JP4942950B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4942950B2
JP4942950B2 JP2005154865A JP2005154865A JP4942950B2 JP 4942950 B2 JP4942950 B2 JP 4942950B2 JP 2005154865 A JP2005154865 A JP 2005154865A JP 2005154865 A JP2005154865 A JP 2005154865A JP 4942950 B2 JP4942950 B2 JP 4942950B2
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Japan
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region
semiconductor
film
semiconductor region
insulating film
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Expired - Fee Related
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JP2005154865A
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Japanese (ja)
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JP2006013481A5 (enExample
JP2006013481A (ja
Inventor
舜平 山崎
敦生 磯部
哲司 山口
宏充 郷戸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005154865A priority Critical patent/JP4942950B2/ja
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Publication of JP2006013481A5 publication Critical patent/JP2006013481A5/ja
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  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP2005154865A 2004-05-28 2005-05-27 半導体装置の作製方法 Expired - Fee Related JP4942950B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005154865A JP4942950B2 (ja) 2004-05-28 2005-05-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004160353 2004-05-28
JP2004160353 2004-05-28
JP2005154865A JP4942950B2 (ja) 2004-05-28 2005-05-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006013481A JP2006013481A (ja) 2006-01-12
JP2006013481A5 JP2006013481A5 (enExample) 2008-07-03
JP4942950B2 true JP4942950B2 (ja) 2012-05-30

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Family Applications (1)

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JP2005154865A Expired - Fee Related JP4942950B2 (ja) 2004-05-28 2005-05-27 半導体装置の作製方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7692223B2 (en) 2006-04-28 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing the same
JP5285235B2 (ja) * 2006-04-28 2013-09-11 株式会社半導体エネルギー研究所 半導体装置
US7791172B2 (en) 2007-03-19 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP2008305871A (ja) * 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
KR101520284B1 (ko) 2007-06-25 2015-05-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101404439B1 (ko) 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
US9117916B2 (en) * 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
WO2019046106A1 (en) * 2017-08-29 2019-03-07 Micron Technology, Inc. DEVICES AND SYSTEMS WITH CHAIN DRIVERS COMPRISING HIGH BANNED MATERIAL AND METHODS OF FORMATION

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880283A (enExample) * 1972-01-28 1973-10-27
JP2924622B2 (ja) * 1993-12-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
JPH1187545A (ja) * 1997-07-08 1999-03-30 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
JPH11297963A (ja) * 1998-04-10 1999-10-29 Toshiba Corp 電荷蓄積容量素子及びその製造方法、半導体記憶装置及びこれを用いたｉｄカード
JP2000081642A (ja) * 1998-07-06 2000-03-21 Hitachi Ltd 液晶表示装置およびその製造方法
GB2364823A (en) * 2000-07-12 2002-02-06 Seiko Epson Corp TFT memory device having gate insulator with charge-trapping granules
US6531731B2 (en) * 2001-06-15 2003-03-11 Motorola, Inc. Integration of two memory types on the same integrated circuit
JP3983105B2 (ja) * 2002-05-29 2007-09-26 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
US6833307B1 (en) * 2002-10-30 2004-12-21 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having an early halo implant

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JP2006013481A (ja) 2006-01-12

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