CN101339526B - 检测由于读干扰而造成的位错误的存储系统及其方法 - Google Patents

检测由于读干扰而造成的位错误的存储系统及其方法 Download PDF

Info

Publication number
CN101339526B
CN101339526B CN2008102103350A CN200810210335A CN101339526B CN 101339526 B CN101339526 B CN 101339526B CN 2008102103350 A CN2008102103350 A CN 2008102103350A CN 200810210335 A CN200810210335 A CN 200810210335A CN 101339526 B CN101339526 B CN 101339526B
Authority
CN
China
Prior art keywords
page number
flash memory
virtual page
homepage
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008102103350A
Other languages
English (en)
Chinese (zh)
Other versions
CN101339526A (zh
Inventor
安世镇
金容铉
崔成业
金龙经
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101339526A publication Critical patent/CN101339526A/zh
Application granted granted Critical
Publication of CN101339526B publication Critical patent/CN101339526B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/30—Monitoring
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN2008102103350A 2007-06-19 2008-06-19 检测由于读干扰而造成的位错误的存储系统及其方法 Active CN101339526B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR60032/07 2007-06-19
KR1020070060032A KR100882841B1 (ko) 2007-06-19 2007-06-19 읽기 디스터번스로 인한 비트 에러를 검출할 수 있는메모리 시스템 및 그것의 읽기 방법

Publications (2)

Publication Number Publication Date
CN101339526A CN101339526A (zh) 2009-01-07
CN101339526B true CN101339526B (zh) 2012-11-28

Family

ID=40121683

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008102103350A Active CN101339526B (zh) 2007-06-19 2008-06-19 检测由于读干扰而造成的位错误的存储系统及其方法

Country Status (5)

Country Link
US (1) US8316278B2 (de)
KR (1) KR100882841B1 (de)
CN (1) CN101339526B (de)
DE (1) DE102008030264B4 (de)
TW (1) TWI476777B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8200887B2 (en) 2007-03-29 2012-06-12 Violin Memory, Inc. Memory management system and method
US9384818B2 (en) 2005-04-21 2016-07-05 Violin Memory Memory power management
US11010076B2 (en) 2007-03-29 2021-05-18 Violin Systems Llc Memory system with multiple striping of raid groups and method for performing the same
US9632870B2 (en) 2007-03-29 2017-04-25 Violin Memory, Inc. Memory system with multiple striping of raid groups and method for performing the same
KR101033465B1 (ko) * 2008-12-30 2011-05-09 주식회사 하이닉스반도체 플래쉬 메모리 장치 및 및 이를 위한 리드동작 제어 방법
KR101588293B1 (ko) * 2009-02-17 2016-01-26 삼성전자주식회사 비휘발성 메모리 장치의 읽기 방법
CN102576330B (zh) 2009-06-12 2015-01-28 提琴存储器公司 具有持久化无用单元收集机制的存储系统
KR101603099B1 (ko) * 2009-10-01 2016-03-28 삼성전자주식회사 불안정 메모리 셀 산포를 검출하는 메모리 시스템 및 상기 불안정 메모리 셀 산포 검출방법
US8892981B2 (en) * 2010-09-30 2014-11-18 Apple Inc. Data recovery using outer codewords stored in volatile memory
CN102779557B (zh) * 2011-05-13 2015-10-28 苏州雄立科技有限公司 集成memory模块的芯片数据检测校正方法及系统
KR20130049332A (ko) * 2011-11-04 2013-05-14 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
US8687421B2 (en) * 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
KR102089532B1 (ko) 2013-02-06 2020-03-16 삼성전자주식회사 메모리 컨트롤러, 메모리 시스템 및 메모리 시스템의 동작 방법
KR102164630B1 (ko) 2013-06-28 2020-10-12 삼성전자주식회사 메모리 컨트롤러 및 상기 메모리 컨트롤러의 동작 방법
US9372750B2 (en) * 2013-11-01 2016-06-21 Qualcomm Incorporated Method and apparatus for non-volatile RAM error re-mapping
JP6309258B2 (ja) * 2013-12-09 2018-04-11 エイブリック株式会社 データ読出装置及び半導体装置
KR102157875B1 (ko) * 2013-12-19 2020-09-22 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함한 메모리 시스템
KR102069274B1 (ko) * 2014-02-05 2020-01-22 삼성전자주식회사 메모리 제어 방법
US9299457B2 (en) * 2014-02-23 2016-03-29 Qualcomm Incorporated Kernel masking of DRAM defects
KR102148389B1 (ko) * 2014-06-11 2020-08-27 삼성전자주식회사 오버 라이트 동작을 갖는 메모리 시스템 및 그에 따른 동작 제어방법
KR102318561B1 (ko) 2014-08-19 2021-11-01 삼성전자주식회사 스토리지 장치, 스토리지 장치의 동작 방법
KR102128406B1 (ko) 2014-09-26 2020-07-10 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
KR102233074B1 (ko) 2014-10-08 2021-03-30 삼성전자주식회사 저장 장치 및 그것의 신뢰성 검증 방법
US9959059B2 (en) * 2014-10-20 2018-05-01 Sandisk Technologies Llc Storage error management
US9772901B2 (en) * 2015-05-08 2017-09-26 Nxp Usa, Inc. Memory reliability using error-correcting code
CN106708650B (zh) * 2015-11-17 2022-02-08 恩智浦美国有限公司 保护嵌入式非易失性存储器免受干扰
KR102449337B1 (ko) * 2015-12-14 2022-10-04 삼성전자주식회사 불휘발성 메모리 시스템의 동작 방법
KR102435873B1 (ko) 2015-12-18 2022-08-25 삼성전자주식회사 스토리지 장치 및 그것의 리드 리클레임 방법
CN108153481B (zh) * 2016-12-05 2021-08-03 北京兆易创新科技股份有限公司 一种nand的存储块回收方法和装置
US10204693B2 (en) * 2016-12-31 2019-02-12 Western Digital Technologies, Inc. Retiring computer memory blocks
KR102389433B1 (ko) * 2017-10-18 2022-04-25 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US10755793B2 (en) 2017-10-31 2020-08-25 Micron Technology, Inc. SLC page read
US10671497B2 (en) * 2018-01-19 2020-06-02 International Business Machines Corporation Efficient and selective sparing of bits in memory systems
KR102653843B1 (ko) * 2018-04-19 2024-04-02 에스케이하이닉스 주식회사 데이터 저장 장치 및 이의 리드 디스터번스 방지 방법, 이를 이용한 스토리지 시스템
CN110246534A (zh) * 2019-05-07 2019-09-17 陈颐 一种降低闪存记忆体写入扰动的方法
CN112185453A (zh) * 2020-10-09 2021-01-05 深圳佰维存储科技股份有限公司 读干扰测试方法、装置、计算机可读存储介质及电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1655121A (zh) * 2003-12-25 2005-08-17 松下电器产业株式会社 信息处理设备和用于该设备的rom图像生成设备

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1011981A (ja) * 1996-06-19 1998-01-16 Sony Corp 不揮発性半導体記憶装置
JPH1145587A (ja) * 1997-07-25 1999-02-16 Mitsubishi Electric Corp 半導体集積回路装置およびプログラム方法
JP4810712B2 (ja) * 1997-11-05 2011-11-09 ソニー株式会社 不揮発性半導体記憶装置及びその読み出し方法
JPH11243185A (ja) * 1997-12-24 1999-09-07 Sanyo Electric Co Ltd 不揮発性半導体メモリ
US6188608B1 (en) * 1999-04-23 2001-02-13 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
EP1160795B1 (de) * 2000-05-31 2007-12-19 STMicroelectronics S.r.l. Referenzzellenmatrixanordnung zum Datenlesen in einer nichtflüchtigen Speicheranordnung
US6580653B2 (en) * 2001-02-19 2003-06-17 Ricoh Company Ltd. Current saving semiconductor memory and method
JP2003007051A (ja) 2001-06-27 2003-01-10 Sanyo Electric Co Ltd メモリおよびその動作方法
JP4262911B2 (ja) * 2001-09-27 2009-05-13 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
US6678192B2 (en) * 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
JP3938309B2 (ja) * 2002-01-22 2007-06-27 富士通株式会社 リードディスターブを緩和したフラッシュメモリ
JP3833967B2 (ja) * 2002-05-29 2006-10-18 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
JP2004014090A (ja) * 2002-06-11 2004-01-15 Fujitsu Ltd データ再生装置、再生方法、及び再生装置の制御を行う回路
US7136986B2 (en) * 2002-11-29 2006-11-14 Ramos Technology Co., Ltd. Apparatus and method for controlling flash memories
JP4113423B2 (ja) 2002-12-04 2008-07-09 シャープ株式会社 半導体記憶装置及びリファレンスセルの補正方法
KR100543447B1 (ko) * 2003-04-03 2006-01-23 삼성전자주식회사 에러정정기능을 가진 플래쉬메모리장치
JP4256198B2 (ja) * 2003-04-22 2009-04-22 株式会社東芝 データ記憶システム
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7301807B2 (en) * 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
EP1538525A1 (de) * 2003-12-04 2005-06-08 Texas Instruments Incorporated ECC-Generierung simultan ausgeführt während des Lesens oder Programmierens eines Flash-Speichers
US7177977B2 (en) * 2004-03-19 2007-02-13 Sandisk Corporation Operating non-volatile memory without read disturb limitations
US7466597B2 (en) * 2004-09-09 2008-12-16 Samsung Electronics Co., Ltd. NAND flash memory device and copyback program method for same
JP2006113648A (ja) * 2004-10-12 2006-04-27 Hitachi Ltd ディスクアレイ装置
US8010764B2 (en) * 2005-07-07 2011-08-30 International Business Machines Corporation Method and system for decreasing power consumption in memory arrays having usage-driven power management
JP4776307B2 (ja) * 2005-08-31 2011-09-21 株式会社日立製作所 ストレージシステム、データ転送方法及びプログラム
JP4597829B2 (ja) 2005-09-27 2010-12-15 パトレネラ キャピタル リミテッド， エルエルシー メモリ
US20070115960A1 (en) * 2005-11-04 2007-05-24 Mediatek Inc. De-interleaver for data decoding
US7711889B2 (en) * 2006-07-31 2010-05-04 Kabushiki Kaisha Toshiba Nonvolatile memory system, and data read/write method for nonvolatile memory system
TWI350448B (en) * 2006-12-13 2011-10-11 Compal Electronics Inc Method for data preservation
KR20090014036A (ko) * 2007-08-03 2009-02-06 삼성전자주식회사 읽기 디스터번스로 인한 에러를 방지하는 메모리 시스템 및그 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1655121A (zh) * 2003-12-25 2005-08-17 松下电器产业株式会社 信息处理设备和用于该设备的rom图像生成设备

Also Published As

Publication number Publication date
KR20080111722A (ko) 2008-12-24
DE102008030264B4 (de) 2020-12-24
US8316278B2 (en) 2012-11-20
TW200901214A (en) 2009-01-01
TWI476777B (zh) 2015-03-11
KR100882841B1 (ko) 2009-02-10
DE102008030264A1 (de) 2009-01-15
US20080316822A1 (en) 2008-12-25
CN101339526A (zh) 2009-01-07

Similar Documents

Publication Publication Date Title
CN101339526B (zh) 检测由于读干扰而造成的位错误的存储系统及其方法
CN101183563B (zh) 包括闪存的存储器系统和操作该系统的方法
CN100545817C (zh) 用于提高数据可靠性的数据管理技术
CN107403645B (zh) 非易失性存储器器件及其读取和拷回方法
CN105144302B (zh) 存储器装置中的错误校正操作
US9117530B2 (en) Preserving data from adjacent word lines while programming binary non-volatile storage elements
US8719662B2 (en) Memory device with error detection
JP5505922B2 (ja) メモリシステム及びその読み出し方法
JP5085939B2 (ja) 書き込み／消去失敗検出機構を有するフラッシュ記憶システム
CN101529522B (zh) 从闪速存储器中的错误恢复的方法
US9471418B2 (en) Memory system that detects bit errors due to read disturbance and methods thereof
CN107643958A (zh) 数据恢复方法和使用其的存储器系统和raid存储系统
CN104733046A (zh) 非易失性存储装置的擦除方法及应用该方法的存储装置
JP2013518359A (ja) データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧
JP2006114078A (ja) 不揮発性半導体記憶装置及びその動作方法
US8347183B2 (en) Flash memory device using ECC algorithm and method of operating the same
CN106708754A (zh) 数据储存装置及其数据维护方法
CN105308685A (zh) 在非易失性多级多个存储器管芯的编程中恢复附近数据
KR20190094968A (ko) 메모리 컨트롤러 및 그 동작 방법
US11055174B2 (en) Soft chipkill recovery for bitline failures
KR20190005447A (ko) 반도체 메모리 장치의 동작 방법 및 메모리 시스템
JP6115740B1 (ja) 半導体記憶装置
CN105280232A (zh) 半导体存储器器件和存储器系统
CN104103318A (zh) 操作存储控制器的方法和包括存储控制器的数据存储设备
CN104969198A (zh) 数据路径完整性验证

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant