CN100397660C - 利用多晶硅的薄膜晶体管制造方法 - Google Patents

利用多晶硅的薄膜晶体管制造方法 Download PDF

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Publication number
CN100397660C
CN100397660C CNB028252799A CN02825279A CN100397660C CN 100397660 C CN100397660 C CN 100397660C CN B028252799 A CNB028252799 A CN B028252799A CN 02825279 A CN02825279 A CN 02825279A CN 100397660 C CN100397660 C CN 100397660C
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CN
China
Prior art keywords
slit pattern
thin film
semiconductor layer
polysilicon
along
Prior art date
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Expired - Lifetime
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CNB028252799A
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English (en)
Chinese (zh)
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CN1639872A (zh
Inventor
宋溱镐
崔埈厚
崔凡洛
姜明求
姜淑映
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1639872A publication Critical patent/CN1639872A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
CNB028252799A 2001-12-17 2002-01-29 利用多晶硅的薄膜晶体管制造方法 Expired - Lifetime CN100397660C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2001/80074 2001-12-17
KR1020010080074A KR100831227B1 (ko) 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법

Publications (2)

Publication Number Publication Date
CN1639872A CN1639872A (zh) 2005-07-13
CN100397660C true CN100397660C (zh) 2008-06-25

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Family Applications (1)

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CNB028252799A Expired - Lifetime CN100397660C (zh) 2001-12-17 2002-01-29 利用多晶硅的薄膜晶体管制造方法

Country Status (6)

Country Link
US (1) US7229860B2 (enExample)
JP (1) JP4034732B2 (enExample)
KR (1) KR100831227B1 (enExample)
CN (1) CN100397660C (enExample)
AU (1) AU2002230241A1 (enExample)
WO (1) WO2003052833A1 (enExample)

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KR100796758B1 (ko) * 2001-11-14 2008-01-22 삼성전자주식회사 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법
KR100947180B1 (ko) * 2003-06-03 2010-03-15 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
KR100753568B1 (ko) * 2003-06-30 2007-08-30 엘지.필립스 엘시디 주식회사 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법
US7524728B2 (en) * 2004-11-08 2009-04-28 Sanyo Electric Co., Ltd. Thin film transistor manufacturing method and organic electroluminescent display device
CN102272816B (zh) * 2008-11-05 2014-07-02 奈克斯特生物测定学公司 通过降低噪声的差分通道的用于大型传感器阵列的电压读取技术
KR101886318B1 (ko) 2009-01-06 2018-08-09 넥스트 바이오메트릭스 그룹 에이에스에이 능동 센서 어레이용 저 노이즈 판독 구조
US20110068342A1 (en) * 2009-09-18 2011-03-24 Themistokles Afentakis Laser Process for Minimizing Variations in Transistor Threshold Voltages
KR101666661B1 (ko) 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
KR20130006945A (ko) * 2011-06-27 2013-01-18 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조방법
CN103762178A (zh) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
CN104752203A (zh) * 2013-12-27 2015-07-01 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管的制作方法
KR101463032B1 (ko) * 2014-02-05 2014-11-19 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
CN105702742A (zh) * 2016-02-25 2016-06-22 深圳市华星光电技术有限公司 氧化物薄膜晶体管及其制备方法

Citations (8)

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US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US5160408A (en) * 1990-04-27 1992-11-03 Micron Technology, Inc. Method of isotropically dry etching a polysilicon containing runner with pulsed power
US6074954A (en) * 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
KR20000040705A (ko) * 1998-12-19 2000-07-05 구본준 폴리실리콘-박막트랜지스터소자 및 그 제조방법
US6184068B1 (en) * 1994-06-02 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US6207483B1 (en) * 2000-03-17 2001-03-27 Taiwan Semiconductor Manufacturing Company Method for smoothing polysilicon gate structures in CMOS devices
US6258638B1 (en) * 1997-03-03 2001-07-10 Nec Corporation Method of manufacturing thin film transistor
CN1312591A (zh) * 2000-03-07 2001-09-12 三菱电机株式会社 半导体装置、液晶显示装置及其制造方法

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JPH05226654A (ja) 1992-02-17 1993-09-03 Toshiba Corp Ｔｆｔアレイのエッチング加工方法
JP3250589B2 (ja) 1994-05-26 2002-01-28 日特建設株式会社 吹付機用自動プラント
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2000133634A (ja) 1998-10-23 2000-05-12 Toshiba Corp 多結晶シリコン薄膜を平坦化する方法
JP4588833B2 (ja) * 1999-04-07 2010-12-01 株式会社半導体エネルギー研究所 電気光学装置および電子機器
JP2001023918A (ja) * 1999-07-08 2001-01-26 Nec Corp 半導体薄膜形成装置
US6509217B1 (en) * 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
JP4322373B2 (ja) * 1999-11-15 2009-08-26 日本電気株式会社 膜体部改質装置及び膜体部改質方法
KR100400510B1 (ko) * 2000-12-28 2003-10-08 엘지.필립스 엘시디 주식회사 실리콘 결정화 장치와 실리콘 결정화 방법
JP3859978B2 (ja) * 2001-02-28 2006-12-20 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置
US20050037550A1 (en) * 2001-10-15 2005-02-17 Myung-Koo Kang Thin film transistor using polysilicon and a method for manufacturing the same
US6767804B2 (en) * 2001-11-08 2004-07-27 Sharp Laboratories Of America, Inc. 2N mask design and method of sequential lateral solidification
KR100885013B1 (ko) * 2002-01-03 2009-02-20 삼성전자주식회사 박막 트랜지스터 및 액정 표시 장치
KR100707026B1 (ko) * 2003-11-26 2007-04-11 비오이 하이디스 테크놀로지 주식회사 비정질실리콘막의 결정화 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US5160408A (en) * 1990-04-27 1992-11-03 Micron Technology, Inc. Method of isotropically dry etching a polysilicon containing runner with pulsed power
US6184068B1 (en) * 1994-06-02 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US6258638B1 (en) * 1997-03-03 2001-07-10 Nec Corporation Method of manufacturing thin film transistor
US6074954A (en) * 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
KR20000040705A (ko) * 1998-12-19 2000-07-05 구본준 폴리실리콘-박막트랜지스터소자 및 그 제조방법
CN1312591A (zh) * 2000-03-07 2001-09-12 三菱电机株式会社 半导体装置、液晶显示装置及其制造方法
US6207483B1 (en) * 2000-03-17 2001-03-27 Taiwan Semiconductor Manufacturing Company Method for smoothing polysilicon gate structures in CMOS devices

Also Published As

Publication number Publication date
AU2002230241A1 (en) 2003-06-30
JP2005513785A (ja) 2005-05-12
JP4034732B2 (ja) 2008-01-16
KR100831227B1 (ko) 2008-05-21
CN1639872A (zh) 2005-07-13
US7229860B2 (en) 2007-06-12
US20050130357A1 (en) 2005-06-16
KR20030049764A (ko) 2003-06-25
WO2003052833A1 (en) 2003-06-26

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Owner name: SAMSUNG DISPLAY CO., LTD.

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Effective date: 20130105

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Address after: Gyeonggi Do, South Korea

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Granted publication date: 20080625

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