CN101515554B - 半导体器件的制造方法、半导体器件以及配线基板 - Google Patents

半导体器件的制造方法、半导体器件以及配线基板 Download PDF

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Publication number
CN101515554B
CN101515554B CN2009100069877A CN200910006987A CN101515554B CN 101515554 B CN101515554 B CN 101515554B CN 2009100069877 A CN2009100069877 A CN 2009100069877A CN 200910006987 A CN200910006987 A CN 200910006987A CN 101515554 B CN101515554 B CN 101515554B
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semiconductor device
semiconductor chip
modification
terminal electrode
metal film
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CN101515554A (zh
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堀内章夫
宫坂俊次
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Shinko Electric Industries Co Ltd
Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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CN2009100069877A 2008-02-18 2009-02-18 半导体器件的制造方法、半导体器件以及配线基板 Active CN101515554B (zh)

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JP2008036235 2008-02-18
JP2008-036235 2008-02-18
JP2008036235A JP5224845B2 (ja) 2008-02-18 2008-02-18 半導体装置の製造方法及び半導体装置

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US (2) US8217509B2 (enExample)
JP (1) JP5224845B2 (enExample)
KR (1) KR101602958B1 (enExample)
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TW (1) TWI497617B (enExample)

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US8319318B2 (en) * 2010-04-06 2012-11-27 Intel Corporation Forming metal filled die back-side film for electromagnetic interference shielding with coreless packages
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JP2012146963A (ja) * 2010-12-20 2012-08-02 Shinko Electric Ind Co Ltd 半導体パッケージの製造方法及び半導体パッケージ
JP2013114415A (ja) 2011-11-28 2013-06-10 Elpida Memory Inc メモリモジュール
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TWI515841B (zh) * 2013-08-02 2016-01-01 矽品精密工業股份有限公司 半導體封裝件及其製法
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JP6511695B2 (ja) * 2015-01-20 2019-05-15 ローム株式会社 半導体装置およびその製造方法
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JP6971052B2 (ja) * 2017-04-20 2021-11-24 京セラ株式会社 半導体装置の製造方法および半導体装置
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JP2019208045A (ja) * 2019-07-17 2019-12-05 太陽誘電株式会社 回路基板
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TWI808618B (zh) * 2022-01-20 2023-07-11 大陸商廣東則成科技有限公司 用於嵌入式晶片的封裝製程
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US9048242B2 (en) 2015-06-02
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