.000 description 2
- 229940088594 vitamin Drugs 0.000 description 2
- 235000013343 vitamin Nutrition 0.000 description 2
- 150000003722 vitamin derivatives Chemical class 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- JZTKNVMVUVSGJF-UHFFFAOYSA-N 1,2,3,5-oxatriazole Chemical compound C=1N=NON=1 JZTKNVMVUVSGJF-UHFFFAOYSA-N 0.000 description 1
- SWEICGMKXPNXNU-UHFFFAOYSA-N 1,2-dihydroindazol-3-one Chemical compound C1=CC=C2C(O)=NNC2=C1 SWEICGMKXPNXNU-UHFFFAOYSA-N 0.000 description 1
- XBYRMPXUBGMOJC-UHFFFAOYSA-N 1,2-dihydropyrazol-3-one Chemical compound OC=1C=CNN=1 XBYRMPXUBGMOJC-UHFFFAOYSA-N 0.000 description 1
- FKASFBLJDCHBNZ-UHFFFAOYSA-N 1,3,4-oxadiazole Chemical compound C1=NN=CO1 FKASFBLJDCHBNZ-UHFFFAOYSA-N 0.000 description 1
- JPBLHOJFMBOCAF-UHFFFAOYSA-N 1,3-benzoxazol-2-amine Chemical compound C1=CC=C2OC(N)=NC2=C1 JPBLHOJFMBOCAF-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- RAIPHJJURHTUIC-UHFFFAOYSA-N 1,3-thiazol-2-amine Chemical compound NC1=NC=CS1 RAIPHJJURHTUIC-UHFFFAOYSA-N 0.000 description 1
- JKMPXGJJRMOELF-UHFFFAOYSA-N 1,3-thiazole-2,4,5-tricarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)S1 JKMPXGJJRMOELF-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 1
- JVVRJMXHNUAPHW-UHFFFAOYSA-N 1h-pyrazol-5-amine Chemical compound NC=1C=CNN=1 JVVRJMXHNUAPHW-UHFFFAOYSA-N 0.000 description 1
- KXZSVYHFYHTNBI-UHFFFAOYSA-N 1h-quinoline-2-thione Chemical compound C1=CC=CC2=NC(S)=CC=C21 KXZSVYHFYHTNBI-UHFFFAOYSA-N 0.000 description 1
- KYNFOMQIXZUKRK-UHFFFAOYSA-N 2,2'-dithiodiethanol Chemical compound OCCSSCCO KYNFOMQIXZUKRK-UHFFFAOYSA-N 0.000 description 1
- SUYLOMATYCPVFT-UHFFFAOYSA-N 2,4,6-triaminophenol Chemical compound NC1=CC(N)=C(O)C(N)=C1 SUYLOMATYCPVFT-UHFFFAOYSA-N 0.000 description 1
- JTTIOYHBNXDJOD-UHFFFAOYSA-N 2,4,6-triaminopyrimidine Chemical compound NC1=CC(N)=NC(N)=N1 JTTIOYHBNXDJOD-UHFFFAOYSA-N 0.000 description 1
- SWELIMKTDYHAOY-UHFFFAOYSA-N 2,4-diamino-6-hydroxypyrimidine Chemical compound NC1=CC(=O)N=C(N)N1 SWELIMKTDYHAOY-UHFFFAOYSA-N 0.000 description 1
- RLFZYIUUQBHRNV-UHFFFAOYSA-N 2,5-dihydrooxadiazole Chemical compound C1ONN=C1 RLFZYIUUQBHRNV-UHFFFAOYSA-N 0.000 description 1
- IMSODMZESSGVBE-UHFFFAOYSA-N 2-Oxazoline Chemical compound C1CN=CO1 IMSODMZESSGVBE-UHFFFAOYSA-N 0.000 description 1
- KWXIPEYKZKIAKR-UHFFFAOYSA-N 2-amino-4-hydroxy-6-methylpyrimidine Chemical compound CC1=CC(O)=NC(N)=N1 KWXIPEYKZKIAKR-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- XBHOUXSGHYZCNH-UHFFFAOYSA-N 2-phenyl-1,3-benzothiazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2S1 XBHOUXSGHYZCNH-UHFFFAOYSA-N 0.000 description 1
- UGWULZWUXSCWPX-UHFFFAOYSA-N 2-sulfanylideneimidazolidin-4-one Chemical compound O=C1CNC(=S)N1 UGWULZWUXSCWPX-UHFFFAOYSA-N 0.000 description 1
- VMKYTRPNOVFCGZ-UHFFFAOYSA-N 2-sulfanylphenol Chemical compound OC1=CC=CC=C1S VMKYTRPNOVFCGZ-UHFFFAOYSA-N 0.000 description 1
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 1
- QMEQBOSUJUOXMX-UHFFFAOYSA-N 2h-oxadiazine Chemical compound N1OC=CC=N1 QMEQBOSUJUOXMX-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- YYFLDZZDOUDZQM-UHFFFAOYSA-N 3-[1-[[4-(3-phenylquinolin-2-yl)phenyl]methyl]piperidin-4-yl]-1h-benzimidazol-2-one Chemical compound O=C1NC2=CC=CC=C2N1C(CC1)CCN1CC(C=C1)=CC=C1C1=NC2=CC=CC=C2C=C1C1=CC=CC=C1 YYFLDZZDOUDZQM-UHFFFAOYSA-N 0.000 description 1
- KUERBWLVQJAKIS-UHFFFAOYSA-N 3-hydroxy-1h-imidazol-2-one Chemical class ON1C=CNC1=O KUERBWLVQJAKIS-UHFFFAOYSA-N 0.000 description 1
- AFPHTEQTJZKQAQ-UHFFFAOYSA-N 3-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1 AFPHTEQTJZKQAQ-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- GRIATXVEXOFBGO-UHFFFAOYSA-N 4-methyl-1,3-benzothiazol-2-amine Chemical compound CC1=CC=CC2=C1N=C(N)S2 GRIATXVEXOFBGO-UHFFFAOYSA-N 0.000 description 1
- OUQMXTJYCAJLGO-UHFFFAOYSA-N 4-methyl-1,3-thiazol-2-amine Chemical compound CC1=CSC(N)=N1 OUQMXTJYCAJLGO-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-O 4-methyl-1h-tetrazol-1-ium-5-thione Chemical compound CN1NN=[NH+]C1=S XOHZHMUQBFJTNH-UHFFFAOYSA-O 0.000 description 1
- KRVHFFQFZQSNLB-UHFFFAOYSA-N 4-phenylbenzenethiol Chemical group C1=CC(S)=CC=C1C1=CC=CC=C1 KRVHFFQFZQSNLB-UHFFFAOYSA-N 0.000 description 1
- FKPXGNGUVSHWQQ-UHFFFAOYSA-N 5-methyl-1,2-oxazol-3-amine Chemical compound CC1=CC(N)=NO1 FKPXGNGUVSHWQQ-UHFFFAOYSA-N 0.000 description 1
- YEGKYFQLKYGHAR-UHFFFAOYSA-N 6-methylthioguanine Chemical compound CSC1=NC(N)=NC2=C1NC=N2 YEGKYFQLKYGHAR-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004160 Ammonium persulphate Substances 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- RSYIDTSXMAITAV-UHFFFAOYSA-N C1=CC=C2C(=C1)C(C(=O)O2)S(=O)(=O)O Chemical compound C1=CC=C2C(=C1)C(C(=O)O2)S(=O)(=O)O RSYIDTSXMAITAV-UHFFFAOYSA-N 0.000 description 1
- 241001111317 Chondrodendron tomentosum Species 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- LPHGQDQBBGAPDZ-UHFFFAOYSA-N Isocaffeine Natural products CN1C(=O)N(C)C(=O)C2=C1N(C)C=N2 LPHGQDQBBGAPDZ-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000004414 alkyl thio group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000003927 aminopyridines Chemical class 0.000 description 1
- 235000019395 ammonium persulphate Nutrition 0.000 description 1
- 150000008064 anhydrides Chemical group 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- HZUJFPFEXQTAEL-UHFFFAOYSA-N azanylidynenickel Chemical compound [N].[Ni] HZUJFPFEXQTAEL-UHFFFAOYSA-N 0.000 description 1
- 229910052728 basic metal Inorganic materials 0.000 description 1
- 150000003818 basic metals Chemical class 0.000 description 1
- RUOKPLVTMFHRJE-UHFFFAOYSA-N benzene-1,2,3-triamine Chemical compound NC1=CC=CC(N)=C1N RUOKPLVTMFHRJE-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 229960001948 caffeine Drugs 0.000 description 1
- VJEONQKOZGKCAK-UHFFFAOYSA-N caffeine Natural products CN1C(=O)N(C)C(=O)C2=C1C=CN2C VJEONQKOZGKCAK-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- FRZDLTCXOSFHJC-UHFFFAOYSA-N chromene-2-thione Chemical compound C1=CC=C2OC(=S)C=CC2=C1 FRZDLTCXOSFHJC-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 239000012787 coverlay film Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ALVPFGSHPUPROW-UHFFFAOYSA-N di-n-propyl disulfide Natural products CCCSSCCC ALVPFGSHPUPROW-UHFFFAOYSA-N 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- KPVWDKBJLIDKEP-UHFFFAOYSA-L dihydroxy(dioxo)chromium;sulfuric acid Chemical compound OS(O)(=O)=O.O[Cr](O)(=O)=O KPVWDKBJLIDKEP-UHFFFAOYSA-L 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003974 emollient agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009998 heat setting Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 150000002473 indoazoles Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- GLVAUDGFNGKCSF-UHFFFAOYSA-N mercaptopurine Chemical compound S=C1NC=NC2=C1NC=N2 GLVAUDGFNGKCSF-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- SEXOVMIIVBKGGM-UHFFFAOYSA-N naphthalene-1-thiol Chemical compound C1=CC=C2C(S)=CC=CC2=C1 SEXOVMIIVBKGGM-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- CQDAMYNQINDRQC-UHFFFAOYSA-N oxatriazole Chemical class C1=NN=NO1 CQDAMYNQINDRQC-UHFFFAOYSA-N 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- 125000005968 oxazolinyl group Chemical group 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003212 purines Chemical class 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical compound O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- LJXQPZWIHJMPQQ-UHFFFAOYSA-N pyrimidin-2-amine Chemical compound NC1=NC=CC=N1 LJXQPZWIHJMPQQ-UHFFFAOYSA-N 0.000 description 1
- VTGOHKSTWXHQJK-UHFFFAOYSA-N pyrimidin-2-ol Chemical compound OC1=NC=CC=N1 VTGOHKSTWXHQJK-UHFFFAOYSA-N 0.000 description 1
- OYRRZWATULMEPF-UHFFFAOYSA-N pyrimidin-4-amine Chemical compound NC1=CC=NC=N1 OYRRZWATULMEPF-UHFFFAOYSA-N 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- HBCQSNAFLVXVAY-UHFFFAOYSA-N pyrimidine-2-thiol Chemical compound SC1=NC=CC=N1 HBCQSNAFLVXVAY-UHFFFAOYSA-N 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000011378 shotcrete Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- DIORMHZUUKOISG-UHFFFAOYSA-N sulfoformic acid Chemical compound OC(=O)S(O)(=O)=O DIORMHZUUKOISG-UHFFFAOYSA-N 0.000 description 1
- 125000003831 tetrazolyl group Chemical group 0.000 description 1
- 229960004559 theobromine Drugs 0.000 description 1
- 229960000278 theophylline Drugs 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 150000007979 thiazole derivatives Chemical class 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- MDYPJPPXVOPUNX-UHFFFAOYSA-N thiochromen-2-one Chemical compound C1=CC=C2SC(=O)C=CC2=C1 MDYPJPPXVOPUNX-UHFFFAOYSA-N 0.000 description 1
- CWERGRDVMFNCDR-UHFFFAOYSA-M thioglycolate(1-) Chemical compound [O-]C(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- GYICYQJEVCIYJY-UHFFFAOYSA-N thiophen-1-ylidenemethanone Chemical compound O=C=S1C=CC=C1 GYICYQJEVCIYJY-UHFFFAOYSA-N 0.000 description 1
- GLQWRXYOTXRDNH-UHFFFAOYSA-N thiophen-2-amine Chemical compound NC1=CC=CS1 GLQWRXYOTXRDNH-UHFFFAOYSA-N 0.000 description 1
- RWWAVVZIQWYEEU-UHFFFAOYSA-N thiophen-2-ylmethanesulfonic acid Chemical compound OS(=O)(=O)CC1=CC=CS1 RWWAVVZIQWYEEU-UHFFFAOYSA-N 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 229940103494 thiosalicylic acid Drugs 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229940116269 uric acid Drugs 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000010938 white gold Substances 0.000 description 1
- 229910000832 white gold Inorganic materials 0.000 description 1
- 229940075420 xanthine Drugs 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/3205—Shape
- H01L2224/32057—Shape in side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01007—Nitrogen [N]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01031—Gallium [Ga]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01041—Niobium [Nb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01044—Ruthenium [Ru]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01088—Radium [Ra]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0133—Ternary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/073—Displacement plating, substitution plating or immersion plating, e.g. for finish plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Chemically Coating (AREA)
- Wire Bonding (AREA)
Abstract
本发明改善具有置换镀金膜的连接端子的连接可靠性。一种连接端子,具有:导体层;非电解镀镍膜;第一镀钯膜,其是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜;第二镀钯膜,其是纯度为90质量%以上且小于99质量%的非电解镀钯膜;置换镀金膜,其中,非电解镀镍膜、第一镀钯膜、第二镀钯膜及置换镀金膜依次层叠在导体层的一面侧,置换镀金膜位于与导体层相反侧的最表层。
Description
技术领域
本发明涉及连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法。
背景技术
近年来,无论计算机、移动电话、无线基地电台、光通信装置、服务器及路由器等的大小如何,正在向设备的小型化、轻量化、高性能化及高功能化进展。另外,在CPU、DSP及各种存储器等LSI的高速化及高功能化的同时,还进行片上系统(Soc;system on chip)或系统级封装(SiP;system in)等高密度安装技术的开发。
因此,半导体芯片搭载用基板或母板使用累积(built up)方式的多层布线基板。另外,由于所谓封装件的多销窄间距化的安装技术的进步,印刷电路布线板从QFP(Quad Flat Package)向BGA(Ball Grid Array)/CSP(Chip Size Package)安装进化。
在半导体芯片搭载用基板和半导体芯片的连接中例如使用金引线接合。另外,具有相互连接的半导体芯片搭载用基板和半导体芯片的半导体封装件利用焊锡球与布线板(母板)连接。半导体芯片搭载用基板通常分别具有与半导体芯片或布线板连接的连接端子。为了确保与金引线或焊锡的良好的金属接合,对这些连接端子实施镀金的情况居多。
以往,作为对连接端子实施镀金的方法,广泛应用了电解镀金。但是,伴随半导体封装件的小型化引起的布线的高密度化,一直以来难以在连接端子表面确保用于实施电解镀金的布线。因此,不需要特别的布线的非电解镀镍工序开始受到了瞩目,例如,在专利文献1中,提出了对在包括铜的电路上实施非电解镀镍后,在其上实施非电解镀金的方法。还有,在此所述的非电解镀金是指“置换镀敷”或“置换镀敷及非电解镀敷(在镀敷液中具有还原剂的还原型涂敷)”。
另一方面,在专利文献2中,探讨了如下技术,即:在形成了非电解镀镍膜后形成置换或非电解镀金膜的情况下,由于镀敷后的加热处理导致金属端子和金引线的引线接合强度降低,因此,在端子形状的铜的表面依次形成非电解镀镍膜、非电解镀钯膜、置换镀金膜及非电解镀金膜。在非专利文献1中报告了使用以次磷酸或亚磷酸为还原剂的非电解钯镀敷液,将非电解镀钯膜制作为含有磷的非电解镀钯-磷膜,通过非电解镀镍、非电解镀钯-磷及镀金来构成的镀敷膜。
专利文献1:日本特开平5-343834号公报
专利文献2:日本特许第3596335号公报
专利文献3:表面技术;58,35(2007)
若在形成了非电解镀镍膜后形成置换镀金膜,则非电解镀镍膜由于置换镀金液而容易腐蚀。若非电解镀镍膜腐蚀,则连接端子和金引线等的连接强度降低,难以得到充分的连接可靠性。通过在非电解镀镍膜和置换镀金膜之间形成置换镀钯膜或非电解镀钯-磷膜,能够抑制非电解镀镍膜的腐蚀。
但是,本发明人等通过深入研究,发现了以下的事实。即,在非电解镀镍膜的表面形成非电解镀钯-磷合金膜的情况下,若使用将次磷酸或亚磷酸作为还原剂的非电解钯镀敷液,则具有钯或磷难以析出的倾向,会导致难以均一地形成非电解镀钯-磷合金膜。尤其,在对多个独立的端子一并形成非电解镀钯-磷合金膜时,所有端子均不能以均一厚度析出,容易产生不形成非电解镀钯-磷合金膜的端子或敷膜的厚度薄的端子。该现象具有端子的面积越小越容易显现的倾向。其结果,镀钯-磷合金膜不能作为非电解镀镍膜的保护层而发挥功能,因此,连接端子和金引线的连接强度降低。
这样,以往,就得到具有置换或非电解镀金膜的连接端子的充分的连接可靠性来说,实际上非常困难。
发明内容
因此,本发明的目的在于改善具有置换镀金膜的连接端子的充分的连接可靠性。
本发明所述的连接端子,具有:导体层;非电解镀镍膜;第一镀钯膜,其是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜;第二镀钯膜,其是纯度为90质量%以上且小于99质量%的非电解镀钯膜;和置换镀金膜,其中,所述非电解镀镍膜、第一镀钯膜、第二镀钯膜及置换镀金膜依次层叠在导体层的一面侧,置换镀金膜位于与导体层相反侧的最表层。
就纯度为99质量%以上的第一镀钯膜来说,可使用活性高的镀敷液使其在导体层上均一地析出。还有,由于以所述第一镀钯膜作为基底,因而例如,可以使用含有次磷酸或亚磷酸作为还原剂的活性比较低的镀敷液,将纯度为90质量%以上且小于99质量%的第二镀钯膜在多个端子一并均一地形成。通过这样以均一的厚度形成镀钯膜,可抑制由于向置换镀金液的浸渍而引起的非电解镀镍膜的腐蚀。其结果,可改善具有置换镀金膜的连接端子的连接可靠性。
若在置换镀金膜上进一步涂敷非电解镀金膜,则可得到更加显著的连接可靠性提高的效果。但是,在置换镀金膜及非电解镀金膜的膜厚之和小于0.005μm时,由于具有钎焊可靠性降低的倾向,因此,优选置换镀金膜及非电解镀金膜的膜厚之和为0.005μm以上。
在非电解镀金膜未层叠于置换镀金膜上的情况下,优选置换镀金膜单独的膜厚为0.005μm以上。
优选该连接端子使用钎焊连接用连接端子。
根据本发明的连接端子,能够得到与焊锡的充分的连接强度。因此,本发明的连接端子作为钎焊用端子尤其有用。
另外,优选该连接端子为引线接合用连接端子。
本发明的连接端子还具有:层叠于置换镀金膜上的非电解镀金膜,并且非电解镀金膜位于与导体层相反侧的最表层,由此,除了焊锡之外,金引线等金属线也能够得到充分的连接强度,从而可用作钎焊用连接端子或引线接合用连接端子。
优选第二镀钯膜为镀钯-磷膜。
镀钯-磷膜可以由含有次磷酸或亚磷酸等含磷化合物作为还原剂且活性低但常用的镀敷液形成。通过形成纯度为99质量%以上的镀钯膜作为第二镀钯膜的基底,能够均一地形成镀钯-磷膜。
优选第一镀钯膜的膜厚为0.4μm以下,第二镀钯膜的膜厚为0.03~0.3μm,第一镀钯膜及第二镀钯膜的膜厚之和为0.03~0.5μm。
即使将第一镀钯膜的膜厚设定比0.4μm厚,也不能特别地得到连接端子和金引线及焊锡的连接强度的进一步的提高,另外,形成厚的敷膜也在经济上不利。通过第二镀钯膜的膜厚为0.03μm以上,能够更充分地得到引线接合性及钎焊可靠性的提高效果。另外,即使将第二镀钯膜的膜厚增加为比0.3μm厚,也不能特别地得到连接端子和金引线及焊锡的连接强度的进一步提高,另外,形成厚的敷膜也在经济上不利。通过第二镀钯膜的膜厚为0.03μm以上,能够更充分地得到引线接合性及钎焊可靠性的提高效果。
优选非电解镀镍膜的纯度为80质量%以上。非电解镀镍膜的膜厚优选为0.1~20μm。
在非电解镀镍膜的纯度小于80质量%的情况下,处于连接可靠性的提高效果变小的倾向。即使将非电解镀镍膜的膜厚减小为比0.1μm薄,也处于连接可靠性的提高效果变小的倾向。另外,即使将非电解镀镍膜的膜厚增加为比20μm厚,也难以得到连接可靠性的进一步的提高,在经济上也不利。
优选导体层包含选自由铜、钨、钼及铝构成的组中的至少一种金属。
本发明的半导体封装件,具有:基板;形成于该基板上的布线;连接端子,其为上述本发明的连接端子,其中将所述布线的一部分作为导体层;半导体芯片,其以与连接端子电连接的方式搭载于基板。
本发明的半导体封装件的制造方法,包括:在形成于基板上的导体层的一部分的表面上依次形成非电解镀镍膜、第一镀钯膜、第二镀钯膜及置换镀金膜,所述第一镀钯膜是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜,所述第二镀钯膜是纯度为90质量%以上且小于99质量%的非电解镀钯膜,由此形成具有导体层的一部分、第一镀钯膜、第二镀钯膜、及置换镀金膜的连接端子的工序;将半导体芯片以与连接端子电连接的方式搭载于所述基板的工序。
在形成具有上述各镀敷膜的连接端子的工序中,能够在上述置换镀金膜上进一步层叠非电解镀金膜。
根据本发明的制造方法,能够制造连接可靠性优越的半导体封装件。另外,在连接端子的形成工序中,若在置换镀金膜上进而层叠非电解镀金膜,则能够制造尤其金引线等金属线也具有充分的连接强度的半导体封装件。
根据本发明,能够改善具有置换镀金膜的连接端子的连接可靠性。更具体来说,提高金引线及/或焊锡与连接端子的连接强度。
附图说明
图1(a)是从第一主面侧示出具有连接端子的半导体芯片搭载用基板的一实施方式的示意俯视图,(b)是沿(a)的b-b线的剖面图,(c)是沿(a)的c-c线的剖面图。
图2是表示半导体芯片搭载用基板的一实施方式的示意剖面图。
图3是表示半导体芯片搭载用基板的其他实施方式的示意剖面图。
图4是表示半导体芯片搭载用基板的一实施方式(风扇-内置类型)的示意俯视图。
图5是表示半导体芯片搭载用基板的一实施方式(风扇-外置类型)的示意俯视图。
图6是表示半导体芯片搭载用基板的制造方法的一实施方式的示意剖面图。
图7是表示半导体封装件的一实施方式的示意剖面图。
图8是表示半导体封装件的其他实施方式的示意剖面图。
图9(a)是表示以行及列排列多个半导体封装件区域的半导体芯片搭载基板的一实施方式的示意剖面图,(b)是区域A的放大图。
图中:1a、2a、3a、4a、5a、6g-半导体芯片搭载用基板;2-导体层;3-非电解镀镍膜;4-第一镀钯膜;5-第二镀钯膜;6-置换镀金膜;6a、6b、6c、6d、6e、6f-半导体芯片搭载用基板的制造过程的结构体;7a-引线接合类型半导体封装件;8a-倒装晶片类型半导体封装件;9a-半导体芯片搭载基板;11-定位标记;13-半导体封装件区域;14-小片接合薄膜粘接区域(倒装晶片类型);15-半导体芯片搭载区域(倒装晶片类型);17-小片接合薄膜粘接区域(引线接合类型);18-半导体芯片搭载区域(引线接合类型);22-半导体芯片搭载基板的布线板;23-组件;24-加强图案;25-切断位置对齐标记;40-展开布线;50-印刷电路布线板;60-镀敷层;100-芯基板;102-第一层间连接用IVH;103-第二层间连接端子;104-累积层;104a-第一累积层;104b-第二累积层;105-第三层间连接用IVH;106a-第一布线;106b-第二布线;106c-第三布线;108a-第二层间连接用IVH用贯通孔;108b-第二层间连接用IVH;109-绝缘层;109a-开口部;110-引线接合用连接端子;111-钎焊用连接端子;112-第三层间连接端子;113-欠装部件;114-焊锡球;115-金引线;116-半导体用密封树脂;117-小片接合薄膜;118-绝缘层;118a-开口部;119-连接凸块;120-半导体芯片。
具体实施方式
以下,根据情况,参照附图,说明本发明的适当的实施方式。还有,在附图的说明中,对于相同或相同的要件,标注相同的符号,省略重复的说明。
(半导体芯片搭载用基板)
图1是表示半导体芯片搭载基板的一实施方式的俯视图或剖面图。图1(a)是从第一主面侧示出半导体芯片搭载用基板的俯视图。图1(b)是沿图1(a)的b-b线的剖面图。图1(c)是沿图1(a)的c-c线的剖面图。图1所示的半导体芯片搭载用基板1a具有:印刷电路布线板50;在作为构成印刷电路布线板50的绝缘层的芯基板100的一表面设置的钎焊用连接端子111及绝缘层109。印刷电路布线板50具有:具有在芯基板100的其他表面上设置的开口部118a的绝缘层118;配置于开口部118a内的多个引线接合用连接端子110;和展开布线40。
多个引线接合用连接端子110作为用于将半导体芯片搭载用基板1a与半导体芯片电连接的半导体芯片连接端子而发挥功能。多个钎焊用连接端子111作为用于将半导体芯片搭载用基板1a与布线板(母板)电连接的外部连接端子而发挥功能。引线接合用连接端子110和钎焊用连接端子111利用展开布线40来相互电连接。还有,印刷电路布线板50可以为多层印刷电路布线板。
图1(b)是图1(a)中的半导体芯片搭载用基板1a的引线接合用连接端子110及基于它们的周边部的b-b线的剖面图。引线接合用连接端子110具有:设置于芯基板100的第一主面上的导体层2;层叠于导体层2上的镀敷层60。镀敷层60依次具有:非电解镀镍膜3;纯度为99质量%以上的第一镀钯膜4;纯度为90质量%以上且小于99质量%的第二镀钯膜5;和置换镀金膜6。多个导体层2可以为展开布线40的一部分。
图1(c)是基于图1(a)中的半导体芯片搭载用基板1a的c-c线的钎焊用连接端子111及它们的周边部的剖面图。钎焊用连接端子111具有:设置于芯基板100的第二主面上的导体层2;层叠于导体层2上的镀敷层60。镀敷层60依次具有:非电解镀镍膜3;纯度为99质量%以上的第一镀钯膜4;纯度为90质量%以上且小于99质量%的第二镀钯膜5;和置换镀金膜6。多个导体层2如上所述,可以为展开布线40的一部分。
导体层2含有:钨、钼及铝及含有它们的合金。非电解镀镍膜3通过利用还原剂将镀敷液中的镍离子还原为镍,使其析出在被活性化的导体层2的表面而形成。从而,导体层2只要是在所述金属或合金的表面能够形成非电解镀镍膜3,就可以为任一种金属及合金。还有,通常对导体层进行非电解镀镍之前,向导体层的表面赋予催化剂(例如钯催化剂)。
作为非电解镀镍膜3,可以举出含有形成非电解镀镍膜的还原剂引起的元素即磷、硼、氮等的非电解镍-磷合镀金膜、非电解镍-硼合镀金膜、非电解镍-氮合镀金膜等。非电解镀镍膜3的纯度(镍的含有比例)优选80质量%以上,更优选90质量%以上。另外,非电解镀镍膜3的膜厚优选0.1μm~20μm,更优选0.5μm~10μm。
通过置换钯镀敷、或非电解钯镀敷来形成钯的纯度为99质量%以上的第一镀钯膜4。通过与在导体层2的最表层层叠的非电解镀镍膜3的置换反应来形成上述置换镀钯膜。在镀镍膜3置换析出的情况下,钯以外的构成元素没有特别的限制。另外,上述非电解镀钯膜是镀敷液中的钯离子是在还原剂的作用下在非电解镍敷膜3的表面作为钯析出的。纯度为99质量%以上的第一镀钯膜4优选由使用了蚁酸化合物作为还原剂的非电解钯镀敷来形成。通过使用蚁酸化合物,能够使高纯度的镀敷膜特别容易地均一析出。纯度越接近100质量%,钯的析出形态的均一性越优越。
第一镀钯膜4的膜厚优选0.4μm以下,更优选0.001μm~0.4μm,进而优选0.01μm~0.2μm,尤其优选0.03μm~0.1μm。若第一镀钯膜4的膜厚小于0.001μm,则存在难以使第二镀钯膜5均一地析出于所有的端子的倾向。
可以通过利用将活性比蚁酸低的次磷酸或亚磷酸等用作还原剂的非电解钯镀敷来适当地形成钯的纯度为90质量%以上且小于99质量%的第二镀钯膜5。
通常,使用含有次磷酸及亚磷酸等含磷化合物或含硼化合物作为还原剂的镀敷液来形成第二镀钯膜5。使用这些镀敷液,分别形成镀钯-磷合金敷膜或钯-硼合金敷膜。将镀敷液中的还原剂的浓度、pH、浴温度等调节为钯的纯度成为90质量%以上~小于99质量%。具体来说,例如,使用次磷酸作为还原剂的情况下,在0.005~0.3摩尔/l、pH7.5~11.5、温度40~80℃的范围内,能够形成钯的纯度为90质量%以上且小于99质量%的镀钯膜5。
第二镀钯膜5的膜厚优选0.03μm~0.5μm,更优选0.04μm~0.3μm,尤其优选0.06μm~0.2μm。
第一镀钯膜4和第二镀钯膜5的膜厚之和优选0.03~0.5μm,更优选0.04~0.3μm,尤其优选0.06~0.2μm。
置换镀金膜6通过作为基底的第二镀钯膜5和溶液中的金离子的置换反应来形成于第二镀钯膜5的表面。只要钯和金离子置换,对镀敷液没有特别限定,但优选含有氰基化合物。
具有上述导体层2、非电解镀镍膜3、纯度为99质量%以上的第一镀钯膜4、纯度为90质量%以上且小于99质量%的第二镀钯膜5和置换镀金膜6的连接端子即钎焊用连接端子111的钎焊可靠性优越。
另外,未图示,但优选在置换镀金膜6的表面进一步层叠非电解镀金膜。非电解镀金膜是还原型的非电解镀金膜。通过进行非电解镀金,能够调节镀金膜的膜厚,使引线接合用连接端子110的引线接合连接可靠性提高。
非电解镀金膜的纯度优选99质量%以上,更优选99.5质量%以上。若非电解镀金膜的纯度小于99质量%,则与99质量%以上的情况相比,处于引线接合性及钎焊可靠性降低的倾向。非电解镀金膜还可以使用置换还原型的镀金液(是在镀敷液中具有还原剂的置换镀金液,与非电解镀金相同地,与通常的置换镀金相比,能够增加厚度)。
置换镀金膜6和非电解镀金膜的厚度之和从引线接合性的观点来说,优选0.04μm~3μm,更优选0.06μm~1μm,进而优选0.1μm~0.5μm。在置换镀金膜6和非电解镀金膜的厚度之和为0.04μm以上的情况下,引线接合性尤其良好。在置换镀金膜6和非电解镀金膜的厚度之和大于3μm的情况下,与3μm以下的情况相比,不能特别地得到效果的提高,另外,不经济。从钎焊可靠性的观点来说,仅为置换镀金膜也可,但从引线接合性的观点来说,进而优选进行非电解镀金。置换镀金膜和非电解镀金膜的厚度之和从钎焊可靠性的观点来说,优选0.005μm~3μm,更优选0.01μm~0.5μm,尤其优选0.04μm~0.2μm。通过置换镀金膜和非电解镀金膜的厚度之和设为0.005μm以上,能够更充分地得到钎焊可靠性。在置换镀金膜和非电解镀金膜的厚度之和小于3μm的情况下,与3μm以下的情况相比,不能特别地得到效果的提高,另外,不经济。
还有,在置换镀金膜6上不具有非电解镀金膜的情况下,从钎焊可靠性的观点来说,优选置换镀金膜6单独的厚度为0.005μm以上。
引线接合用连接端子110例如经由导体金属线与在半导体芯片搭载用基板上搭载的半导体芯片连接。钎焊用连接端子111例如经由焊锡球与布线板(母板)连接。
在引线接合用连接端子110和半导体芯片的连接中使用的导体金属线优选金引线。
在钎焊用端子111、和布线板(母板)的连接中使用的焊锡可以使用焊锡球用焊锡、用于在表面安装用电子部件或布线板中的焊锡、用于在半导体芯片上的焊锡、焊锡凸块用焊锡等任意焊锡。焊锡的形状例如可以为球状、半球状、立方体状、长方体状、或突起状等。还可以使用60%的锡和40%的铅的共晶焊锡、不含有铅的锡、或含有银、铜、锌、铋、锗、钯、镍及铟中一个元素以上的锡合金。具体来说,可以使用Sn-3.0Ag-0.5Cu。
图2及图3是表示半导体芯片搭载用基板的一实施方式的示意剖面图。在图2的实施方式中,在芯基板的一侧形成有累积层,在图3的实施方式中,在芯基板的两侧形成有累积层。以下,以图2的实施方式为中心详细地说明。
图2所示的半导体芯片搭载用基板2a具有:作为绝缘层的芯基板100;在芯基板100的一面上形成的第一布线106a;在芯基板100的另一面上层叠的多个累积层104a、104b;在位于最外层的累积层104b的与芯基板100的相反侧的面上形成的钎焊连接用连接端子111。第一布线106a具有引线接合用连接端子110。钎焊用连接端子111与母板连接。如图3的实施方式一样,在第一布线106a侧也形成了累积层的情况下,连接端子110作为第一层间连接端子而发挥功能。
在芯基板100的与第一布线106a的相反侧的面上形成有包含第二层间连接端子103的第二布线106b。引线接合用连接端子110和第二层间连接端子103经由贯通芯基板100的第一层间连接用IVH(通孔)102电连接。在芯基板的第二布线106b侧依次层叠有累积层104a、及累积层104b。在累积层104a的与芯基板100相反侧的面上形成有包含第三层间连接端子112的第三布线106c。第二层间连接端子103和第三层间连接端子112经由第二层间连接用IVH108b电连接。
在最外层的累积层104b的与芯基板100相反侧的面上设置有钎焊用连接端子111及阻焊剂等的绝缘层109。在绝缘层109形成有钎焊用连接端子111露出的开口。钎焊用连接端子111和第二层间连接端子112经由第三层间连接用IVH105连接。
布线的形状或各自的连接端子的配置等不特别限定,可以根据搭载的半导体芯片或作为目的半导体封装件来适当地设计。
芯基板100的材质无特别限定,可以使用有机基材、陶瓷基材、硅基材、玻璃基材等。从热膨胀系数及绝缘性的观点来说,优选使用陶瓷基材或玻璃基材。
作为玻璃中非感光性玻璃,可以举出钠玻璃(成分例:SiO2 65~75质量%、Al2O3 0.5~4质量%、CaO 5~15质量%、MgO 0.5~4质量%、Na2O10~20质量%)、硼硅酸玻璃(成分例:SiO2 65~75质量%、B2O3 5~25质量%、Al2O3 1~5质量%、CaO 5~8质量%、MgO 0.5~2质量%、Na2O0.6~14质量%、K2O 1~6质量%)等。另外,作为感光性玻璃,可以举出在Li2O-SiO2系结晶化玻璃中含有作为感光剂的金离子及银离子的感光性玻璃。
作为有机基板,可以使用层叠了树脂浸渗于玻璃布的材料的基板或树脂薄膜。作为使用的树脂,可以举出热固化性树脂、热塑性树脂、或它们的混合物。其中优选将热固化性的有机绝缘材料作为主成分含有的树脂。作为热固化性树脂,可以使用酚醛树脂、尿醛树脂、蜜胺树脂、醇酸树脂、丙烯酸树脂、不饱和聚酯树脂、二烯丙基酞酸酯树脂、环氧树脂、聚苯并咪唑树脂、聚酰胺树脂、聚酰胺酰亚胺树脂、硅酮树脂、由环戊二烯合成的树脂、含有三(2-羟基乙基)异三聚氰酸酯的树脂、由芳香族腈合成的树脂、三聚化芳香族二氰基酰胺树脂、含有三烯丙基三甲基丙烯酸酯的树脂、呋喃树脂、酮树脂、二甲苯树脂、含有缩合多环芳香族的热固化性树脂、苯并环丁烯树脂等。作为热塑性树脂,可以举出聚酰亚胺树脂、聚苯醚树脂、聚苯硫醚树脂、芳族聚酰胺树脂、液晶聚合物等。
也可向这些树脂中添加填充材料。作为填充材料,可以举出硅石、滑石、氢氧化铝、硼酸铝、氮化铝、氧化铝等。
芯基板100的厚度从IVH形成性的观点来说,优选100~800μm,更优选150~500μm。
第一布线106a等布线的表面粗糙度为Ra,优选0.01μm~0.4μm。通过将膜厚为5nm以上且0.4μm以下的、包括选自铜、锡、铬、镍、锌、铝、钴、金、白金、银、钯的金属及含有这些金属的合金的金属连续或离散地涂敷于铜布线的表面,能够形成表面粗糙度为Ra且成为0.01μm~0.4μm的布线。作为优选的方式,铜、锡、铬、镍、锌、铝、钴及含有这些金属的合金涂敷于铜布线的表面的过程中或涂敷后,变换为氧化物、氢氧化物或这些的组合,由此在布线表层及布线中形成这些金属的氧化物及/或氢氧化物的层。除了上述金属以外,还可以使用钼、钛、钨、铅、铁、铟、铊、铋、钌、铑、镓、锗等金属,可以使用含有其中至少一种以上的合金。作为使这些金属类附着于布线表面的方法,可以举出非电解镀敷、电镀敷、置换反应、喷射喷雾、涂敷、喷射法、蒸镀法等。
在层间绝缘层(累积层)104a、104b中可以使用绝缘材料。作为绝缘材料,可以使用热固化性树脂、热塑性树脂或它们的混合物。其中,优选累积层含有固化性的有机绝缘材料作为主成分。作为热固化性树脂及热塑性树脂,可以使用上述树脂等。
也可向绝缘材料添加填充材料。作为填充材料,可以举出硅石、滑石、氢氧化铝、硼酸铝、氮化铝、氧化铝等。
优选在半导体封装件中,半导体芯片的热膨胀系数和芯基板的热膨胀系数近似,且芯基板的热膨胀系数和累积层的热膨胀系数近似,更优选在半导体芯片、芯基板、累积层的各自的热膨胀系数设为α1、α2、α3(ppm/℃)时,α1≤α2≤α3。
具体来说,芯基板的热膨胀系数α2优选7~13ppm/℃,更优选9~11ppm/℃。累积层的热膨胀系数α3优选10~40ppm/℃,更优选10~20ppm/℃,进而优选11~17ppm/℃。
累积层的杨氏模量从对热压的应力缓和的观点来说优选1~5GPa。优选适当地调节累积层中的填充材料的添加量,使热膨胀系数成为10~40ppm/℃,杨氏模量成为1~5GPa。
图4、5是表示半导体芯片搭载用基板的一实施方式的示意俯视图。图4所示的半导体芯片搭载用基板4a是在引线接合用连接端子110的内侧形成了钎焊用连接端子111的风扇-内置类型。图5所示的半导体芯片搭载用基板5a是在引线接合用连接端子110的外侧形成了钎焊用连接端子111的风扇-外置类型。半导体芯片搭载用基板可以为组合了风扇-内置类型及风扇-外置类型的类型。还有,引线接合用连接端子110的形状只要能够进行引线接合连接或倒装片连接等,就没有特别限定。
无论风扇-内置、风扇-外置的哪一个类型,均能够进行引线接合连接或倒装片连接等。图4、5中示出风扇-内置、风扇-外置的各自的类型中的引线接合连接时的半导体芯片搭载区域18、小片接合薄膜粘接区域17及倒装片连接时的半导体芯片搭载区域15、小片接合薄膜粘接区域14。进而,根据需要,形成如图5所示的与半导体芯片未电连接的虚设图案21也无妨。虚设图案的形状或配置也无特别限定,但优选在半导体芯片搭载区域18均一地配置。由此,在小片接合薄膜粘接区域17经由小片接合粘接剂搭载半导体芯片时,难以产生空隙,从而能够进一步提高引线接合连接中的连接可靠性。
(半导体芯片搭载用基板的制造方法)
以下,说明半导体芯片搭载用基板的制造方法的一实施方式。
图6(a)~(g)是表示半导体芯片搭载用基板的制造方法的一实施方式的示意剖面图。半导体芯片搭载用基板6g可以通过具有如下所述的工序的制造方法来得到,即:在芯基板100的第一主面上形成包含引线接合用连接端子110的工序(工序a);形成以与引线接合用连接端子110连接的方式贯通的第一层间连接用IVH102(以下称为“第一通孔”)的工序(工序b);在芯基板100的与第一布线106a相反侧的第二主面上形成包含第二层间连接端子103的第二布线106b的工序(工序c);在芯基板100的第二主面上形成第一累积层(层间绝缘层)104a的工序(工序d);形成贯通第一累积层104a的第二层间连接用IVH(通孔)108b用贯通孔108a的工序(工序e);在第二层间连接用IVH(通孔)108b、及第一累积层104a的与芯基板100相反侧的面上形成包含第三层间连接端子112的第三布线106c的工序(工序f);在第一累积层104a的与芯基板100相反侧的面上形成第二累积层104b,形成将其贯通的第三层间连接用IVH105,在第二累积层104b的与芯基板100相反侧的面上形成钎焊用连接端子111,然后,形成具有钎焊用连接端子111露出的开口109a的绝缘层109的工序(工序g)。
引线接合用连接端子110及钎焊用连接端子111分别通过包括如下所述的方法来形成,即:在作为布线的一部分的导体层的表面上依次形成非电解镀镍膜、纯度为99质量%以上的置换镀钯膜或非电解镀钯膜即第一镀钯膜、纯度为90质量%以上且小于99质量%的非电解镀钯膜即第二镀钯膜以及置换镀金膜,在该布线的一部分形成具有第一镀钯膜、第二镀钯膜、及置换镀金膜的连接端子。
另外,在形成具有各镀敷膜的连接端子的工序中,从进一步提高引线接合用连接端子的连接强度的观点来说,可以在置换镀金膜上进而层叠非电解镀金膜。引线接合用连接端子110及钎焊用连接端子111还可以通过包括在布线的一部分形成具有第一镀钯膜、第二镀钯膜、置换镀金膜、以及非电解镀金膜的连接端子的工序来形成。
[工序a]
在工序a中,如图6(a)所示,将包含引线接合用连接端子110的第一布线106a形成于芯基板100的第一主面上。在构成第一布线106a的图案化的布线即铜层的一部分的表面上实施上述镀敷处理,形成引线接合用连接端子110。芯基板上的铜层通过在芯基板表面利用溅射、蒸镀、镀敷等形成铜薄膜后,利用电解铜镀敷法将其膜厚镀敷至期望的厚度的方法来形成。
作为在芯基板上图案化的布线的形成方法,包括在芯基板表面或累积层上形成金属箔,通过蚀刻来除去金属箔的无用的部位的方法(减层法)、仅在芯基板表面或累积层上的必要的部位利用电解镀敷来形成布线的方法(加层法)、在芯基板表面或累积层上形成薄的金属层(片层),然后,利用电解镀敷,形成必要的布线后,利用蚀刻来除去薄的金属层的方法(部分加层法)。
以下,说明在芯基板形成布线的各方法。
<减层法>
在减层法中,可以在芯基板100的表面上形成铜箔后,利用蚀刻除去铜箔的无用的部分。在成为铜箔的布线的部位即成为第一布线106a的部分形成抗蚀涂层,向从抗蚀涂层露出的部位喷射喷雾化学蚀刻液,蚀刻除去不用的金属箔,形成第一布线106a。抗蚀涂层可以使用可以使用于通常的布线板的抗蚀涂层材料。抗蚀涂层可以通过丝网印刷抗蚀剂墨液,或在铜箔上层叠抗蚀涂层用负型感光性干薄膜,在其上重叠使光以布线形状透过的光掩模,用紫外线曝光,用显影液除去未曝光的部位而形成。化学蚀刻液可以使用氯化铜和盐酸的溶液、氯化铁溶液、硫酸和过氧化氢的溶液、过硫酸铵溶液等在通常的布线板中使用的化学蚀刻液。
<加层法>
在加层法中,可以通过在芯基板100表面上的必要的部位进行镀敷而形成第一布线106a。例如,在芯基板100的表面上赋予非电解镀敷用催化剂后,在未进行镀敷的表面部分形成镀敷抗蚀涂层。然后,可以在将形成有镀敷抗蚀涂层的芯基板100浸渍于非电解镀敷液,仅在未被镀敷抗蚀涂层覆盖的部位利用非电解镀敷来形成铜布线及铜端子。
<部分加层法>
在部分加层法中,在芯基板100的表面上形成片层后,将镀敷抗蚀涂层形成为必要的图案,利用电解镀敷来形成第一布线106a。然后,剥离镀敷抗蚀涂层,利用蚀刻除去片层。作为形成片层的方法,有(a)利用蒸镀的方法、(b)利用镀敷的方法、(c)贴合金属箔的方法等。还有,利用这些方法,还能够形成减层法的金属箔。
在(a)利用蒸镀的方法中,例如,利用溅射,形成包括基底金属和薄膜铜层的片形。为了片层形成,可以使用2极溅射、3极溅射、3极溅射、4极溅射、磁控管溅射、镜设备溅射(ミラ一トロンスパツタ;Mirror Tronsputtering)等。作为在溅射中使用的靶体,为了作为基底金属确保密接性,例如,使用Cr、Ni、Co、Pd、Zr、Ni/Cr、Ni/Cu等。基底金属的厚度优选5~50nm。然后,将铜作为靶体,进行溅射,形成厚度200~500nm的薄膜铜层,由此能够形成片层。
在(b)利用镀敷的方法中,可以通过在芯基板表面上利用非电解铜镀敷来形成厚度为0.5~3μm的片层。
在(c)贴合金属箔的方法中,在芯基板具有粘接功能的情况下,通过模压或层叠渡来贴合金属箔,由此能够形成片层。但是,由于很难直接贴合薄的铜箔,因此,有将厚的金属箔粘在一起后,利用蚀刻等减小厚度的方法或在贴合附有载体的铜箔后,剥离载体层的方法等。作为前者的例子,可以举出载体铜/镍/薄膜铜的三层铜箔。通过使用这些方法,用碱蚀刻液除去载体铜,用镍蚀刻液除去镍。作为后者的例子,可以举出将铝、铜、绝缘树脂等作为载体的可剥铜箔。通过使用这些方法,可以形成5μm以下的片层。
还有,在芯基板100贴附厚度9~18μm的铜箔,利用蚀刻,使厚度成为5μm以下地均一地减小厚度,形成片层也可。
可以在利用上述方法形成的片层上,将镀敷抗蚀涂层形成为必要的图案,经由片层,利用电解铜镀敷来形成布线。然后,剥离镀敷抗蚀涂层,最后利用蚀刻等除去片层,由此能够在芯基板100的表面上形成第一布线106a。
利用上述(a)利用蒸镀的方法、(b)利用镀敷的方法及(c)贴合铜箔的方法中的任一个方法等来形成薄膜后,利用电铜镀敷来将铜膜厚镀敷为期望的厚度,由此在基板上形成铜层。在形成于芯基板上的铜层上形成规定形状的抗蚀涂层,使用氯化铜或氯化铁等蚀刻液,可制作铜布线及铜端子。
还有,布线为L/S=35μm/35μm以下的微细布线的情况下,作为布线的形成方法,尤其优选使用部分加层法。
在利用部分加层法形成布线的情况下,优选包括剥离了镀敷抗蚀涂层的状态下的电解铜镀敷层和电解铜镀敷层下侧的片层的布线部分的剖面积(S),与利用蚀刻等除去片层后或对布线表面实施表面粗糙度为Ra成为0.01~0.4μm的处理而形成含有一种以上后述偶合剂等绝缘膜后的包括电解铜镀敷层及电解铜镀敷层的下层的片层的布线部分的剖面积(S’)的面积比(=S’/S)为0.5~1.0,更优选0.7~1.0。
[工序b]
在工序b中,如图6(b)所示,形成用于连接引线接合用连接端子110、和后述的第二布线106b的第一层间连接用IVH102。
在芯基板100为非感光性基材的情况下,在第一通孔102用的贯通孔(IVH孔)的形成中可以使用激光。作为非感光性基材,可以例示所述非感光性玻璃等。使用的激光例如可以使用CO2激光、YAG激光、受激准分子激光等。作为非感光性基材,可以使用上述感光性玻璃。
在芯基板100为感光性基材的情况下,掩蔽第一通孔102以外的区域,向形成第一通孔102的部分照射紫外光。在照射紫外光后,可以利用热处理和蚀刻来形成IVH孔。还有,作为感光性基材,可以使用上述感光性玻璃等。
芯基板100为能够进行利用有机溶剂等药液的化学蚀刻加工的基材的情况下,可以利用化学蚀刻来形成贯通孔。在形成的IVH孔中,利用导电性糊剂的填充或镀敷等来形成导电层,制作第一通孔102。这样在第一通孔102的内部填充有导体,或形成导体层,因此,能够电连接层间。
作为IVH孔的形成方法,除了上述方法之外,可以举出穿孔或钻孔等机械加工、使用了等离子体的干式蚀刻等。
[工序c]
在工序c中,如图6(c)所示,在芯基板100的形成有第一布线106a的第一主面、和相反侧的第二主面形成第二布线106b及第二层间连接端子103。第二布线106b及第二层间连接端子103可以与第一布线106a及引线接合用连接端子(第一层间连接端子)110相同地形成于芯基板100的表面上。
还有,第二布线106b及第二层间连接端子103也在形成微细布线的情况下,与第一布线106a及引线接合用连接端子(第一层间连接端子)110相同地,使用部分加层法来形成。
[工序d]
在工序d中,如图6(d)所示,在形成了上述第二布线106b的面形成第一累积层(层间绝缘层)104a。
作为累积层,可以使用热固化性树脂、热塑性树脂、或那些的混合树脂。其中,从基板的膜厚精度的观点来说,优选以热固化性树脂为主成分。在使用清漆状材料的情况下,可以利用印刷或旋涂,在使用薄膜状绝缘材料的情况下,可以利用层叠或模压等方法来得到累积层。还有,在累积层包含热固化性材料的情况下,优选加热固化累积层。
[工序e]
工序e如图6(e)所示地是在上述第一累积层104a形成第二层间连接用IVH108b的贯通孔108a的工序。作为第二通孔108b的贯通孔108a的形成方案,可以使用通常的激光开孔装置。在激光开孔机中使用的激光的种类可以使用CO2激光、YAG激光、受激准分子激光等,但从生产率及孔品质的方面来说,优选CO2激光。另外,在IVH孔108a的直径小于30μm的情况下,适合能够使激光缩小的YAG激光。另外,在累积层,包括能够进行利用有机溶剂等药液的化学蚀刻加工的材料的情况下,能够利用化学蚀刻来形成IVH孔。
利用与第一层间连接用IVH102相同地在形成的IVH孔108a利用导电性糊剂的填充或镀敷等来形成导体层的方法,形成第二层间连接用IVH108b。这样在第二层间连接用IVH108b的内部填充导体,或形成导体层,因此,层间可电连接。
[工序f]
在工序f中,如图6(f)中,在上述第一累积层104a的表面上形成包含第三层间连接端子112的第三布线106c。第三布线106c及第三层间连接端子112可以与第一布线106a及引线接合用连接端子(第一层间连接端子)110相同地形成。另外,例如,利用镀敷法来形成第二层间连接用IVH(通孔)108b的导体层的情况下,能够与第三布线106c的形成的同时形成。
另外,就累积层中的通孔来说,预先对累积层的贯通孔如上所述地利用导电性糊剂的填充或镀敷等来形成导体层即可。利用模压等将其层叠于芯基板100,就能够制作具有通孔的累积层。
[工序g]
在工序g中,在如图6(g)所示地形成有第三布线106c的第一累积层104a的与芯基板100相反的面上形成第二累积层104b。第二累积层104b可以与第一累积层104a相同地形成。
进而,在工序g中,形成第二累积层104b后,在第二累积层104b形成第三层间连接用IVH105,在第二累积层104b的表面上形成钎焊用连接端子111。钎焊用连接端子111可以与引线接合用连接端子(第一层间连接端子)110相同地形成于第二累积层104b表面上。第三层间连接用IVH105可以与第二层间连接用IVH108b相同地形成。
进而,也可重复工序d~f,形成具有布线及层间连接端子的多个累积层也可。但是,重复工序d~f,形成具有布线及层间连接端子的多个累积层的情况下,钎焊用连接端子111制作为第四层间连接端子。还有,在最外层的累积层上形成的连接端子成为钎焊用端子111。
在工序g中,进而在第二累积层104b的表面上形成绝缘层109。在绝缘层109以使钎焊用端子111的一部分露出的方式设置开口109a。另外,在芯基板100的第一主面上也同样形成绝缘层118。在引线接合用连接端子110的表面上及其周边部分使这些露出地设置开口118a。
作为在绝缘层109及118使用的绝缘被覆材料,通常使用阻焊剂。可以使用热固化型或紫外线固化型,但优选能够精度良好地精加工抗蚀涂层形状的紫外线固化型。例如,可以使用环氧系、聚酰亚胺系、环氧丙烯酸酯系、芴系材料。这些图案形成只要是清漆状材料,还可以通过印刷来进行,按为了进一步确保精度,优选使用感光性的阻焊剂、覆盖层薄膜、薄膜状抗蚀涂层。
仅在一面使用绝缘被覆也无妨,但在固化时发生收缩,因此,仅在一面形成的情况下,在芯基板100容易发生大的翘起。因此,如上所述,优选在半导体芯片搭载用基板的两面形成绝缘被覆。进而,翘起根据绝缘被覆的厚度而变化,因此,更优选两面的绝缘被覆的厚度调节为不发生翘起。在那种情况下,优选通过进行预备探讨,确定两面的绝缘被覆的厚度。另外,在制作薄型的半导体封装件的情况下,绝缘被覆的厚度优选50μm以下,更优选30μm以下。
(端子的镀敷)
在如上所述地得到的芯基板100的第一主面上的第一布线106a的一部分即连接端子110、及第二主面侧的最表层的连接端子111层叠多个镀敷膜。即,在第一布线106a及钎焊用连接端子的一部分即导体的表面依次形成非电解镀镍膜、纯度为99质量%以上的置换镀钯膜或非电解镀钯膜即第一镀钯膜、纯度为90质量%以上且小于99质量%的非电解镀钯膜即第二镀钯膜、及置换镀金膜、或进而非电解镀金膜,由此能够形成钎焊可靠性优越的连接端子、以及引线接合连接可靠性优越的连接端子。
在半导体芯片搭载用基板具有的布线或端子的表面上,根据需要在绝缘物的形成或镀敷层的形成前,可以实施:(A)形成凹凸的工序、(B)形成金属涂层的工序、(C)形成Si-O-Si键的工序、(D)实施偶合处理的工序、(E)涂敷光催化剂的工序、(F)实施使用了密接性改良剂的处理的工序、(G)实施使用了腐蚀抑制剂的处理的工序等中至少一个。以下详述各工序的内容。还有,可以依次进行(A)~(G)的工序,但也可以如后述地变更工序的编号。
(A)形成凹凸的工序
该工序是在布线或端子的表面形成凹凸的工序。作为形成凹凸的方法,有(1)使用酸性溶液的方法、(2)使用碱性溶液的方法、(3)使用具有氧化剂或还原剂的处理液的方法。以下,详述各方法。
(1)使用酸性溶液的方法
作为酸性溶液,可以使用盐酸、硫酸、硝酸、磷酸、醋酸、蚁酸、氯化铜、硫酸铁等化合物、选自碱金属盐化合物、过硫酸铵等的化合物、或组合这些的化合物的水溶液、或含有铬酸、铬酸-硫酸、铬酸-氟酸、重铬酸、重铬酸-硼氟酸等含有酸性为6价的铬的水溶液。还有,关于这些溶液的浓度及处理时间,优选使铜布线及铜端子的表面粗糙度为Ra且成为0.01μm~0.4μm地适当选择条件而选择。
(2)使用碱性溶液的方法
作为碱性溶液,可以使用氢氧化钠、氢氧化钾、碳酸钠等碱金属或碱土类金属的氢氧化物溶液。还有,关于这些溶液的浓度及处理时间,优选使铜布线及铜端子的表面粗糙度为Ra且成为0.01μm~0.4μm地适当选择条件而选择。
(3)使用含有氧化剂或还原剂的处理液的方法
作为含有氧化剂的处理液,可以使用含有亚氯酸钠等氧化剂的水溶液。进而,优选含有OH阴离子源及磷酸三钠等缓冲剂。作为含有还原剂的处理液,可以使用向调节为pH9.0到13.5的碱性溶液中添加甲醛、仲甲醛、芳香族醛化合物的水溶液、或含有次亚磷酸及次亚磷酸盐等的水溶液。可以将铜布线浸渍于含有上述氧化剂的处理液中,在铜表面形成氧化铜敷膜,其次,利用含有还原剂的处理液,还原氧化铜敷膜,在铜布线表面形成微细的凹凸形状。在那种情况下,可以使用上述酸性溶液或碱性溶液,进行了处理后,组合进行处理,使表面粗糙度成为Ra且成为0.01~0.4μm地进行处理即可。
优选作为上述(1)~(3)的处理的预处理,使用溶剂、酸性水溶液或碱性水溶液,实施进行布线及连接端子的表面的清洁化的脱脂处理。脱脂处理可以使用酸性及碱性的水溶液,不特别限定,但优选上述酸性水溶液或碱性水溶液。进而,优选进行用1~5N的硫酸水溶液清洗布线表面的硫酸处理。适当地组合进行脱脂处理及硫酸清洗也可。
(B)形成金属涂层的工序
利用形成凹凸的工序(A),使铜布线及铜端子的表面的表面粗糙度为Ra且成为0.01~0.04μm后,使膜厚为5nm~0.4μm的、包括选自由铜、锡、铬、镍、锌、铝、钴、金、白净、银、钯构成的组的金属、或含有该金属的合金的金属连续或离散地附着于铜布线及铜端子的表面,由此能够形成被表面粗糙度为Ra且成为0.01~0.04μm的金属涂层被覆的布线及连接端子。优选选自由铜、锡、铬、镍、锌、铝、钴构成的组的金属、或含有该金属的合金附着于铜布线或铜端子的表面的期间或附着后,自然地或有意地转换为氧化物、氢氧化物或组合了这些的化合物,在铜布线及铜端子的表面形成含有上述多价金属的氧化物、氢氧化物或组合这些的化合物的层。除了上述金属之外,还可以使用钼、钛、钨、铅、铁、铟、铊、铋、钌、铑、镓、锗等金属,还可以使用含有其中至少两种以上的合金。作为使上述金属附着于布线及连接端子表面的方法,可以举出非电解镀敷、置换反应、喷射喷雾、涂敷、溅射法、蒸镀法等。
(C)形成Si-O-Si键的工序
该工序是使用Si-O-Si键的化合物,在铜布线及铜端子的表面Si-O-Si键的工序。作为具有Si-O-Si键的化合物,可以使用(1)石英玻璃、(2)含有梯子结构的化合物等。
(1)石英玻璃
石英玻璃(SiO2)的厚度优选0.002μm~5μm,优选0.005μm~1μm,进而优选0.01μm~0.2μm。石英玻璃的厚度大于5.0μm的情况下,存在通孔形成工序中的利用激光等的贯通加工变得困难的倾向,小于0.002μm的情况下,存在石英玻璃层的形成变得困难的倾向。
(2)含有梯子结构的化合物
含有梯子结构的化合物是由下述通式(1)表示的含有梯子结构的化合物,式中,R1、R2、R3及R4分别独立地表示选自由氢原子、反应性基、亲水性基、疏水性基构成的组的基。
作为反应性基,例如,可以举出氨基、羟基、羧基、环氧基、巯基、硫羟基、噁唑啉基、环状酯基、环状醚基、异氰酸酯基、酸酐基、酯基、氨基、甲酰基、羰基、乙烯基、羟基取代甲硅烷基、烷氧基取代甲硅烷基、卤素取代甲硅烷基等。作为亲水性基,例如,可以举出多糖基、聚醚基、羟基、羧基、硫酸基、磺酸基、磷酸基、膦盐基、杂环基、氨基、这些的盐及酯等。作为疏水性基,例如,可以举出选自碳原子数为1~60的脂肪族烃基、碳原子数为6~60的芳香族烃基、杂环基及聚硅氧烷残渣的化合物等。其中,从布线的粘接的观点来说,最优选R1、R2、R3及R4为反应性基。
[化1]
(D)实施偶合处理的工序
该工序是在布线表面形成了具有上述Si-O-Si键的化合物后,进而,使用含有偶合剂的溶液,进行处理的工序。通过使用偶合剂,能够提高布线及端子和层间绝缘层(累积层)的密接强度。
作为使用的偶合剂,可以举出硅烷系偶合剂、铝系偶合剂、钛系偶合剂、锆系偶合剂等,其中优选硅烷系偶合剂。作为硅烷系偶合剂,可以举出在分子中具有环氧基、氨基、巯基、咪唑基、乙烯基、或甲基丙烯基等官能团的硅烷系偶合剂。可以单独或混合两种以上这些硅烷系偶合剂而使用。
在硅烷系偶合剂溶液的调整中使用的溶媒可以使用水或醇、酮类等。另外,为了促进偶合剂的水解,还可以添加少量的醋酸或盐酸等酸。
另外,偶合剂的含量优选相对于溶液全部为0.01质量%~5质量%,更优选0.1质量%~1.0质量%。利用偶合剂的处理可以通过向如上所述地调节的偶合剂溶液中浸渍布线及连接端子的基板的方法、向具有布线及连接端子的基板喷射喷雾的方法、在具有布线及连接端子的基板上涂敷的方法等来进行。
通过自然干燥、加热干燥、或真空干燥来干燥用硅烷系偶合剂处理的基板。还有,根据使用的偶合剂的种类,可以在干燥前水洗或进行超声波清洗。
(E)涂敷光催化剂的方法
该方法是在铜布线及铜端子的表面形成具有Si-O-Si键的化合物后,涂敷TIO2、ZnO、SrTiO3、CdS、GaP、InP、GaAs、BaTiO3、BaTi4O9、K2NbO3、Nb2O5、Fe2O3、Ta2O5、K3Ta3Si2O3、WO3、SnO2、Bi2O3、BiVO4、NiO、Cu2O、SiC、MoS2、InPb、RuO2、CeO2等、以及作为具有选自由Ti、Nb、Ta、V的组的元素的层状氧化物的光催化剂粒子的工序。在这些光催化剂中,最优选无害且化学稳定性优越的TiO2、作为TiO2,可以使用锐钛矿、金红石、板钛矿的任一个。
所述工序还可以在实施偶合处理的工序(D)的利用硅烷偶合剂的处理前及/或后进行。另外,光催化剂粒子也可以与由上述通式(1)表示的含有梯子结构的化合物或硅烷偶合剂混合而使用。
在涂敷光催化剂粒子,使其干燥后,可以根据需要,进行热处理,进而照射光。在光照射中可以使用紫外光、可见光、红外光等,其中最优选紫外光。
(F)实施使用了密接性改良剂的工序
该工序是在铜布线及铜端子的表面涂敷密接性改良剂的工序。作为密接性改良剂,可以使用热固化性树脂、热塑性树脂、或那些的混合树脂,但优选热固化性的有机绝缘材料为主成分。作为密接性改良剂,可以使用酚醛树脂、脲醛树脂、蜜胺树脂、醇酸树脂、丙烯酸树脂、不饱和聚酯树脂、二烯丙基酞酸酯树脂、环氧树脂、聚苯并咪唑树脂、聚酰胺树脂、聚酰胺酰亚胺树脂、硅酮树脂、由环戊二烯合成的树脂、含有三(2-羟基乙基)异三聚氰酸酯的树脂、由芳香族腈合成的树脂、三聚化芳香族二氰基酰胺树脂、含有三烯丙基三甲基丙烯酸酯的树脂、呋喃树脂、酮树脂、二甲苯树脂、含有缩合多环芳香族的热固化性树脂、苯并环丁烯树脂、氟树脂、聚酰亚胺树脂、聚苯醚树脂、聚苯硫醚树脂、芳族聚酰胺树脂、液晶聚合物等。
(G)实施使用了腐蚀抑制剂的工序
该工序是在铜布线及铜端子的表面涂敷腐蚀抑制剂的工序。所述工序可以在形成凹凸的工序(A)后、或实施偶合处理的工序(D)前或后进行。还有,腐蚀抑制剂添加于上述酸性溶液、碱性溶液、偶合剂溶液的任一种中而使用也可。
作为腐蚀抑制剂,只要含有至少一种含硫有机化合物、或含氮有机化合物即可。就在此所述的腐蚀抑制剂,可以具体举出含有一种以上以下所述的化合物的化合物,即:巯基、硫醚基或二硫醚基之类的含有硫原子的化合物、或在分子内含有-N=、N=N或-NH2的含N有机化合物。
作为巯基、硫醚基或二硫醚基之类的含有硫原子的化合物,可以举出脂肪族硫醇(HS-(CH2)n-R)等。在此,n表示1到23的整数,R表示一价的有机基、氢原子或卤素原子。
作为R,优选氨基、酰胺基、羧基、羰基、羟基的任一个,但不限定于此。还可以举出碳原子数1~18的烷基、碳原子数1~8的烷氧基、酰氧基、卤代烷基、卤素原子、氢原子、硫代烷基、硫醇基、取代或无取代的苯基、联苯基、萘基、杂环基等。还有,R中的氨基、酰胺基、羧基、羟基为一个即可,优选2个以上,此外具有上述烷基等取代基也可。
式中,优选使用n由1到23的整数表示的化合物,进而,更优选n由4到15的整数表示的化合物,进而,尤其优选由6到12的整数表示的化合物。
作为含硫有机化合物,可以举出噻唑衍生物(噻唑、2-氨基噻唑、2-氨基噻唑-4-羧酸、氨基噻吩、苯并噻唑、2-巯基苯并噻唑、2-氨基-4-甲基苯并噻唑、2-苯并噻唑、2,3-二羟基咪唑[2,1-b]苯并噻唑-6-氨基、2-(2-氨基噻唑-4-基)-2-羟基亚氨基醋酸乙酯、2-甲基苯并噻唑、2-苯基苯并噻唑、2-氨基-4-甲基噻唑等)、噻二唑衍生物(1,2,3-噻二唑、1,2,4-噻二唑、1,2,5-噻二唑、1,3,4-噻二唑、2-氨基-5-乙基-1,3,4-噻二唑、5-氨基-1,3,4-噻二唑-2-硫醇、2,5-巯基-1,3,4-噻二唑、3-甲基巯基-5-巯基-1,2,4-噻二唑、2-氨基-1,3,4-噻二唑、2-(乙基氨基)-1,3,4-噻二唑、2-氨基-5-乙基硫代-1,3,4-噻二唑等)、巯基安息香酸、巯基萘醇、巯基苯酚、4-巯基联苯、巯基醋酸酯、巯基琥珀酸酯、3-巯基巯基丙酸酯、硫代尿嘧啶、3-硫代尿唑、2-硫代氨基巴比妥、4-硫代氨基巴比妥、2-巯基喹啉、硫代蚁酸、1-硫代香豆素、硫代枯茗噻酮(チオクモチアゾン)、硫代甲酚、硫代水杨酸、硫代三聚氰酸(チオチアヌル酸)、硫代萘醇、硫代甲基噻吩、硫代环烃、硫代环烃羧酸酯、硫代环烃醌、硫代巴比妥酸、硫代羟基醌、硫代苯酚、硫代苯、硫代2-苯并呋喃酮、并噻吩、硫醇硫羰碳酸酯、硫代赶卢剔酮、硫醇组氨酸酯、3-羧基丙基二硫醚、2-羟基乙基二硫醚、2-氨基丙酸、二硫代二乙醇酸、D-巯基丙氨酸、二-叔丁基二硫醚、硫代氰、硫氰酸等。
作为在分子内含有-N=、N=N或-NH2的含氮有机化合物,优选三唑衍生物(1H-1,2,3-三唑、2H-1,2,3-三唑、1H-1,2,4-三唑、4H-1,2,4-三唑、苯并三唑、1-氨基苯并三唑、3-氨基-5-巯基-1,2,4-三唑、3-氨基-1H-1,2,4-三唑、3,5-二氨基-1,2,4-三唑、3-氧-1,2,4-三唑、氨基乌拉索等)、四唑衍生物(四唑基、四唑基肼、1H-1,2,3,4-四唑、2H-1,2,3,4-四唑、5-氨基-1H-四唑、1-乙基-1,4-二羟基5H-四唑-5-酮、5-巯基-1-甲基四唑、四唑硫醇等)、噁唑衍生物(噁唑、噁唑基、噁唑啉、苯并噁唑、3-氨基-5-甲基异噁唑、2-巯基苯并噁唑、2-氨基噁唑啉、2-氨基苯并噁唑等)、噁二唑衍生物(1,2,3-噁二唑、1,2,4-噁二唑、1,2,5-噁二唑、1,3,4-噁二唑、1,2,4-噁二唑-5,1,3,4-噁二唑啉-5等)、噁三唑衍生物(1,2,3,4-噁三唑、1,2,3,5-噁三唑等)、嘌呤衍生物(嘌呤、2-氨基-6-羟基-8-巯基嘌呤、2-氨基-6-甲基巯基嘌呤、2-巯基腺嘌呤、巯基次黄嘌呤、巯基嘌呤、尿酸、鸟嘌呤、腺嘌呤、黄嘌呤、茶碱、可可碱(テオブロミン)、咖啡因等)、咪唑衍生物(咪唑、苯并咪唑、2-巯基苯并咪唑、4-氨基-5-咪唑、羧酸酰胺、组氨酸等)、吲唑衍生物(吲唑、3-吲唑酮、吲唑醇等)、吡啶衍生物(2-巯基吡啶、氨基吡啶等)、吡啶衍生物(2-巯基吡啶、2-氨基吡啶等)、嘧啶衍生物(2-巯基嘧啶、2-氨基嘧啶、4-氨基嘧啶、2-氨基-4,6-二羟基嘧啶、4-氨基-6-羟基-2-巯基嘧啶、2-氨基-4-羟基-6-甲基嘧啶、4-氨基-6-羟基-2-甲基嘧啶、4-氨基-6-羟基吡唑酮[3,4-d]嘧啶、4-氨基-6-巯基吡唑酮[3,4-d]嘧啶、2-羟基嘧啶、4-巯基1H-吡唑酮[3,4-d]嘧啶、4-氨基-2,6-二羟基嘧啶、2,4-二氨基-6-羟基嘧啶、2,4,6-三氨基嘧啶等)、硫代尿素衍生物(硫代尿素、乙烯硫代尿素、2-硫代巴比妥酸等)、氨基酸(甘氨酸、丙氨酸、色氨酸、色氨酸、羟基脯氨酸等)、1,3,4-硫代噁二唑酮-5-硫代6,6-二甲基-6H-苯并[d]噁嗪、2-硫代香豆素、硫代糖精、硫代乙内酰脲妥因、硫代比林、γ-硫代比林、胍吖嗪、噁嗪、噁二嗪、蜜胺、2,4,6-三氨基苯酚、三氨基苯、氨基吲哚、氨基喹啉、氨基硫代苯酚、氨基吡唑等。
在含有腐蚀抑制剂的溶液的调节中可以使用水及有机溶媒。有机溶媒的种类不特别限定,但可以使用甲醇、乙醇、正丙醇、正丁醇等醇类、二正丙醚、二正丁醚、二烯丙基醚等醚类、己烷、庚烷、辛烷、壬烷等脂肪族烃、苯、甲苯、苯酚等芳香族烃等,还可以单独或组合两种以上组合使用这些溶媒。
腐蚀抑制剂溶液的浓度优选0.1ppm~5000ppm,更优选0.5ppm~3000ppm,进而优选1ppm~1000ppm。在腐蚀抑制剂的浓度小于0.1ppm的情况下,迁移抑制效果不充分,另外,处于不能得到布线和绝缘树脂的充分的密接强度的倾向。若腐蚀抑制剂的浓度大于5000ppm,则得到迁移抑制效果,但处于不能得到布线和绝缘设置的充分的密接强度的倾向。
关于利用含有腐蚀抑制剂的溶液,对铜布线及铜端子的表面进行进行处理的时间,不特别限定,可以根据腐蚀抑制剂的种类及浓度,适当地改变。
(半导体封装件)
图7是表示封装件的一实施方式的示意剖面图。半导体封装件7a是引线接合类型的半导体封装件。半导体封装件7a具有:上述半导体芯片搭载用基板2a;在半导体芯片搭载用基板2a搭载的半导体芯片120。
半导体芯片搭载用基板2a和半导体芯片120由小片接合薄膜117来粘接。还有,也可以代替小片接合薄膜117,使用小片接合糊剂。
半导体芯片120和引线接合用连接端子110通过使用了金引线115的引线接合来相互电连接。引线接合用连接端子110是在与金引线的接触面上从内侧开始依次形成有非电解镀镍膜、纯度为99质量%以上的第一镀钯膜、纯度为90质量%以上且小于99质量%的第二镀钯膜、置换镀金膜的镀敷膜。因此,得到引线接合连接性优越的连接端子。若在置换镀金膜上进而层叠非电解镀金膜,则引线接合连接可靠性进一步提高。
使用转移塑膜方式,利用半导体用密封树脂116,密封半导体芯片120。对密封区域,还可以仅密封必要的部分,但如图7所示,更优选密封半导体封装件区域整体。这是因为在以行及列排列多个半导体封装件区域的半导体芯片搭载基板中,用切割器等容易同时切断基板和密封树脂。
钎焊用端子111为了进行与母板的电连接,例如,搭载焊锡球114。焊锡球114例如可以使用如上所述的共晶焊锡、无铅焊锡。
钎焊用端子111在与焊锡球114的接触面具有从内侧依次形成有非电解镀镍膜、纯度为99质量%以上的第一镀钯膜、纯度为90质量%以上且小于99质量%的第二镀钯膜、置换镀金膜、或进而非电解镀金膜的镀敷膜。因此,得到钎焊可靠性优越的连接端子。作为用于连接钎焊用端子111和焊锡球114的装置,例如,可以举出使用了Ni2气体的回流装置等。
具有这样的连接端子的半导体封装件7a的引线接合性及钎焊可靠性优越。
图8是表示半导体封装件的其他实施方式的示意剖面图。半导体封装件8a是倒装片类型的半导体封装件。半导体封装件8a具有:半导体芯片搭载用基板2a;在半导体芯片搭载用基板2a搭载的半导体芯片120。
半导体芯片120经由连接凸块119搭载于半导体芯片搭载用基板2a,另外,半导体芯片120和引线接合用连接端子110经由连接凸块119倒装片连接,由此能够得到电连接。
半导体封装件8a如图8所示,欠装部件113充满半导体芯片120和半导体芯片搭载用基板2a之间。这样,优选用欠装部件113密封半导体芯片120和半导体芯片搭载用基板2a之间。欠装部件113的热膨胀系数优选与半导体芯片120及芯基板100的热膨胀系数近似,但不限定于此。更优选欠装部件113的热膨胀系数在半导体芯片120的热膨胀系数及芯基板100的热膨胀系数之间的关系中满足(半导体芯片的热膨胀系数)≤(欠装部件的热膨胀系数)≤(芯基板的热膨胀系数)。
进而,在半导体芯片120的搭载中,还可以使用各向异性导电性薄膜(ACF)或不含有导电性粒子的粘接薄膜(NCF)来进行。在这种情况下,不需要用欠装部件113来密封,因此更优选。进而,在搭载半导体芯片120时并用超声波的情况下,电连接为低温,且能够在短时间内进行,因此进而优选。
与半导体芯片120经由连接凸块119倒装片连接的连接端子110相当于上述引线接合类型的半导体封装件7a的引线接合用连接端子110。连接端子110在与连接凸块119的接触面具有从内侧开始依次形成有非电解镀镍膜、纯度为99质量%以上的第一镀钯膜、纯度为90质量%以上且小于99质量%的第二镀钯膜、置换镀金膜、或进而非电解镀金膜的镀敷膜。因此,得到连接可靠性优越的连接端子。
钎焊用连接端子111与引线接合类型的半导体封装件7a相同地,在与焊锡球114的接触面具有从内侧开始依次形成有非电解镀镍膜、纯度为99质量%以上的第一镀钯膜、纯度为90质量%以上且小于99质量%的第二镀钯膜、置换镀金膜、或进而非电解镀金膜的镀敷膜。因此,得到钎焊可靠性优越的连接端子。作为用于连接钎焊用端子111和焊锡球114的装置,例如,可以举出使用了N2气体的回流装置等。
具有这样的连接端子的半导体封装件8a的钎焊可靠性优越。
另外,为了进行与母板的电连接,可以在钎焊用端子111例如搭载焊锡球114。焊锡球使用共晶焊锡或无Pb焊锡。作为将焊锡球固着于外部连接端子的方法,通常使用N2回流装置,但不限定于此。
半导体封装件8a与制作上述半导体封装件7a时相同地,利用切割器等,将以行及列排列有多个半导体封装件区域的半导体芯片搭载基板切断为各个半导体封装件而制作。
(半导体芯片搭载用基板的形态)
图9(a)是表示本发明的半导体芯片搭载基板的一实施方式的示意俯视图。图9(b)是图9(a)中的区域A的放大图。半导体芯片搭载基板9a的形状从效率良好地进行半导体封装件的组装的观点来说,优选形成为图9(a)所示的薄膜形状。
在半导体芯片搭载基板9a中导体层2上设置有以行及列分别以多个、等间隔以格子状配置有半导体封装件区域13(包括一个半导体封装件的部分)的组件23。在图9(a)中,只记载了两个组件,但根据需要,可以增加组件的数量或在行方向或列方向上设置而形成为格子状。
半导体封装件区域13之间的空间部的宽度优选50~500μm,更优选100~300μm。进而优选与之后在切断半导体封装件时使用的切割器的刀片宽度相同。通过这样配置半导体封装件区域13,能够有效利用半导体芯片搭载基板9a。
进而,优选在半导体封装件区域13之间的空间部或组件23的外侧形成加强图案24。加强图案24优选与在半导体封装件区域形成的布线的同时形成的金属图案。进而,更优选对所述金属图案的表面实施镍、金等的镀敷,或被覆绝缘被膜。在加强图案24为这样的金属图案的情况下,可以作为电解镀敷时的镀敷导线来利用。还有,另行制作加强图案24,与半导体芯片搭载基板贴合也可。
另外,可以在半导体芯片搭载基板9a的端部形成定位标记11。定位的标记11优选基于贯通孔的销孔。符合形成方法或半导体封装件的组装装置地选择销孔的形状或配置即可。
另外,优选在组件23的外侧形成用切割器切断时的切断位置对齐标记25。
如上所述,可以使用切割器等,将以行及列排列有多个半导体封装件区域的半导体芯片搭载基板切断为各个半导体封装件。
以上,基于适合的实施方式,具体说明了本发明,但本发明不限定于上述实施方式。
实施例
以下,基于实施例,详细说明本发明,但本发明不限定于此。
(实施例1)
通过以下的工序,利用图6所示的实施方式的制造方法,制作具有与图2的实施方式相同的结构的半导体芯片搭载用基板。
(工序a:第一布线形成)
作为芯基板100,准备厚度0.4mm的钠玻璃基板(热膨胀系数11ppm/℃),利用溅射来在其一面形成了200nm的铜薄膜(以下称为第一主面)。使用溅射装置(日本真空技术株式会社制、MLH-6315),在下述条件1下进行溅射。进而,利用电铜镀敷来将膜厚10μm的铜镀敷层形成于该铜薄膜上。然后,形成覆盖铜镀敷层中构成布线的部分的抗蚀涂层,使用氯化铁蚀刻液,进行蚀刻,形成了第一布线106a(包含引线接合用连接端子110)。
条件1
电流:3.5A
电压:500V
氩流量:35SCCM
压力:5×10-3Torr(4.9×10-2Pa)
成膜速度:5nm/秒
(工序b:第一通孔形成)
利用激光,从钠玻璃基板的与第一布线106a相反侧的面(以下称为“第二主面”)侧到达引线接合用连接端子110为止,形成直径为50μm的第一层间连接用IVH102用贯通孔(图6(b))。就激光器来说,使用YAG激光器LAVIA-UV2000(住友重机械工业株式会社制、商品名),在频率4kHz、发射数50、掩模直径0.4mm的条件下,进行贯通孔的形成。向形成的贯通孔中填充导电性糊剂MP-200V(日立化成工业株式会社制、商品名),以160℃、30分钟使其固化,形成了与引线接合用连接端子110电连接的第一层间连接用IVH102(图6(b))(以下称为“第一通孔102”)。
(工序c:第二布线形成)
利用溅射,在第二主面上形成了经由在工序b中形成的第一通孔102与第一布线106a及引线接合用连接端子110电连接的厚度200nm的铜薄膜。溅射与工序a相同地进行。还有,利用电铜镀敷,在该铜薄膜上实施膜厚10μm的镀敷。进而,与工序a相同地,形成覆盖铜薄膜中构成布线的部分的抗蚀涂层,使用氯化铁蚀刻液,进行蚀刻,形成了第二布线106b(包含第二层间连接端子103)。
(工序d:累积层形成)
将具有第二布线106b的第二主面侧浸渍于调节为200ml/l的液温50℃的酸性脱脂液Z-200(世界金属公司制、商品名)中2分钟后,将其浸渍于液温50℃的水中2分钟,进而水洗1分钟。其次,同样将第二主面侧浸渍与100ml/l的硫酸水溶液中1分钟,水洗1分钟。进行了这样的预处理后,将具有第二布线106b的第二主面侧浸渍于向利用醋酸调节为pH5的水溶液中使浓度成为0.5%地添加了咪唑硅烷偶合剂IS-1000(日本能量株式会社制、商品名)的溶液中10分钟。然后,在进行1分钟水洗后,在常温下进行干燥。接着,在第二主面上,利用1500rpm的旋涂法,将氰酸酯系树脂组合物的绝缘清漆使厚度成为10μm地涂敷。对于涂敷的绝缘清漆,从常温以6℃/分钟的升温速度加热至230℃,进而在230℃下保持1小时,由此使氰酸酯系树脂组合物热固化,形成了累积层104a。
(工序e:第二通孔的贯通孔形成)
利用激光,从累积层104a的与钠玻璃基板100相反侧的面到达第二层间连接端子103为止,形成直径为50μm的第二层间连接用IVH108b用贯通孔108a,得到图6的(e)所示的结构体6e。就激光器来说,使用YAG激光器LAVIA-UV2000(住友重机械工业株式会社制、商品名),在频率4kHz、发射数20、掩模直径0.4mm的条件下,形成了贯通孔108a。
(工序f:第三布线形成)
在结构体6e的累积层104a的与钠玻璃基板100相反侧的面上,利用溅射,依次形成膜厚20nm的镍层及膜厚200nm的薄膜铜层,得到包括镍层及薄膜铜层的片层。在溅射中使用与工序a相同的装置,在以下所示的条件2下进行。
条件2
(镍层的形成)
电流:5.0A
电流:250V
电压氩流量:35SCCM
压力:5×10-3Torr(4.9×10-2Pa)
成膜速度:0.3nm/秒
(薄膜铜层的形成)
电流:3.5A
电压:500V
氩流量:35SCCM
压力:5×10-3Torr(4.9×10-2Pa)
成膜速度:5nm/秒
其次,利用旋涂法,在片层上涂敷镀敷抗蚀涂层PMER P-LA900PM(东京应化工业株式会社制、商品名),形成了膜厚20μm的镀敷抗蚀涂层。然后,用曝光量1000mJ/cm2对镀敷抗蚀涂层进行曝光,将具有片层及抗蚀涂层的结构体6e浸渍于液温23℃的PMER显影液P-7G中6分钟。在浸渍后,通过摆动,在片层上形成了L/S=10μm/10μm的抗蚀涂层图案。还有,将形成有抗蚀涂层图案的结构体6e向硫酸铜镀敷液中转移,在未被抗蚀涂层图案被覆的部分的片层上实施膜厚约5μm的镀铜图案。然后,将具有抗蚀涂层图案及镀铜图案的结构体6e浸渍于室温(25℃)的丁酮中1分钟,由此除去镀敷抗蚀涂层。其次,将具有镀铜图案的结构体6e浸渍于稀释了5倍的30℃的CPE-700(三菱瓦斯化学株式会社制、商品名)水溶液中30秒钟,摆动的同时,除去未被镀铜图案覆盖的部分的片层,形成了第二层间连接用IVH108b(以下称为“第二通孔108”)及第三布线106c。由此得到图6(f)所示的结构体6f。
(工序g:半导体芯片搭载用基板的制作)
通过再次重复与工序d-工序f相同的操作,进而形成一层包含覆盖第二通孔108b及第三布线106c的累积层104b、和钎焊用端子111的最外层的布线,最后形成阻焊剂层109,制作了图1(a)(半导体封装件一份量的半导体芯片搭载用基板的示意俯视图)、图7(半导体封装件一份量的示意剖面图)及图9(以行及列排列有多个半导体封装件区域的半导体芯片搭载基板的示意俯视图)所示的风扇-内置类型BGA用半导体芯片搭载基板。
(工序h:镀敷的预处理)
将经过工序a~工序g得到的图6(g)所示的半导体芯片搭载用基板6g(以下称为“结构体6g”)浸渍于50℃的脱脂液Z-200(株式会社世界金属制、商品名)中3分钟,水洗2分钟。然后,将结构体6g浸渍于100g/l的过硫酸铵溶液中1分钟,水洗2分钟。然后,将结构体6g浸渍于10%的硫酸中1分钟,水洗2分钟。接着,将结构体6g浸渍于作液温25℃的镀敷活性处理液即SA-100(日立化成工业株式会社制、商品名)中5分钟,水洗2分钟。
(工序i:非电解镀镍膜形成)
将经过了工序h的结构体6g浸渍于液温85℃的非电解镀镍液即NIPS-100(日立化成工业株式会社制、商品名)中25分钟后,水洗1分钟。
(工序j:包括99质量%以上的钯的置换镀钯膜或非电解镀钯膜形成)
在65℃下,将具有具有镀镍膜的连接端子及布线的结构体6g(以下称为“结构体6g-j”)浸渍于用于形成包括99质量%以上的钯的非电解镀钯膜的非电解钯镀敷液(a)(参照表2),水洗1分钟。此时,在非电解镀钯膜中含有的钯的含量(纯度)如表2所示地基本上为100质量%,膜厚为0.01μm。
(工序k:包括90质量%以上~小于99质量%的钯的非电解镀钯膜形成)
接着,在50℃下,将具有依次具有镀镍膜、包括99质量%以上的钯的非电解镀钯膜的连接端子及布线的结构体6g(以下称为“结构体6g-k”)浸渍于形成包括90质量%以上~小于99质量%的钯的非电解镀钯膜的非电解钯镀敷液(b)(参照表2)中5分钟,水洗1分钟。此时,在非电解镀钯膜中含有的钯的含量如表2所示地为约95.5质量%(钯:95.5质量%;磷:4.5质量%),膜厚为0.06μm。
(工序l:置换镀金膜形成)
接着,在85℃下,将具有依次具有镀镍膜、包括99质量%以上的钯的非电解镀钯膜、包括90质量%以上~小于99质量%的钯的非电解镀钯膜的连接端子及布线的结构体6g(以下称为“结构体6g-l”)浸渍于作为置换镀金液的HGS-100(日立化成工业株式会社制、商品名)中10分钟,水洗1分钟。
(工序m:非电解镀金膜形成)
接着,在70℃下,将具有依次具有镀镍膜、包括99质量%以上的钯的非电解镀钯膜、包括90质量%以上~小于99质量%的钯的非电解镀钯膜、置换镀金膜的端子及布线的结构体6g(以下称为“结构体6g-m”)浸渍于作为置换镀金液的HGS-2000(日立化成工业株式会社制、商品名)中30分钟,水洗5分钟。此时,置换镀金及非电解镀金膜的膜厚的总计为0.3μm。
<钎焊可靠性>
关于经过上述工序a~工序m得到的半导体芯片搭载用基板,通过下述的基准,评价了连接端子的连接可靠性。结果示出在表1中。
关于开口直径的直径为600μm的第一半导体芯片搭载基板,使的Sn-3.0Ag-0.5Cu焊锡球,关于开口直径的直径为300μm的第二半导体芯片搭载基板,使的Sn-3.0Ag-0.5Cu焊锡球,关于开口直径的直径为100μm的第三半导体芯片搭载基板,使的Sn-3.0Ag-0.5Cu焊锡球通过回流炉与第一~三的半导体芯片搭载基板的各自1000部位的钎焊端子连接(峰温度252℃),使用耐冲击性高速带测试器4000HS(迪基公司制、商品名),在约200mm/秒的条件下,实施焊锡球的剪断(share)试验。进而,同样制作利用回流,使与上述焊锡球相同的焊锡球连接的第一~三的半导体芯片搭载基板,在150℃下放置1000小时,使用耐冲击性高速带测试器4000HS(迪基公司制、商品名),在约200mm/秒的条件下,进行焊锡球的剪断(share)试验。评价基准如下所述,基于下述基准,对每个端子评价钎焊可靠性。结果示出在表1中。
A:在1000部位全部的焊锡用连接端子中发现焊锡球内中的剪断引起的破坏。
B:在1部位以上且10部位以内发现焊锡球内中的剪断引起的破坏以外的模式导致的破坏。
C:在11部位以上且50部位以内发现焊锡球内中的剪断引起的破坏以外的模式导致的破坏。
D:在51部位以上发现焊锡球内中的剪断引起的破坏以外的模式导致的破坏。
<引线接合连接可靠性>
在150℃下对制作的半导体芯片搭载用基板进行50小时热处理后,进行引线接合。使用金属线直径28μm的1000条金引线,对1000部位全部进行引线接合。评价基准如下所述,基于下述基准,对每个端子,分别评价引线接合连接可靠性。结果示出在表1中。
A:发现1000部位全部的引线接合用连接端子能够引线接合。
B:在1部位以上且5部位以内发现金属线的不粘接部位。
C:在6部位以上且50部位以内发现金属线的不粘接部位。
D:在51部位以上发现金属线的不粘接部位。
还有,使用荧光X射线膜厚计SFT9500(SII·纳米技术株式会社制、商品名),测定非电解镀钯膜的膜厚。结果示出在表1中。另外,使用能量分散型X射线分析装置EMAX ENERGY EX-300(株式会社堀场制作所制、商品名),测定非电解镀钯膜中的钯及磷的含有率。结果示出在表2中。
[表1]
还有,表2中示出在工序j及工序k中使用的钯镀敷液。
[表2]
No | 镀敷液 | Pd纯度 |
(a) | 帕雷德(小岛化学药品株式会社、商品名) | 约100质量% |
(b) | TPD-30(上村工业株式会社、商品名) | 约95.5质量%(Pd:95.5质量%、P:4.5质量%) |
(c) | 氯化钯:0.01mol/l乙二胺:0.08mol/l次磷酸钠:0.03mol/l硫代二乙醇酸:10ppmpH:8 | 约97质量%(Pd:97质量%、P:3质量%) |
(d) | 氯化钯:0.01mol/l乙二胺:0.08mol/l次磷酸钠:0.12mol/l硫代二乙醇酸:10ppmpH:8 | 约94质量%(Pd:94质量%、P:6质量%) |
(e) | MCA(株式会社世界金属制、商品名) | 约100质量% |
(实施例2)
除了不进行实施例1所示的工序m之外,均与实施例1相同地,进行了各工序。结果示出在表1中。
(实施例3~8)
在实施例1所示的工序j及/或工序k中,将结构体6g-j及/或结构体6g-k的浸渍处理时间变更为表1所示,由此在结构体6g-j的连接端子及布线上以及布线结构体6g-k的连接端子及布线上形成了具有各种膜厚的非电解镀钯膜。除此之外,与实施例1相同地进行了各工序。结果示出在表1中。
(实施例9)
在实施例1所示的工序k中,将镀敷液从表2所示的(b)变更为(c),将浸渍时间变更为表1所示,除此之外,与实施例1相同地进行了各工序。结果示出在表1中。
(实施例10~15)
在实施例9所示的工序j及/或工序k中,将结构体6g-j及/或结构体6g-k的浸渍处理时间变更为表1所示,由此在结构体6g-j的连接端子及布线上、及布线结构体6g-k的连接端子及布线上形成了具有各种膜厚的非电解镀钯膜。除此之外,与实施例9相同地进行了各工序。结果示出在表1中。
(实施例16)
在实施例1所示的工序k中,将镀敷液从表2所示的(b)变更为(d),将浸渍时间变更为表1所示,除此之外,与实施例1相同地进行了各工序。结果示出在表1中。
(实施例17~22)
在实施例16所示的工序j及/或工序k中,将结构体6g-j及/或结构体6g-k的浸渍处理时间变更为表1所示,由此在结构体6g-j的连接端子及布线上、及布线结构体6g-k的连接端子及布线上形成了具有各种膜厚的非电解镀钯膜。除此之外,与实施例16相同地进行了各工序。结果示出在表1中。
(实施例23)
在实施例1所示的工序j中,将镀敷液从表2所示的(b)变更为(e),将镀敷液从表2所示的(b)变更为(d),将浸渍时间变更为表1所示,除此之外,与实施例1相同地进行了各工序。结果示出在表1中。
(实施例24、25)
在实施例23所示的工序k中,将结构体6g-k的浸渍处理时间变更为表1所示,由此在结构体6g-k的连接端子及布线上形成了具有各种膜厚的非电解镀钯膜。除此之外,与实施例23相同地进行了各工序。结果示出在表1中。
(比较例1)
除了不进行实施例1所示的工序j以外,均与实施例1相同地进行了各工序。结果示出在表1中。
(比较例2)
除了不进行实施例5所示的工序j以外,均与实施例5相同地进行了各工序。结果示出在表1中。
(比较例3)
除了不进行实施例8所示的工序j以外,均与实施例8相同地进行了各工序。结果示出在表1中。
(比较例4)
除了不进行实施例9所示的工序j以外,均与实施例9相同地进行了各工序。结果示出在表1中。
(比较例5)
除了不进行实施例12所示的工序j以外,均与实施例12相同地进行了各工序。结果示出在表1中。
(比较例6)
除了不进行实施例15所示的工序j以外,均与实施例15相同地进行了各工序。结果示出在表1中。
(比较例7)
除了不进行实施例16所示的工序j以外,均与实施例16相同地进行了各工序。结果示出在表1中。
(比较例8)
除了不进行实施例19所示的工序j以外,均与实施例19相同地进行了各工序。结果示出在表1中。
(比较例9)
除了不进行实施例22所示的工序j以外,均与实施例22相同地进行了各工序。结果示出在表1中。
(比较例10)
除了不进行实施例1所示的工序k以外,均与实施例1相同地进行了各工序。结果示出在表1中。
(比较例11)
除了不进行实施例3所示的工序k以外,均与实施例3相同地进行了各工序。结果示出在表1中。
(比较例12)
除了不进行实施例4所示的工序k以外,均与实施例4相同地进行了各工序。结果示出在表1中。
Claims (16)
1.一种连接端子,其具有:
导体层;
非电解镀镍膜;
第一镀钯膜,其是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜;
第二镀钯膜,其是纯度为90质量%以上且小于99质量%的非电解镀钯膜;和
置换镀金膜,
其中,所述非电解镀镍膜、所述第一镀钯膜、所述第二镀钯膜及所述置换镀金膜依次层叠在所述导体层的一面侧,所述置换镀金膜位于与所述导体层相反侧的最表层。
2.根据权利要求1所述的连接端子,其中,
所述置换镀金膜的膜厚为0.005μm以上。
3.根据权利要求1所述的连接端子,其中,
所述连接端子还具有在所述置换镀金膜上层叠的非电解镀金膜,该非电解镀金膜位于与所述导体层相反侧的最表层。
4.根据权利要求3所述的连接端子,其中,
所述置换镀金膜及所述非电解镀金膜的膜厚之和为0.005μm以上。
5.根据权利要求1所述的连接端子,其中,
所述连接端子为引线接合用连接端子。
6.根据权利要求1所述的连接端子,其中,
所述连接端子为钎焊连接用连接端子。
7.根据权利要求1所述的连接端子,其中,
所述第二镀钯膜为镀钯-磷膜。
8.根据权利要求1所述的连接端子,其中,
所述第一镀钯膜的膜厚为0.4μm以下。
9.根据权利要求1所述的连接端子,其中,
所述第二镀钯膜的的膜厚为0.03~0.3μm。
10.根据权利要求1所述的连接端子,其中,
所述第一镀钯膜及所述第二镀钯膜的膜厚之和为0.03~0.5μm。
11.根据权利要求1所述的连接端子,其中,
所述非电解镀镍膜的纯度为80质量%以上。
12.根据权利要求1所述的连接端子,其中,
所述非电解镀镍膜的膜厚为0.1~20μm。
13.根据权利要求1所述的连接端子,其中,
所述导体层包含选自由铜、钨、钼及铝构成的组中的至少一种金属。
14.一种半导体封装件,其具有:
基板;
形成于该基板上的布线;
连接端子,其为权利要求1~13中任一项所述的连接端子,其中将所述布线的一部分作为所述导体层;
半导体芯片,其以与该连接端子电连接的方式搭载于所述基板。
15.半导体封装件的制造方法,包括:
在形成于基板上的导体层的一部分的表面上依次形成非电解镀镍膜、第一镀钯膜、第二镀钯膜以及置换镀金膜,其中所述第一镀钯膜是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜,所述第二镀钯膜是纯度为90质量%以上且小于99质量%的非电解镀钯膜,由此形成具有所述导体层的一部分、所述第一镀钯膜、所述第二镀钯膜及所述置换镀金膜的连接端子的工序;
将半导体芯片以与所述连接端子电连接的方式搭载于所述基板的工序。
16.半导体封装件的制造方法,包括:
在形成于基板上的导体层的一部分的表面上依次形成非电解镀镍膜、第一镀钯膜、第二镀钯膜、置换镀金膜以及非电解镀金膜,所述第一镀钯膜是纯度为99质量%以上的置换镀钯膜或非电解镀钯膜,所述第二镀钯膜是纯度为90质量%以上且小于99质量%的非电解镀钯膜,由此形成具有所述导体层的一部分、所述第一镀钯膜、所述第二镀钯膜、所述置换镀金膜及所述非电解镀金膜的连接端子的工序;
将半导体芯片以与所述连接端子电连接的方式搭载于所述基板的工序。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007118732 | 2007-04-27 | ||
JP118732/2007 | 2007-04-27 | ||
JP2008097381A JP5286893B2 (ja) | 2007-04-27 | 2008-04-03 | 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 |
JP097381/2008 | 2008-04-03 | ||
PCT/JP2008/057859 WO2008136327A1 (ja) | 2007-04-27 | 2008-04-23 | 接続端子、接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101668880A true CN101668880A (zh) | 2010-03-10 |
CN101668880B CN101668880B (zh) | 2011-03-09 |
Family
ID=40166379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800135016A Expired - Fee Related CN101668880B (zh) | 2007-04-27 | 2008-04-23 | 连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8426742B2 (zh) |
JP (1) | JP5286893B2 (zh) |
KR (1) | KR101107834B1 (zh) |
CN (1) | CN101668880B (zh) |
TW (1) | TWI340617B (zh) |
WO (1) | WO2008136327A1 (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102605359A (zh) * | 2011-01-25 | 2012-07-25 | 台湾上村股份有限公司 | 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 |
CN103249243A (zh) * | 2012-02-03 | 2013-08-14 | 景硕科技股份有限公司 | 线路积层板的线路结构 |
CN103290402A (zh) * | 2012-02-23 | 2013-09-11 | 财团法人工业技术研究院 | 提供防护性与导热性涂层的方法 |
CN103314651A (zh) * | 2010-12-23 | 2013-09-18 | 安美特德国有限公司 | 用于获得对印刷电路板和ic基板上的铜线键合的钯表面修饰的方法 |
CN104254198A (zh) * | 2013-06-28 | 2014-12-31 | 京瓷Slc技术株式会社 | 布线基板 |
CN104299916A (zh) * | 2013-07-16 | 2015-01-21 | 索尼公司 | 配线基板及制造方法,部件嵌入式玻璃基板及制造方法 |
TWI479048B (zh) * | 2011-10-24 | 2015-04-01 | Kojima Chemicals Co Ltd | 無電解鈀敷液 |
CN106341943A (zh) * | 2015-07-09 | 2017-01-18 | 旭德科技股份有限公司 | 线路板及其制作方法 |
CN110923680A (zh) * | 2018-09-20 | 2020-03-27 | Mk化学科技有限公司 | 含具有羰基氧的嘌呤或嘧啶类化合物的取代型无电解镀金液及利用其的方法 |
CN111744549A (zh) * | 2020-07-25 | 2020-10-09 | 合肥学院 | 一种玻璃纤维布负载W/BiVO4光催化剂的制备方法及应用 |
CN112242306A (zh) * | 2019-07-16 | 2021-01-19 | 株式会社东芝 | 半导体装置的制造方法及金属的层叠方法 |
TWI824612B (zh) * | 2022-07-11 | 2023-12-01 | 台灣上村股份有限公司 | 金鈀金鍍膜結構及其製作方法 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5042894B2 (ja) * | 2008-03-19 | 2012-10-03 | 松田産業株式会社 | 電子部品およびその製造方法 |
KR101195786B1 (ko) | 2008-05-09 | 2012-11-05 | 고쿠리츠 다이가쿠 호진 큐슈 코교 다이가쿠 | 칩 사이즈 양면 접속 패키지의 제조 방법 |
US8132321B2 (en) * | 2008-08-13 | 2012-03-13 | Unimicron Technology Corp. | Method for making embedded circuit structure |
JP5140565B2 (ja) * | 2008-11-28 | 2013-02-06 | 三洋電機株式会社 | 素子搭載用基板、半導体モジュール、および携帯機器 |
JP2010251483A (ja) * | 2009-04-14 | 2010-11-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP4511623B1 (ja) * | 2009-05-08 | 2010-07-28 | 小島化学薬品株式会社 | 無電解パラジウムめっき液 |
TW201041105A (en) * | 2009-05-13 | 2010-11-16 | Advanced Semiconductor Eng | Substrate having single patterned metal layer, and package applied with the same, and methods of manufacturing the substrate and package |
DE102009038674B4 (de) * | 2009-08-24 | 2012-02-09 | Epcos Ag | Trägervorrichtung, Anordnung mit einer solchen Trägervorrichtung sowie Verfahren zur Herstellung eines mindestens eine keramische Schicht umfassenden struktururierten Schichtstapels |
TWI470757B (zh) * | 2009-10-22 | 2015-01-21 | Unimicron Technology Corp | 封裝基板及其製法 |
CN102143654A (zh) * | 2010-01-29 | 2011-08-03 | 旭硝子株式会社 | 元件搭载用基板及其制造方法 |
JP5843249B2 (ja) * | 2010-04-19 | 2016-01-13 | 奥野製薬工業株式会社 | 無電解パラジウムめっき又は無電解パラジウム合金めっきの前処理用活性化液 |
JP5552934B2 (ja) * | 2010-07-20 | 2014-07-16 | Tdk株式会社 | 被覆体及び電子部品 |
US8884434B2 (en) * | 2010-09-27 | 2014-11-11 | Infineon Technologies Ag | Method and system for improving reliability of a semiconductor device |
KR20130007022A (ko) * | 2011-06-28 | 2013-01-18 | 삼성전기주식회사 | 인쇄회로기판 및 이의 제조방법 |
KR101310256B1 (ko) | 2011-06-28 | 2013-09-23 | 삼성전기주식회사 | 인쇄회로기판의 무전해 표면처리 도금층 및 이의 제조방법 |
US20130048355A1 (en) * | 2011-08-30 | 2013-02-28 | Ibiden Co., Ltd. | Printed wiring board |
US8780576B2 (en) * | 2011-09-14 | 2014-07-15 | Invensas Corporation | Low CTE interposer |
JP5086485B1 (ja) * | 2011-09-20 | 2012-11-28 | Jx日鉱日石金属株式会社 | 電子部品用金属材料及びその製造方法 |
KR101301795B1 (ko) * | 2011-10-04 | 2013-08-29 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 |
JP5284526B1 (ja) * | 2011-10-04 | 2013-09-11 | Jx日鉱日石金属株式会社 | 電子部品用金属材料及びその製造方法 |
JP5983336B2 (ja) * | 2011-11-17 | 2016-08-31 | Tdk株式会社 | 被覆体及び電子部品 |
JP6020070B2 (ja) * | 2011-11-17 | 2016-11-02 | Tdk株式会社 | 被覆体及び電子部品 |
TWI493798B (zh) | 2012-02-03 | 2015-07-21 | Jx Nippon Mining & Metals Corp | Push-in terminals and electronic parts for their use |
JP6029435B2 (ja) | 2012-06-27 | 2016-11-24 | Jx金属株式会社 | 電子部品用金属材料及びその製造方法、それを用いたコネクタ端子、コネクタ及び電子部品 |
JP6050664B2 (ja) | 2012-06-27 | 2016-12-21 | Jx金属株式会社 | 電子部品用金属材料及びその製造方法、それを用いたコネクタ端子、コネクタ及び電子部品 |
JP2014027020A (ja) * | 2012-07-24 | 2014-02-06 | Toshiba Corp | 回路基板、電子機器、および回路基板の製造方法 |
KR20140043955A (ko) * | 2012-09-21 | 2014-04-14 | 삼성전기주식회사 | 전극 패드, 이를 이용한 인쇄 회로 기판 및 그의 제조 방법 |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
JP2014146652A (ja) | 2013-01-28 | 2014-08-14 | Toppan Printing Co Ltd | 配線基板およびその製造方法 |
US9275925B2 (en) * | 2013-03-12 | 2016-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for an improved interconnect structure |
JP6266907B2 (ja) * | 2013-07-03 | 2018-01-24 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
US9425149B1 (en) * | 2013-11-22 | 2016-08-23 | Altera Corporation | Integrated circuit package routing with reduced crosstalk |
JP2015213124A (ja) * | 2014-05-02 | 2015-11-26 | イビデン株式会社 | パッケージ基板 |
US10325876B2 (en) * | 2014-06-25 | 2019-06-18 | Nxp Usa, Inc. | Surface finish for wirebonding |
TWI572268B (zh) * | 2014-10-13 | 2017-02-21 | 欣興電子股份有限公司 | 中介板及其製造方法 |
US9603258B2 (en) * | 2015-08-05 | 2017-03-21 | Uyemura International Corporation | Composition and method for electroless plating of palladium phosphorus on copper, and a coated component therefrom |
US9633924B1 (en) | 2015-12-16 | 2017-04-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method for forming the same |
CN112954995A (zh) * | 2016-01-08 | 2021-06-11 | 利罗特瑞公司 | 印刷电路表面抛光、使用方法和由此制成的组件 |
DE102016216308B4 (de) | 2016-08-30 | 2022-06-15 | Schweizer Electronic Ag | Leiterplatte und Verfahren zu deren Herstellung |
EP3419052A4 (en) * | 2017-01-03 | 2019-09-18 | Shenzhen Goodix Technology Co., Ltd. | SUBSTRATE STRUCTURE FOR PACKING SCHIP |
US10181447B2 (en) | 2017-04-21 | 2019-01-15 | Invensas Corporation | 3D-interconnect |
CN107517541A (zh) * | 2017-07-31 | 2017-12-26 | 瑞声精密电子沭阳有限公司 | 电路板及电路板的制作方法 |
JP7365759B2 (ja) * | 2018-02-27 | 2023-10-20 | Tdk株式会社 | 回路モジュール |
CN110849918B (zh) * | 2019-10-31 | 2021-11-09 | 北京时代民芯科技有限公司 | 一种倒装焊器件焊点缺陷无损检测方法和系统 |
IT201900022632A1 (it) * | 2019-12-02 | 2021-06-02 | St Microelectronics Srl | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
JP2022185288A (ja) * | 2021-06-02 | 2022-12-14 | 上村工業株式会社 | 多層めっき皮膜 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05343834A (ja) | 1991-07-31 | 1993-12-24 | Matsushita Electric Works Ltd | セラミック配線板の製造方法 |
JP3345529B2 (ja) | 1995-06-20 | 2002-11-18 | 日立化成工業株式会社 | ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法 |
JP3596335B2 (ja) | 1995-06-20 | 2004-12-02 | 日立化成工業株式会社 | ワイヤボンディング端子を用いた半導体搭載用基板 |
US5675177A (en) * | 1995-06-26 | 1997-10-07 | Lucent Technologies Inc. | Ultra-thin noble metal coatings for electronic packaging |
JP3478684B2 (ja) | 1996-10-25 | 2003-12-15 | キヤノン株式会社 | ガラス回路基板 |
JPH10242205A (ja) * | 1997-03-03 | 1998-09-11 | Hitachi Chem Co Ltd | ワイヤボンディング端子とその形成方法 |
JP2000277897A (ja) | 1999-03-24 | 2000-10-06 | Hitachi Chem Co Ltd | はんだボール接続用端子とその形成方法並びに半導体搭載用基板の製造方法 |
KR100371567B1 (ko) * | 2000-12-08 | 2003-02-07 | 삼성테크윈 주식회사 | Ag 선도금을 이용한 반도체 패키지용 리드프레임 |
JP3910363B2 (ja) * | 2000-12-28 | 2007-04-25 | 富士通株式会社 | 外部接続端子 |
JP3567253B2 (ja) | 2001-12-17 | 2004-09-22 | 独立行政法人産業技術総合研究所 | パラジウムまたはパラジウム合金被覆多孔質体の製造方法 |
JP2003297973A (ja) * | 2002-03-28 | 2003-10-17 | Hitachi Chem Co Ltd | 半導体パッケージ用基板、その製造方法、半導体パッケージおよびその製造方法 |
US20050001316A1 (en) * | 2003-07-01 | 2005-01-06 | Motorola, Inc. | Corrosion-resistant bond pad and integrated device |
JP4449459B2 (ja) | 2004-01-07 | 2010-04-14 | 日立化成工業株式会社 | ワイヤボンディング用端子とその製造方法及びそのワイヤボンディング用端子を有する半導体搭載用基板。 |
JP2005317729A (ja) * | 2004-04-28 | 2005-11-10 | Hitachi Chem Co Ltd | 接続端子、その接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法 |
US7179738B2 (en) * | 2004-06-17 | 2007-02-20 | Texas Instruments Incorporated | Semiconductor assembly having substrate with electroplated contact pads |
KR101016158B1 (ko) * | 2005-01-05 | 2011-02-17 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
JP2006196648A (ja) * | 2005-01-13 | 2006-07-27 | Hitachi Metals Ltd | 外部接合電極付き電子部品およびその製造方法 |
JP4674120B2 (ja) | 2005-06-06 | 2011-04-20 | 京セラSlcテクノロジー株式会社 | 配線基板およびその製造方法 |
-
2008
- 2008-04-03 JP JP2008097381A patent/JP5286893B2/ja not_active Expired - Fee Related
- 2008-04-23 CN CN2008800135016A patent/CN101668880B/zh not_active Expired - Fee Related
- 2008-04-23 WO PCT/JP2008/057859 patent/WO2008136327A1/ja active Application Filing
- 2008-04-23 KR KR1020097024655A patent/KR101107834B1/ko not_active IP Right Cessation
- 2008-04-23 US US12/597,835 patent/US8426742B2/en not_active Expired - Fee Related
- 2008-04-24 TW TW097115059A patent/TWI340617B/zh active
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103314651A (zh) * | 2010-12-23 | 2013-09-18 | 安美特德国有限公司 | 用于获得对印刷电路板和ic基板上的铜线键合的钯表面修饰的方法 |
CN103314651B (zh) * | 2010-12-23 | 2016-12-28 | 安美特德国有限公司 | 用于获得对印刷电路板和ic基板上的铜线键合的钯表面修饰的方法 |
CN102605359A (zh) * | 2011-01-25 | 2012-07-25 | 台湾上村股份有限公司 | 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺 |
TWI479048B (zh) * | 2011-10-24 | 2015-04-01 | Kojima Chemicals Co Ltd | 無電解鈀敷液 |
CN103249243A (zh) * | 2012-02-03 | 2013-08-14 | 景硕科技股份有限公司 | 线路积层板的线路结构 |
CN103290402A (zh) * | 2012-02-23 | 2013-09-11 | 财团法人工业技术研究院 | 提供防护性与导热性涂层的方法 |
CN104254198A (zh) * | 2013-06-28 | 2014-12-31 | 京瓷Slc技术株式会社 | 布线基板 |
CN104299916B (zh) * | 2013-07-16 | 2019-03-08 | 索尼公司 | 配线基板及制造方法,部件嵌入式玻璃基板及制造方法 |
CN104299916A (zh) * | 2013-07-16 | 2015-01-21 | 索尼公司 | 配线基板及制造方法,部件嵌入式玻璃基板及制造方法 |
CN106341943A (zh) * | 2015-07-09 | 2017-01-18 | 旭德科技股份有限公司 | 线路板及其制作方法 |
CN106341943B (zh) * | 2015-07-09 | 2019-05-24 | 旭德科技股份有限公司 | 线路板及其制作方法 |
CN110923680A (zh) * | 2018-09-20 | 2020-03-27 | Mk化学科技有限公司 | 含具有羰基氧的嘌呤或嘧啶类化合物的取代型无电解镀金液及利用其的方法 |
CN110923680B (zh) * | 2018-09-20 | 2021-09-24 | Mk化学科技有限公司 | 含具有羰基氧的嘌呤或嘧啶类化合物的取代型无电解镀金液及利用其的方法 |
CN112242306A (zh) * | 2019-07-16 | 2021-01-19 | 株式会社东芝 | 半导体装置的制造方法及金属的层叠方法 |
CN111744549A (zh) * | 2020-07-25 | 2020-10-09 | 合肥学院 | 一种玻璃纤维布负载W/BiVO4光催化剂的制备方法及应用 |
TWI824612B (zh) * | 2022-07-11 | 2023-12-01 | 台灣上村股份有限公司 | 金鈀金鍍膜結構及其製作方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI340617B (en) | 2011-04-11 |
WO2008136327A1 (ja) | 2008-11-13 |
US20100071940A1 (en) | 2010-03-25 |
KR20100007920A (ko) | 2010-01-22 |
US8426742B2 (en) | 2013-04-23 |
KR101107834B1 (ko) | 2012-02-09 |
TW200850107A (en) | 2008-12-16 |
JP5286893B2 (ja) | 2013-09-11 |
JP2008291348A (ja) | 2008-12-04 |
CN101668880B (zh) | 2011-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101668880B (zh) | 连接端子、使用了连接端子的半导体封装件及半导体封装件的制造方法 | |
JP4747770B2 (ja) | プリント配線板の製造方法、及び半導体チップ搭載基板の製造方法 | |
US7588835B2 (en) | Method of treating the surface of copper and copper | |
CN101137768B (zh) | 铜的表面处理方法以及铜 | |
JP4872368B2 (ja) | 銅表面の前処理方法及びこの方法を用いた配線基板 | |
CN101790903B (zh) | 多层印刷线路板以及多层印刷线路板的制造方法 | |
JP6201622B2 (ja) | 接続端子及びそれを用いた半導体チップ搭載用基板 | |
JP2009155668A (ja) | 無電解パラジウムめっき反応開始促進前処理液、この前処理液を用いた無電解めっき方法、無電解めっき方法で形成された接続端子並びにこの接続端子を用いた半導体パッケージ及びその製造方法 | |
CN101810063A (zh) | 多层印刷线路板以及多层印刷线路板的制造方法 | |
JP5105137B2 (ja) | 銅箔を有する基板の製造方法及び銅箔を有する基板 | |
JP4774844B2 (ja) | 銅の表面処理方法及び銅 | |
JP5109399B2 (ja) | 銅の表面処理方法 | |
JP2005086071A (ja) | 多層配線基板、半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法 | |
JP4605446B2 (ja) | 多層配線基板、半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法 | |
JP2008248269A (ja) | 銅表面の処理方法およびこの方法を用いた配線基板 | |
JP5278725B2 (ja) | 接続端子の製造方法とその接続端子を用いた半導体チップ搭載用基板の製造方法 | |
JP2007107080A (ja) | 銅の表面処理方法及び銅表面 | |
JP2007262579A (ja) | 銅の表面処理方法及び銅 | |
JP7421559B2 (ja) | 金属の表面処理液およびその濃縮液、金属の表面処理液セットおよび表面処理方法ならびにプリント配線板の製造方法 | |
JP2009117637A (ja) | 接続端子とその接続端子を用いた半導体チップ搭載用基板及び半導体チップ搭載用基板の製造方法並びに無電解めっきの前処理方法、無電解めっき方法 | |
JP2007142376A (ja) | 半導体チップ搭載用基板、これを用いた半導体パッケージ | |
JP2010090402A (ja) | めっき析出物 | |
JP2006316300A (ja) | 銅の表面処理方法及び銅表面 | |
JP2007134692A (ja) | 半導体チップ搭載用基板、これを用いた半導体パッケージ | |
JP5194748B2 (ja) | 銅表面の処理方法、銅および配線基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110309 Termination date: 20170423 |
|
CF01 | Termination of patent right due to non-payment of annual fee |