JP2006245167A5 - - Google Patents
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- Publication number
- JP2006245167A5 JP2006245167A5 JP2005056971A JP2005056971A JP2006245167A5 JP 2006245167 A5 JP2006245167 A5 JP 2006245167A5 JP 2005056971 A JP2005056971 A JP 2005056971A JP 2005056971 A JP2005056971 A JP 2005056971A JP 2006245167 A5 JP2006245167 A5 JP 2006245167A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- semiconductor substrate
- mosfet
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005056971A JP2006245167A (ja) | 2005-03-02 | 2005-03-02 | 半導体装置及びその製造方法 |
| US11/364,552 US20060237788A1 (en) | 2005-03-02 | 2006-03-01 | Semiconductor device and its fabrication method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005056971A JP2006245167A (ja) | 2005-03-02 | 2005-03-02 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006245167A JP2006245167A (ja) | 2006-09-14 |
| JP2006245167A5 true JP2006245167A5 (enExample) | 2008-03-06 |
Family
ID=37051293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005056971A Pending JP2006245167A (ja) | 2005-03-02 | 2005-03-02 | 半導体装置及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20060237788A1 (enExample) |
| JP (1) | JP2006245167A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691690B2 (en) * | 2007-01-12 | 2010-04-06 | International Business Machines Corporation | Methods for forming dual fully silicided gates over fins of FinFet devices |
| JP5190250B2 (ja) * | 2007-11-02 | 2013-04-24 | パナソニック株式会社 | 半導体装置 |
| US7951678B2 (en) * | 2008-08-12 | 2011-05-31 | International Business Machines Corporation | Metal-gate high-k reference structure |
| JP5989538B2 (ja) | 2012-12-25 | 2016-09-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US9224607B2 (en) * | 2013-09-18 | 2015-12-29 | Globalfoundries Inc. | Dual epitaxy region integration |
| CN105990421A (zh) * | 2015-01-29 | 2016-10-05 | 无锡华润上华半导体有限公司 | 半导体器件及其制备方法 |
| US10163900B2 (en) | 2017-02-08 | 2018-12-25 | Globalfoundries Inc. | Integration of vertical field-effect transistors and saddle fin-type field effect transistors |
| US20180342507A1 (en) * | 2017-05-25 | 2018-11-29 | Globalfoundries Inc. | Integration of vertical-transport transistors and high-voltage transistors |
| KR102342550B1 (ko) * | 2017-06-09 | 2021-12-23 | 삼성전자주식회사 | 반도체 장치 |
| US10777465B2 (en) | 2018-01-11 | 2020-09-15 | Globalfoundries Inc. | Integration of vertical-transport transistors and planar transistors |
| US11404410B2 (en) * | 2020-04-29 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having different voltage regions |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125650A (ja) * | 1983-01-07 | 1984-07-20 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6066854A (ja) * | 1983-09-24 | 1985-04-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
| US5399507A (en) * | 1994-06-27 | 1995-03-21 | Motorola, Inc. | Fabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applications |
| JP2001060630A (ja) * | 1999-08-23 | 2001-03-06 | Nec Corp | 半導体装置の製造方法 |
| JP2002118263A (ja) * | 2000-10-05 | 2002-04-19 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP2002217307A (ja) * | 2001-01-19 | 2002-08-02 | Nec Corp | 半導体装置及びその製造方法 |
| JP3980985B2 (ja) * | 2002-10-04 | 2007-09-26 | 株式会社東芝 | 半導体装置とその製造方法 |
| US6706581B1 (en) * | 2002-10-29 | 2004-03-16 | Taiwan Semiconductor Manufacturing Company | Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices |
| JP4457688B2 (ja) * | 2004-02-12 | 2010-04-28 | ソニー株式会社 | 半導体装置 |
| TWI252539B (en) * | 2004-03-12 | 2006-04-01 | Toshiba Corp | Semiconductor device and manufacturing method therefor |
| US6897095B1 (en) * | 2004-05-12 | 2005-05-24 | Freescale Semiconductor, Inc. | Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode |
-
2005
- 2005-03-02 JP JP2005056971A patent/JP2006245167A/ja active Pending
-
2006
- 2006-03-01 US US11/364,552 patent/US20060237788A1/en not_active Abandoned