CN101341579B - 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法 - Google Patents

具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法 Download PDF

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CN101341579B
CN101341579B CN2006800457152A CN200680045715A CN101341579B CN 101341579 B CN101341579 B CN 101341579B CN 2006800457152 A CN2006800457152 A CN 2006800457152A CN 200680045715 A CN200680045715 A CN 200680045715A CN 101341579 B CN101341579 B CN 101341579B
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CN101341579A (zh
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约瑟夫·尼尔·梅里特
伊格尔·桑金
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PI Corp
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SS SC IP LLC
Semisouth Laboratories Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
CN2006800457152A 2005-12-05 2006-12-04 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法 Expired - Fee Related CN101341579B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/293,261 US7314799B2 (en) 2005-12-05 2005-12-05 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
US11/293,261 2005-12-05
PCT/US2006/046180 WO2007067458A1 (en) 2005-12-05 2006-12-04 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210055560.8A Division CN102751320B (zh) 2005-12-05 2006-12-04 半导体器件

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CN101341579A CN101341579A (zh) 2009-01-07
CN101341579B true CN101341579B (zh) 2012-03-21

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CN2006800457152A Expired - Fee Related CN101341579B (zh) 2005-12-05 2006-12-04 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法
CN201210055560.8A Expired - Fee Related CN102751320B (zh) 2005-12-05 2006-12-04 半导体器件

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US (3) US7314799B2 (enExample)
EP (1) EP1969617B1 (enExample)
JP (1) JP5424192B2 (enExample)
KR (1) KR101318041B1 (enExample)
CN (2) CN101341579B (enExample)
AU (1) AU2006322108B2 (enExample)
CA (1) CA2632233A1 (enExample)
NZ (1) NZ568487A (enExample)
WO (1) WO2007067458A1 (enExample)

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US7553718B2 (en) * 2005-01-28 2009-06-30 Texas Instruments Incorporated Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps
US7314799B2 (en) 2005-12-05 2008-01-01 Semisouth Laboratories, Inc. Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
US7648898B2 (en) * 2008-02-19 2010-01-19 Dsm Solutions, Inc. Method to fabricate gate electrodes
JP5324157B2 (ja) * 2008-08-04 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN101901767B (zh) * 2009-05-26 2011-12-14 上海华虹Nec电子有限公司 获得垂直型沟道高压超级结半导体器件的方法
KR20120032531A (ko) * 2009-06-19 2012-04-05 에스에스 에스시 아이피, 엘엘시 이온주입 없이 ｖｊｆｅｔ와 ｂｊｔ를 제조하는 방법 및 그 장치
JP2011119512A (ja) * 2009-12-04 2011-06-16 Denso Corp 半導体装置およびその製造方法
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
US8716078B2 (en) * 2012-05-10 2014-05-06 Avogy, Inc. Method and system for a gallium nitride vertical JFET with self-aligned gate metallization
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016032014A (ja) * 2014-07-29 2016-03-07 日本電信電話株式会社 窒化物半導体装置の製造方法
CN105070767B (zh) * 2015-08-05 2018-04-20 西安电子科技大学 一种基于碳基复合电极的高温SiC JFET器件
CN105097456B (zh) * 2015-08-24 2018-09-11 泰科天润半导体科技（北京）有限公司 一种用于碳化硅器件的自对准方法
CN108292593B (zh) * 2015-09-30 2023-02-17 东京毅力科创株式会社 使用极紫外光刻对衬底进行图案化的方法
CN107681001B (zh) * 2017-07-24 2020-04-07 中国电子科技集团公司第五十五研究所 一种碳化硅开关器件及制作方法
CN116544282B (zh) * 2023-07-06 2024-04-09 深圳平创半导体有限公司 碳化硅结型栅双极型晶体管器件及其制作方法

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US5350669A (en) * 1994-01-19 1994-09-27 Minnesota Mining And Manufacturing Company Silver-carboxylate/1,2-diazine compounds as silver sources in photothermographic and thermographic elements
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JPH08306700A (ja) 1995-04-27 1996-11-22 Nec Corp 半導体装置及びその製造方法
JPH09172187A (ja) * 1995-12-19 1997-06-30 Hitachi Ltd 接合型電界効果半導体装置およびその製造方法
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JP2003069039A (ja) * 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置およびその製造方法
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Patent Citations (1)

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US6767783B2 (en) * 2001-07-12 2004-07-27 Mississippi State University-Research And Technology Corporation (Rtc) Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation

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Publication number Publication date
US20070275527A1 (en) 2007-11-29
NZ568487A (en) 2011-07-29
WO2007067458A1 (en) 2007-06-14
CN102751320A (zh) 2012-10-24
CA2632233A1 (en) 2007-06-14
US8729628B2 (en) 2014-05-20
US7314799B2 (en) 2008-01-01
CN102751320B (zh) 2015-05-13
EP1969617A1 (en) 2008-09-17
CN101341579A (zh) 2009-01-07
AU2006322108A1 (en) 2007-06-14
EP1969617B1 (en) 2015-02-25
KR101318041B1 (ko) 2013-10-14
US20080061362A1 (en) 2008-03-13
US20120305994A1 (en) 2012-12-06
KR20080075025A (ko) 2008-08-13
JP2009518862A (ja) 2009-05-07
AU2006322108B2 (en) 2011-04-14
JP5424192B2 (ja) 2014-02-26

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