JP4034732B2 - 多結晶シリコンを利用した薄膜トランジスタの製造方法 - Google Patents

多結晶シリコンを利用した薄膜トランジスタの製造方法 Download PDF

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Publication number
JP4034732B2
JP4034732B2 JP2003553631A JP2003553631A JP4034732B2 JP 4034732 B2 JP4034732 B2 JP 4034732B2 JP 2003553631 A JP2003553631 A JP 2003553631A JP 2003553631 A JP2003553631 A JP 2003553631A JP 4034732 B2 JP4034732 B2 JP 4034732B2
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Japan
Prior art keywords
thin film
film transistor
manufacturing
slit
polycrystalline silicon
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Expired - Lifetime
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JP2003553631A
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Japanese (ja)
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JP2005513785A5 (enExample
JP2005513785A (ja
Inventor
ソン，ジャン−ホ
チョイ，ジョン−ホ
チョイ，ボム−ラク
カン，ミュン−コ
カン，ソク−ヨン
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2003553631A 2001-12-17 2002-01-29 多結晶シリコンを利用した薄膜トランジスタの製造方法 Expired - Lifetime JP4034732B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020010080074A KR100831227B1 (ko) 2001-12-17 2001-12-17 다결정 규소를 이용한 박막 트랜지스터의 제조 방법
PCT/KR2002/000131 WO2003052833A1 (en) 2001-12-17 2002-01-29 A method for manufacturing a thin film transistor using poly silicon

Publications (3)

Publication Number Publication Date
JP2005513785A JP2005513785A (ja) 2005-05-12
JP2005513785A5 JP2005513785A5 (enExample) 2007-08-16
JP4034732B2 true JP4034732B2 (ja) 2008-01-16

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Family Applications (1)

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JP2003553631A Expired - Lifetime JP4034732B2 (ja) 2001-12-17 2002-01-29 多結晶シリコンを利用した薄膜トランジスタの製造方法

Country Status (6)

Country Link
US (1) US7229860B2 (enExample)
JP (1) JP4034732B2 (enExample)
KR (1) KR100831227B1 (enExample)
CN (1) CN100397660C (enExample)
AU (1) AU2002230241A1 (enExample)
WO (1) WO2003052833A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR100796758B1 (ko) * 2001-11-14 2008-01-22 삼성전자주식회사 다결정 규소용 마스크 및 이를 이용한 박막 트랜지스터의제조 방법
KR100947180B1 (ko) * 2003-06-03 2010-03-15 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
KR100753568B1 (ko) * 2003-06-30 2007-08-30 엘지.필립스 엘시디 주식회사 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법
US7524728B2 (en) * 2004-11-08 2009-04-28 Sanyo Electric Co., Ltd. Thin film transistor manufacturing method and organic electroluminescent display device
WO2010053894A1 (en) * 2008-11-05 2010-05-14 Next Biometrics As Voltage reading technique for large sensor arrays through reduced noise differential path
US9060146B2 (en) 2009-01-06 2015-06-16 Next Biometrics Group Asa Low noise reading architecture for active sensor arrays
US20110068342A1 (en) * 2009-09-18 2011-03-24 Themistokles Afentakis Laser Process for Minimizing Variations in Transistor Threshold Voltages
KR101666661B1 (ko) 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
KR20130006945A (ko) * 2011-06-27 2013-01-18 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조방법
CN103762178A (zh) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
CN104752203A (zh) * 2013-12-27 2015-07-01 昆山工研院新型平板显示技术中心有限公司 一种薄膜晶体管的制作方法
KR101463032B1 (ko) * 2014-02-05 2014-11-19 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
CN105702742A (zh) * 2016-02-25 2016-06-22 深圳市华星光电技术有限公司 氧化物薄膜晶体管及其制备方法

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US4214946A (en) * 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US5160408A (en) * 1990-04-27 1992-11-03 Micron Technology, Inc. Method of isotropically dry etching a polysilicon containing runner with pulsed power
JPH05226654A (ja) 1992-02-17 1993-09-03 Toshiba Corp Ｔｆｔアレイのエッチング加工方法
JP3250589B2 (ja) 1994-05-26 2002-01-28 日特建設株式会社 吹付機用自動プラント
JP3621151B2 (ja) * 1994-06-02 2005-02-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JPH09213630A (ja) * 1996-02-05 1997-08-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US5998838A (en) * 1997-03-03 1999-12-07 Nec Corporation Thin film transistor
US6074954A (en) * 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
JP2000133634A (ja) 1998-10-23 2000-05-12 Toshiba Corp 多結晶シリコン薄膜を平坦化する方法
KR100325629B1 (ko) * 1998-12-19 2002-08-21 엘지.필립스 엘시디 주식회사 폴리실리콘-박막트랜지스터소자 및 그 제조방법,
JP4588833B2 (ja) 1999-04-07 2010-12-01 株式会社半導体エネルギー研究所 電気光学装置および電子機器
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JP3859978B2 (ja) * 2001-02-28 2006-12-20 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体材料膜に横方向に延在する結晶領域を形成する装置
WO2003034503A1 (en) * 2001-10-15 2003-04-24 Samsung Electronics Co., Ltd. A thin film transistor using polysilicon and a method for manufacturing the same
US6767804B2 (en) * 2001-11-08 2004-07-27 Sharp Laboratories Of America, Inc. 2N mask design and method of sequential lateral solidification
KR100885013B1 (ko) * 2002-01-03 2009-02-20 삼성전자주식회사 박막 트랜지스터 및 액정 표시 장치
KR100707026B1 (ko) * 2003-11-26 2007-04-11 비오이 하이디스 테크놀로지 주식회사 비정질실리콘막의 결정화 방법

Also Published As

Publication number Publication date
US20050130357A1 (en) 2005-06-16
CN100397660C (zh) 2008-06-25
KR100831227B1 (ko) 2008-05-21
AU2002230241A1 (en) 2003-06-30
KR20030049764A (ko) 2003-06-25
CN1639872A (zh) 2005-07-13
US7229860B2 (en) 2007-06-12
JP2005513785A (ja) 2005-05-12
WO2003052833A1 (en) 2003-06-26

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