CN100463220C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
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- CN100463220C CN100463220C CNB2004100909345A CN200410090934A CN100463220C CN 100463220 C CN100463220 C CN 100463220C CN B2004100909345 A CNB2004100909345 A CN B2004100909345A CN 200410090934 A CN200410090934 A CN 200410090934A CN 100463220 C CN100463220 C CN 100463220C
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- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003384654A JP4707947B2 (ja) | 2003-11-14 | 2003-11-14 | 半導体装置 |
JP384654/2003 | 2003-11-14 |
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CNB2006101431128A Division CN100440482C (zh) | 2003-11-14 | 2004-11-10 | 半导体器件的制造方法 |
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CN1617353A CN1617353A (zh) | 2005-05-18 |
CN100463220C true CN100463220C (zh) | 2009-02-18 |
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CNB2004100909345A Expired - Fee Related CN100463220C (zh) | 2003-11-14 | 2004-11-10 | 半导体器件 |
CNB2006101431128A Expired - Fee Related CN100440482C (zh) | 2003-11-14 | 2004-11-10 | 半导体器件的制造方法 |
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CNB2006101431128A Expired - Fee Related CN100440482C (zh) | 2003-11-14 | 2004-11-10 | 半导体器件的制造方法 |
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US (2) | US7259054B2 (zh) |
JP (1) | JP4707947B2 (zh) |
KR (1) | KR20050046568A (zh) |
CN (2) | CN100463220C (zh) |
TW (1) | TWI359492B (zh) |
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JP4784739B2 (ja) * | 2005-10-21 | 2011-10-05 | セイコーエプソン株式会社 | 半導体装置 |
US8530355B2 (en) * | 2005-12-23 | 2013-09-10 | Infineon Technologies Ag | Mixed orientation semiconductor device and method |
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US8072035B2 (en) | 2007-06-11 | 2011-12-06 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
US8420488B2 (en) * | 2007-09-11 | 2013-04-16 | United Microelectronics Corp. | Method of fabricating high voltage device |
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JP5239548B2 (ja) * | 2008-06-25 | 2013-07-17 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2010062182A (ja) * | 2008-09-01 | 2010-03-18 | Renesas Technology Corp | 半導体集積回路装置 |
JP5147654B2 (ja) * | 2008-11-18 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
KR20100064264A (ko) * | 2008-12-04 | 2010-06-14 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조 방법 |
KR101606930B1 (ko) * | 2008-12-30 | 2016-03-28 | 주식회사 동부하이텍 | 반도체소자 및 그 제조방법 |
CN101710586B (zh) * | 2009-01-09 | 2011-12-28 | 深超光电(深圳)有限公司 | 提高开口率的储存电容及其制作方法 |
JP2011071325A (ja) * | 2009-09-25 | 2011-04-07 | Seiko Instruments Inc | 半導体装置 |
JP2011096862A (ja) * | 2009-10-30 | 2011-05-12 | Hitachi Ltd | 半導体装置及びその製造方法 |
US8222093B2 (en) * | 2010-02-17 | 2012-07-17 | GlobalFoundries, Inc. | Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices |
JP5734725B2 (ja) | 2011-04-27 | 2015-06-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8716768B2 (en) * | 2011-10-20 | 2014-05-06 | Omnivision Technologies, Inc. | Transistor with self-aligned channel width |
JP5481526B2 (ja) * | 2012-06-13 | 2014-04-23 | ラピスセミコンダクタ株式会社 | 高耐圧電界効果トランジスタ |
CN104425376A (zh) * | 2013-08-28 | 2015-03-18 | 北大方正集团有限公司 | Cmos管的制造方法及cmos管 |
JP6341802B2 (ja) * | 2014-08-21 | 2018-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9831134B1 (en) | 2016-09-28 | 2017-11-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device having deep wells |
JP7156811B2 (ja) * | 2018-03-26 | 2022-10-19 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
CN110890421A (zh) * | 2018-09-10 | 2020-03-17 | 长鑫存储技术有限公司 | 半导体器件 |
CN112825327A (zh) * | 2019-11-21 | 2021-05-21 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
CN112349733B (zh) * | 2020-09-09 | 2022-09-06 | 湖北长江新型显示产业创新中心有限公司 | 阵列基板、阵列基板的制造方法及显示装置 |
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- 2004-11-10 CN CNB2004100909345A patent/CN100463220C/zh not_active Expired - Fee Related
- 2004-11-10 CN CNB2006101431128A patent/CN100440482C/zh not_active Expired - Fee Related
- 2004-11-11 KR KR1020040091812A patent/KR20050046568A/ko not_active Application Discontinuation
- 2004-11-15 US US10/986,896 patent/US7259054B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
KR20050046568A (ko) | 2005-05-18 |
TWI359492B (en) | 2012-03-01 |
CN1953159A (zh) | 2007-04-25 |
CN1617353A (zh) | 2005-05-18 |
TW200527652A (en) | 2005-08-16 |
US20080258236A1 (en) | 2008-10-23 |
US20050104098A1 (en) | 2005-05-19 |
CN100440482C (zh) | 2008-12-03 |
JP4707947B2 (ja) | 2011-06-22 |
JP2005150331A (ja) | 2005-06-09 |
US7592669B2 (en) | 2009-09-22 |
US7259054B2 (en) | 2007-08-21 |
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