CN101009322B - 发光器件 - Google Patents
发光器件 Download PDFInfo
- Publication number
- CN101009322B CN101009322B CN200710085012.9A CN200710085012A CN101009322B CN 101009322 B CN101009322 B CN 101009322B CN 200710085012 A CN200710085012 A CN 200710085012A CN 101009322 B CN101009322 B CN 101009322B
- Authority
- CN
- China
- Prior art keywords
- tft
- channel
- film
- luminescent device
- oled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y02B20/36—
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP344671/2001 | 2001-11-09 | ||
JP2001344671 | 2001-11-09 | ||
JP10766/2002 | 2002-01-18 | ||
JP2002010766A JP4149168B2 (ja) | 2001-11-09 | 2002-01-18 | 発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021575835A Division CN1311562C (zh) | 2001-11-09 | 2002-11-09 | 发光器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101009322A CN101009322A (zh) | 2007-08-01 |
CN101009322B true CN101009322B (zh) | 2012-06-27 |
Family
ID=38697587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710085012.9A Expired - Lifetime CN101009322B (zh) | 2001-11-09 | 2002-11-09 | 发光器件 |
Country Status (2)
Country | Link |
---|---|
JP (19) | JP5111196B2 (enrdf_load_stackoverflow) |
CN (1) | CN101009322B (enrdf_load_stackoverflow) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101600100B1 (ko) | 2009-11-27 | 2016-03-04 | 가부시키가이샤 제이올레드 | 발광 표시 장치 |
JP5508301B2 (ja) * | 2011-01-18 | 2014-05-28 | パナソニック株式会社 | 発光表示装置 |
TWI713943B (zh) | 2013-09-12 | 2020-12-21 | 日商新力股份有限公司 | 顯示裝置及電子機器 |
KR102373901B1 (ko) | 2013-09-13 | 2022-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR102238641B1 (ko) * | 2014-12-26 | 2021-04-09 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 |
US10991835B2 (en) * | 2018-08-09 | 2021-04-27 | Array Photonics, Inc. | Hydrogen diffusion barrier for hybrid semiconductor growth |
KR102738040B1 (ko) * | 2019-07-12 | 2024-12-06 | 삼성디스플레이 주식회사 | 박막트랜지스터와 그것을 구비한 디스플레이 장치 및 그들의 제조방법 |
CN114899211B (zh) * | 2019-07-31 | 2025-06-10 | 京东方科技集团股份有限公司 | 显示基板以及显示装置 |
CN113381286B (zh) * | 2021-06-02 | 2023-03-03 | 山东大学 | 离子束增强腐蚀制备晶体薄膜的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
Family Cites Families (60)
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