CN100541746C - 电抛光具有带虚设结构的沟槽或者通路的晶片上的金属层 - Google Patents

电抛光具有带虚设结构的沟槽或者通路的晶片上的金属层 Download PDF

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Publication number
CN100541746C
CN100541746C CNB028088344A CN02808834A CN100541746C CN 100541746 C CN100541746 C CN 100541746C CN B028088344 A CNB028088344 A CN B028088344A CN 02808834 A CN02808834 A CN 02808834A CN 100541746 C CN100541746 C CN 100541746C
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CN
China
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concave area
metal level
layer
barrier layer
metal
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Expired - Fee Related
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CNB028088344A
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English (en)
Chinese (zh)
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CN1663036A (zh
Inventor
王晖
易培豪
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ACM Research Inc
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ACM Research Inc
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB028088344A 2001-04-24 2002-04-04 电抛光具有带虚设结构的沟槽或者通路的晶片上的金属层 Expired - Fee Related CN100541746C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US28627301P 2001-04-24 2001-04-24
US60/286,273 2001-04-24
US10/108,614 2002-03-27
US10/108,614 US6638863B2 (en) 2001-04-24 2002-03-27 Electropolishing metal layers on wafers having trenches or vias with dummy structures

Publications (2)

Publication Number Publication Date
CN1663036A CN1663036A (zh) 2005-08-31
CN100541746C true CN100541746C (zh) 2009-09-16

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028088344A Expired - Fee Related CN100541746C (zh) 2001-04-24 2002-04-04 电抛光具有带虚设结构的沟槽或者通路的晶片上的金属层

Country Status (7)

Country Link
US (2) US6638863B2 (https=)
EP (1) EP1382065A4 (https=)
JP (1) JP2004527126A (https=)
KR (1) KR101018187B1 (https=)
CN (1) CN100541746C (https=)
TW (1) TWI258814B (https=)
WO (1) WO2002086961A1 (https=)

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CN104637862A (zh) * 2013-11-14 2015-05-20 盛美半导体设备（上海）有限公司 半导体结构形成方法

Also Published As

Publication number Publication date
US20040080053A1 (en) 2004-04-29
US20020175419A1 (en) 2002-11-28
US6638863B2 (en) 2003-10-28
JP2004527126A (ja) 2004-09-02
CN1663036A (zh) 2005-08-31
EP1382065A4 (en) 2009-04-15
WO2002086961A1 (en) 2002-10-31
KR101018187B1 (ko) 2011-02-28
KR20030093327A (ko) 2003-12-06
TWI258814B (en) 2006-07-21
EP1382065A1 (en) 2004-01-21

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