JP2004527126A - ダミー構造を備えたトレンチもしくはバイアを有するウェハ上の金属層を電解研磨する方法 - Google Patents

ダミー構造を備えたトレンチもしくはバイアを有するウェハ上の金属層を電解研磨する方法 Download PDF

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Publication number
JP2004527126A
JP2004527126A JP2002584381A JP2002584381A JP2004527126A JP 2004527126 A JP2004527126 A JP 2004527126A JP 2002584381 A JP2002584381 A JP 2002584381A JP 2002584381 A JP2002584381 A JP 2002584381A JP 2004527126 A JP2004527126 A JP 2004527126A
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Prior art keywords
metal layer
layer
concave region
forming
dielectric
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JP2002584381A
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Japanese (ja)
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JP2004527126A5 (https=
Inventor
ワン，フイ
イー，ペイハウル
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エーシーエム リサーチ，インコーポレイティド
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Publication of JP2004527126A publication Critical patent/JP2004527126A/ja
Publication of JP2004527126A5 publication Critical patent/JP2004527126A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2002584381A 2001-04-24 2002-04-04 ダミー構造を備えたトレンチもしくはバイアを有するウェハ上の金属層を電解研磨する方法 Pending JP2004527126A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US28627301P 2001-04-24 2001-04-24
US10/108,614 US6638863B2 (en) 2001-04-24 2002-03-27 Electropolishing metal layers on wafers having trenches or vias with dummy structures
PCT/US2002/010500 WO2002086961A1 (en) 2001-04-24 2002-04-04 Electropolishing metal layers on wafers having trenches or vias with dummy structures

Publications (2)

Publication Number Publication Date
JP2004527126A true JP2004527126A (ja) 2004-09-02
JP2004527126A5 JP2004527126A5 (https=) 2005-12-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002584381A Pending JP2004527126A (ja) 2001-04-24 2002-04-04 ダミー構造を備えたトレンチもしくはバイアを有するウェハ上の金属層を電解研磨する方法

Country Status (7)

Country Link
US (2) US6638863B2 (https=)
EP (1) EP1382065A4 (https=)
JP (1) JP2004527126A (https=)
KR (1) KR101018187B1 (https=)
CN (1) CN100541746C (https=)
TW (1) TWI258814B (https=)
WO (1) WO2002086961A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012500480A (ja) * 2008-08-20 2012-01-05 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法及び装置
JP2019535124A (ja) * 2016-08-16 2019-12-05 ノースロップ グラマン システムズ コーポレイションＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ Ｓｙｓｔｅｍｓ Ｃｏｒｐｏｒａｔｉｏｎ 超伝導体の相互接続製造のための前洗浄方法

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JP2012500480A (ja) * 2008-08-20 2012-01-05 エーシーエム リサーチ （シャンハイ） インコーポレーテッド バリア層除去方法及び装置
US8598039B2 (en) 2008-08-20 2013-12-03 Acm Research (Shanghai) Inc. Barrier layer removal method and apparatus
JP2019535124A (ja) * 2016-08-16 2019-12-05 ノースロップ グラマン システムズ コーポレイションＮｏｒｔｈｒｏｐ Ｇｒｕｍｍａｎ Ｓｙｓｔｅｍｓ Ｃｏｒｐｏｒａｔｉｏｎ 超伝導体の相互接続製造のための前洗浄方法

Also Published As

Publication number Publication date
US20040080053A1 (en) 2004-04-29
US20020175419A1 (en) 2002-11-28
US6638863B2 (en) 2003-10-28
CN1663036A (zh) 2005-08-31
EP1382065A4 (en) 2009-04-15
WO2002086961A1 (en) 2002-10-31
KR101018187B1 (ko) 2011-02-28
CN100541746C (zh) 2009-09-16
KR20030093327A (ko) 2003-12-06
TWI258814B (en) 2006-07-21
EP1382065A1 (en) 2004-01-21

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