JP2008311636A5 - - Google Patents

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Publication number
JP2008311636A5
JP2008311636A5 JP2008126115A JP2008126115A JP2008311636A5 JP 2008311636 A5 JP2008311636 A5 JP 2008311636A5 JP 2008126115 A JP2008126115 A JP 2008126115A JP 2008126115 A JP2008126115 A JP 2008126115A JP 2008311636 A5 JP2008311636 A5 JP 2008311636A5
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JP
Japan
Prior art keywords
layer
crystal semiconductor
single crystal
forming
insulating
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JP2008126115A
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English (en)
Japanese (ja)
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JP5352122B2 (ja
JP2008311636A (ja
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Priority claimed from JP2008126115A external-priority patent/JP5352122B2/ja
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Publication of JP2008311636A5 publication Critical patent/JP2008311636A5/ja
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JP2008126115A 2007-05-17 2008-05-13 半導体装置の作製方法 Expired - Fee Related JP5352122B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008126115A JP5352122B2 (ja) 2007-05-17 2008-05-13 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007131590 2007-05-17
JP2007131590 2007-05-17
JP2008126115A JP5352122B2 (ja) 2007-05-17 2008-05-13 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008311636A JP2008311636A (ja) 2008-12-25
JP2008311636A5 true JP2008311636A5 (enExample) 2011-06-02
JP5352122B2 JP5352122B2 (ja) 2013-11-27

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JP2008126115A Expired - Fee Related JP5352122B2 (ja) 2007-05-17 2008-05-13 半導体装置の作製方法

Country Status (3)

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US (2) US7799620B2 (enExample)
JP (1) JP5352122B2 (enExample)
KR (1) KR101457656B1 (enExample)

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JP5404064B2 (ja) 2008-01-16 2014-01-29 株式会社半導体エネルギー研究所 レーザ処理装置、および半導体基板の作製方法
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KR101084175B1 (ko) * 2009-11-23 2011-11-17 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
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US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
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US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US9611544B2 (en) * 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
KR101845480B1 (ko) 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
KR102207992B1 (ko) 2012-10-23 2021-01-26 램 리써치 코포레이션 서브-포화된 원자층 증착 및 등각막 증착
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TWI611582B (zh) 2013-04-10 2018-01-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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US9478438B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US9478411B2 (en) 2014-08-20 2016-10-25 Lam Research Corporation Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS
KR102314467B1 (ko) * 2014-10-13 2021-10-20 삼성디스플레이 주식회사 디스플레이 장치 및 디스플레이 장치 제조 방법
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US10526701B2 (en) 2015-07-09 2020-01-07 Lam Research Corporation Multi-cycle ALD process for film uniformity and thickness profile modulation
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US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
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