CN100381932C - 薄膜晶体管 - Google Patents

薄膜晶体管 Download PDF

Info

Publication number
CN100381932C
CN100381932C CNB031202926A CN03120292A CN100381932C CN 100381932 C CN100381932 C CN 100381932C CN B031202926 A CNB031202926 A CN B031202926A CN 03120292 A CN03120292 A CN 03120292A CN 100381932 C CN100381932 C CN 100381932C
Authority
CN
China
Prior art keywords
region
semiconductor layer
channel region
thin film
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031202926A
Other languages
English (en)
Chinese (zh)
Other versions
CN1450662A (zh
Inventor
是成贵弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Liguid Crystal Advanced Technology Development Center K K
Original Assignee
Liguid Crystal Advanced Technology Development Center K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Liguid Crystal Advanced Technology Development Center K K filed Critical Liguid Crystal Advanced Technology Development Center K K
Publication of CN1450662A publication Critical patent/CN1450662A/zh
Application granted granted Critical
Publication of CN100381932C publication Critical patent/CN100381932C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CNB031202926A 2002-03-29 2003-03-06 薄膜晶体管 Expired - Fee Related CN100381932C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002094665A JP2003298059A (ja) 2002-03-29 2002-03-29 薄膜トランジスタ
JP2002094665 2002-03-29

Publications (2)

Publication Number Publication Date
CN1450662A CN1450662A (zh) 2003-10-22
CN100381932C true CN100381932C (zh) 2008-04-16

Family

ID=28449701

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031202926A Expired - Fee Related CN100381932C (zh) 2002-03-29 2003-03-06 薄膜晶体管

Country Status (5)

Country Link
US (1) US6753549B2 (enExample)
JP (1) JP2003298059A (enExample)
KR (1) KR100512753B1 (enExample)
CN (1) CN100381932C (enExample)
TW (1) TW583770B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005228819A (ja) * 2004-02-10 2005-08-25 Mitsubishi Electric Corp 半導体装置
TW200601566A (en) * 2004-06-28 2006-01-01 Adv Lcd Tech Dev Ct Co Ltd Semiconductor apparatus and manufacturing method thereof
JP4964442B2 (ja) * 2005-08-10 2012-06-27 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR101226974B1 (ko) * 2006-05-03 2013-01-28 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
JP5111802B2 (ja) 2006-07-20 2013-01-09 三菱電機株式会社 薄膜トランジスタ基板、及びその製造方法
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI418036B (zh) * 2006-12-05 2013-12-01 Semiconductor Energy Lab 半導體裝置及其製造方法
JP5117711B2 (ja) * 2006-12-15 2013-01-16 三菱電機株式会社 表示装置とその製造方法
JP5110888B2 (ja) * 2007-01-25 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5201841B2 (ja) * 2007-01-25 2013-06-05 株式会社半導体エネルギー研究所 表示装置の作製方法
US8067771B2 (en) * 2007-02-21 2011-11-29 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
JP2009147355A (ja) * 2009-02-02 2009-07-02 Advanced Lcd Technologies Development Center Co Ltd 薄膜トランジスタ
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
US9035315B2 (en) * 2010-04-30 2015-05-19 Sharp Kabushiki Kaisha Semiconductor device, display device, and method for manufacturing semiconductor device
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN108269822B (zh) * 2016-12-29 2022-05-13 乐金显示有限公司 电致发光显示设备及其制备方法
CN112397579B (zh) * 2020-10-22 2022-12-06 云谷（固安）科技有限公司 显示面板
CN115692427B (zh) * 2022-11-14 2025-07-18 武汉华星光电技术有限公司 显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546376A (en) * 1983-09-30 1985-10-08 Citizen Watch Co., Ltd. Device for semiconductor integrated circuits
JPH08255915A (ja) * 1995-03-15 1996-10-01 Toshiba Corp 液晶表示装置
US5739574A (en) * 1994-12-19 1998-04-14 Sharp Kabushiki Kaisha SOI semiconductor device with low concentration of electric field around the mesa type silicon
US6184556B1 (en) * 1997-07-04 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07176753A (ja) * 1993-12-17 1995-07-14 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JPH08330599A (ja) * 1994-11-29 1996-12-13 Sanyo Electric Co Ltd 薄膜トランジスタ、その製造方法及び表示装置
JP3751469B2 (ja) * 1999-04-26 2006-03-01 沖電気工業株式会社 Ｓｏｉ構造の半導体装置の製造方法
JP2001223366A (ja) * 2000-02-10 2001-08-17 Seiko Epson Corp アクティブマトリクス基板及びその製造方法、並びに電気光学装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546376A (en) * 1983-09-30 1985-10-08 Citizen Watch Co., Ltd. Device for semiconductor integrated circuits
US5739574A (en) * 1994-12-19 1998-04-14 Sharp Kabushiki Kaisha SOI semiconductor device with low concentration of electric field around the mesa type silicon
JPH08255915A (ja) * 1995-03-15 1996-10-01 Toshiba Corp 液晶表示装置
US6184556B1 (en) * 1997-07-04 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JP2003298059A (ja) 2003-10-17
CN1450662A (zh) 2003-10-22
KR100512753B1 (ko) 2005-09-07
US20030183857A1 (en) 2003-10-02
KR20030078638A (ko) 2003-10-08
US6753549B2 (en) 2004-06-22
TW583770B (en) 2004-04-11
TW200304705A (en) 2003-10-01

Similar Documents

Publication Publication Date Title
CN100381932C (zh) 薄膜晶体管
CN103730508B (zh) 显示面板的垂直式薄膜晶体管结构及其制作方法
CN1941416B (zh) Ldmos器件及其制造方法
CN106449763B (zh) 一种薄膜晶体管及制造方法和显示器面板
JP2008311636A5 (enExample)
CN1753156A (zh) 制造薄膜晶体管的方法
US7507612B2 (en) Flat panel display and fabrication method thereof
US8598651B2 (en) Semiconductor device with transistor having gate insulating film with various thicknesses and manufacturing method thereof
CN1290191C (zh) 集成电路器件及其制造方法
TW201007951A (en) Display device and manufacturing method thereof
CN100405614C (zh) 薄膜晶体管
CN106024637B (zh) 薄膜晶体管及其制作方法
CN106876465A (zh) Mos器件的栅氧化层结构及工艺方法
JPS62200767A (ja) Ｍｏｓ型半導体装置
CN104253158A (zh) 薄膜晶体管及其制造方法
TW201501322A (zh) 薄膜晶體管及其製造方法
TWI422035B (zh) 半導體元件結構及其製造方法
CN106611794B (zh) 薄膜晶体管及其制作方法
CN115411054A (zh) 阵列基板及其制备方法和显示装置
TW548850B (en) Low-temperature polysilicon TFT of LDD structure and process for producing same
KR100833595B1 (ko) 돌기형 트랜지스터 및 그 제조방법
KR100611743B1 (ko) 멀티플 게이트 박막 트랜지스터
JP5090693B2 (ja) 表示装置とその製造方法
JP2007142287A (ja) 回路素子、半導体装置、表示装置及び回路素子の製造方法
CN109256429B (zh) 氧化物半导体薄膜晶体管及其制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080416