CN112954995A - 印刷电路表面抛光、使用方法和由此制成的组件 - Google Patents
印刷电路表面抛光、使用方法和由此制成的组件 Download PDFInfo
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Abstract
本申请涉及印刷电路表面抛光、使用方法和由此制成的组件。一种用于印刷电路板(PCB)和半导体晶片的表面抛光,包含设置在铝或铜导电金属表面上的镍。包含全部或部分含氮分子的阻挡层被沉积在镍层的表面上以制造阻挡层/无电镀镍(BLEN)表面抛光。阻挡层允许焊料在表面抛光上回流。任选地,可以在阻挡层上涂覆金(例如浸金)以生成镍/阻挡层/金(NBG)表面处理。阻挡层的存在使得表面处理比传统的无电镀镍/浸金(ENIG)表面抛光更光滑。阻挡层的存在导致随后施加的焊点比传统的ENIG更强固并且更不容易发生脆断。
Description
本申请是2017年1月9日提交的题为“印刷电路表面抛光、使用方法和由此制成的组件”的中国专利申请201780005794.2的分案申请。
相关申请的交叉引用
本申请要求2016年1月8日提交的(档案号为3037-001-02)、名称为“一种为了电子组件的可靠性更好的新颖的无电镀镍/浸金(ENIG)表面抛光”、申请号为No.62/276,485的美国临时专利申请的优先权益;与本文公开没有不一致的程度上,通过引用将其并入本文。
背景技术
表面抛光被施加在印刷电路板(PCB)的铜导体层上。图案化的表面抛光可以起到掩模的作用,以在铜的蚀刻期间保护衬底上的选定图案的铜导体。表面抛光还可以减少或消除铜表面的腐蚀,以确保合适的表面化学作用用于施加焊料并与焊料反应,从而与电子元件进行电和物理连接。
此外,一些表面抛光尤其擅长提供光滑的表面。光滑的表面对于在例如手机、平板电脑和笔记本电脑等高价值产品中安装高密度元件尤其重要。一种对于高密度元件安装特别有吸引力的目前可用的表面抛光是无电镀镍/浸金,通常称为ENIG。
不幸的是,ENIG有一个缺点,就是容易形成脆性焊点。在某些情况下,已经发现称为“黑色焊盘”的情况对应于脆性焊点。脆性焊点可能会失效(特别是在振动和/或冲击载荷下)并导致电子组件和电子组件在其中运行的产品失灵和发生故障。
图1是根据现有技术的ENIG表面处理的侧面剖视图(未按比例)。可以领会的,尽管ENIG的一个主要益处是表面平滑,但无电镀镍106中的深的晶间边界112倾向于引起金层110中的开口以及可能不理想的表面粗糙度。
发明内容
实施例针对镍-阻挡层-金(NBG)电路表面抛光,观察到与常规无电镀镍-浸金(ENIG)表面抛光相比,减少了与腐蚀相关的问题。已经观察到NBG表面抛光可减少公知的影响ENIG的“黑色焊盘”缺陷。实验结果表明,发明人已经实现了表现出改善的鲁棒性的焊点。发明人考虑NBG化学作用和工艺可能会提供更好的电子组件的可靠性。发明人考虑NBG表面化学作用使得便携式电子设备具有改进的冲击和振动能力。
根据一个实施例,NBG表面抛光的阻挡层部分包含在施加薄的金层之前沉积到镍层表面上的全部或部分反应性含氮分子。在各种实施例中,含氮分子可以包含与碳共价结合的伯、仲或叔氮。氮可以作为取代的脂族烃或取代的芳族烃存在。根据一些实施例,氮可以包含取代的硅氧烷,其中氮与硅共价结合,或者氮与碳基共价结合,该碳基与硅共价结合。
根据一个实施例,表面抛光包括包含铜上的无电镀镍层的阻挡层,以及设置在无电镀镍层上的阻挡层,该阻挡层包含沉积在无电镀镍表面上的胺或胺片段。根据一个实施例,电镀镍可以代替无电镀镍。
根据一个实施例,NBG表面抛光被施加到传统的印刷电路板上,例如玻璃纤维增强的环氧树脂(例如FR4)上的铜或聚酰亚胺上的铜。
根据另一个实施例,NBG表面抛光被施加到半导体集成电路的铝导体。
根据一个实施例,阻挡层通过从含水溶剂中化学吸附而沉积到镍层上。
根据另一个实施例,阻挡层通过来自诸如丁烷蒸气的蒸气的含氮分子的凝结而沉积到镍层上。
根据一个实施例,电子设备包括包含NBG表面抛光的电路组件。与使用其他表面抛光相比,电子设备可以展现出改善的冲击和/或振动耐受性。
根据一个实施例,一种用于制造电路的方法包含施加NBG表面抛光。
根据一个实施例,物质的组合物包含屏障溶液。
根据一个实施例,物质的组合物包含具有比传统的基于ENIG的焊点更密地包含的金属间层的焊点。
根据一些实施例,电子组件、无线电组件、光学组件或卫星或航天器子组件可以包含用NBG表面化学作用制成的NBG导体或焊点。
根据一个实施例,PCB表面抛光包含在镍上的包含含氮分子的阻挡层。镍被设置在底层金属上。例如,底层金属可以包含铜或铝。
根据一个实施例,一种光通信产品包括:半导体管芯;设置在所述半导体管芯上的平面金属区域,以及在平面金属区域上形成的波导;所述平面金属区域包括:由铝形成的第一金属层;在铝上形成的无电镀镍;包含沉积在无电镀镍上的烷基胺的阻挡层;以及在无电镀镍和阻挡层上形成的浸金层。
附图说明
图1是根据现有技术的无电镀镍-阻挡层-金ENIG表面处理的侧面截面图(未按比例)。
图2是根据一个实施例的在镍(BLON)表面处理上的阻挡层的侧面截面图(未按比例)。
图3是根据一个实施例的镍-阻挡层-金(NBG)表面处理的侧面截面图(未按比例)。
图4是根据一个实施例的使用NBG表面抛光制成的铜焊盘上的焊点的截面图(未按比例)。
图5是示出根据一个实施例的用于制造NBG表面抛光的工艺和/或包含由NBG表面抛光制成的焊点的电子组件的工艺的流程图。
图6是根据一个实施例的分段NBG表面处理的透射电子显微镜图像600。
图7是根据一个实施例的无电镀镍上的阻挡层表面的SEM图像。
图8是根据一个实施例的与图7相同放大倍数的无电镀镍表面的SEM图像。
图9是根据一个实施例的对应于阻挡层的表面的表面轮廓测定仪输出。
图10是根据一个实施例的对应于无电镀镍层的表面的表面轮廓测定仪输出。
图11-14是根据一个实施例的辉光放电发射光谱仪(GDOES)图形。
图15是示出根据一个实施例的说明NBG表面抛光示踪的图。
具体实施方式
在下面的详细描述中,参考了附图,其构成了本文的一部分。在附图中,除非上下文另有指示,否则相似的符号通常标识相似的元件。在详细的说明书、附图和权利要求中描述的说明性实施例并不意味着限制。可以使用其他实施例,并且可以做出其他改变,而不脱离这里给出的主题的精神或范围。
表面抛光在PCB的铜焊盘和用于与组装的表面安装元件进行电和物理接触的焊料之间提供屏障。表面抛光可以减少回流过程中铜扩散到焊料中,从而减少焊点物理强度的退化。各种类型的表面抛光确保了在焊点处PCB到表面安装元件的物理和电连续性的可靠性,这对于电子设备随着时间流逝的可靠运行是至关重要的。
ENIG的一个主要优点涉及它的镍层的作用,其起到底层铜到焊点的扩散的阻挡层的作用。ENIG工艺包括应用无电镀镍,然后在无电镀镍上形成浸金层。浸金层为钝化镍表面提供保护屏障。在回流焊接过程中,金层溶解到熔融焊料中,作为结果的金属间结构形成无电镀镍原子和焊料之间的结合。
根据一些实施例,ENIG表面抛光的传统部分通过在无电镀镍和金之间插入阻挡层而得到加强。该阻挡层包含一个或多个反应性含氮分子。
如本文所用,术语“无电镀镍”是指磷掺杂镍,或者可选地,硼掺杂镍。
如本文所用,短语反应性含氮分子是指含有氮且具有与镍表面反应以将所述分子的至少含氮部分粘附至镍表面的能力的分子。
发明人发现了在印刷电路板(PCB)上的无电镀镍/浸金(ENIG)表面抛光中的黑色焊盘缺陷的根本原因。发明人将该现象描述为在镍表面上的浸金沉积过程中的超腐蚀活性。
发现在此描述的阻挡层的实施例降低了回流焊接点中富磷区域的沉积物的浓度。富磷区域的减少与更高的焊点延展性和降低的脆断倾向相关。发明人考虑NBG表面抛光可以减少或消除与腐蚀有关的问题(例如,黑色焊盘缺陷以及类似于黑色焊盘但是可能肉眼不可见的微小缺陷),并为了电子组件和组件在其中起作用的产品的更好可靠性,包含改进的冲击和振动阻力,与使用ENIG表面化学作用相比,提供鲁棒的焊接接头。
图2是根据一个实施例的镍上阻挡层(BLON)表面处理的理想的侧面截面图。金属(M)层102由衬底104支撑。在一个实例中,衬底是诸如FR4的玻璃纤维增强的环氧树脂,并且金属M是铜(Cu)。铜可以在约10至100微米厚之间。在另一个实例中,衬底是诸如单晶硅(Si)、玻璃或玻璃上半导体的半导体,并且金属M是铝(Al)。
镍(Ni)层106设置在金属M的表面上。镍层通常可以是无电镀镍,其包括磷(P)或硼(B)组分。在常规的掺磷无电镀镍中,磷含量通常可以是8-9wt%。镍层106通常可以是约3-6微米厚。
阻挡层包含在镍106表面上的独立沉积的含氮分子或分子片段。应理解阻挡层一般沉积到仅一个或几个原子厚度的深度。
图3是根据一个实施例的镍-阻挡层-金(NBG)的表面处理的理想的侧面截面图。金属(M)层102由衬底104支撑。在一个实例中,衬底是诸如FR4的玻璃纤维增强的环氧树脂,并且金属M是铜(Cu)。铜可以在约10至100微米厚之间。在另一个实例中,衬底是诸如单晶硅(Si)、玻璃或玻璃上半导体的半导体,并且金属M是铝(Al)。
镍(Ni)层106设置在金属M的表面上。镍层通常可以是无电镀镍,其包含磷(P)或硼(B)组分。在常规的掺磷无电镀镍中,磷含量通常可以是8-9wt%。镍层106通常可以是约3-6微米厚。
阻挡层包括在镍106表面上的独立沉积的含氮分子或分子片段。应理解阻挡层通常沉积到仅一个或几个原子厚度的深度。金层110可以沉积在镍层106和阻挡层上。根据一些实施例,金层通过浸渍涂覆来沉积,其导致仅一个或几个原子的深度。
阻挡层包含在镍106表面上的独立沉积的含氮分子或分子片段。应理解阻挡层通常沉积到仅一个或几个原子厚度的深度。
根据一些实施例,胺基团化学吸附到位于晶间边界(深裂缝)112处的镍原子以使得微结构更平滑。考虑平滑的微结构在随后施加浸金层110期间减少电化超腐蚀。与常规ENIG表面处理相比,考虑到降低的超腐蚀降低了从铜层102迁移铜的趋势,降低了涂层孔隙率,并降低了可焊性退化的风险。
应理解,阻挡层钝化表面处和晶间边界112处的镍层106的原子和镍层106的深裂缝。阻挡层可以通过胺的化学吸附来沉积,从而使微结构平滑化。
根据发明人的假设,在镍表面的存在下,胺分子可以解离成NH-阴离子物种。在晶间边界112处胺的化学吸附和微结构的平滑化减少或消除了电化超腐蚀(又称“黑色焊盘”)并获得鲁棒的焊点。结果,可以减少或消除电子组件中焊点的脆断和/或元件掉落,从而导致根据本文公开内容制造的电子设备的提高的可靠性。
实施例包含具有8-9wt%的磷含量的无电镀镍层。发明人考虑到本文的实施例可以允许无电镀镍层中P含量的减少。发明人进一步考虑在无电镀镍层中可以包含低浓度的包括锌和/或锡的附加金属,该金属可以与本文的实施例协同地相互作用以产生一种或多种改进的性质,包含改进的抗冲击性、屈服、可追溯性、振动,接头剪切强度和/或接头延展性。
图4是在镍106上方包含焊球402的组件的侧面截面图。金属间层406位于焊料402和镍层106之间。根据一个实施例,设置镍层,铜焊盘和电介质衬底。参照图1和图2,在焊料回流过程中,金层溶解到焊料中,金属间层22形成在无电镀镍层12和焊料24之间。金属间化合物的组合物包含焊料(锡合金)、无电镀镍和碳。金属间层使焊点展示出期望的延展性并抵抗脆断。
图5是示出根据一个实施例的用于制造包含NBG表面抛光的电路组件的方法500的流程图。从步骤502开始,接收衬底,衬底表面的至少一部分包含导电材料层。在一个实施例中,衬底可以包含在至少一个表面上具有诸如铜(Cu)的导体的介电层,例如玻璃纤维增强的环氧树脂(FR4)或聚酰亚胺。为了描述的目的,假设接收的衬底已经被清洁,例如通过机械研磨然后进行溶剂清洗,并且被干燥。在另一个实施例中,在表面上衬底包含具有诸如铝(Al)的导体的半导体,诸如硅晶片。
进行到步骤504,将掩模施加到电路衬底的表面,特别是导体。选择掩模(例如,设计的或布置的)以定义单独的导电体。在施加掩模之后,导体的暴露表面可以被预处理。预处理可包含浸渍、旋涂、喷涂或以其他方式施加选择的材料,以在随后的步骤508期间吸引或接收至少镍原子。
例如,铜导体的预处理可以包含将钯(Pd)从溶液浸渍涂覆到导体表面上的薄层中。
示例过程包含以下步骤:
1.使用压缩空气从元件上清除灰尘和金属颗粒。
2.将元件浸入丙酮浴中60秒。
3.取出后立即浸入70%异丙醇溶液中15秒。
4.在流水下冲洗掉异丙醇。
5.将元件浸入去离子(DI)水浴并超声处理180秒。
6.从DI水浴中取出元件,并用压缩空气除去多余的水,直到没有水滴留下。
7.将元件浸入17.5%的硝酸溶液中60秒。
8.将元件浸入5%硫酸溶液中30秒。
9.从5%硫酸溶液中取出元件并在流动的DI水下冲洗。
10.将元件浸入DI水浴并超声处理180秒。
11.从DI水浴中取出元件并用压缩空气彻底干燥。
12.立即用无绒布完全覆盖元件,直到准备好进行激活和镀覆步骤。
13.使用钯基溶液(0.1g/L PdCl2,1ml/L HCl(37%浓缩物))(按供应的浓度使用)(在室温下使用),将元件短暂浸入含有Pd溶液的浴槽中。只能将元件浸入非常短暂的时间,2秒或更短时间,并立即取出。
14.取出后,立即将元件浸入DI水浴中,在浴槽中搅拌元件10秒以从元件表面除去大部分剩余的Pd溶液。
15.将元件从浴槽中取出,并用压力下的喷射水彻底冲洗,详细检查元件的每个部分。
16.重复这种彻底的冲洗。彻底的冲洗是至关重要的。元件表面不应有残留物。
在另一个例子中,铝导体的预处理可以包含从锌酸盐溶液中将锌(Zn)浸渍涂覆到导体表面上的薄层上。浸渍涂覆是较贵金属原子对较不贵金属原子的原子取代,其中镀覆厚度受表面上较不贵金属原子的空间可用性限制。与没有材料存在的区域相比,表面上Pd或Zn的存在限定了对后续镀覆金属具有更高亲和力的导体区域。如本文所用,涂覆到导体上的材料(例如,Pd或Zn)可以被称为活化剂。
进行到步骤506,可以清洁衬底以去除掩模。步骤506是在方法300中所示的步骤之间通常发生清洁的典型步骤。为了清楚起见,省略了具体步骤之间的具体清洁过程的描述。清洁可以包括酸洗、碱洗、机械磨蚀、超声处理、溶剂清洗,UV暴露、热暴露等中的一个或多个,然后冲洗并干燥。
进行到步骤508,将镍镀在涂覆有预处理材料的导体表面的区域上。因此,将镍施加到由掩模限定的导电体区域上。例如,镍(与掺杂剂,如果无电镀的话)可以施加到约3-6微米的厚度。
根据一个实施例,施加镍包含将无电镀镍施加到活化剂,该活化剂施加到导电材料上。
在另一个实施例中,镍可以被电镀到导体上。例如,镍可以通过掩模电镀。在使用电镀的情况下,步骤504可以基本上由施加掩模组成,并且步骤504的预处理部分可以被省略。
无电镀镍通常包含与镍配合的掺杂剂,以自我催化涂覆过程。在一些实施例中,掺杂剂包含硼(B)。在一些实施例中,掺杂剂包含磷(P)。磷掺杂的无电镀镍可以使用NiSO4化学方法通过将衬底保持在水溶液中来施加,该水溶液包含20-40g/L范围内的(NiSO4·6H2O)、20-30g/L范围内的次磷酸钠、15-25g/L范围内的柠檬酸钠和1-5mg/L范围内的硫脲。
在步骤509中,获得携带反应性含氮分子的水溶液。步骤509可以包含购买溶液或者可以包含制作溶液。
在一个实施例中,在步骤509中制备反应性含氮分子的水溶液可以包含在去离子水中制备芳香胺的溶液。在另一个实施例中,在步骤509中制备反应性含氮分子的水溶液可以包含制备脂族胺的水溶液。制备脂族胺的水溶液可以包含制备0.1至1摩尔1,4-二胺丁烷的溶液或制备0.1至1摩尔二亚乙基三胺的溶液。制备反应性含氮分子的水溶液可以包含制备氢氧化铵的水溶液。在另一个实施例中,制备反应性含氮分子的水溶液包含制备胺取代的硅氧烷的水溶液。在步骤509中制备反应性含氮分子的水溶液可以包含将pH值调节至大约12。氢氧化铵可用于调节pH值。
对于使用可溶性较小的含氮分子的实施例,在步骤509中制备水溶液可以包含向水中加入乳化剂和/或去污剂。
反应性含氮分子可以包括以下一种或多种:
R1-NH2,NH2-R1-NH2,NH2-R1-NH2NH2,NH2-R1-NH2-R2-NH2,R1-N-R2H,R1-N-R2R3,A1-NH2,NH2-A1-NH2,NH2-A1-NH2NH2,A1-N-A2H,A1-N-A2A3,A1-N-R1H,A1-N-A2R1,A1-N-R1R2,NH2-取代的硅氧烷和胺取代的硅氧烷;
其中R1是C18或更小的第一取代的或未取代的脂族基团;
其中R2是C18或更小的第二取代的或未取代的脂族基团;
其中R3是C18或更小的第三取代的或未取代的脂族基团;
其中A1是取代的或未取代的芳族基团;
其中A2是第二取代的或未取代的芳族基团;以及
其中A3是第三取代的或未取代的芳族基团。
在一个实施例中,反应性含氮分子包含1至6个碳原子。在另一个实施例中,含氮分子包含3至5个碳原子。在一个实施例中,含氮分子包含1,4-二胺丁烷。在一个实施例中,含氮分子包含二亚乙基三胺。
进行到步骤510,将阻挡层施加到镍上,阻挡层包含至少一部分反应性含氮分子。在一个实施例中,步骤509和510可以包含制备反应性含氮分子的水溶液并将反应性含氮分子的水溶液暴露于镍。将阻挡层施加到镍上可以包含将水溶液的温度保持在30-80℃,同时将反应性含氮分子的水溶液暴露于镍5-40分钟。
在一个替代实施例中,将阻挡层施加到镍上可以包含将反应性含氮分子溶解在蒸气中,并将含氮分子从蒸气中凝结出到达镍上。例如,1,4-二胺丁烷之类的分子可以由丁烷蒸气携带并可以从其凝结到镍上。
根据另一个实施例,通过固体或粘性液体层(例如携带含氮分子客体的聚酯负载的聚甲基丙烯酸甲酯主体聚合物)的粘附,然后剥离聚酯(可选地,通过施加热量辅助),将阻挡层从高分子量基体沉积到镍层上。
在替代实施例中,将阻挡层施加到镍可以包括将反应性含氮分子嵌入由转移膜支撑的聚合物基体中,将转移膜的聚合物基体侧放置成靠近镍表面,并且施加热量到转移膜以使含氮分子扩散出聚合物基体并在镍上凝结。
可选地,方法500可以包含步骤512,其中金层被施加在阻挡层上,使得单独的导电体具有在导电材料上的镍-阻挡层-金(NBG)表面处理。在一个实施例中,将金浸渍涂覆在镍和设置在其上的阻挡层上。在另一个实施例中,在镍上方电镀金并在其上设置阻挡层。
进行到步骤514,蚀刻未承载所施加的镍和阻挡层的暴露的导电材料的区域,以形成单独的导电体。在金被施加到阻挡层的一个实施例中,在施加金层之前进行蚀刻。在另一个实施例中,在施加金层之后进行蚀刻。
进行到可选步骤516,可以在导电体(包含导电层,镍,阻挡层和可选的金)上施加焊膏图案,与元件安装焊盘对应的焊膏图案,以及可以挑选多个表面安装元件并放置在元件安装焊盘上。焊膏可以回流以在导电体和表面安装元件之间形成各自的焊点以形成电路,并冷却和清洁电路。
根据方法500(NBG化学方法)制造的焊点的特征在于,与没有阻挡层(ENIG化学方法)制造的焊点相比,具有高磷浓度的区域减少。根据方法500(NBG化学方法)制造的焊点的特征在于,与没有阻挡层制成的焊点(ENIG化学方法)相比,更多的金属间化合物的限制区域。考虑到根据方法500(NBG化学方法)制造的焊点的特征在于,与没有阻挡层(ENIG化学方法)制造的焊点相比脆断的可能性降低。
图6是根据一个实施例的分段NBG表面处理的透射电子显微照片600。特别重要的是连续的金层110。金层的厚度约为50纳米。(相比之下,传统ENIG表面处理的类似图像中的金层显示金层不连续,部分彼此垂直移位。)薄的金属间区域602位于金层110的正下方。无电镀镍层106延伸到图像的底部。
图6表示根据一个实施例的包含无电镀镍(Ni-P)-阻挡层-金(Au)表面处理的物质的组合物,该表面处理位于包括至少一种附加金属的导体层的上方。该至少一种附加金属可以包含铜和/或铝。
表面处理被表示为导电焊盘结构,相对于无电镀镍-浸金(ENIG)表面抛光和其表面附近更受限的金浓度,在其表面附近具有增加的碳浓度。如SEM部分所示,物质的组合物展示基本上连续的Au层。如图6所示,物质的组合物可以进一步包含Au和Ni-P之间的连续金属间层。
根据一个实施例,阻挡层由携带至少一种反应性含氮分子的水溶液沉积而成。由其沉积阻挡层的水溶液可以进一步包含氢氧化铵并且可以被pH值平衡至约12。在一些实施例中,水溶液包含乳化剂。
根据一个实施例,阻挡层由携带至少一种反应性含氮分子的水溶液沉积而成,含氮分子对应于由以下组成的组:R1-NH2,NH2-R1-NH2,NH2-R1-NH2NH2,NH2-R1-NH2-R2-NH2,R1-N-R2H,R1-N-R2R3,A1-NH2,NH2-A1-NH2,NH2-A1-NH2NH2,A1-N-A2H,A1-N-A2A3,A1-N-R1H,A1-N-A2R1,A1-N-R1R2,NH2-取代的硅氧烷和胺取代的硅氧烷;
其中R1是C18或更小的第一取代的或未取代的脂族基团;
其中R2是C18或更小的第二取代的或未取代的脂族基团;
其中R3是C18或更小的第三取代的或未取代的脂族基团;
其中A1是取代的或未取代的芳族基团;
其中A2是第二取代的或未取代的芳族基团;以及
其中A3是第三取代的或未取代的芳族基团。
在一些实施例中,所述含氮分子总共包含1至6个碳原子。在一些实施例中,所述含氮分子包含3至5个碳原子。
根据一个实施例,含氮分子包含1,4-二胺丁烷。在另一个实施例中,含氮分子包括二亚乙基三胺。
图7是根据一个实施例制造的无电镀镍上的阻挡层表面的SEM图像。图8是与图7相同放大倍数的无电镀镍表面的SEM图像。通过比较图7和图8,可以容易地看到由阻挡层引起的表面光滑度的改善。
ENIG表面处理展现出相对高的无电镀镍晶界表现,对应于以ENIG电极表面上的无电镀镍片为特征的粗糙表面。无电镀镍的粗糙表面的部分位于中间金单层附近或上方。为了比较,NBG表面处理中的金层是连续的,如可以在图6中看到的那样。
图9是对应于图7中所示的阻挡层的表面的表面轮廓测定仪输出。图10是对应于图8中所示的无电镀镍层表面的表面轮廓测定仪输出。使用相同的参数制作表面轮廓。图9和图10使得阻挡层提供的表面光滑度的改善很清楚。
图11-14是根据各自表面处理的表面下方的深度,对应于碳、氮、氧和金的浓度的辉光放电发射光谱仪(GDOES)图形。每张图比较了NBG表面处理中的物种浓度与ENIG表面处理的浓度。
图15是示出包含在电子产品中的电路1504上的NBG表面抛光示踪1502的示图1500。本发明人考虑到本文所述的BLON和ENIG表面抛光可以显著地改善使用它们的电子产品的跌落测试结果。
虽然本文已经公开了不同的方面和实施例,但是可以考虑其他方面和实施例。在此公开的不同的方面和实施例是用于说明的目的,而不是想要限制,真正的范围和精神由权利要求书指示。
Claims (1)
1.一种制造电路组件的方法,包括:
接收衬底,所述衬底的至少一部分包含导电材料层;
将掩模施加到所述衬底的表面,所述掩模被选择以限定导电体区域,所述导电体区域进一步限定单独的导电体;
将阻挡层施加到所述导电体上,所述阻挡层包含至少一部分反应性含氮分子;
在所述阻挡层上方施加金层,使得所述单独的导电体包括在所述导电材料层上方的阻挡层-金(NBG)表面处理。
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