JP2005513785A5 - - Google Patents
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- Publication number
- JP2005513785A5 JP2005513785A5 JP2003553631A JP2003553631A JP2005513785A5 JP 2005513785 A5 JP2005513785 A5 JP 2005513785A5 JP 2003553631 A JP2003553631 A JP 2003553631A JP 2003553631 A JP2003553631 A JP 2003553631A JP 2005513785 A5 JP2005513785 A5 JP 2005513785A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- slit
- manufacturing
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 82
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 239000007790 solid phase Substances 0.000 claims description 19
- 238000001312 dry etching Methods 0.000 claims description 18
- 238000002425 crystallisation Methods 0.000 claims description 17
- 230000008025 crystallization Effects 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229910020177 SiOF Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- -1 SiOC Inorganic materials 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020010080074A KR100831227B1 (ko) | 2001-12-17 | 2001-12-17 | 다결정 규소를 이용한 박막 트랜지스터의 제조 방법 |
| PCT/KR2002/000131 WO2003052833A1 (en) | 2001-12-17 | 2002-01-29 | A method for manufacturing a thin film transistor using poly silicon |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005513785A JP2005513785A (ja) | 2005-05-12 |
| JP2005513785A5 true JP2005513785A5 (enExample) | 2007-08-16 |
| JP4034732B2 JP4034732B2 (ja) | 2008-01-16 |
Family
ID=19717122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003553631A Expired - Lifetime JP4034732B2 (ja) | 2001-12-17 | 2002-01-29 | 多結晶シリコンを利用した薄膜トランジスタの製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7229860B2 (enExample) |
| JP (1) | JP4034732B2 (enExample) |
| KR (1) | KR100831227B1 (enExample) |
| CN (1) | CN100397660C (enExample) |
| AU (1) | AU2002230241A1 (enExample) |
| WO (1) | WO2003052833A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100796758B1 (ko) * | 2001-11-14 | 2008-01-22 | 삼성전자주식회사 | 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법 |
| KR100947180B1 (ko) * | 2003-06-03 | 2010-03-15 | 엘지디스플레이 주식회사 | 폴리실리콘 박막트랜지스터의 제조방법 |
| KR100753568B1 (ko) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
| US7524728B2 (en) * | 2004-11-08 | 2009-04-28 | Sanyo Electric Co., Ltd. | Thin film transistor manufacturing method and organic electroluminescent display device |
| US8734008B2 (en) * | 2008-11-05 | 2014-05-27 | Next Biometrics As | Voltage reading technique for large sensor arrays through reduced noise differential path |
| KR101886318B1 (ko) | 2009-01-06 | 2018-08-09 | 넥스트 바이오메트릭스 그룹 에이에스에이 | 능동 센서 어레이용 저 노이즈 판독 구조 |
| US20110068342A1 (en) * | 2009-09-18 | 2011-03-24 | Themistokles Afentakis | Laser Process for Minimizing Variations in Transistor Threshold Voltages |
| KR101666661B1 (ko) | 2010-08-26 | 2016-10-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 평판 표시 장치 |
| KR20130006945A (ko) * | 2011-06-27 | 2013-01-18 | 삼성디스플레이 주식회사 | 평판 표시 장치 및 그 제조방법 |
| CN103762178A (zh) * | 2013-12-25 | 2014-04-30 | 深圳市华星光电技术有限公司 | 一种低温多晶硅薄膜晶体管及其制造方法 |
| CN104752203A (zh) * | 2013-12-27 | 2015-07-01 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜晶体管的制作方法 |
| KR101463032B1 (ko) * | 2014-02-05 | 2014-11-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| CN105702742A (zh) * | 2016-02-25 | 2016-06-22 | 深圳市华星光电技术有限公司 | 氧化物薄膜晶体管及其制备方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4214946A (en) * | 1979-02-21 | 1980-07-29 | International Business Machines Corporation | Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant |
| US5160408A (en) * | 1990-04-27 | 1992-11-03 | Micron Technology, Inc. | Method of isotropically dry etching a polysilicon containing runner with pulsed power |
| JPH05226654A (ja) * | 1992-02-17 | 1993-09-03 | Toshiba Corp | Ｔｆｔアレイのエッチング加工方法 |
| JP3250589B2 (ja) | 1994-05-26 | 2002-01-28 | 日特建設株式会社 | 吹付機用自動プラント |
| US6326248B1 (en) * | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
| JP3621151B2 (ja) * | 1994-06-02 | 2005-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH09213630A (ja) * | 1996-02-05 | 1997-08-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US5998838A (en) * | 1997-03-03 | 1999-12-07 | Nec Corporation | Thin film transistor |
| US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
| JP2000133634A (ja) * | 1998-10-23 | 2000-05-12 | Toshiba Corp | 多結晶シリコン薄膜を平坦化する方法 |
| KR100325629B1 (ko) * | 1998-12-19 | 2002-08-21 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘-박막트랜지스터소자 및 그 제조방법, |
| JP4588833B2 (ja) | 1999-04-07 | 2010-12-01 | 株式会社半導体エネルギー研究所 | 電気光学装置および電子機器 |
| JP2001023918A (ja) * | 1999-07-08 | 2001-01-26 | Nec Corp | 半導体薄膜形成装置 |
| US6509217B1 (en) * | 1999-10-22 | 2003-01-21 | Damoder Reddy | Inexpensive, reliable, planar RFID tag structure and method for making same |
| JP4322373B2 (ja) | 1999-11-15 | 2009-08-26 | 日本電気株式会社 | 膜体部改質装置及び膜体部改質方法 |
| JP4057215B2 (ja) * | 2000-03-07 | 2008-03-05 | 三菱電機株式会社 | 半導体装置の製造方法および液晶表示装置の製造方法 |
| US6207483B1 (en) * | 2000-03-17 | 2001-03-27 | Taiwan Semiconductor Manufacturing Company | Method for smoothing polysilicon gate structures in CMOS devices |
| KR100400510B1 (ko) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 실리콘 결정화 장치와 실리콘 결정화 방법 |
| JP3859978B2 (ja) * | 2001-02-28 | 2006-12-20 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置 |
| US20050037550A1 (en) * | 2001-10-15 | 2005-02-17 | Myung-Koo Kang | Thin film transistor using polysilicon and a method for manufacturing the same |
| US6767804B2 (en) * | 2001-11-08 | 2004-07-27 | Sharp Laboratories Of America, Inc. | 2N mask design and method of sequential lateral solidification |
| KR100885013B1 (ko) * | 2002-01-03 | 2009-02-20 | 삼성전자주식회사 | 박막 트랜지스터 및 액정 표시 장치 |
| KR100707026B1 (ko) * | 2003-11-26 | 2007-04-11 | 비오이 하이디스 테크놀로지 주식회사 | 비정질실리콘막의 결정화 방법 |
-
2001
- 2001-12-17 KR KR1020010080074A patent/KR100831227B1/ko not_active Expired - Lifetime
-
2002
- 2002-01-29 WO PCT/KR2002/000131 patent/WO2003052833A1/en not_active Ceased
- 2002-01-29 AU AU2002230241A patent/AU2002230241A1/en not_active Abandoned
- 2002-01-29 CN CNB028252799A patent/CN100397660C/zh not_active Expired - Lifetime
- 2002-01-29 US US10/499,090 patent/US7229860B2/en not_active Expired - Lifetime
- 2002-01-29 JP JP2003553631A patent/JP4034732B2/ja not_active Expired - Lifetime
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