CN100353488C - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
- Publication number
- CN100353488C CN100353488C CNB200410096239XA CN200410096239A CN100353488C CN 100353488 C CN100353488 C CN 100353488C CN B200410096239X A CNB200410096239X A CN B200410096239XA CN 200410096239 A CN200410096239 A CN 200410096239A CN 100353488 C CN100353488 C CN 100353488C
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- resist
- semiconductor substrate
- semiconductor device
- manufacture method
- liquid
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 22
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003394249 | 2003-11-25 | ||
JP2003394249 | 2003-11-25 | ||
JP2004324601 | 2004-11-09 | ||
JP2004324601A JP2005183937A (ja) | 2003-11-25 | 2004-11-09 | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622281A CN1622281A (zh) | 2005-06-01 |
CN100353488C true CN100353488C (zh) | 2007-12-05 |
Family
ID=34752037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410096239XA Expired - Fee Related CN100353488C (zh) | 2003-11-25 | 2004-11-25 | 半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050158671A1 (zh) |
JP (1) | JP2005183937A (zh) |
CN (1) | CN100353488C (zh) |
TW (1) | TWI270921B (zh) |
Families Citing this family (44)
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US20050124160A1 (en) * | 2003-12-05 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Novel multi-gate formation procedure for gate oxide quality improvement |
US20070002296A1 (en) * | 2005-06-30 | 2007-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography defect reduction |
JP4672487B2 (ja) * | 2005-08-26 | 2011-04-20 | 大日本スクリーン製造株式会社 | レジスト除去方法およびレジスト除去装置 |
JP4799084B2 (ja) * | 2005-09-01 | 2011-10-19 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
JP4840020B2 (ja) * | 2005-10-14 | 2011-12-21 | ソニー株式会社 | 基板の処理方法 |
JP4986566B2 (ja) * | 2005-10-14 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4787086B2 (ja) * | 2006-06-23 | 2011-10-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4787089B2 (ja) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2008028268A (ja) * | 2006-07-24 | 2008-02-07 | Nomura Micro Sci Co Ltd | 基板の乾燥方法 |
JP4863897B2 (ja) * | 2007-01-31 | 2012-01-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム |
JP5148889B2 (ja) | 2007-02-09 | 2013-02-20 | 株式会社東芝 | 洗浄方法及び電子デバイスの製造方法 |
WO2009087492A1 (en) * | 2008-01-09 | 2009-07-16 | Freescale Semiconductor, Inc. | Semiconductor processing method |
JP5251977B2 (ja) * | 2008-06-02 | 2013-07-31 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄方法 |
US8652266B2 (en) * | 2008-07-24 | 2014-02-18 | Lam Research Corporation | Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications |
JP2010205782A (ja) * | 2009-02-27 | 2010-09-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2012146690A (ja) * | 2009-03-31 | 2012-08-02 | Kurita Water Ind Ltd | 電子材料洗浄方法及び電子材料洗浄装置 |
US8845812B2 (en) * | 2009-06-12 | 2014-09-30 | Micron Technology, Inc. | Method for contamination removal using magnetic particles |
US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
CN101794089B (zh) * | 2010-04-12 | 2012-06-13 | 常州瑞择微电子科技有限公司 | 电子束胶光掩模板的去胶方法及其装置 |
KR101809927B1 (ko) * | 2011-07-11 | 2017-12-18 | 쿠리타 고교 가부시키가이샤 | 메탈 게이트 반도체의 세정 방법 |
KR102005485B1 (ko) | 2011-11-04 | 2019-07-31 | 삼성디스플레이 주식회사 | 표시 패널 |
JP5661598B2 (ja) * | 2011-11-22 | 2015-01-28 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US8940103B2 (en) * | 2012-03-06 | 2015-01-27 | Tokyo Electron Limited | Sequential stage mixing for single substrate strip processing |
CN103426748A (zh) * | 2012-05-14 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 光刻胶层去除方法及刻蚀装置 |
JP5954776B2 (ja) * | 2012-05-30 | 2016-07-20 | 株式会社Screenホールディングス | 基板処理装置 |
US9875916B2 (en) | 2012-07-09 | 2018-01-23 | Tokyo Electron Limited | Method of stripping photoresist on a single substrate system |
JP6232212B2 (ja) * | 2012-08-09 | 2017-11-15 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置及び基板洗浄装置 |
US10249509B2 (en) | 2012-11-09 | 2019-04-02 | Tokyo Electron Limited | Substrate cleaning method and system using atmospheric pressure atomic oxygen |
US20140137894A1 (en) * | 2012-11-21 | 2014-05-22 | Dynaloy, Llc | Process for removing substances from substrates |
US9735026B2 (en) | 2012-11-27 | 2017-08-15 | Tokyo Electron Limited | Controlling cleaning of a layer on a substrate using nozzles |
JP6629596B2 (ja) | 2013-01-11 | 2020-01-15 | エフ・イ−・アイ・カンパニー | エッチング速度を変化させるためのイオン注入 |
CN103295940B (zh) * | 2013-06-04 | 2016-12-28 | 中国电子科技集团公司第四十五研究所 | 一种金属膜剥离清洗设备的自动补液系统 |
US10464107B2 (en) | 2013-10-24 | 2019-11-05 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
JP6276979B2 (ja) * | 2013-12-04 | 2018-02-07 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6438649B2 (ja) * | 2013-12-10 | 2018-12-19 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6600470B2 (ja) | 2014-04-01 | 2019-10-30 | 株式会社荏原製作所 | 洗浄装置及び洗浄方法 |
CN104971916B (zh) * | 2014-04-01 | 2020-07-07 | 株式会社荏原制作所 | 清洗装置及清洗方法 |
US20170278879A1 (en) * | 2014-09-03 | 2017-09-28 | Sharp Kabushiki Kaisha | Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device |
CN105093594B (zh) * | 2015-09-18 | 2018-09-18 | 京东方科技集团股份有限公司 | 一种剥离装置和显示基板生产线 |
US10388537B2 (en) * | 2016-04-15 | 2019-08-20 | Samsung Electronics Co., Ltd. | Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same |
CN107305854B (zh) * | 2016-04-22 | 2021-05-14 | 盛美半导体设备(上海)股份有限公司 | 一种集成电路基板清洗设备 |
KR20170128801A (ko) | 2016-05-16 | 2017-11-24 | 삼성전자주식회사 | 기판 세정 방법 및 이를 수행하기 위한 장치 |
JP6917807B2 (ja) * | 2017-07-03 | 2021-08-11 | 東京エレクトロン株式会社 | 基板処理方法 |
JP2024106118A (ja) * | 2023-01-26 | 2024-08-07 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
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- 2004-11-23 TW TW093135964A patent/TWI270921B/zh not_active IP Right Cessation
- 2004-11-24 US US10/995,823 patent/US20050158671A1/en not_active Abandoned
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CN1267904A (zh) * | 1999-03-15 | 2000-09-27 | 日本电气株式会社 | 蚀刻和清洗方法及所用的蚀刻和清洗设备 |
JP2002075834A (ja) * | 2000-08-29 | 2002-03-15 | Sharp Corp | 半導体製造工程における現像方法 |
JP2002164313A (ja) * | 2000-11-24 | 2002-06-07 | Matsushita Electric Ind Co Ltd | 基板洗浄方法及び電子デバイスの製造方法 |
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US20050158671A1 (en) | 2005-07-21 |
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