CN101584052A - 发光器件中的电流分配 - Google Patents
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
本发明公开了一种发光器件,包括:多个外延层,其包含有源层;反射层和欧姆接触中的至少一者,其处于所述外延层的第一侧;传导金属层,其处于所述外延层的第二侧,并具有光发射表面。端子处于所述光发射表面上。所述端子包含用于将电流分散开并且使得其对于光输出的影响最小化的阵列。所述阵列可以包含焊盘、外部部分以及连接所述焊盘和所述外部部分的接合部分;所述外部部分和所述接合部分用于电流分散。
Description
技术领域
本发明涉及发光器件中的电流分配,具体而言(但非排他地)涉及用于分布电流以使得光输出最大化的设备。
相关申请的引用
参考我们早先的新加坡专利申请20506301-1(2005年9月29日递交),其内容通过引用被包含在本文中,并应视为其全部内容被在此公开。
背景技术
在例如发光二极管和激光二极管的大多数发光器件中,焊盘占据发光表面的表面积的大约15%。在焊盘所在位置,不能发光。
并且,因为电流从焊盘流到有源区域,并且将沿最小阻抗的路径(在均一材料中,通常是最短的路径)流动,所以最大电流量(因此最大光输出)处于焊盘下方。这导致光输出显著减小。
发明内容
根据第一优选的方面,提供了一种发光器件,包括:多个外延层,其包含有源层;反射层和欧姆接触中的至少一者,其处于所述外延层的第一侧;传导金属层,其处于所述外延层的第二侧,并具有光发射表面。端子处于所述光发射表面上。所述端子包含用于将电流分散开并且使得其对于光输出的影响最小化的阵列。
所述阵列可以包含焊盘、外部部分以及连接所述焊盘和所述外部部分的接合部分;所述外部部分和所述接合部分用于电流分散。所述外部部分可以处于所述光发射表面的周边或邻近所述光发射表面的周边。所述接合部分可以包括多个连接所述焊盘和所述外部部分的辐条。
在所述阵列和所述光发射表面之间可以存在第二反射层。或者,第二反射层可以处于所述光发射表面中的沟槽的底部。
根据第二优选的方面,提供了一种用于制作发光器件的方法。所述发光器件具有:包含有源层的多个外延层;处于所述外延层的第一侧的反射层;以及处于所述外延层的第二侧的传导金属。所述方法包括在所述传导金属的光发射表面上形成端子,所述端子包含用于使电流分散开并且使得其对于光输出的影响最小化的阵列。
形成阵列可以通过形成焊盘、外部部分以及电连接所述焊盘和所述外部部分的接合部分来进行;所述外部部分和所述接合部分用于电流分散。所述外部部分可以处于所述光发射表面的周边或邻近所述光发射表面的周边。所述接合部分可以包括多个连接所述焊盘和所述外部部分的辐条。
所述方法还可以包括在所述光发射表面上形成第二反射层,然后在所述第二反射层上形成所述阵列。
或者,所述方法还可以包括在所述光发射表面中形成沟槽,在所述沟槽的底部形成第二反射层,所述阵列被形成在所述第二反射层上。
附图说明
为了全面理解本发明并且容易将本发明投入实用,现在将通过非限制性示例描述本发明的仅优选实施例,该描述将参考说明性的附图进行。
在附图中:
图1是发光器件的示意性侧视图;
图2是发光器件的优选实施例的示意性侧视图;
图3是图2的器件的静止全景图;
图4是沿图3上的截线并沿箭头4-4的方向的垂直剖视图;
图5是图4的沟道的放大视图;
图6是图5的布置的替代方案;
图7-图13是示出了图2-图4的器件的制造过程并与图4相对应的一系列视图。
具体实施方式
首先参考图1,图1示出了发光器件101,其例如为发光二极管或激光二极管,并且在包括有源区域102在内的多个外延层的第一侧具有反射层和/或欧姆接触103。传导金属层104处于外延层的第二侧上。反射层103可以处于外延层上,而欧姆接触可以处于反射层上,或欧姆接触可以处于外延层上,而反射层103可以处于欧姆接触上。也可以仅仅存在反射层和欧姆接触中的一个。焊盘105设置在光输出表面107上。电流在金属层104中通过如图1上的虚线所示的路径流到有源层102。如可以看到的,最大的电流集中在焊盘105下方。这意味着由有源层102发出的最大的光(如实线所示)也将集中在焊盘105下方。这样的光将被焊盘105反射回金属层104中。这显著减小了光输出。
图2-4示出了优选实施例,其中相似的标号被用于相似的部件,但是前缀数字“1”被变为“2”。在此,焊盘105被端子层215代替。
端子层215包括导电材料(优选与焊盘205相同的材料)的阵列214,阵列214与焊盘205和光输出表面207两者电连接。阵列214被分布在整个表面207上,使得电流将以散布或分布方式从端子层215流向有源区域202。
阵列214优选具有焊盘205作为其中心,因此阵列214的分布在表面207上较均匀。并且,较之焊盘205,阵列214优选具有较小的高度。
如图所示,阵列214包含处于表面207的周边或在表面207的周边邻近的外部部分206。这提供了在有源区域202的周边和邻近有源区域202的周边的光发射。将外部部分206和焊盘205电学并物理连接的是接合部分208,即在此情况下,从焊盘205延伸到外部部分206的四个等间隔的径向“辐条”。所有辐条208优选是相同的,并且更优选具有与外部部分206相同的高度和宽度。虽然以十字形状示出了四个辐条208,但是可以具有任意数量的辐条,例如1、2、3、4、5、6等。
在辐条208和外部部分206之间是光发射开口209,用于从光输出表面207的光发射。
外部部分206和/或每个辐条208或阵列214可以位于形成在光输出表面207中的沟槽211中。沟槽211在其底部213可以具有反射层212,使得由在阵列214下方的有源区域202传播的光将被反射层212更有效地反射。反射层212可以具有漫射表面,使得光将被以非垂直的角度从其反射。反射层212是导电的,以使得电流可以从阵列214通到有源区域202。反射层212优选具有与阵列214相同的处于表面207上的形状和尺寸。
如图6所示,可以不使用沟槽211,并且反射层212可以被直接施加到阵列214下方的光输出表面207。
图7-13示出了工艺过程。这些是相关申请的图11-17,并且是在原蓝宝石衬底4被去除之后的工艺步骤。
如图8所示,在去除蓝宝石衬底4之后,器件由沟槽彼此隔离,所述沟槽利用在刻蚀过程中保护n型GaN层3的区域的光刻胶层6(d)如图8-10所示沿着平顶的边缘从新暴露的表面13进行刻蚀而成。
或者,n型层3的最下方的表面13可以在与光刻胶12对齐的位置处被劈开,并且将多个管芯分离。这对于激光二极管是有利的,因为n型层3的暴露侧表面是基本平行的,由此导致大量的总内反射。这充当光放大系统,用于提高和定向光输出。
在SiO2层8、n型GaN层3的侧面和n型GaN层3的中心的暴露表面上施加第五光刻胶层6(e)之后进行盘刻蚀,由此形成n型GaN层3的凸起部分14和凹入部分15(图9(a)和9(b))。
光刻胶6(e)被去除,并且在n型GaN层3和SiO2层8的外周的暴露表面上施加又一光刻胶6(f),由此留下用于管芯分离的间隙16。进行穿过间隙16、SiO2层8、晶种层11的刻蚀(图10),直至厚的光刻胶12的末端被暴露。去除光刻胶6(f)。
在从SiO2层8的边缘一直到n型GaN层3的中心附近的整个暴露的下表面上施加最后的光刻胶层6(g),但是在n型GaN层3的中心保留中心间隙17(图11)。
然后,将n型金属的一个或多个层18的阵列214施加到光刻胶层6(g)上,其中在n型GaN层3的中心的间隙17处的层18被直接施加到GaN层3(图12)。附着有层18的光刻胶层6(g)被去除,留下附着到n型GaN层3的中心17(间隙17先前所在位置)的层18。
这样,晶种层11、10、9以及铜层9(a)充当用于提高光输出的反射器,而铜层9(a)作为一个端子,由此不会干扰光输出。第二端子是处于n型GaN层3上的阵列214方式的层18,并且其是处于层3的中心和/或该中心周围的阵列,由此使得其对光输出的影响最小化并增加了电流的分散。
尽管在前面的描述中已经描述了本发明的优选实施例,但是本领域技术人员应当理解,可以对设计或构造的细节进行许多变化或修改,而不脱离本发明的范围。
Claims (12)
1.一种发光器件,包括:
(a)多个外延层,其包含有源层;
(b)反射层和欧姆接触中的至少一者,其处于所述外延层的第一侧;
(c)传导金属层,其处于所述外延层的第二侧,并具有光发射表面;以及
(d)处于所述光发射表面上的端子,所述端子包含用于将电流分散开并且使得其对于光输出的影响最小化的阵列。
2.根据权利要求1所述的发光器件,其中所述阵列包含焊盘、外部部分以及连接所述焊盘和所述外部部分的接合部分,所述外部部分和所述接合部分用于电流分散。
3.根据权利要求2所述的发光器件,其中所述外部部分处于所述光发射表面的周边或邻近所述光发射表面的周边。
4.根据权利要求2或3所述的发光器件,其中所述接合部分包括多个连接所述焊盘和所述外部部分的辐条。
5.根据权利要求1至4中任一项所述的发光器件,其中在所述阵列和所述光发射表面之间存在第二反射层。
6.根据权利要求2至4中任一项所述的发光器件,其中所述第二反射层处于所述光发射表面中的沟槽的底部。
7.一种用于制作发光器件的方法,所述发光器件包括:包含有源层的多个外延层;处于所述外延层的第一侧的反射层;处于所述外延层的第二侧的传导金属,所述传导金属具有光发射表面,所述方法包括:
在所述传导金属的所述光发射表面上,形成端子,所述端子包含用于将电流分散开并且使得其对于光输出的影响最小化的阵列。
8.根据权利要求7所述的方法,其中通过形成焊盘、外部部分以及电连接所述焊盘和所述外部部分的接合部分,来形成所述阵列;所述外部部分和所述接合部分用于电流分散。
9.根据权利要求8所述的方法,其中所述外部部分处于所述光发射表面的周边或邻近所述光发射表面的周边。
10.根据权利要求8或9所述的方法,其中所述接合部分包括多个连接所述焊盘和所述外部部分的辐条。
11.根据权利要求7至10中任一项所述的方法,还包括在所述光发射表面上形成第二反射层,然后在所述第二反射层上形成所述阵列。
12.根据权利要求8至10中任一项所述的方法,还包括在所述光发射表面中形成沟槽,在所述沟槽的底部形成第二反射层,所述阵列被形成在所述第二反射层上。
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2007
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- 2007-09-04 US US12/440,019 patent/US8124994B2/en not_active Expired - Fee Related
- 2007-09-04 TW TW096133152A patent/TWI440209B/zh not_active IP Right Cessation
- 2007-09-04 WO PCT/SG2007/000288 patent/WO2008030188A1/en active Application Filing
- 2007-09-04 CN CNA2007800410644A patent/CN101584052A/zh active Pending
- 2007-09-04 JP JP2009527326A patent/JP2010503229A/ja active Pending
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CN111987587A (zh) * | 2019-05-21 | 2020-11-24 | 台湾积体电路制造股份有限公司 | 半导体芯片与垂直腔表面发射激光器装置及其形成方法 |
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TW200822402A (en) | 2008-05-16 |
WO2008030188A1 (en) | 2008-03-13 |
KR20090057409A (ko) | 2009-06-05 |
US8124994B2 (en) | 2012-02-28 |
US20100117107A1 (en) | 2010-05-13 |
SG140512A1 (en) | 2008-03-28 |
JP2010503229A (ja) | 2010-01-28 |
TWI440209B (zh) | 2014-06-01 |
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