KR101018187B1 - 더미 구조물들을 사용하여 트렌치 또는 비아를 구비한 웨이퍼 상의 금속층을 전해연마하는 방법 - Google Patents

더미 구조물들을 사용하여 트렌치 또는 비아를 구비한 웨이퍼 상의 금속층을 전해연마하는 방법 Download PDF

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KR101018187B1
KR101018187B1 KR1020037013852A KR20037013852A KR101018187B1 KR 101018187 B1 KR101018187 B1 KR 101018187B1 KR 1020037013852 A KR1020037013852 A KR 1020037013852A KR 20037013852 A KR20037013852 A KR 20037013852A KR 101018187 B1 KR101018187 B1 KR 101018187B1
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metal layer
electropolishing
semiconductor wafer
layer
recessed region
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Korean (ko)
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KR20030093327A (ko
Inventor
후이 왕
페이하우어 위이
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에이씨엠 리서치, 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020037013852A 2001-04-24 2002-04-04 더미 구조물들을 사용하여 트렌치 또는 비아를 구비한 웨이퍼 상의 금속층을 전해연마하는 방법 Expired - Fee Related KR101018187B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US28627301P 2001-04-24 2001-04-24
US60/286,273 2001-04-24
US10/108,614 2002-03-27
US10/108,614 US6638863B2 (en) 2001-04-24 2002-03-27 Electropolishing metal layers on wafers having trenches or vias with dummy structures
PCT/US2002/010500 WO2002086961A1 (en) 2001-04-24 2002-04-04 Electropolishing metal layers on wafers having trenches or vias with dummy structures

Publications (2)

Publication Number Publication Date
KR20030093327A KR20030093327A (ko) 2003-12-06
KR101018187B1 true KR101018187B1 (ko) 2011-02-28

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KR1020037013852A Expired - Fee Related KR101018187B1 (ko) 2001-04-24 2002-04-04 더미 구조물들을 사용하여 트렌치 또는 비아를 구비한 웨이퍼 상의 금속층을 전해연마하는 방법

Country Status (7)

Country Link
US (2) US6638863B2 (https=)
EP (1) EP1382065A4 (https=)
JP (1) JP2004527126A (https=)
KR (1) KR101018187B1 (https=)
CN (1) CN100541746C (https=)
TW (1) TWI258814B (https=)
WO (1) WO2002086961A1 (https=)

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US20040080053A1 (en) 2004-04-29
US20020175419A1 (en) 2002-11-28
US6638863B2 (en) 2003-10-28
JP2004527126A (ja) 2004-09-02
CN1663036A (zh) 2005-08-31
EP1382065A4 (en) 2009-04-15
WO2002086961A1 (en) 2002-10-31
CN100541746C (zh) 2009-09-16
KR20030093327A (ko) 2003-12-06
TWI258814B (en) 2006-07-21
EP1382065A1 (en) 2004-01-21

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