CN100521118C - 显示器件 - Google Patents

显示器件 Download PDF

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Publication number
CN100521118C
CN100521118C CNB2006100778210A CN200610077821A CN100521118C CN 100521118 C CN100521118 C CN 100521118C CN B2006100778210 A CNB2006100778210 A CN B2006100778210A CN 200610077821 A CN200610077821 A CN 200610077821A CN 100521118 C CN100521118 C CN 100521118C
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CN
China
Prior art keywords
region
source
drain
width
resistance region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100778210A
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English (en)
Chinese (zh)
Other versions
CN1855398A (zh
Inventor
小沼利光
广木正明
张宏勇
山本睦夫
竹村保彦
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN1855398A publication Critical patent/CN1855398A/zh
Application granted granted Critical
Publication of CN100521118C publication Critical patent/CN100521118C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10P14/3816—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D64/01316—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H10P14/2922—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

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  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CNB2006100778210A 1993-10-20 1994-10-20 显示器件 Expired - Fee Related CN100521118C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28599093A JPH07135323A (ja) 1993-10-20 1993-10-20 薄膜状半導体集積回路およびその作製方法
JP285990/1993 1993-10-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200310103678.4A Division CN1263160C (zh) 1993-10-20 1994-10-20 显示器件

Publications (2)

Publication Number Publication Date
CN1855398A CN1855398A (zh) 2006-11-01
CN100521118C true CN100521118C (zh) 2009-07-29

Family

ID=17698590

Family Applications (3)

Application Number Title Priority Date Filing Date
CNB2006100778210A Expired - Fee Related CN100521118C (zh) 1993-10-20 1994-10-20 显示器件
CN94112813A Expired - Fee Related CN1058585C (zh) 1993-10-20 1994-10-20 半导体器件
CN98103801A Expired - Lifetime CN1132241C (zh) 1993-10-20 1998-02-06 半导体器件制造方法、驱动器电路和有源矩阵型显示器件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN94112813A Expired - Fee Related CN1058585C (zh) 1993-10-20 1994-10-20 半导体器件
CN98103801A Expired - Lifetime CN1132241C (zh) 1993-10-20 1998-02-06 半导体器件制造方法、驱动器电路和有源矩阵型显示器件

Country Status (6)

Country Link
US (2) US5620905A (cg-RX-API-DMAC10.html)
EP (2) EP1538676A1 (cg-RX-API-DMAC10.html)
JP (1) JPH07135323A (cg-RX-API-DMAC10.html)
KR (1) KR100216940B1 (cg-RX-API-DMAC10.html)
CN (3) CN100521118C (cg-RX-API-DMAC10.html)
TW (1) TW280010B (cg-RX-API-DMAC10.html)

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EP0650197A2 (en) 1995-04-26
EP1538676A1 (en) 2005-06-08
US5608251A (en) 1997-03-04
TW280010B (cg-RX-API-DMAC10.html) 1996-07-01
EP0650197A3 (en) 1997-07-09
CN1192044A (zh) 1998-09-02
JPH07135323A (ja) 1995-05-23
CN1855398A (zh) 2006-11-01
CN1132241C (zh) 2003-12-24
KR100216940B1 (ko) 1999-09-01
US5620905A (en) 1997-04-15
CN1107257A (zh) 1995-08-23

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