JP2008193093A - 高電圧トランジスタ及びその製造方法 - Google Patents
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- 238000002955 isolation Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 21
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 239000001301 oxygen Substances 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体基板上に所定の幅を維持しつつ活性領域の中央部位に沿って延びるゲート電極の両側の半導体基板に形成され、部分的に素子分離膜の下部に拡張して形成される第2ウェルを備え、活性領域は、ゲート電極の下部に位置しつつ素子分離膜を離隔させる第1活性領域及び第1活性領域と素子分離膜により限定される第2活性領域を備える高電圧トランジスタ及びその製造方法である。
【選択図】図3
Description
前記半導体基板内の前記活性領域は、前記ゲート電極の下部に位置し、前記素子分離膜を離隔させる第1活性領域と、前記第1活性領域と前記素子分離膜とにより限定される第2活性領域からなることを特徴とする。
前記素子分離膜は、素子分離に十分な深さに形成され、
前記素子分離膜は、HDP酸化膜を含み、
前記ゲート電極は、前記第1活性領域の全体表面上に形成され、
前記第2ウェルは、部分的に前記ゲート電極の両側下部に拡張して形成され、
前記第1活性領域は、トランジスタの種類によって、幅と長さとが決まり、
前記第1活性領域の上面は、前記第2活性領域の上面と同じレベルをなし、
前記第2ウェル内には、前記ゲート電極と離隔されて配置されたソース/ドレイン領域をさらに含み、
前記第2ウェルと前記ソース/ドレイン領域とは、同じ導電型の不純物がドーピングさ
れ、
前記不純物は、周期律表で5族元素を含むことが好ましい。
前記第1ウェルにドーピングされた不純物は、前記第2ウェルとは反対の導電型であり、
前記不純物は、周期律表で3族元素を含み、
前記不純物は、ボロン(B)を含み、
前記第2ウェルのドーピング濃度は、前記第1ウェルのドーピング濃度より大きいことが好ましい。
前記半導体基板の活性領域の両側に形成され、部分的に前記素子分離膜の下部に拡張される第2ウェルを形成する段階と、
前記半導体基板上に所定の幅を維持し、前記活性領域の中央部位に沿って延びるゲート電極を形成する段階とを有し、
前記活性領域は、
前記ゲート電極の下部に位置し、前記素子分離膜を離隔させる第1活性領域と、
前記第1活性領域と前記素子分離膜とにより限定される前記第2活性領域と、からなることを特徴とする。
前記ゲート電極は、前記第1活性領域を覆い、
前記第2ウェルは、部分的に前記ゲート電極の両側下部に拡張して形成され、
前記第1活性領域は、トランジスタの種類によって、幅と長さとが決まり、
前記第2ウェル内には、前記ゲート電極と所定距離だけ離隔して配置されたソース/ドレイン領域をさらに含み、
前記第2ウェルと前記ソース/ドレイン領域は、同じ導電型の不純物がドーピングされ、
前記半導体基板の上部に、前記活性領域と前記素子分離膜とを受容するための第1ウェルを形成する段階をさらに有し、
前記第1ウェルにドーピングされた不純物は、前記第2ウェルと反対の導電型であり、
前記不純物は、ボロン(B)を含み、
前記第2ウェルのドーピング濃度は、前記第1ウェルのドーピング濃度より大きいことが好ましい。
12,102 第1ウェル
14,114 第2ウェル
18,118 シリサイド層
20,120 素子分離膜
30,130 活性領域
40,140 ゲート絶縁膜
42,142 ゲート電極
108 パッドマスク
112 素子分離領域
116 ソース/ドレイン領域
130a 第1活性領域
130b 第2活性領域
132 チャンネル領域
Claims (25)
- 半導体基板と、
前記半導体基板に活性領域を定義する素子分離膜と、
前記半導体基板上に所定の幅を維持し、前記活性領域の中央部位に沿って延びるゲート電極と、
前記ゲート電極両側の前記半導体基板に形成され、部分的に前記素子分離膜の下部に拡張されて形成される第2ウェルとを備え、
前記半導体基板内の前記活性領域は、
前記ゲート電極の下部に位置し、前記素子分離膜を離隔させる第1活性領域と、
前記第1活性領域と前記素子分離膜とにより限定される第2活性領域と、とからなることを特徴とする高電圧トランジスタ。 - 前記素子分離膜は、素子分離に十分な深さに形成されることを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記素子分離膜は、HDP酸化膜を含むことを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記ゲート電極は、前記第1活性領域の全体表面上に形成されることを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第2ウェルは、部分的に前記ゲート電極の両側下部に拡張して形成されることを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第1活性領域は、トランジスタの種類によって、幅と長さとが決まることを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第1活性領域の上面は、前記第2活性領域の上面と同じレベルをなすことを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第2ウェル内には、前記ゲート電極と離隔されて配置されたソース/ドレイン領域をさらに含むことを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第2ウェルと前記ソース/ドレイン領域とは、同じ導電型の不純物がドーピングされることを特徴とする請求項8に記載の高電圧トランジスタ。
- 前記不純物は、周期律表で5族元素を含むことを特徴とする請求項9に記載の高電圧トランジスタ。
- 前記半導体基板の上部に、前記活性領域と前記素子分離膜とを受容する第1ウェルをさらに備えることを特徴とする請求項1に記載の高電圧トランジスタ。
- 前記第1ウェルにドーピングされた不純物は、前記第2ウェルとは反対の導電型であることを特徴とする請求項11に記載の高電圧トランジスタ。
- 前記不純物は、周期律表で3族元素を含むことを特徴とする請求項12に記載の高電圧トランジスタ。
- 前記不純物は、ボロン(B)を含むことを特徴とする請求項13に記載の高電圧トランジスタ。
- 前記第2ウェルのドーピング濃度は、前記第1ウェルのドーピング濃度より大きいことを特徴とする請求項12に記載の高電圧トランジスタ。
- 半導体基板に活性領域を定義する素子分離膜を形成する段階と、
前記半導体基板の活性領域の両側に形成され、部分的に前記素子分離膜の下部に拡張される第2ウェルを形成する段階と、
前記半導体基板上に所定の幅を維持し、前記活性領域の中央部位に沿って延びるゲート電極を形成する段階とを有し、
前記活性領域は、
前記ゲート電極の下部に位置し、前記素子分離膜を離隔させる第1活性領域と、
前記第1活性領域と前記素子分離膜とにより限定される第2活性領域と、からなることを特徴とする高電圧トランジスタの製造方法。 - 前記ゲート電極は、前記第1活性領域を覆うことを特徴とする請求項16に記載の高電圧トランジスタの製造方法。
- 前記第2ウェルは、部分的に前記ゲート電極の両側下部に拡張されて形成されることを特徴とする請求項16に記載の高電圧トランジスタの製造方法。
- 前記第1活性領域は、トランジスタの種類によって、幅と長さとが決まることを特徴とする請求項16に記載の高電圧トランジスタの製造方法。
- 前記第2ウェル内には、前記ゲート電極と所定距離だけ離隔されて配置されたソース/ドレイン領域をさらに含むことを特徴とする請求項16に記載の高電圧トランジスタの製造方法。
- 前記第2ウェルと前記ソース/ドレイン領域は、同じ導電型の不純物がドーピングされたことを特徴とする請求項20に記載の高電圧トランジスタの製造方法。
- 前記半導体基板の上部に、前記活性領域と前記素子分離膜とを受容するための第1ウェルを形成する段階をさらに有することを特徴とする請求項16に記載の高電圧トランジスタの製造方法。
- 前記第1ウェルにドーピングされた不純物は、前記第2ウェルとは反対の導電型であることを特徴とする請求項22に記載の高電圧トランジスタの製造方法。
- 前記不純物は、ボロン(B)を含むことを特徴とする請求項23に記載の高電圧トランジスタの製造方法。
- 前記第2ウェルのドーピング濃度は、前記第1ウェルのドーピング濃度より大きいことを特徴とする請求項24に記載の高電圧トランジスタの製造方法。
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CN102479815A (zh) * | 2010-11-29 | 2012-05-30 | 上海华虹Nec电子有限公司 | 高压非对称晶体管结构及其制备方法 |
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US9059268B2 (en) * | 2012-02-15 | 2015-06-16 | Tsinghua University | Tunneling field effect transistor and method for fabricating the same |
FR3011678B1 (fr) * | 2013-10-07 | 2017-01-27 | St Microelectronics Crolles 2 Sas | Procede de relaxation des contraites mecaniques transversales dans la region active d'un transistor mos, et circuit integre correspondant |
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