JP2006013481A5 - - Google Patents
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- Publication number
- JP2006013481A5 JP2006013481A5 JP2005154865A JP2005154865A JP2006013481A5 JP 2006013481 A5 JP2006013481 A5 JP 2006013481A5 JP 2005154865 A JP2005154865 A JP 2005154865A JP 2005154865 A JP2005154865 A JP 2005154865A JP 2006013481 A5 JP2006013481 A5 JP 2006013481A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor region
- gate electrode
- region
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 93
- 239000010408 film Substances 0.000 claims 75
- 239000012535 impurity Substances 0.000 claims 14
- 239000002245 particle Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005154865A JP4942950B2 (ja) | 2004-05-28 | 2005-05-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004160353 | 2004-05-28 | ||
| JP2004160353 | 2004-05-28 | ||
| JP2005154865A JP4942950B2 (ja) | 2004-05-28 | 2005-05-27 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006013481A JP2006013481A (ja) | 2006-01-12 |
| JP2006013481A5 true JP2006013481A5 (enExample) | 2008-07-03 |
| JP4942950B2 JP4942950B2 (ja) | 2012-05-30 |
Family
ID=35780281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005154865A Expired - Fee Related JP4942950B2 (ja) | 2004-05-28 | 2005-05-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4942950B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7692223B2 (en) | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
| JP5285235B2 (ja) * | 2006-04-28 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7791172B2 (en) | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| JP2008305871A (ja) * | 2007-06-05 | 2008-12-18 | Spansion Llc | 半導体装置およびその製造方法 |
| KR101520284B1 (ko) | 2007-06-25 | 2015-05-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| KR101404439B1 (ko) | 2007-06-29 | 2014-06-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 장치 및 전자 기기 |
| US9117916B2 (en) * | 2011-10-13 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film |
| US8637864B2 (en) | 2011-10-13 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| WO2019046106A1 (en) * | 2017-08-29 | 2019-03-07 | Micron Technology, Inc. | DEVICES AND SYSTEMS WITH CHAIN DRIVERS COMPRISING HIGH BANNED MATERIAL AND METHODS OF FORMATION |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4880283A (enExample) * | 1972-01-28 | 1973-10-27 | ||
| JP2924622B2 (ja) * | 1993-12-28 | 1999-07-26 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH1187545A (ja) * | 1997-07-08 | 1999-03-30 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
| JP4538693B2 (ja) * | 1998-01-26 | 2010-09-08 | ソニー株式会社 | メモリ素子およびその製造方法 |
| JPH11297963A (ja) * | 1998-04-10 | 1999-10-29 | Toshiba Corp | 電荷蓄積容量素子及びその製造方法、半導体記憶装置及びこれを用いたｉｄカード |
| JP2000081642A (ja) * | 1998-07-06 | 2000-03-21 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
| GB2364823A (en) * | 2000-07-12 | 2002-02-06 | Seiko Epson Corp | TFT memory device having gate insulator with charge-trapping granules |
| US6531731B2 (en) * | 2001-06-15 | 2003-03-11 | Motorola, Inc. | Integration of two memory types on the same integrated circuit |
| JP3983105B2 (ja) * | 2002-05-29 | 2007-09-26 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| US6833307B1 (en) * | 2002-10-30 | 2004-12-21 | Advanced Micro Devices, Inc. | Method for manufacturing a semiconductor component having an early halo implant |
-
2005
- 2005-05-27 JP JP2005154865A patent/JP4942950B2/ja not_active Expired - Fee Related
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