KR100831227B1 - 다결정 규소를 이용한 박막 트랜지스터의 제조 방법 - Google Patents

다결정 규소를 이용한 박막 트랜지스터의 제조 방법 Download PDF

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Publication number
KR100831227B1
KR100831227B1 KR1020010080074A KR20010080074A KR100831227B1 KR 100831227 B1 KR100831227 B1 KR 100831227B1 KR 1020010080074 A KR1020010080074 A KR 1020010080074A KR 20010080074 A KR20010080074 A KR 20010080074A KR 100831227 B1 KR100831227 B1 KR 100831227B1
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South Korea
Prior art keywords
thin film
regions
slit
silicon thin
polycrystalline silicon
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KR1020010080074A
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English (en)
Korean (ko)
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KR20030049764A (ko
Inventor
송진호
최준후
최범락
강명구
강숙영
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삼성전자주식회사
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Priority to KR1020010080074A priority Critical patent/KR100831227B1/ko
Priority to JP2003553631A priority patent/JP4034732B2/ja
Priority to AU2002230241A priority patent/AU2002230241A1/en
Priority to US10/499,090 priority patent/US7229860B2/en
Priority to PCT/KR2002/000131 priority patent/WO2003052833A1/en
Priority to CNB028252799A priority patent/CN100397660C/zh
Publication of KR20030049764A publication Critical patent/KR20030049764A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020010080074A 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법 Expired - Lifetime KR100831227B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020010080074A KR100831227B1 (ko) 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법
JP2003553631A JP4034732B2 (ja) 2001-12-17 2002-01-29 多結晶シリコンを利用した薄膜トランジスタの製造方法
AU2002230241A AU2002230241A1 (en) 2001-12-17 2002-01-29 A method for manufacturing a thin film transistor using poly silicon
US10/499,090 US7229860B2 (en) 2001-12-17 2002-01-29 Method for manufacturing a thin film transistor using poly silicon
PCT/KR2002/000131 WO2003052833A1 (en) 2001-12-17 2002-01-29 A method for manufacturing a thin film transistor using poly silicon
CNB028252799A CN100397660C (zh) 2001-12-17 2002-01-29 利用多晶硅的薄膜晶体管制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010080074A KR100831227B1 (ko) 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법

Publications (2)

Publication Number Publication Date
KR20030049764A KR20030049764A (ko) 2003-06-25
KR100831227B1 true KR100831227B1 (ko) 2008-05-21

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KR1020010080074A Expired - Lifetime KR100831227B1 (ko) 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법

Country Status (6)

Country Link
US (1) US7229860B2 (enExample)
JP (1) JP4034732B2 (enExample)
KR (1) KR100831227B1 (enExample)
CN (1) CN100397660C (enExample)
AU (1) AU2002230241A1 (enExample)
WO (1) WO2003052833A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796758B1 (ko) * 2001-11-14 2008-01-22 삼성전자주식회사 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법
KR100947180B1 (ko) * 2003-06-03 2010-03-15 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
KR100753568B1 (ko) * 2003-06-30 2007-08-30 엘지.필립스 엘시디 주식회사 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법
US7524728B2 (en) * 2004-11-08 2009-04-28 Sanyo Electric Co., Ltd. Thin film transistor manufacturing method and organic electroluminescent display device
CN102272816B (zh) * 2008-11-05 2014-07-02 奈克斯特生物测定学公司 通过降低噪声的差分通道的用于大型传感器阵列的电压读取技术
KR101886318B1 (ko) 2009-01-06 2018-08-09 넥스트 바이오메트릭스 그룹 에이에스에이 능동 센서 어레이용 저 노이즈 판독 구조
US20110068342A1 (en) * 2009-09-18 2011-03-24 Themistokles Afentakis Laser Process for Minimizing Variations in Transistor Threshold Voltages
KR101666661B1 (ko) 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
KR20130006945A (ko) * 2011-06-27 2013-01-18 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조방법
CN103762178A (zh) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
CN104752203A (zh) * 2013-12-27 2015-07-01 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管的制作方法
KR101463032B1 (ko) * 2014-02-05 2014-11-19 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
CN105702742A (zh) * 2016-02-25 2016-06-22 深圳市华星光电技术有限公司 氧化物薄膜晶体管及其制备方法

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KR20000040705A (ko) * 1998-12-19 2000-07-05 구본준 폴리실리콘-박막트랜지스터소자 및 그 제조방법

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US5160408A (en) 1990-04-27 1992-11-03 Micron Technology, Inc. Method of isotropically dry etching a polysilicon containing runner with pulsed power
JPH05226654A (ja) 1992-02-17 1993-09-03 Toshiba Corp Ｔｆｔアレイのエッチング加工方法
JP3250589B2 (ja) 1994-05-26 2002-01-28 日特建設株式会社 吹付機用自動プラント
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JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
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JP2000133634A (ja) 1998-10-23 2000-05-12 Toshiba Corp 多結晶シリコン薄膜を平坦化する方法
JP4588833B2 (ja) * 1999-04-07 2010-12-01 株式会社半導体エネルギー研究所 電気光学装置および電子機器
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JP3859978B2 (ja) * 2001-02-28 2006-12-20 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置
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KR100885013B1 (ko) * 2002-01-03 2009-02-20 삼성전자주식회사 박막 트랜지스터 및 액정 표시 장치
KR100707026B1 (ko) * 2003-11-26 2007-04-11 비오이 하이디스 테크놀로지 주식회사 비정질실리콘막의 결정화 방법

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Publication number Priority date Publication date Assignee Title
US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
KR20000040705A (ko) * 1998-12-19 2000-07-05 구본준 폴리실리콘-박막트랜지스터소자 및 그 제조방법

Also Published As

Publication number Publication date
CN100397660C (zh) 2008-06-25
JP4034732B2 (ja) 2008-01-16
CN1639872A (zh) 2005-07-13
KR20030049764A (ko) 2003-06-25
WO2003052833A1 (en) 2003-06-26
US7229860B2 (en) 2007-06-12
US20050130357A1 (en) 2005-06-16
JP2005513785A (ja) 2005-05-12
AU2002230241A1 (en) 2003-06-30

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