CN101043021A - 具有镶嵌形成的配线的半导体器件及其制造方法 - Google Patents
具有镶嵌形成的配线的半导体器件及其制造方法 Download PDFInfo
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- CN101043021A CN101043021A CNA2006101389898A CN200610138989A CN101043021A CN 101043021 A CN101043021 A CN 101043021A CN A2006101389898 A CNA2006101389898 A CN A2006101389898A CN 200610138989 A CN200610138989 A CN 200610138989A CN 101043021 A CN101043021 A CN 101043021A
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- distribution trough
- insulating film
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- semiconductor device
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-076422 | 2006-03-20 | ||
JP2006076422A JP4728153B2 (ja) | 2006-03-20 | 2006-03-20 | 半導体装置の製造方法 |
JP2006076422 | 2006-03-20 |
Publications (2)
Publication Number | Publication Date |
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CN101043021A true CN101043021A (zh) | 2007-09-26 |
CN101043021B CN101043021B (zh) | 2010-06-16 |
Family
ID=38518434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101389898A Active CN101043021B (zh) | 2006-03-20 | 2006-09-22 | 具有镶嵌形成的配线的半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7906433B2 (zh) |
JP (1) | JP4728153B2 (zh) |
CN (1) | CN101043021B (zh) |
TW (1) | TWI324375B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5436867B2 (ja) * | 2009-01-09 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | フューズ素子の製造方法 |
JP2010278330A (ja) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置及び半導体装置の製造方法 |
US20140061918A1 (en) * | 2011-12-27 | 2014-03-06 | Christopher Jezewski | METHOD OF FORMING LOW RESISTIVITY TaNx/Ta DIFFUSION BARRIERS FOR BACKEND INTERCONNECTS |
US8736056B2 (en) * | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
JP5904070B2 (ja) * | 2012-09-13 | 2016-04-13 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR102014197B1 (ko) * | 2012-10-25 | 2019-08-26 | 삼성전자주식회사 | 반도체 장치 및 이의 형성 방법 |
TWI594671B (zh) * | 2014-12-17 | 2017-08-01 | Flexible circuit board micro-aperture conductive through-hole structure and manufacturing method | |
DE102017103620B4 (de) * | 2017-02-22 | 2022-01-05 | Infineon Technologies Ag | Halbleitervorrichtung, Mikrofon und Verfahren zum Bilden einer Halbleitervorrichtung |
KR102460076B1 (ko) | 2017-08-01 | 2022-10-28 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (28)
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US5933756A (en) | 1995-10-18 | 1999-08-03 | Ricoh Company, Ltd. | Fabrication process of a semiconductor device having a multilayered interconnection structure |
JP3445495B2 (ja) | 1997-07-23 | 2003-09-08 | 株式会社東芝 | 半導体装置 |
US6169030B1 (en) | 1998-01-14 | 2001-01-02 | Applied Materials, Inc. | Metallization process and method |
US6042999A (en) | 1998-05-07 | 2000-03-28 | Taiwan Semiconductor Manufacturing Company | Robust dual damascene process |
US6406995B1 (en) | 1998-09-30 | 2002-06-18 | Intel Corporation | Pattern-sensitive deposition for damascene processing |
JP2000208620A (ja) * | 1999-01-11 | 2000-07-28 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2001230317A (ja) | 2000-02-15 | 2001-08-24 | Nec Corp | 多層配線構造の形成方法及び半導体装置の多層配線構造 |
JP2001284449A (ja) | 2000-03-31 | 2001-10-12 | Sony Corp | 半導体装置の製造方法 |
JP4858895B2 (ja) * | 2000-07-21 | 2012-01-18 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
WO2002091461A2 (en) | 2001-05-04 | 2002-11-14 | Tokyo Electron Limited | Ionized pvd with sequential deposition and etching |
JP2003092349A (ja) | 2001-09-18 | 2003-03-28 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP3810309B2 (ja) * | 2001-12-03 | 2006-08-16 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2003218114A (ja) | 2002-01-22 | 2003-07-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US7183195B2 (en) * | 2002-02-22 | 2007-02-27 | Samsung Electronics, Co., Ltd. | Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic filler |
US6855629B2 (en) | 2002-07-24 | 2005-02-15 | Samsung Electronics Co., Ltd. | Method for forming a dual damascene wiring pattern in a semiconductor device |
JP4023236B2 (ja) * | 2002-07-08 | 2007-12-19 | 松下電器産業株式会社 | 金属配線の形成方法 |
EP1385201B1 (en) | 2002-07-24 | 2012-09-05 | Samsung Electronics Co., Ltd. | Method of fabricating dual damascene interconnections of microelectronic device |
JP2004119950A (ja) * | 2002-09-30 | 2004-04-15 | Sony Corp | 半導体装置の製造方法 |
JP3909283B2 (ja) * | 2002-10-31 | 2007-04-25 | 富士通株式会社 | 半導体装置の製造方法 |
JP2004165336A (ja) | 2002-11-12 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP4173374B2 (ja) * | 2003-01-08 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2004253659A (ja) | 2003-02-20 | 2004-09-09 | Renesas Technology Corp | 半導体装置の製造方法 |
US20040209458A1 (en) | 2003-04-16 | 2004-10-21 | Tsai Shin Yi | Semiconductor device having rounding profile structure for reducing step profile and manufacturing processing stress and its manufacturing method |
JP4571785B2 (ja) | 2003-05-30 | 2010-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2005191254A (ja) * | 2003-12-25 | 2005-07-14 | Fujitsu Ltd | 半導体装置の製造方法 |
DE102004015862B4 (de) * | 2004-03-31 | 2006-11-16 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer leitenden Barrierenschicht in kritischen Öffnungen mittels eines abschließenden Abscheideschritts nach einer Rück-Sputter-Abscheidung |
KR100593446B1 (ko) * | 2004-05-19 | 2006-06-28 | 삼성전자주식회사 | 유기성 플루오라이드 계열 완충 용액을 사용해서 반도체장치를 제조하는 방법들 |
KR100745986B1 (ko) | 2004-12-08 | 2007-08-06 | 삼성전자주식회사 | 다공 생성 물질을 포함하는 충전재를 사용하는 미세 전자소자의 듀얼 다마신 배선의 제조 방법 |
-
2006
- 2006-03-20 JP JP2006076422A patent/JP4728153B2/ja active Active
- 2006-08-28 TW TW095131565A patent/TWI324375B/zh active
- 2006-09-05 US US11/515,202 patent/US7906433B2/en active Active
- 2006-09-22 CN CN2006101389898A patent/CN101043021B/zh active Active
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2010
- 2010-04-07 US US12/755,656 patent/US8546949B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20070218671A1 (en) | 2007-09-20 |
JP2007251105A (ja) | 2007-09-27 |
TWI324375B (en) | 2010-05-01 |
CN101043021B (zh) | 2010-06-16 |
TW200737406A (en) | 2007-10-01 |
US7906433B2 (en) | 2011-03-15 |
US20100193965A1 (en) | 2010-08-05 |
JP4728153B2 (ja) | 2011-07-20 |
US8546949B2 (en) | 2013-10-01 |
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