CN100539195C - 非易失性存储器阵列、非易失性存储器系统和其形成方法 - Google Patents
非易失性存储器阵列、非易失性存储器系统和其形成方法 Download PDFInfo
- Publication number
- CN100539195C CN100539195C CNB028265963A CN02826596A CN100539195C CN 100539195 C CN100539195 C CN 100539195C CN B028265963 A CNB028265963 A CN B028265963A CN 02826596 A CN02826596 A CN 02826596A CN 100539195 C CN100539195 C CN 100539195C
- Authority
- CN
- China
- Prior art keywords
- dielectric
- word line
- charge
- array
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 title claims abstract description 245
- 238000000034 method Methods 0.000 title claims description 49
- 230000015572 biosynthetic process Effects 0.000 title description 12
- 238000003860 storage Methods 0.000 claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000000126 substance Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 26
- 238000003491 array Methods 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 156
- 238000007667 floating Methods 0.000 description 63
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 55
- 229920005591 polysilicon Polymers 0.000 description 49
- 238000005516 engineering process Methods 0.000 description 46
- 150000004767 nitrides Chemical class 0.000 description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- 239000012634 fragment Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 21
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- 238000000151 deposition Methods 0.000 description 20
- 230000006870 function Effects 0.000 description 13
- 239000002784 hot electron Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- 210000000352 storage cell Anatomy 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000012544 monitoring process Methods 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011232 storage material Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 241000216843 Ursus arctos horribilis Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/002,696 | 2001-10-31 | ||
US10/002,696 US6897522B2 (en) | 2001-10-31 | 2001-10-31 | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US10/161,235 | 2002-05-31 | ||
US10/161,235 US20030080370A1 (en) | 2001-10-31 | 2002-05-31 | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US10/280,352 US6925007B2 (en) | 2001-10-31 | 2002-10-25 | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US10/280,352 | 2002-10-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101358023A Division CN101140799B (zh) | 2001-10-31 | 2002-10-31 | 采用电介质存储元件的多态非易失性集成电路存储系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1610976A CN1610976A (zh) | 2005-04-27 |
CN100539195C true CN100539195C (zh) | 2009-09-09 |
Family
ID=27357218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028265963A Expired - Lifetime CN100539195C (zh) | 2001-10-31 | 2002-10-31 | 非易失性存储器阵列、非易失性存储器系统和其形成方法 |
Country Status (6)
Country | Link |
---|---|
US (6) | US6925007B2 (zh) |
EP (4) | EP1777750B1 (zh) |
CN (1) | CN100539195C (zh) |
AT (1) | ATE360262T1 (zh) |
DE (1) | DE60219666T2 (zh) |
WO (1) | WO2003038907A1 (zh) |
Families Citing this family (297)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
KR100544175B1 (ko) * | 1999-05-08 | 2006-01-23 | 삼성전자주식회사 | 링킹 타입 정보를 저장하는 기록 매체와 결함 영역 처리 방법 |
US7554842B2 (en) * | 2001-09-17 | 2009-06-30 | Sandisk Corporation | Multi-purpose non-volatile memory card |
US7108975B2 (en) * | 2001-09-21 | 2006-09-19 | Regents Of The University Of Michigan | Atlastin |
US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US7391653B2 (en) * | 2002-10-15 | 2008-06-24 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US7382659B2 (en) * | 2002-10-15 | 2008-06-03 | Halo Lsi, Inc. | Twin insulator charge storage device operation and its fabrication method |
US6888755B2 (en) | 2002-10-28 | 2005-05-03 | Sandisk Corporation | Flash memory cell arrays having dual control gates per memory cell charge storage element |
US7233522B2 (en) * | 2002-12-31 | 2007-06-19 | Sandisk 3D Llc | NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same |
US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
US20040130942A1 (en) * | 2003-01-02 | 2004-07-08 | Macronix International Co., Ltd. | Data retention for a localized trapping non-volatile memory |
US6944063B2 (en) | 2003-01-28 | 2005-09-13 | Sandisk Corporation | Non-volatile semiconductor memory with large erase blocks storing cycle counts |
US6879505B2 (en) * | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
US7233024B2 (en) | 2003-03-31 | 2007-06-19 | Sandisk 3D Llc | Three-dimensional memory device incorporating segmented bit line memory array |
US6956768B2 (en) | 2003-04-15 | 2005-10-18 | Advanced Micro Devices, Inc. | Method of programming dual cell memory device to store multiple data states per cell |
US7045849B2 (en) | 2003-05-21 | 2006-05-16 | Sandisk Corporation | Use of voids between elements in semiconductor structures for isolation |
US7057940B2 (en) * | 2003-08-19 | 2006-06-06 | Powerchip Semiconductor Corp. | Flash memory cell, flash memory cell array and manufacturing method thereof |
EP1564753A1 (en) * | 2003-10-02 | 2005-08-17 | Macronix International Co., Ltd. | Nand-type non-volatile memory cell and method for operating same |
JP4878743B2 (ja) * | 2003-10-02 | 2012-02-15 | 旺宏電子股▲ふん▼有限公司 | Nand型不揮発性メモリセルの作動方法 |
EP1523012A1 (en) * | 2003-10-02 | 2005-04-13 | Macronix International Co., Ltd. | Nand-type non-volatile memory cell and method for operating same |
US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
US7012835B2 (en) | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
US20050093057A1 (en) * | 2003-11-03 | 2005-05-05 | Fu-Chia Shone | Common spacer dual gate memory cell and method for forming a nonvolatile memory array |
US7221588B2 (en) * | 2003-12-05 | 2007-05-22 | Sandisk 3D Llc | Memory array incorporating memory cells arranged in NAND strings |
US20050128807A1 (en) * | 2003-12-05 | 2005-06-16 | En-Hsing Chen | Nand memory array incorporating multiple series selection devices and method for operation of same |
US7050330B2 (en) * | 2003-12-16 | 2006-05-23 | Micron Technology, Inc. | Multi-state NROM device |
US7433993B2 (en) | 2003-12-30 | 2008-10-07 | San Disk Corportion | Adaptive metablocks |
US7139864B2 (en) | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
US7631138B2 (en) * | 2003-12-30 | 2009-12-08 | Sandisk Corporation | Adaptive mode switching of flash memory address mapping based on host usage characteristics |
US8504798B2 (en) | 2003-12-30 | 2013-08-06 | Sandisk Technologies Inc. | Management of non-volatile memory systems having large erase blocks |
US7173863B2 (en) * | 2004-03-08 | 2007-02-06 | Sandisk Corporation | Flash controller cache architecture |
US7383375B2 (en) * | 2003-12-30 | 2008-06-03 | Sandisk Corporation | Data run programming |
US7594135B2 (en) | 2003-12-31 | 2009-09-22 | Sandisk Corporation | Flash memory system startup operation |
US7816722B2 (en) | 2004-02-04 | 2010-10-19 | Hewlett-Packard Development Company, L.P. | Memory array |
US7072217B2 (en) * | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
US6989320B2 (en) | 2004-05-11 | 2006-01-24 | Advanced Micro Devices, Inc. | Bitline implant utilizing dual poly |
US7133316B2 (en) * | 2004-06-02 | 2006-11-07 | Macronix International Co., Ltd. | Program/erase method for P-channel charge trapping memory device |
US20060007732A1 (en) * | 2004-07-06 | 2006-01-12 | Macronix International Co., Ltd. | Charge trapping non-volatile memory and method for operating same |
US7209386B2 (en) * | 2004-07-06 | 2007-04-24 | Macronix International Co., Ltd. | Charge trapping non-volatile memory and method for gate-by-gate erase for same |
US7106625B2 (en) * | 2004-07-06 | 2006-09-12 | Macronix International Co, Td | Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same |
US7120059B2 (en) * | 2004-07-06 | 2006-10-10 | Macronix International Co., Ltd. | Memory array including multiple-gate charge trapping non-volatile cells |
US7395384B2 (en) * | 2004-07-21 | 2008-07-01 | Sandisk Corproation | Method and apparatus for maintaining data on non-volatile memory systems |
US8607016B2 (en) | 2004-07-21 | 2013-12-10 | Sandisk Technologies Inc. | FAT analysis for optimized sequential cluster management |
US8375146B2 (en) | 2004-08-09 | 2013-02-12 | SanDisk Technologies, Inc. | Ring bus structure and its use in flash memory systems |
US20060039200A1 (en) * | 2004-08-20 | 2006-02-23 | Ching-Sung Yang | Non-volatile memory cell, fabrication method and operating method thereof |
US7170785B2 (en) * | 2004-09-09 | 2007-01-30 | Macronix International Co., Ltd. | Method and apparatus for operating a string of charge trapping memory cells |
US7307888B2 (en) * | 2004-09-09 | 2007-12-11 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory in a parallel arrangement |
US20060073702A1 (en) * | 2004-09-21 | 2006-04-06 | Skymedi Corporation | Memory structure and manufacturing as well as programming method thereof |
US7441067B2 (en) | 2004-11-15 | 2008-10-21 | Sandisk Corporation | Cyclic flash memory wear leveling |
US7123518B2 (en) * | 2004-11-22 | 2006-10-17 | United Microelectronics Crop. | Memory device |
US7416956B2 (en) * | 2004-11-23 | 2008-08-26 | Sandisk Corporation | Self-aligned trench filling for narrow gap isolation regions |
US7381615B2 (en) * | 2004-11-23 | 2008-06-03 | Sandisk Corporation | Methods for self-aligned trench filling with grown dielectric for high coupling ratio in semiconductor devices |
US7366826B2 (en) | 2004-12-16 | 2008-04-29 | Sandisk Corporation | Non-volatile memory and method with multi-stream update tracking |
US7412560B2 (en) | 2004-12-16 | 2008-08-12 | Sandisk Corporation | Non-volatile memory and method with multi-stream updating |
US7386655B2 (en) * | 2004-12-16 | 2008-06-10 | Sandisk Corporation | Non-volatile memory and method with improved indexing for scratch pad and update blocks |
US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
US7218570B2 (en) * | 2004-12-17 | 2007-05-15 | Sandisk 3D Llc | Apparatus and method for memory operations using address-dependent conditions |
US7882299B2 (en) | 2004-12-21 | 2011-02-01 | Sandisk Corporation | System and method for use of on-chip non-volatile memory write cache |
US7482223B2 (en) | 2004-12-22 | 2009-01-27 | Sandisk Corporation | Multi-thickness dielectric for semiconductor memory |
US6980471B1 (en) * | 2004-12-23 | 2005-12-27 | Sandisk Corporation | Substrate electron injection techniques for programming non-volatile charge storage memory cells |
US7200045B2 (en) * | 2004-12-30 | 2007-04-03 | Macronix International Company, Ltd. | Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL) |
US7315474B2 (en) | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7473589B2 (en) | 2005-12-09 | 2009-01-06 | Macronix International Co., Ltd. | Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
US7315917B2 (en) * | 2005-01-20 | 2008-01-01 | Sandisk Corporation | Scheduling of housekeeping operations in flash memory systems |
US20060184718A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct file data programming and deletion in flash memories |
US7877539B2 (en) | 2005-02-16 | 2011-01-25 | Sandisk Corporation | Direct data file storage in flash memories |
US9104315B2 (en) | 2005-02-04 | 2015-08-11 | Sandisk Technologies Inc. | Systems and methods for a mass data storage system having a file-based interface to a host and a non-file-based interface to secondary storage |
US20060184719A1 (en) * | 2005-02-16 | 2006-08-17 | Sinclair Alan W | Direct data file storage implementation techniques in flash memories |
TWI282618B (en) * | 2005-02-23 | 2007-06-11 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
US7313023B2 (en) * | 2005-03-11 | 2007-12-25 | Sandisk Corporation | Partition of non-volatile memory array to reduce bit line capacitance |
CN101203954B (zh) * | 2005-06-28 | 2011-09-28 | 斯班逊有限公司 | 半导体器件及其制造方法 |
US7409489B2 (en) * | 2005-08-03 | 2008-08-05 | Sandisk Corporation | Scheduling of reclaim operations in non-volatile memory |
US7669003B2 (en) | 2005-08-03 | 2010-02-23 | Sandisk Corporation | Reprogrammable non-volatile memory systems with indexing of directly stored data files |
US7627733B2 (en) * | 2005-08-03 | 2009-12-01 | Sandisk Corporation | Method and system for dual mode access for storage devices |
US7480766B2 (en) * | 2005-08-03 | 2009-01-20 | Sandisk Corporation | Interfacing systems operating through a logical address space and on a direct data file basis |
US7949845B2 (en) * | 2005-08-03 | 2011-05-24 | Sandisk Corporation | Indexing of file data in reprogrammable non-volatile memories that directly store data files |
US7558906B2 (en) | 2005-08-03 | 2009-07-07 | Sandisk Corporation | Methods of managing blocks in nonvolatile memory |
US7552271B2 (en) | 2005-08-03 | 2009-06-23 | Sandisk Corporation | Nonvolatile memory with block management |
US7388252B2 (en) * | 2005-09-23 | 2008-06-17 | Macronix International Co., Ltd. | Two-bits per cell not-and-gate (NAND) nitride trap memory |
US7928005B2 (en) * | 2005-09-27 | 2011-04-19 | Advanced Micro Devices, Inc. | Method for forming narrow structures in a semiconductor device |
US7814262B2 (en) * | 2005-10-13 | 2010-10-12 | Sandisk Corporation | Memory system storing transformed units of data in fixed sized storage blocks |
US7529905B2 (en) * | 2005-10-13 | 2009-05-05 | Sandisk Corporation | Method of storing transformed units of data in a memory system having fixed sized storage blocks |
US7631162B2 (en) | 2005-10-27 | 2009-12-08 | Sandisck Corporation | Non-volatile memory with adaptive handling of data writes |
US7509471B2 (en) * | 2005-10-27 | 2009-03-24 | Sandisk Corporation | Methods for adaptively handling data writes in non-volatile memories |
US7634585B2 (en) * | 2005-11-04 | 2009-12-15 | Sandisk Corporation | In-line cache using nonvolatile memory between host and disk device |
US20070106842A1 (en) * | 2005-11-04 | 2007-05-10 | Conley Kevin M | Enhanced first level storage caching methods using nonvolatile memory |
US7379330B2 (en) * | 2005-11-08 | 2008-05-27 | Sandisk Corporation | Retargetable memory cell redundancy methods |
TWI271827B (en) * | 2005-11-11 | 2007-01-21 | Powerchip Semiconductor Corp | Non-volatile memory and manufacturing method and operating method thereof |
US7615448B2 (en) * | 2005-12-06 | 2009-11-10 | Sandisk Corporation | Method of forming low resistance void-free contacts |
US7737483B2 (en) * | 2005-12-06 | 2010-06-15 | Sandisk Corporation | Low resistance void-free contacts |
US7877540B2 (en) * | 2005-12-13 | 2011-01-25 | Sandisk Corporation | Logically-addressed file storage methods |
US20070156998A1 (en) * | 2005-12-21 | 2007-07-05 | Gorobets Sergey A | Methods for memory allocation in non-volatile memories with a directly mapped file storage system |
US7793068B2 (en) | 2005-12-21 | 2010-09-07 | Sandisk Corporation | Dual mode access for non-volatile storage devices |
US20070143560A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Non-volatile memories with memory allocation for a directly mapped file storage system |
US20070143561A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system |
WO2007081638A2 (en) * | 2005-12-21 | 2007-07-19 | Sandisk Corporation | Non-volatile memories and methods with adaptive file handling in a directly mapped file storage system |
US20070143567A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for data alignment in non-volatile memories with a directly mapped file storage system |
US7769978B2 (en) | 2005-12-21 | 2010-08-03 | Sandisk Corporation | Method and system for accessing non-volatile storage devices |
US7747837B2 (en) | 2005-12-21 | 2010-06-29 | Sandisk Corporation | Method and system for accessing non-volatile storage devices |
US20070143566A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Non-volatile memories with data alignment in a directly mapped file storage system |
US20070143378A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Non-volatile memories with adaptive file handling in a directly mapped file storage system |
US7495294B2 (en) * | 2005-12-21 | 2009-02-24 | Sandisk Corporation | Flash devices with shared word lines |
US7655536B2 (en) * | 2005-12-21 | 2010-02-02 | Sandisk Corporation | Methods of forming flash devices with shared word lines |
US7700439B2 (en) | 2006-03-15 | 2010-04-20 | Freescale Semiconductor, Inc. | Silicided nonvolatile memory and method of making same |
US20070236519A1 (en) * | 2006-03-31 | 2007-10-11 | Edelen John G | Multi-Level Memory for Micro-Fluid Ejection Heads |
US7382654B2 (en) * | 2006-03-31 | 2008-06-03 | Macronix International Co., Ltd. | Trapping storage flash memory cell structure with inversion source and drain regions |
US7951669B2 (en) * | 2006-04-13 | 2011-05-31 | Sandisk Corporation | Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element |
US7467253B2 (en) * | 2006-04-13 | 2008-12-16 | Sandisk Corporation | Cycle count storage systems |
US7451264B2 (en) * | 2006-04-13 | 2008-11-11 | Sandisk Corporation | Cycle count storage methods |
KR100760633B1 (ko) * | 2006-04-26 | 2007-09-20 | 삼성전자주식회사 | 전하트랩형 비휘발성 메모리 장치 및 그 형성 방법 |
US7907450B2 (en) | 2006-05-08 | 2011-03-15 | Macronix International Co., Ltd. | Methods and apparatus for implementing bit-by-bit erase of a flash memory device |
US7840875B2 (en) * | 2006-05-15 | 2010-11-23 | Sandisk Corporation | Convolutional coding methods for nonvolatile memory |
US20070266296A1 (en) * | 2006-05-15 | 2007-11-15 | Conley Kevin M | Nonvolatile Memory with Convolutional Coding |
TW200812074A (en) * | 2006-07-04 | 2008-03-01 | Nxp Bv | Non-volatile memory and-array |
KR101320519B1 (ko) * | 2006-07-27 | 2013-10-23 | 삼성전자주식회사 | 패스 트랜지스터를 갖는 비휘발성 메모리 소자 및 그 동작방법 |
KR20080010900A (ko) * | 2006-07-28 | 2008-01-31 | 삼성전자주식회사 | 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법 |
KR100763918B1 (ko) * | 2006-07-28 | 2007-10-05 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US7518912B2 (en) * | 2006-08-25 | 2009-04-14 | Powerchip Semiconductor Corp. | Multi-level non-volatile memory |
US7696044B2 (en) * | 2006-09-19 | 2010-04-13 | Sandisk Corporation | Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7646054B2 (en) * | 2006-09-19 | 2010-01-12 | Sandisk Corporation | Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7961511B2 (en) * | 2006-09-26 | 2011-06-14 | Sandisk Corporation | Hybrid programming methods and systems for non-volatile memory storage elements |
US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
US7818653B2 (en) * | 2006-09-28 | 2010-10-19 | Sandisk Corporation | Methods of soft-input soft-output decoding for nonvolatile memory |
US7805663B2 (en) * | 2006-09-28 | 2010-09-28 | Sandisk Corporation | Methods of adapting operation of nonvolatile memory |
US7904783B2 (en) * | 2006-09-28 | 2011-03-08 | Sandisk Corporation | Soft-input soft-output decoder for nonvolatile memory |
US20080092015A1 (en) * | 2006-09-28 | 2008-04-17 | Yigal Brandman | Nonvolatile memory with adaptive operation |
US7656735B2 (en) | 2006-09-29 | 2010-02-02 | Sandisk Corporation | Dual voltage flash memory methods |
US7675802B2 (en) | 2006-09-29 | 2010-03-09 | Sandisk Corporation | Dual voltage flash memory card |
US8772858B2 (en) | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
US7811890B2 (en) | 2006-10-11 | 2010-10-12 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
US20080091871A1 (en) * | 2006-10-12 | 2008-04-17 | Alan David Bennett | Non-volatile memory with worst-case control data management |
US7904788B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of varying read threshold voltage in nonvolatile memory |
US8001441B2 (en) * | 2006-11-03 | 2011-08-16 | Sandisk Technologies Inc. | Nonvolatile memory with modulated error correction coding |
US7904780B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
US7558109B2 (en) * | 2006-11-03 | 2009-07-07 | Sandisk Corporation | Nonvolatile memory with variable read threshold |
US7800161B2 (en) * | 2006-12-21 | 2010-09-21 | Sandisk Corporation | Flash NAND memory cell array with charge storage elements positioned in trenches |
US7642160B2 (en) * | 2006-12-21 | 2010-01-05 | Sandisk Corporation | Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches |
US20080155175A1 (en) * | 2006-12-26 | 2008-06-26 | Sinclair Alan W | Host System That Manages a LBA Interface With Flash Memory |
US7917686B2 (en) * | 2006-12-26 | 2011-03-29 | Sandisk Corporation | Host system with direct data file interface configurability |
US7739444B2 (en) | 2006-12-26 | 2010-06-15 | Sandisk Corporation | System using a direct data file system with a continuous logical address space interface |
US8209461B2 (en) | 2006-12-26 | 2012-06-26 | Sandisk Technologies Inc. | Configuration of host LBA interface with flash memory |
US8166267B2 (en) * | 2006-12-26 | 2012-04-24 | Sandisk Technologies Inc. | Managing a LBA interface in a direct data file memory system |
US8046522B2 (en) * | 2006-12-26 | 2011-10-25 | SanDisk Technologies, Inc. | Use of a direct data file system with a continuous logical address space interface and control of file address storage in logical blocks |
KR101314328B1 (ko) * | 2007-01-24 | 2013-10-01 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 동작 방법 |
US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
US7477547B2 (en) * | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
US20080294814A1 (en) * | 2007-05-24 | 2008-11-27 | Sergey Anatolievich Gorobets | Flash Memory System with Management of Housekeeping Operations |
US20080294813A1 (en) * | 2007-05-24 | 2008-11-27 | Sergey Anatolievich Gorobets | Managing Housekeeping Operations in Flash Memory |
US8239639B2 (en) * | 2007-06-08 | 2012-08-07 | Sandisk Technologies Inc. | Method and apparatus for providing data type and host file information to a mass storage system |
US8713283B2 (en) * | 2007-06-08 | 2014-04-29 | Sandisk Technologies Inc. | Method of interfacing a host operating through a logical address space with a direct file storage medium |
US20080307156A1 (en) * | 2007-06-08 | 2008-12-11 | Sinclair Alan W | System For Interfacing A Host Operating Through A Logical Address Space With A Direct File Storage Medium |
US9396103B2 (en) * | 2007-06-08 | 2016-07-19 | Sandisk Technologies Llc | Method and system for storage address re-mapping for a memory device |
US20090039414A1 (en) | 2007-08-09 | 2009-02-12 | Macronix International Co., Ltd. | Charge trapping memory cell with high speed erase |
TWI340474B (en) * | 2007-08-24 | 2011-04-11 | Nanya Technology Corp | Method of forming semiconductor structure |
WO2009095902A2 (en) | 2008-01-31 | 2009-08-06 | Densbits Technologies Ltd. | Systems and methods for handling immediate data errors in flash memory |
US8650352B2 (en) * | 2007-09-20 | 2014-02-11 | Densbits Technologies Ltd. | Systems and methods for determining logical values of coupled flash memory cells |
US8694715B2 (en) | 2007-10-22 | 2014-04-08 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053961A2 (en) | 2007-10-25 | 2009-04-30 | Densbits Technologies Ltd. | Systems and methods for multiple coding rates in flash devices |
US8296498B2 (en) * | 2007-11-13 | 2012-10-23 | Sandisk Technologies Inc. | Method and system for virtual fast access non-volatile RAM |
US20090129152A1 (en) * | 2007-11-21 | 2009-05-21 | Roohparvar Frankie F | Program and read method for mlc |
US8453022B2 (en) | 2007-12-05 | 2013-05-28 | Densbits Technologies Ltd. | Apparatus and methods for generating row-specific reading thresholds in flash memory |
WO2009072103A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated bch codes and/or designation of 'first below' cells |
WO2009072105A2 (en) * | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications |
US8359516B2 (en) | 2007-12-12 | 2013-01-22 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
WO2009074979A2 (en) | 2007-12-12 | 2009-06-18 | Densbits Technologies Ltd. | Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications |
WO2009078006A2 (en) | 2007-12-18 | 2009-06-25 | Densbits Technologies Ltd. | Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith |
US8880483B2 (en) * | 2007-12-21 | 2014-11-04 | Sandisk Technologies Inc. | System and method for implementing extensions to intelligently manage resources of a mass storage system |
CN101911207B (zh) * | 2008-01-16 | 2014-05-07 | 富士通株式会社 | 半导体存储装置、控制装置、控制方法 |
US7975243B2 (en) * | 2008-02-25 | 2011-07-05 | Samsung Electronics Co., Ltd. | System and method for television control using hand gestures |
US8972472B2 (en) * | 2008-03-25 | 2015-03-03 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
US20090271562A1 (en) * | 2008-04-25 | 2009-10-29 | Sinclair Alan W | Method and system for storage address re-mapping for a multi-bank memory device |
US20090321806A1 (en) * | 2008-06-26 | 2009-12-31 | Len Mei | Nonvolatile memory with floating gates with upward protrusions |
US8332725B2 (en) | 2008-08-20 | 2012-12-11 | Densbits Technologies Ltd. | Reprogramming non volatile memory portions |
US8252653B2 (en) | 2008-10-21 | 2012-08-28 | Applied Materials, Inc. | Method of forming a non-volatile memory having a silicon nitride charge trap layer |
JP5558695B2 (ja) * | 2008-11-18 | 2014-07-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8700840B2 (en) * | 2009-01-05 | 2014-04-15 | SanDisk Technologies, Inc. | Nonvolatile memory with write cache having flush/eviction methods |
US8040744B2 (en) | 2009-01-05 | 2011-10-18 | Sandisk Technologies Inc. | Spare block management of non-volatile memories |
US8094500B2 (en) * | 2009-01-05 | 2012-01-10 | Sandisk Technologies Inc. | Non-volatile memory and method with write cache partitioning |
US8244960B2 (en) | 2009-01-05 | 2012-08-14 | Sandisk Technologies Inc. | Non-volatile memory and method with write cache partition management methods |
US20100174845A1 (en) * | 2009-01-05 | 2010-07-08 | Sergey Anatolievich Gorobets | Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques |
US8458574B2 (en) | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US8199576B2 (en) * | 2009-04-08 | 2012-06-12 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture |
KR101793286B1 (ko) | 2009-04-08 | 2017-11-02 | 샌디스크 테크놀로지스 엘엘씨 | 수직의 비트 라인들 및 단면 워드 라인 아키텍처를 가지는 재프로그래밍 가능한 메모리 요소들의 3차원 어레이 |
US7983065B2 (en) * | 2009-04-08 | 2011-07-19 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines |
US8351236B2 (en) * | 2009-04-08 | 2013-01-08 | Sandisk 3D Llc | Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture |
US8198671B2 (en) * | 2009-04-22 | 2012-06-12 | Applied Materials, Inc. | Modification of charge trap silicon nitride with oxygen plasma |
US8566510B2 (en) | 2009-05-12 | 2013-10-22 | Densbits Technologies Ltd. | Systems and method for flash memory management |
US8868821B2 (en) | 2009-08-26 | 2014-10-21 | Densbits Technologies Ltd. | Systems and methods for pre-equalization and code design for a flash memory |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8305812B2 (en) * | 2009-08-26 | 2012-11-06 | Densbits Technologies Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
US8626988B2 (en) * | 2009-11-19 | 2014-01-07 | Densbits Technologies Ltd. | System and method for uncoded bit error rate equalization via interleaving |
US8473669B2 (en) * | 2009-12-07 | 2013-06-25 | Sandisk Technologies Inc. | Method and system for concurrent background and foreground operations in a non-volatile memory array |
US9037777B2 (en) | 2009-12-22 | 2015-05-19 | Densbits Technologies Ltd. | Device, system, and method for reducing program/read disturb in flash arrays |
US8607124B2 (en) * | 2009-12-24 | 2013-12-10 | Densbits Technologies Ltd. | System and method for setting a flash memory cell read threshold |
US8700970B2 (en) * | 2010-02-28 | 2014-04-15 | Densbits Technologies Ltd. | System and method for multi-dimensional decoding |
US9104610B2 (en) | 2010-04-06 | 2015-08-11 | Densbits Technologies Ltd. | Method, system and medium for analog encryption in a flash memory |
US8527840B2 (en) | 2010-04-06 | 2013-09-03 | Densbits Technologies Ltd. | System and method for restoring damaged data programmed on a flash device |
US8745317B2 (en) | 2010-04-07 | 2014-06-03 | Densbits Technologies Ltd. | System and method for storing information in a multi-level cell memory |
TWI473253B (zh) | 2010-04-07 | 2015-02-11 | Macronix Int Co Ltd | 具有連續電荷儲存介電堆疊的非揮發記憶陣列 |
US9021177B2 (en) | 2010-04-29 | 2015-04-28 | Densbits Technologies Ltd. | System and method for allocating and using spare blocks in a flash memory |
CN102237366B (zh) * | 2010-04-29 | 2016-06-15 | 旺宏电子股份有限公司 | 具有连续电荷储存介电堆栈的非挥发存储阵列 |
US8547720B2 (en) | 2010-06-08 | 2013-10-01 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines |
US8526237B2 (en) | 2010-06-08 | 2013-09-03 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements and read/write circuits and method thereof |
US8539311B2 (en) | 2010-07-01 | 2013-09-17 | Densbits Technologies Ltd. | System and method for data recovery in multi-level cell memories |
US8468431B2 (en) | 2010-07-01 | 2013-06-18 | Densbits Technologies Ltd. | System and method for multi-dimensional encoding and decoding |
US20120008414A1 (en) | 2010-07-06 | 2012-01-12 | Michael Katz | Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system |
US8964464B2 (en) | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
US8508995B2 (en) | 2010-09-15 | 2013-08-13 | Densbits Technologies Ltd. | System and method for adjusting read voltage thresholds in memories |
US8452911B2 (en) | 2010-09-30 | 2013-05-28 | Sandisk Technologies Inc. | Synchronized maintenance operations in a multi-bank storage system |
US9063878B2 (en) | 2010-11-03 | 2015-06-23 | Densbits Technologies Ltd. | Method, system and computer readable medium for copy back |
US8850100B2 (en) | 2010-12-07 | 2014-09-30 | Densbits Technologies Ltd. | Interleaving codeword portions between multiple planes and/or dies of a flash memory device |
US8824183B2 (en) | 2010-12-14 | 2014-09-02 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with vertical bit lines and select devices and methods thereof |
US9227456B2 (en) | 2010-12-14 | 2016-01-05 | Sandisk 3D Llc | Memories with cylindrical read/write stacks |
US8711630B2 (en) * | 2010-12-29 | 2014-04-29 | Hynix Semiconductor Inc. | Programming method of non-volatile memory device |
US10079068B2 (en) | 2011-02-23 | 2018-09-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Devices and method for wear estimation based memory management |
US8693258B2 (en) | 2011-03-17 | 2014-04-08 | Densbits Technologies Ltd. | Obtaining soft information using a hard interface |
US8990665B1 (en) | 2011-04-06 | 2015-03-24 | Densbits Technologies Ltd. | System, method and computer program product for joint search of a read threshold and soft decoding |
US9240405B2 (en) | 2011-04-19 | 2016-01-19 | Macronix International Co., Ltd. | Memory with off-chip controller |
TWI469147B (zh) * | 2011-05-10 | 2015-01-11 | Macronix Int Co Ltd | 記憶體的程式化方法 |
US8861281B2 (en) * | 2011-05-11 | 2014-10-14 | Macronix International Co., Ltd. | Method of programming memory and memory apparatus utilizing the method |
US9110785B1 (en) | 2011-05-12 | 2015-08-18 | Densbits Technologies Ltd. | Ordered merge of data sectors that belong to memory space portions |
US9396106B2 (en) | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US8996790B1 (en) | 2011-05-12 | 2015-03-31 | Densbits Technologies Ltd. | System and method for flash memory management |
US9195592B1 (en) | 2011-05-12 | 2015-11-24 | Densbits Technologies Ltd. | Advanced management of a non-volatile memory |
US9501392B1 (en) | 2011-05-12 | 2016-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of a non-volatile memory module |
US9372792B1 (en) | 2011-05-12 | 2016-06-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US8667211B2 (en) | 2011-06-01 | 2014-03-04 | Densbits Technologies Ltd. | System and method for managing a non-volatile memory |
US8547743B2 (en) * | 2011-06-28 | 2013-10-01 | Seagate Technology Llc | Read error recovery for solid-state memory based on cumulative background charges |
US8975137B2 (en) * | 2011-07-11 | 2015-03-10 | Nanya Technology Corporation | Process of forming slit in substrate |
US8588003B1 (en) | 2011-08-01 | 2013-11-19 | Densbits Technologies Ltd. | System, method and computer program product for programming and for recovering from a power failure |
US8553468B2 (en) | 2011-09-21 | 2013-10-08 | Densbits Technologies Ltd. | System and method for managing erase operations in a non-volatile memory |
JP2013088862A (ja) * | 2011-10-13 | 2013-05-13 | Elpida Memory Inc | レイアウトデータ作成装置及び半導体装置 |
US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
US20130151755A1 (en) | 2011-12-12 | 2013-06-13 | Reuven Elhamias | Non-Volatile Storage Systems with Go To Sleep Adaption |
US8762627B2 (en) | 2011-12-21 | 2014-06-24 | Sandisk Technologies Inc. | Memory logical defragmentation during garbage collection |
US8947941B2 (en) | 2012-02-09 | 2015-02-03 | Densbits Technologies Ltd. | State responsive operations relating to flash memory cells |
US8996788B2 (en) | 2012-02-09 | 2015-03-31 | Densbits Technologies Ltd. | Configurable flash interface |
US8996793B1 (en) | 2012-04-24 | 2015-03-31 | Densbits Technologies Ltd. | System, method and computer readable medium for generating soft information |
US8838937B1 (en) | 2012-05-23 | 2014-09-16 | Densbits Technologies Ltd. | Methods, systems and computer readable medium for writing and reading data |
US8879325B1 (en) | 2012-05-30 | 2014-11-04 | Densbits Technologies Ltd. | System, method and computer program product for processing read threshold information and for reading a flash memory module |
US20130336037A1 (en) | 2012-06-15 | 2013-12-19 | Sandisk 3D Llc | 3d memory having vertical switches with surround gates and method thereof |
US9281029B2 (en) | 2012-06-15 | 2016-03-08 | Sandisk 3D Llc | Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof |
US8750045B2 (en) | 2012-07-27 | 2014-06-10 | Sandisk Technologies Inc. | Experience count dependent program algorithm for flash memory |
US9921954B1 (en) | 2012-08-27 | 2018-03-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for split flash memory management between host and storage controller |
US9368225B1 (en) | 2012-11-21 | 2016-06-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Determining read thresholds based upon read error direction statistics |
US8873284B2 (en) | 2012-12-31 | 2014-10-28 | Sandisk Technologies Inc. | Method and system for program scheduling in a multi-layer memory |
US9348746B2 (en) | 2012-12-31 | 2016-05-24 | Sandisk Technologies | Method and system for managing block reclaim operations in a multi-layer memory |
US9734911B2 (en) | 2012-12-31 | 2017-08-15 | Sandisk Technologies Llc | Method and system for asynchronous die operations in a non-volatile memory |
US9336133B2 (en) | 2012-12-31 | 2016-05-10 | Sandisk Technologies Inc. | Method and system for managing program cycles including maintenance programming operations in a multi-layer memory |
US9465731B2 (en) | 2012-12-31 | 2016-10-11 | Sandisk Technologies Llc | Multi-layer non-volatile memory system having multiple partitions in a layer |
US9223693B2 (en) | 2012-12-31 | 2015-12-29 | Sandisk Technologies Inc. | Memory system having an unequal number of memory die on different control channels |
US9734050B2 (en) | 2012-12-31 | 2017-08-15 | Sandisk Technologies Llc | Method and system for managing background operations in a multi-layer memory |
US9069659B1 (en) | 2013-01-03 | 2015-06-30 | Densbits Technologies Ltd. | Read threshold determination using reference read threshold |
US9064547B2 (en) | 2013-03-05 | 2015-06-23 | Sandisk 3D Llc | 3D non-volatile memory having low-current cells and methods |
US9136876B1 (en) | 2013-06-13 | 2015-09-15 | Densbits Technologies Ltd. | Size limited multi-dimensional decoding |
US9123430B2 (en) | 2013-06-14 | 2015-09-01 | Sandisk 3D Llc | Differential current sense amplifier and method for non-volatile memory |
US8933516B1 (en) | 2013-06-24 | 2015-01-13 | Sandisk 3D Llc | High capacity select switches for three-dimensional structures |
US9413491B1 (en) | 2013-10-08 | 2016-08-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for multiple dimension decoding and encoding a message |
US9786388B1 (en) | 2013-10-09 | 2017-10-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9397706B1 (en) | 2013-10-09 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for irregular multiple dimension decoding and encoding |
US9348694B1 (en) | 2013-10-09 | 2016-05-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9411721B2 (en) | 2013-11-15 | 2016-08-09 | Sandisk Technologies Llc | Detecting access sequences for data compression on non-volatile memory devices |
US9536612B1 (en) | 2014-01-23 | 2017-01-03 | Avago Technologies General Ip (Singapore) Pte. Ltd | Digital signaling processing for three dimensional flash memory arrays |
US10120792B1 (en) | 2014-01-29 | 2018-11-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Programming an embedded flash storage device |
US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
US9123392B1 (en) | 2014-03-28 | 2015-09-01 | Sandisk 3D Llc | Non-volatile 3D memory with cell-selectable word line decoding |
US9542262B1 (en) | 2014-05-29 | 2017-01-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Error correction |
US9892033B1 (en) | 2014-06-24 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of memory units |
US9972393B1 (en) | 2014-07-03 | 2018-05-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accelerating programming of a flash memory module |
US9584159B1 (en) | 2014-07-03 | 2017-02-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Interleaved encoding |
US9449702B1 (en) | 2014-07-08 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power management |
US9691471B2 (en) * | 2014-09-15 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | SRAM cells with vertical gate-all-round MOSFETs |
US10114562B2 (en) | 2014-09-16 | 2018-10-30 | Sandisk Technologies Llc | Adaptive block allocation in nonvolatile memory |
US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
US9524211B1 (en) | 2014-11-18 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Codeword management |
US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
US10305515B1 (en) | 2015-02-02 | 2019-05-28 | Avago Technologies International Sales Pte. Limited | System and method for encoding using multiple linear feedback shift registers |
US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
US10628255B1 (en) | 2015-06-11 | 2020-04-21 | Avago Technologies International Sales Pte. Limited | Multi-dimensional decoding |
US9851921B1 (en) | 2015-07-05 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory chip processing |
US10157681B2 (en) | 2015-09-14 | 2018-12-18 | Sandisk Technologies Llc | Programming of nonvolatile memory with verify level dependent on memory state and programming loop count |
US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
US10042553B2 (en) | 2015-10-30 | 2018-08-07 | Sandisk Technologies Llc | Method and system for programming a multi-layer non-volatile memory having a single fold data path |
US10120613B2 (en) | 2015-10-30 | 2018-11-06 | Sandisk Technologies Llc | System and method for rescheduling host and maintenance operations in a non-volatile memory |
US10133490B2 (en) | 2015-10-30 | 2018-11-20 | Sandisk Technologies Llc | System and method for managing extended maintenance scheduling in a non-volatile memory |
US9778855B2 (en) | 2015-10-30 | 2017-10-03 | Sandisk Technologies Llc | System and method for precision interleaving of data writes in a non-volatile memory |
US9954558B1 (en) | 2016-03-03 | 2018-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fast decoding of data stored in a flash memory |
US9817593B1 (en) | 2016-07-11 | 2017-11-14 | Sandisk Technologies Llc | Block management in non-volatile memory system with non-blocking control sync system |
US10475515B2 (en) | 2017-12-21 | 2019-11-12 | Micron Technology, Inc. | Multi-decks memory device including inter-deck switches |
US11476271B2 (en) * | 2020-11-04 | 2022-10-18 | Macronix International Co., Ltd. | Memory device and manufacturing method thereof |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3979582A (en) | 1974-09-17 | 1976-09-07 | Westinghouse Electric Corporation | Discrete analog processing system including a matrix of memory elements |
JPS5346621B2 (zh) | 1974-10-21 | 1978-12-15 | ||
US4112507A (en) | 1976-01-30 | 1978-09-05 | Westinghouse Electric Corp. | Addressable MNOS cell for non-volatile memories |
US4398248A (en) | 1980-10-20 | 1983-08-09 | Mcdonnell Douglas Corporation | Adaptive WSI/MNOS solid state memory system |
US4173766A (en) | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
SU960953A1 (ru) | 1981-02-06 | 1982-09-23 | Ордена Ленина Физический Институт Им.П.Н.Лебедева | Элемент пам ти |
US4527257A (en) | 1982-08-25 | 1985-07-02 | Westinghouse Electric Corp. | Common memory gate non-volatile transistor memory |
JPS59111370A (ja) | 1982-12-16 | 1984-06-27 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
US5514581A (en) * | 1986-11-04 | 1996-05-07 | Protein Polymer Technologies, Inc. | Functional recombinantly prepared synthetic protein polymer |
US5168334A (en) | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US4870470A (en) | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
US5198996A (en) | 1988-05-16 | 1993-03-30 | Matsushita Electronics Corporation | Semiconductor non-volatile memory device |
US5043940A (en) | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5070032A (en) | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5343063A (en) | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
US5278439A (en) | 1991-08-29 | 1994-01-11 | Ma Yueh Y | Self-aligned dual-bit split gate (DSG) flash EEPROM cell |
JPH05110114A (ja) | 1991-10-17 | 1993-04-30 | Rohm Co Ltd | 不揮発性半導体記憶素子 |
JPH05129624A (ja) | 1991-11-06 | 1993-05-25 | Rohm Co Ltd | 半導体記憶装置 |
JPH05129564A (ja) | 1991-11-06 | 1993-05-25 | Kawasaki Steel Corp | 半導体記憶装置及びその製造方法 |
US5712180A (en) | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5313421A (en) | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
GB9217743D0 (en) | 1992-08-19 | 1992-09-30 | Philips Electronics Uk Ltd | A semiconductor memory device |
US5436481A (en) | 1993-01-21 | 1995-07-25 | Nippon Steel Corporation | MOS-type semiconductor device and method of making the same |
US5424978A (en) | 1993-03-15 | 1995-06-13 | Nippon Steel Corporation | Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same |
US5555204A (en) | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
US5887145A (en) | 1993-09-01 | 1999-03-23 | Sandisk Corporation | Removable mother/daughter peripheral card |
US5440505A (en) | 1994-01-21 | 1995-08-08 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
US5661053A (en) | 1994-05-25 | 1997-08-26 | Sandisk Corporation | Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers |
US5539690A (en) | 1994-06-02 | 1996-07-23 | Intel Corporation | Write verify schemes for flash memory with multilevel cells |
JP3635681B2 (ja) | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
US5705415A (en) * | 1994-10-04 | 1998-01-06 | Motorola, Inc. | Process for forming an electrically programmable read-only memory cell |
US5780470A (en) * | 1995-06-02 | 1998-07-14 | Bristol-Myers Squibb Company | Melatonergic indanyl piperazines |
AU7475196A (en) * | 1995-10-25 | 1997-05-15 | Nvx Corporation | Semiconductor non-volatile memory device having a nand cell structure |
US5903495A (en) | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6054734A (en) | 1996-07-26 | 2000-04-25 | Sony Corporation | Non-volatile memory cell having dual gate electrodes |
KR20000005467A (ko) | 1996-08-01 | 2000-01-25 | 칼 하인쯔 호르닝어 | 저장 셀 장치의 동작 방법 |
US5942787A (en) * | 1996-11-18 | 1999-08-24 | Advanced Micro Devices, Inc. | Small gate electrode MOSFET |
US5889303A (en) | 1997-04-07 | 1999-03-30 | Motorola, Inc. | Split-Control gate electrically erasable programmable read only memory (EEPROM) cell |
GB2325546B (en) | 1997-05-21 | 2001-10-17 | Motorola Inc | Electrically programmable memory and method of programming |
US6297096B1 (en) | 1997-06-11 | 2001-10-02 | Saifun Semiconductors Ltd. | NROM fabrication method |
US5969383A (en) | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
US5824584A (en) | 1997-06-16 | 1998-10-20 | Motorola, Inc. | Method of making and accessing split gate memory device |
IL125604A (en) | 1997-07-30 | 2004-03-28 | Saifun Semiconductors Ltd | Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5851881A (en) | 1997-10-06 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making monos flash memory for multi-level logic |
US5912844A (en) * | 1998-01-28 | 1999-06-15 | Macronix International Co., Ltd. | Method for flash EEPROM data writing |
US6010934A (en) | 1998-03-02 | 2000-01-04 | Texas Instruments - Acer Incorporated | Method of making nanometer Si islands for single electron transistors |
US6030871A (en) | 1998-05-05 | 2000-02-29 | Saifun Semiconductors Ltd. | Process for producing two bit ROM cell utilizing angled implant |
US6218288B1 (en) * | 1998-05-11 | 2001-04-17 | Micron Technology, Inc. | Multiple step methods for forming conformal layers |
US6215148B1 (en) | 1998-05-20 | 2001-04-10 | Saifun Semiconductors Ltd. | NROM cell with improved programming, erasing and cycling |
US6348711B1 (en) | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
US6346725B1 (en) | 1998-05-22 | 2002-02-12 | Winbond Electronics Corporation | Contact-less array of fully self-aligned, triple polysilicon, source-side injection, nonvolatile memory cells with metal-overlaid wordlines |
US5991202A (en) * | 1998-09-24 | 1999-11-23 | Advanced Micro Devices, Inc. | Method for reducing program disturb during self-boosting in a NAND flash memory |
US6281075B1 (en) | 1999-01-27 | 2001-08-28 | Sandisk Corporation | Method of controlling of floating gate oxide growth by use of an oxygen barrier |
US6256231B1 (en) | 1999-02-04 | 2001-07-03 | Tower Semiconductor Ltd. | EEPROM array using 2-bit non-volatile memory cells and method of implementing same |
US6181597B1 (en) | 1999-02-04 | 2001-01-30 | Tower Semiconductor Ltd. | EEPROM array using 2-bit non-volatile memory cells with serial read operations |
US6103573A (en) | 1999-06-30 | 2000-08-15 | Sandisk Corporation | Processing techniques for making a dual floating gate EEPROM cell array |
US6151248A (en) | 1999-06-30 | 2000-11-21 | Sandisk Corporation | Dual floating gate EEPROM cell array with steering gates shared by adjacent cells |
US6255166B1 (en) | 1999-08-05 | 2001-07-03 | Aalo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
US6388293B1 (en) | 1999-10-12 | 2002-05-14 | Halo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, operating method of the same and nonvolatile memory array |
US6091633A (en) | 1999-08-09 | 2000-07-18 | Sandisk Corporation | Memory array architecture utilizing global bit lines shared by multiple cells |
JP3912937B2 (ja) | 1999-08-10 | 2007-05-09 | スパンション インク | 非導電性のチャージトラップゲートを利用した多ビット不揮発性メモリ |
KR100343210B1 (ko) | 1999-08-11 | 2002-07-10 | 윤종용 | 단일 전자 충전 mnos계 메모리 및 그 구동 방법 |
JP2001110918A (ja) | 1999-10-04 | 2001-04-20 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
JP2001148434A (ja) * | 1999-10-12 | 2001-05-29 | New Heiro:Kk | 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ |
US6177318B1 (en) | 1999-10-18 | 2001-01-23 | Halo Lsi Design & Device Technology, Inc. | Integration method for sidewall split gate monos transistor |
US6406960B1 (en) | 1999-10-25 | 2002-06-18 | Advanced Micro Devices, Inc. | Process for fabricating an ONO structure having a silicon-rich silicon nitride layer |
US6248633B1 (en) | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
US6429063B1 (en) | 1999-10-26 | 2002-08-06 | Saifun Semiconductors Ltd. | NROM cell with generally decoupled primary and secondary injection |
JP4923318B2 (ja) | 1999-12-17 | 2012-04-25 | ソニー株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
US6215702B1 (en) | 2000-02-16 | 2001-04-10 | Advanced Micro Devices, Inc. | Method of maintaining constant erasing speeds for non-volatile memory cells |
US6266281B1 (en) | 2000-02-16 | 2001-07-24 | Advanced Micro Devices, Inc. | Method of erasing non-volatile memory cells |
US6331952B1 (en) | 2000-02-16 | 2001-12-18 | Advanced Micro Devices, Inc. | Positive gate erasure for non-volatile memory cells |
US6331953B1 (en) | 2000-02-16 | 2001-12-18 | Advanced Micro Devices | Intelligent ramped gate and ramped drain erasure for non-volatile memory cells |
US6349062B1 (en) | 2000-02-29 | 2002-02-19 | Advanced Micro Devices, Inc. | Selective erasure of a non-volatile memory cell of a flash memory device |
US6366501B1 (en) | 2000-02-29 | 2002-04-02 | Advanced Micro Devices, Inc. | Selective erasure of a non-volatile memory cell of a flash memory device |
US6888750B2 (en) | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
JP3573691B2 (ja) | 2000-07-03 | 2004-10-06 | シャープ株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
TW503528B (en) | 2000-07-12 | 2002-09-21 | Koninkl Philips Electronics Nv | Semiconductor device |
US6487121B1 (en) | 2000-08-25 | 2002-11-26 | Advanced Micro Devices, Inc. | Method of programming a non-volatile memory cell using a vertical electric field |
DE60133619T2 (de) | 2000-12-05 | 2009-06-10 | Halo Lsi Design And Device Technology Inc. | Programmier- und Löschverfahren in Zwilling-MONOS-Zellenspeichern |
TW577082B (en) | 2000-12-15 | 2004-02-21 | Halo Lsi Inc | Fast program to program verify method |
US6445030B1 (en) | 2001-01-30 | 2002-09-03 | Advanced Micro Devices, Inc. | Flash memory erase speed by fluorine implant or fluorination |
JP4325972B2 (ja) | 2001-01-30 | 2009-09-02 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法 |
TW476144B (en) | 2001-02-02 | 2002-02-11 | Macronix Int Co Ltd | Non-volatile memory |
US6531350B2 (en) | 2001-02-22 | 2003-03-11 | Halo, Inc. | Twin MONOS cell fabrication method and array organization |
US6738289B2 (en) | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
US6418062B1 (en) | 2001-03-01 | 2002-07-09 | Halo Lsi, Inc. | Erasing methods by hot hole injection to carrier trap sites of a nonvolatile memory |
ATE458249T1 (de) | 2001-03-15 | 2010-03-15 | Halo Inc | Doppelbit monos speicherzellgebrauch für breite programbandbreite |
KR100375235B1 (ko) | 2001-03-17 | 2003-03-08 | 삼성전자주식회사 | 에스.오.엔.오.에스 플래시 기억소자 및 그 형성 방법 |
US6493266B1 (en) | 2001-04-09 | 2002-12-10 | Advanced Micro Devices, Inc. | Soft program and soft program verify of the core cells in flash memory array |
KR100389130B1 (ko) | 2001-04-25 | 2003-06-25 | 삼성전자주식회사 | 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자 |
US6936887B2 (en) * | 2001-05-18 | 2005-08-30 | Sandisk Corporation | Non-volatile memory cells utilizing substrate trenches |
US6580120B2 (en) | 2001-06-07 | 2003-06-17 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Two bit non-volatile electrically erasable and programmable memory structure, a process for producing said memory structure and methods for programming, reading and erasing said memory structure |
KR100395769B1 (ko) | 2001-06-21 | 2003-08-21 | 삼성전자주식회사 | 비휘발성 메모리 장치의 소거 방법 |
DE10129958B4 (de) | 2001-06-21 | 2006-07-13 | Infineon Technologies Ag | Speicherzellenanordnung und Herstellungsverfahren |
US6436768B1 (en) | 2001-06-27 | 2002-08-20 | Advanced Micro Devices, Inc. | Source drain implant during ONO formation for improved isolation of SONOS devices |
JP4901048B2 (ja) | 2001-06-28 | 2012-03-21 | 三星電子株式会社 | 浮遊トラップ型不揮発性メモリ素子 |
EP1274096B1 (en) | 2001-07-06 | 2007-09-19 | Halo Lsi Design and Device Technology Inc. | Control gate and word line voltage boosting scheme for twin MONOS memory cells |
TW583673B (en) | 2001-07-06 | 2004-04-11 | Halo Lsi Inc | A control gate decoder for twin MONOS memory with two bit erase capability |
US6555865B2 (en) | 2001-07-10 | 2003-04-29 | Samsung Electronics Co. Ltd. | Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same |
US6762092B2 (en) | 2001-08-08 | 2004-07-13 | Sandisk Corporation | Scalable self-aligned dual floating gate memory cell array and methods of forming the array |
KR100407573B1 (ko) | 2001-08-09 | 2003-11-28 | 삼성전자주식회사 | 부유 트랩형 비휘발성 메모리 장치 형성 방법 |
KR100399350B1 (ko) | 2001-08-09 | 2003-09-26 | 삼성전자주식회사 | 부유 트랩형 소자를 가지는 비휘발성 반도체 메모리 장치및 그 제조방법 |
US6670240B2 (en) | 2001-08-13 | 2003-12-30 | Halo Lsi, Inc. | Twin NAND device structure, array operations and fabrication method |
US6593624B2 (en) | 2001-09-25 | 2003-07-15 | Matrix Semiconductor, Inc. | Thin film transistors with vertically offset drain regions |
US6456528B1 (en) | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US6413821B1 (en) | 2001-09-18 | 2002-07-02 | Seiko Epson Corporation | Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit |
KR100454117B1 (ko) | 2001-10-22 | 2004-10-26 | 삼성전자주식회사 | 소노스 게이트 구조를 갖는 낸드형 비휘발성 메모리소자의구동방법 |
DE10153561C2 (de) | 2001-10-30 | 2003-09-04 | Infineon Technologies Ag | Chargetrappingspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
DE10153384B4 (de) | 2001-10-30 | 2007-08-02 | Infineon Technologies Ag | Halbleiterspeicherzelle, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung |
US6897522B2 (en) | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6740940B2 (en) * | 2001-11-27 | 2004-05-25 | Samsung Electronics Co., Ltd. | Semiconductor memory devices having dummy active regions |
US6583007B1 (en) | 2001-12-20 | 2003-06-24 | Saifun Semiconductors Ltd. | Reducing secondary injection effects |
KR100437466B1 (ko) * | 2001-12-27 | 2004-06-23 | 삼성전자주식회사 | 비휘발성 메모리소자 및 그 제조방법 |
US20030134476A1 (en) * | 2002-01-17 | 2003-07-17 | Yakov Roizin | Oxide-nitride-oxide structure |
KR100432888B1 (ko) * | 2002-04-12 | 2004-05-22 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
KR100432889B1 (ko) * | 2002-04-12 | 2004-05-22 | 삼성전자주식회사 | 2비트 기입가능한 비휘발성 메모리 소자, 그 구동방법 및그 제조방법 |
KR100471165B1 (ko) | 2002-05-07 | 2005-03-08 | 삼성전자주식회사 | 평탄하지 않은 게이트 절연막을 구비하는 비휘발성 메모리장치 및 그 제조 방법 |
KR100437453B1 (ko) | 2002-05-23 | 2004-06-23 | 삼성전자주식회사 | 소노스 게이트 구조를 갖는 낸드형 비휘발성 메모리 소자및 그 제조방법 |
US7042045B2 (en) | 2002-06-04 | 2006-05-09 | Samsung Electronics Co., Ltd. | Non-volatile memory cell having a silicon-oxide nitride-oxide-silicon gate structure |
EP1376676A3 (en) | 2002-06-24 | 2008-08-20 | Interuniversitair Microelektronica Centrum Vzw | Multibit non-volatile memory device and method |
KR100475081B1 (ko) * | 2002-07-09 | 2005-03-10 | 삼성전자주식회사 | Sonos형 eeprom 및 그 제조방법 |
KR100493022B1 (ko) * | 2002-07-10 | 2005-06-07 | 삼성전자주식회사 | Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 |
-
2002
- 2002-10-25 US US10/280,352 patent/US6925007B2/en not_active Expired - Lifetime
- 2002-10-31 EP EP07002287.6A patent/EP1777750B1/en not_active Expired - Lifetime
- 2002-10-31 EP EP07002288A patent/EP1777751B1/en not_active Expired - Lifetime
- 2002-10-31 EP EP07002289A patent/EP1777752B1/en not_active Expired - Lifetime
- 2002-10-31 EP EP02784379A patent/EP1446840B1/en not_active Expired - Lifetime
- 2002-10-31 WO PCT/US2002/035132 patent/WO2003038907A1/en active Application Filing
- 2002-10-31 DE DE60219666T patent/DE60219666T2/de not_active Expired - Lifetime
- 2002-10-31 CN CNB028265963A patent/CN100539195C/zh not_active Expired - Lifetime
- 2002-10-31 AT AT02784379T patent/ATE360262T1/de not_active IP Right Cessation
-
2005
- 2005-03-07 US US11/075,427 patent/US7341918B2/en not_active Expired - Lifetime
- 2005-03-07 US US11/075,423 patent/US7342279B2/en not_active Expired - Lifetime
-
2008
- 2008-01-25 US US12/020,296 patent/US7579247B2/en not_active Expired - Lifetime
- 2008-01-25 US US12/020,266 patent/US7479677B2/en not_active Expired - Lifetime
-
2009
- 2009-07-27 US US12/510,077 patent/US7834392B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7479677B2 (en) | 2009-01-20 |
US6925007B2 (en) | 2005-08-02 |
US7579247B2 (en) | 2009-08-25 |
US20050180210A1 (en) | 2005-08-18 |
US20030109093A1 (en) | 2003-06-12 |
EP1777750A3 (en) | 2007-05-16 |
EP1777751A3 (en) | 2007-05-09 |
US20080119026A1 (en) | 2008-05-22 |
EP1777750B1 (en) | 2015-08-05 |
US20080116509A1 (en) | 2008-05-22 |
EP1777752B1 (en) | 2010-12-29 |
EP1777750A2 (en) | 2007-04-25 |
EP1777751A2 (en) | 2007-04-25 |
US20090286370A1 (en) | 2009-11-19 |
US7342279B2 (en) | 2008-03-11 |
EP1446840A4 (en) | 2005-09-07 |
ATE360262T1 (de) | 2007-05-15 |
WO2003038907A1 (en) | 2003-05-08 |
US7834392B2 (en) | 2010-11-16 |
US7341918B2 (en) | 2008-03-11 |
DE60219666D1 (de) | 2007-05-31 |
EP1777751B1 (en) | 2009-08-26 |
CN1610976A (zh) | 2005-04-27 |
EP1777752A3 (en) | 2007-05-16 |
EP1446840A1 (en) | 2004-08-18 |
EP1777752A2 (en) | 2007-04-25 |
US20050157551A1 (en) | 2005-07-21 |
DE60219666T2 (de) | 2007-11-29 |
EP1446840B1 (en) | 2007-04-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100539195C (zh) | 非易失性存储器阵列、非易失性存储器系统和其形成方法 | |
CN101140799B (zh) | 采用电介质存储元件的多态非易失性集成电路存储系统 | |
CN1720588B (zh) | 每一存储单元电荷存储元件具有双重控制栅极的闪速存储单元阵列 | |
CN100547687C (zh) | 用于选择性地编程存储单元的方法及可再编程非易失性存储器系统 | |
US6958938B2 (en) | Data writing method for semiconductor memory device and semiconductor memory device | |
US6181597B1 (en) | EEPROM array using 2-bit non-volatile memory cells with serial read operations | |
US7272040B2 (en) | Multi-bit virtual-ground NAND memory device | |
US6781187B2 (en) | Nonvolatile semiconductor memory device | |
KR19980017439A (ko) | 플래쉬 메모리장치 및 그 구동방법 | |
KR890011092A (ko) | 불휘발성 반도체 기억장치 | |
US7547941B2 (en) | NAND non-volatile two-bit memory and fabrication method | |
EP1256959A2 (en) | Programming method for non-volatile semiconductor memory device comprising twin-memory cells | |
US10381094B2 (en) | 3D memory with staged-level multibit programming | |
US6707695B2 (en) | Nonvolatile semiconductor memory device | |
JP3594001B2 (ja) | 不揮発性半導体記憶装置 | |
US7006378B1 (en) | Array architecture and operation methods for a nonvolatile memory | |
JP3622697B2 (ja) | 不揮発性半導体記憶装置 | |
CN103035293A (zh) | 半导体存储装置 | |
US6650591B2 (en) | Nonvolatile semiconductor memory device | |
US6922357B2 (en) | Non-volatile semiconductor memory device | |
US5355332A (en) | Electrically erasable programmable read-only memory with an array of one-transistor memory cells | |
US6822926B2 (en) | Non-volatile semiconductor memory device | |
JP2003272393A (ja) | ファイルストレージ型不揮発性半導体記憶装置 | |
TW439231B (en) | Multi-level memory cell | |
JP3522836B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120322 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120322 Address after: Texas, USA Patentee after: Sanindisco Technology Co.,Ltd. Address before: california Patentee before: Sandisk Corp. |
|
C56 | Change in the name or address of the patentee |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SANDISK TECHNOLOGIES, INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: Sandy Technology Corp. Address before: Texas, USA Patentee before: Sanindisco Technology Co.,Ltd. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Texas, USA Patentee after: SANDISK TECHNOLOGIES LLC Address before: Texas, USA Patentee before: Sandy Technology Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20090909 |
|
CX01 | Expiry of patent term |