CN105097456B - 一种用于碳化硅器件的自对准方法 - Google Patents
一种用于碳化硅器件的自对准方法 Download PDFInfo
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- CN105097456B CN105097456B CN201510522447.XA CN201510522447A CN105097456B CN 105097456 B CN105097456 B CN 105097456B CN 201510522447 A CN201510522447 A CN 201510522447A CN 105097456 B CN105097456 B CN 105097456B
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- Prior art keywords
- layer
- groove
- exposed
- medium layer
- alignment method
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- 238000000034 method Methods 0.000 title claims abstract description 43
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 238000001312 dry etching Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910003978 SiClx Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Rolling Contact Bearings (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201510522447.XA CN105097456B (zh) | 2015-08-24 | 2015-08-24 | 一种用于碳化硅器件的自对准方法 |
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CN201510522447.XA CN105097456B (zh) | 2015-08-24 | 2015-08-24 | 一种用于碳化硅器件的自对准方法 |
Publications (2)
Publication Number | Publication Date |
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CN105097456A CN105097456A (zh) | 2015-11-25 |
CN105097456B true CN105097456B (zh) | 2018-09-11 |
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CN201510522447.XA Active CN105097456B (zh) | 2015-08-24 | 2015-08-24 | 一种用于碳化硅器件的自对准方法 |
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CN (1) | CN105097456B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449418B (zh) * | 2016-09-13 | 2019-07-16 | 扬州扬杰电子科技股份有限公司 | 一种获得清洁沟槽侧壁的方法 |
CN110706874B (zh) * | 2019-10-21 | 2021-06-01 | 中北大学 | 一种高可靠衰减电阻的制备方法 |
CN111489962B (zh) * | 2020-04-17 | 2023-09-26 | 重庆伟特森电子科技有限公司 | 一种厚底沟槽的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101341579A (zh) * | 2005-12-05 | 2009-01-07 | 半南实验室公司 | 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法 |
CN104319257A (zh) * | 2014-10-29 | 2015-01-28 | 上海华力微电子有限公司 | 一种浅沟槽隔离结构的制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6977184B1 (en) * | 2001-10-31 | 2005-12-20 | Lam Research Corporation | Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring |
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2015
- 2015-08-24 CN CN201510522447.XA patent/CN105097456B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101341579A (zh) * | 2005-12-05 | 2009-01-07 | 半南实验室公司 | 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法 |
CN104319257A (zh) * | 2014-10-29 | 2015-01-28 | 上海华力微电子有限公司 | 一种浅沟槽隔离结构的制造方法 |
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Publication number | Publication date |
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CN105097456A (zh) | 2015-11-25 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Self-alignment method for silicon carbide devices Effective date of registration: 20190731 Granted publication date: 20180911 Pledgee: Haidian Beijing science and technology enterprise financing Company limited by guarantee Pledgor: GLOBAL POWER TECHNOLOGY (BEIJING) CO.,LTD. Registration number: 2019990000812 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230209 Granted publication date: 20180911 Pledgee: Haidian Beijing science and technology enterprise financing Company limited by guarantee Pledgor: GLOBAL POWER TECHNOLOGY (BEIJING) CO.,LTD. Registration number: 2019990000812 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |