KR100817084B1 - 고전압 트랜지스터 및 그 제조방법 - Google Patents
고전압 트랜지스터 및 그 제조방법 Download PDFInfo
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- KR100817084B1 KR100817084B1 KR1020070011251A KR20070011251A KR100817084B1 KR 100817084 B1 KR100817084 B1 KR 100817084B1 KR 1020070011251 A KR1020070011251 A KR 1020070011251A KR 20070011251 A KR20070011251 A KR 20070011251A KR 100817084 B1 KR100817084 B1 KR 100817084B1
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- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000002955 isolation Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000005204 segregation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (25)
- 반도체기판;상기 반도체기판에 활성영역을 정의하는 소자분리막;상기 반도체기판 상에 소정의 폭을 유지하면서 상기 활성영역의 중앙부위를 따라 연장되는 게이트전극; 및상기 게이트전극 양측의 상기 반도체기판에 형성되며, 부분적으로 상기 소자분리막의 하부로 확장되는 제2 웰을 포함하고,상기 활성영역은상기 게이트전극의 하부에 위치하면서, 소자분리막을 분리시키는 제1 활성영역; 및상기 제1 활성영역과 상기 소자분리막에 의해 한정되는 제2 활성영역으로 이루어진 고전압 트랜지스터.
- 제1항에 있어서, 상기 소자분리막은 소자분리에 충분한 깊이로 형성된 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 소자분리막은 HDP 산화막으로 이루어진 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 게이트전극은 상기 제1 활성영역을 덮는 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 제2 웰은 부분적으로 상기 게이트전극의 양측 하부로 확장되는 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 제1 활성영역은 트랜지스터의 종류에 따라 폭(w)과 길이(ℓ)가 정해지는 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 제1 활성영역의 상면은 상기 제2 활성영역의 상면과 동일한 레벨을 이루는 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 제2 웰 내에는 상기 게이트전극과 소정의 거리만큼 이격되어 배치된 소스/드레인 영역을 더 포함하는 것을 특징으로 하는 고전압 트랜지스터.
- 제8항에 있어서, 상기 제2 웰과 상기 소스/드레인 영역은 동일한 도전형의 불순물이 도핑된 것을 특징으로 하는 고전압 트랜지스터.
- 제9항에 있어서, 상기 불순물은 주기율표에서 5족 원소를 포함하는 것을 특징으로 하는 고전압 트랜지스터.
- 제1항에 있어서, 상기 반도체기판의 상부에 상기 활성영역과 소자분리막을 수용하는 제1 웰을 더 포함하는 것을 특징으로 하는 고전압 트랜지스터.
- 제11항에 있어서, 상기 제1 웰에 도핑된 불순물은 상기 제2 웰과 반대되는 도전형인 것을 특징으로 하는 고전압 트랜지스터.
- 제12항에 있어서, 상기 불순물은 주기율표에서 3족 원소를 포함하는 것을 특징으로 하는 고전압 트랜지스터.
- 제13항에 있어서, 상기 불순물은 보론(B)인 것을 특징으로 하는 고전압 트랜지스터.
- 제12항에 있어서, 상기 제2 웰의 도핑농도는 상기 제1 웰의 도핑농도보다 큰 것을 특징으로 하는 고전압 트랜지스터.
- 반도체기판에 활성영역을 정의하는 소자분리막을 형성하는 단계;상기 반도체기판의 활성영역의 양측에 형성되며, 부분적으로 상기 소자분리막의 하부로 확장되는 제2 웰을 형성하는 단계; 및상기 반도체기판 상에 소정의 폭을 유지하면서 상기 활성영역의 중앙부위를 따라 연장되는 게이트전극을 형성하는 단계를 포함하고,상기 활성영역은상기 게이트전극의 하부에 위치하면서, 상기 소자분리막을 분리시키는 제1 활성영역; 및상기 제1 활성영역과 상기 소자분리막에 의해 한정되는 제2 활성영역으로 이루어진 고전압 트랜지스터의 제조방법.
- 제16항에 있어서, 상기 게이트전극은 상기 제1 활성영역을 덮는 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제16항에 있어서, 상기 제2 웰은 부분적으로 상기 게이트전극의 양측 하부로 확장되는 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제16항에 있어서, 상기 제1 활성영역은 트랜지스터의 종류에 따라 폭(w)과 길이(ℓ)가 정해지는 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제16항에 있어서, 상기 제2 웰 내에는 상기 게이트전극과 소정의 거리만큼 이격되어 배치된 소스/드레인 영역을 더 포함하는 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제20항에 있어서, 상기 제2 웰과 상기 소스/드레인 영역은 동일한 도전형의 불순물이 도핑된 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제16항에 있어서, 상기 반도체기판의 상부에 상기 활성영역과 소자분리막을 수용하기 위한 제1 웰을 더 포함하는 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제22항에 있어서, 상기 제1 웰에 도핑된 불순물은 상기 제2 웰과 반대되는 도전형인 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제23항에 있어서, 상기 불순물은 보론(B)인 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
- 제24항에 있어서, 상기 제2 웰의 도핑농도는 상기 제1 웰의 도핑농도보가 큰 것을 특징으로 하는 고전압 트랜지스터의 제조방법.
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KR1020070011251A KR100817084B1 (ko) | 2007-02-02 | 2007-02-02 | 고전압 트랜지스터 및 그 제조방법 |
TW097100989A TWI446533B (zh) | 2007-02-02 | 2008-01-10 | 高壓電晶體 |
US12/014,244 US7705409B2 (en) | 2007-02-02 | 2008-01-15 | High voltage transistors |
EP08000819A EP1953827A3 (en) | 2007-02-02 | 2008-01-17 | High voltage transistor and method of manufacturing the same |
CNA200810009221XA CN101236986A (zh) | 2007-02-02 | 2008-01-29 | 高压晶体管及其制造方法 |
JP2008023708A JP5495359B2 (ja) | 2007-02-02 | 2008-02-04 | 高電圧トランジスタ及びその製造方法 |
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US8338906B2 (en) * | 2008-01-30 | 2012-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Schottky device |
CN102479815A (zh) * | 2010-11-29 | 2012-05-30 | 上海华虹Nec电子有限公司 | 高压非对称晶体管结构及其制备方法 |
US9059268B2 (en) * | 2012-02-15 | 2015-06-16 | Tsinghua University | Tunneling field effect transistor and method for fabricating the same |
CN102569363B (zh) * | 2012-02-15 | 2016-03-23 | 清华大学 | 一种耐高压隧穿晶体管及其制备方法 |
FR3011678B1 (fr) * | 2013-10-07 | 2017-01-27 | St Microelectronics Crolles 2 Sas | Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant |
KR102167625B1 (ko) * | 2013-10-24 | 2020-10-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN106997904B (zh) * | 2017-04-17 | 2020-01-07 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、栅极驱动电路 |
CN113838925B (zh) * | 2021-09-23 | 2024-04-09 | 长江存储科技有限责任公司 | 一种半导体器件及其制备方法 |
EP4199117A4 (en) * | 2021-10-18 | 2023-08-23 | Changxin Memory Technologies, Inc. | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF AND USE THEREOF |
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EP1953827A3 (en) | 2009-07-29 |
EP1953827A2 (en) | 2008-08-06 |
US7705409B2 (en) | 2010-04-27 |
CN101236986A (zh) | 2008-08-06 |
US20080185664A1 (en) | 2008-08-07 |
JP5495359B2 (ja) | 2014-05-21 |
JP2008193093A (ja) | 2008-08-21 |
TW200834926A (en) | 2008-08-16 |
TWI446533B (zh) | 2014-07-21 |
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