CN101206908A - 存储器设备、存储器控制器和存储器系统 - Google Patents
存储器设备、存储器控制器和存储器系统 Download PDFInfo
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- CN101206908A CN101206908A CNA2007101305435A CN200710130543A CN101206908A CN 101206908 A CN101206908 A CN 101206908A CN A2007101305435 A CNA2007101305435 A CN A2007101305435A CN 200710130543 A CN200710130543 A CN 200710130543A CN 101206908 A CN101206908 A CN 101206908A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/36—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of a graphic pattern, e.g. using an all-points-addressable [APA] memory
- G09G5/39—Control of the bit-mapped memory
- G09G5/393—Arrangements for updating the contents of the bit-mapped memory
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/36—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators characterised by the display of a graphic pattern, e.g. using an all-points-addressable [APA] memory
- G09G5/39—Control of the bit-mapped memory
- G09G5/395—Arrangements specially adapted for transferring the contents of the bit-mapped memory to the screen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
- Memory System (AREA)
Abstract
Description
Claims (49)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310149357.1A CN103258568B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-345415 | 2006-12-22 | ||
JP2006345415A JP5018074B2 (ja) | 2006-12-22 | 2006-12-22 | メモリ装置,メモリコントローラ及びメモリシステム |
JP2006345415 | 2006-12-22 |
Related Child Applications (2)
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CN201010182447.7A Division CN101901627B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN201310149357.1A Division CN103258568B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
Publications (2)
Publication Number | Publication Date |
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CN101206908A true CN101206908A (zh) | 2008-06-25 |
CN101206908B CN101206908B (zh) | 2011-08-03 |
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Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
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CN2007101305420A Expired - Fee Related CN101206912B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN201010182447.7A Expired - Fee Related CN101901627B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN2007101305435A Expired - Fee Related CN101206908B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN201310149357.1A Expired - Fee Related CN103258568B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN2007101358184A Expired - Fee Related CN101206916B (zh) | 2006-12-22 | 2007-07-13 | 存储器设备、存储器控制器和存储器系统 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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CN2007101305420A Expired - Fee Related CN101206912B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN201010182447.7A Expired - Fee Related CN101901627B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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CN201310149357.1A Expired - Fee Related CN103258568B (zh) | 2006-12-22 | 2007-07-11 | 存储器设备、存储器控制器和存储器系统 |
CN2007101358184A Expired - Fee Related CN101206916B (zh) | 2006-12-22 | 2007-07-13 | 存储器设备、存储器控制器和存储器系统 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7814294B2 (zh) |
EP (5) | EP1990804B1 (zh) |
JP (1) | JP5018074B2 (zh) |
KR (3) | KR100864473B1 (zh) |
CN (5) | CN101206912B (zh) |
DE (4) | DE602007013379D1 (zh) |
TW (1) | TWI378451B (zh) |
Cited By (11)
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CN102591448A (zh) * | 2010-11-09 | 2012-07-18 | 索尼公司 | 信息处理设备、信息处理方法和计算机可读存储介质 |
CN103176747A (zh) * | 2011-12-15 | 2013-06-26 | Lsi公司 | 用于处理存储设备内不按顺序报告的系统和方法 |
CN103403757A (zh) * | 2011-03-10 | 2013-11-20 | Ntt电子株式会社 | 存储器访问装置 |
CN103765378A (zh) * | 2011-08-29 | 2014-04-30 | 英特尔公司 | 2d收集指令和2d高速缓存 |
CN104517650A (zh) * | 2013-10-04 | 2015-04-15 | 马克西姆综合产品公司 | 使用唯一标识元件的安全存储器 |
CN105512047A (zh) * | 2014-09-26 | 2016-04-20 | 上海东软载波微电子有限公司 | Flash闪存的写操作、擦除操作方法及装置 |
CN109147851A (zh) * | 2018-08-31 | 2019-01-04 | 上海华力微电子有限公司 | 一种锁存电路 |
CN104252875B (zh) * | 2009-09-08 | 2019-01-04 | 瑞萨电子株式会社 | 半导体集成电路 |
CN109308928A (zh) * | 2017-07-28 | 2019-02-05 | 华邦电子股份有限公司 | 存储器装置的行解码器 |
CN109378029A (zh) * | 2013-03-22 | 2019-02-22 | 东芝存储器株式会社 | 半导体存储器装置 |
CN111199760A (zh) * | 2018-11-19 | 2020-05-26 | 爱思开海力士有限公司 | 半导体器件 |
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US20100097444A1 (en) * | 2008-10-16 | 2010-04-22 | Peter Lablans | Camera System for Creating an Image From a Plurality of Images |
US8355042B2 (en) | 2008-10-16 | 2013-01-15 | Spatial Cam Llc | Controller in a camera for creating a panoramic image |
JP5126360B2 (ja) | 2008-06-30 | 2013-01-23 | 富士通セミコンダクター株式会社 | メモリ装置及びそれを制御するメモリコントローラ |
US20120246380A1 (en) * | 2009-10-21 | 2012-09-27 | Avidan Akerib | Neighborhood operations for parallel processing |
TWI421871B (zh) * | 2009-11-27 | 2014-01-01 | Macronix Int Co Ltd | 定址一記憶積體電路之方法與裝置 |
US8643776B2 (en) * | 2009-11-30 | 2014-02-04 | Mediatek Inc. | Video processing method capable of performing predetermined data processing operation upon output of frame rate conversion with reduced storage device bandwidth usage and related video processing apparatus thereof |
CN102110462B (zh) * | 2009-12-25 | 2015-09-30 | 旺宏电子股份有限公司 | 寻址一存储集成电路的方法与装置 |
KR101691092B1 (ko) | 2010-08-26 | 2016-12-30 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
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