CN1622281A - 半导体器件的制造方法及用于剥离抗蚀剂的清洗装置 - Google Patents
半导体器件的制造方法及用于剥离抗蚀剂的清洗装置 Download PDFInfo
- Publication number
- CN1622281A CN1622281A CN200410096239.XA CN200410096239A CN1622281A CN 1622281 A CN1622281 A CN 1622281A CN 200410096239 A CN200410096239 A CN 200410096239A CN 1622281 A CN1622281 A CN 1622281A
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- Prior art keywords
- resist
- semiconductor substrate
- semiconductor device
- manufacture method
- liquid
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
Abstract
Description
Claims (25)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003394249 | 2003-11-25 | ||
JP2003394249 | 2003-11-25 | ||
JP2004324601A JP2005183937A (ja) | 2003-11-25 | 2004-11-09 | 半導体装置の製造方法およびレジスト除去用洗浄装置 |
JP2004324601 | 2004-11-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1622281A true CN1622281A (zh) | 2005-06-01 |
CN100353488C CN100353488C (zh) | 2007-12-05 |
Family
ID=34752037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410096239XA Expired - Fee Related CN100353488C (zh) | 2003-11-25 | 2004-11-25 | 半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050158671A1 (zh) |
JP (1) | JP2005183937A (zh) |
CN (1) | CN100353488C (zh) |
TW (1) | TWI270921B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101794089A (zh) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | 电子束胶光掩模板的去胶方法及其装置 |
CN102725440A (zh) * | 2010-03-03 | 2012-10-10 | 应用材料公司 | 光致抗蚀剂移除处理装置及方法 |
CN102047394B (zh) * | 2008-06-02 | 2013-01-30 | 三菱瓦斯化学株式会社 | 半导体元件的洗涤方法 |
CN103426748A (zh) * | 2012-05-14 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 光刻胶层去除方法及刻蚀装置 |
CN102540761B (zh) * | 2005-06-30 | 2014-09-03 | 台湾积体电路制造股份有限公司 | 浸润式光刻的方法及其处理系统 |
CN105008891A (zh) * | 2013-01-11 | 2015-10-28 | Fei公司 | 用于变更蚀刻速率的离子注入 |
CN107305854A (zh) * | 2016-04-22 | 2017-10-31 | 盛美半导体设备(上海)有限公司 | 一种集成电路基板清洗设备 |
CN111589752A (zh) * | 2014-04-01 | 2020-08-28 | 株式会社荏原制作所 | 清洗装置 |
US11837477B2 (en) | 2014-04-01 | 2023-12-05 | Ebara Corporation | Washing device and washing method |
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US20050124160A1 (en) * | 2003-12-05 | 2005-06-09 | Taiwan Semiconductor Manufacturing Co. | Novel multi-gate formation procedure for gate oxide quality improvement |
JP4672487B2 (ja) * | 2005-08-26 | 2011-04-20 | 大日本スクリーン製造株式会社 | レジスト除去方法およびレジスト除去装置 |
JP4799084B2 (ja) * | 2005-09-01 | 2011-10-19 | ソニー株式会社 | レジスト剥離方法およびレジスト剥離装置 |
JP4840020B2 (ja) * | 2005-10-14 | 2011-12-21 | ソニー株式会社 | 基板の処理方法 |
JP4986566B2 (ja) * | 2005-10-14 | 2012-07-25 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4787086B2 (ja) * | 2006-06-23 | 2011-10-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP4787089B2 (ja) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2008028268A (ja) * | 2006-07-24 | 2008-02-07 | Nomura Micro Sci Co Ltd | 基板の乾燥方法 |
JP4863897B2 (ja) * | 2007-01-31 | 2012-01-25 | 東京エレクトロン株式会社 | 基板洗浄装置、基板洗浄方法及び基板洗浄プログラム |
JP5148889B2 (ja) | 2007-02-09 | 2013-02-20 | 株式会社東芝 | 洗浄方法及び電子デバイスの製造方法 |
US8741071B2 (en) * | 2008-01-09 | 2014-06-03 | Freescale Semiconductor, Inc. | Semiconductor processing method |
US8652266B2 (en) * | 2008-07-24 | 2014-02-18 | Lam Research Corporation | Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications |
JP2010205782A (ja) * | 2009-02-27 | 2010-09-16 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP2012146690A (ja) * | 2009-03-31 | 2012-08-02 | Kurita Water Ind Ltd | 電子材料洗浄方法及び電子材料洗浄装置 |
US8845812B2 (en) * | 2009-06-12 | 2014-09-30 | Micron Technology, Inc. | Method for contamination removal using magnetic particles |
CN103765561B (zh) * | 2011-07-11 | 2017-02-15 | 栗田工业株式会社 | 金属栅极半导体的清洗方法 |
KR102005485B1 (ko) | 2011-11-04 | 2019-07-31 | 삼성디스플레이 주식회사 | 표시 패널 |
JP5661598B2 (ja) * | 2011-11-22 | 2015-01-28 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US8940103B2 (en) * | 2012-03-06 | 2015-01-27 | Tokyo Electron Limited | Sequential stage mixing for single substrate strip processing |
JP5954776B2 (ja) * | 2012-05-30 | 2016-07-20 | 株式会社Screenホールディングス | 基板処理装置 |
US9875916B2 (en) | 2012-07-09 | 2018-01-23 | Tokyo Electron Limited | Method of stripping photoresist on a single substrate system |
JP6232212B2 (ja) * | 2012-08-09 | 2017-11-15 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置及び基板洗浄装置 |
US10249509B2 (en) | 2012-11-09 | 2019-04-02 | Tokyo Electron Limited | Substrate cleaning method and system using atmospheric pressure atomic oxygen |
US20140137894A1 (en) * | 2012-11-21 | 2014-05-22 | Dynaloy, Llc | Process for removing substances from substrates |
TWI526257B (zh) | 2012-11-27 | 2016-03-21 | 東京威力科創股份有限公司 | 使用噴嘴清洗基板上之一層的控制 |
CN103295940B (zh) * | 2013-06-04 | 2016-12-28 | 中国电子科技集团公司第四十五研究所 | 一种金属膜剥离清洗设备的自动补液系统 |
JP6276979B2 (ja) * | 2013-12-04 | 2018-02-07 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US10464107B2 (en) | 2013-10-24 | 2019-11-05 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
JP6438649B2 (ja) * | 2013-12-10 | 2018-12-19 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
US20170278879A1 (en) * | 2014-09-03 | 2017-09-28 | Sharp Kabushiki Kaisha | Method for manufacturing metal lamination film, method for manufacturing semiconductor device, and method for manufacturing liquid crystal display device |
CN105093594B (zh) * | 2015-09-18 | 2018-09-18 | 京东方科技集团股份有限公司 | 一种剥离装置和显示基板生产线 |
US10388537B2 (en) * | 2016-04-15 | 2019-08-20 | Samsung Electronics Co., Ltd. | Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same |
KR20170128801A (ko) | 2016-05-16 | 2017-11-24 | 삼성전자주식회사 | 기판 세정 방법 및 이를 수행하기 위한 장치 |
JP6917807B2 (ja) * | 2017-07-03 | 2021-08-11 | 東京エレクトロン株式会社 | 基板処理方法 |
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JP2576516B2 (ja) * | 1987-07-09 | 1997-01-29 | 三菱瓦斯化学株式会社 | レジスト除去液 |
JPH024269A (ja) * | 1988-06-22 | 1990-01-09 | Hitachi Ltd | ホトレジストの除去方法 |
US6350425B2 (en) * | 1994-01-07 | 2002-02-26 | Air Liquide America Corporation | On-site generation of ultra-high-purity buffered-HF and ammonium fluoride |
JPH09288358A (ja) * | 1996-04-22 | 1997-11-04 | Hitachi Ltd | 導体回路の形成方法 |
KR100219417B1 (ko) * | 1996-08-09 | 1999-09-01 | 윤종용 | 반도체 제조공정의 황산 보일 스테이션 |
JP3120425B2 (ja) * | 1998-05-25 | 2000-12-25 | 旭サナック株式会社 | レジスト剥離方法及び装置 |
JP3395696B2 (ja) * | 1999-03-15 | 2003-04-14 | 日本電気株式会社 | ウェハ処理装置およびウェハ処理方法 |
JP2001015475A (ja) * | 1999-06-28 | 2001-01-19 | Seiko Epson Corp | 洗浄装置及び洗浄方法 |
JP2001129495A (ja) * | 1999-08-25 | 2001-05-15 | Shibaura Mechatronics Corp | 基板の処理方法及びその装置 |
JP2001228635A (ja) * | 2000-02-16 | 2001-08-24 | Sumitomo Chem Co Ltd | 電子部品用処理液の製造装置及び製造方法 |
JP3891389B2 (ja) * | 2000-05-29 | 2007-03-14 | 東京エレクトロン株式会社 | 液処理方法及び液処理装置 |
JP2002075834A (ja) * | 2000-08-29 | 2002-03-15 | Sharp Corp | 半導体製造工程における現像方法 |
JP2002164313A (ja) * | 2000-11-24 | 2002-06-07 | Matsushita Electric Ind Co Ltd | 基板洗浄方法及び電子デバイスの製造方法 |
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JP2002305173A (ja) * | 2001-02-01 | 2002-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2002305177A (ja) * | 2001-02-01 | 2002-10-18 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6627360B1 (en) * | 2001-07-09 | 2003-09-30 | Advanced Micro Devices, Inc. | Carbonization process for an etch mask |
JP4678665B2 (ja) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP4202642B2 (ja) * | 2001-12-26 | 2008-12-24 | 花王株式会社 | 剥離剤組成物 |
JP4138323B2 (ja) * | 2002-01-30 | 2008-08-27 | 花王株式会社 | 剥離剤組成物 |
US7074726B2 (en) * | 2002-01-31 | 2006-07-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and substrate treating apparatus |
JP2003330205A (ja) * | 2002-05-17 | 2003-11-19 | Mitsubishi Gas Chem Co Inc | レジスト剥離液 |
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US7144673B2 (en) * | 2004-10-21 | 2006-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Effective photoresist stripping process for high dosage and high energy ion implantation |
-
2004
- 2004-11-09 JP JP2004324601A patent/JP2005183937A/ja active Pending
- 2004-11-23 TW TW093135964A patent/TWI270921B/zh not_active IP Right Cessation
- 2004-11-24 US US10/995,823 patent/US20050158671A1/en not_active Abandoned
- 2004-11-25 CN CNB200410096239XA patent/CN100353488C/zh not_active Expired - Fee Related
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102540761B (zh) * | 2005-06-30 | 2014-09-03 | 台湾积体电路制造股份有限公司 | 浸润式光刻的方法及其处理系统 |
CN102047394B (zh) * | 2008-06-02 | 2013-01-30 | 三菱瓦斯化学株式会社 | 半导体元件的洗涤方法 |
CN102725440A (zh) * | 2010-03-03 | 2012-10-10 | 应用材料公司 | 光致抗蚀剂移除处理装置及方法 |
CN101794089A (zh) * | 2010-04-12 | 2010-08-04 | 常州瑞择微电子科技有限公司 | 电子束胶光掩模板的去胶方法及其装置 |
CN101794089B (zh) * | 2010-04-12 | 2012-06-13 | 常州瑞择微电子科技有限公司 | 电子束胶光掩模板的去胶方法及其装置 |
CN103426748A (zh) * | 2012-05-14 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | 光刻胶层去除方法及刻蚀装置 |
CN105008891A (zh) * | 2013-01-11 | 2015-10-28 | Fei公司 | 用于变更蚀刻速率的离子注入 |
CN105008891B (zh) * | 2013-01-11 | 2018-02-06 | Fei公司 | 用于变更蚀刻速率的离子注入 |
US10325754B2 (en) | 2013-01-11 | 2019-06-18 | Fei Company | Ion implantation to alter etch rate |
CN111589752A (zh) * | 2014-04-01 | 2020-08-28 | 株式会社荏原制作所 | 清洗装置 |
US11837477B2 (en) | 2014-04-01 | 2023-12-05 | Ebara Corporation | Washing device and washing method |
CN107305854A (zh) * | 2016-04-22 | 2017-10-31 | 盛美半导体设备(上海)有限公司 | 一种集成电路基板清洗设备 |
CN107305854B (zh) * | 2016-04-22 | 2021-05-14 | 盛美半导体设备(上海)股份有限公司 | 一种集成电路基板清洗设备 |
Also Published As
Publication number | Publication date |
---|---|
CN100353488C (zh) | 2007-12-05 |
TWI270921B (en) | 2007-01-11 |
TW200525587A (en) | 2005-08-01 |
JP2005183937A (ja) | 2005-07-07 |
US20050158671A1 (en) | 2005-07-21 |
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Granted publication date: 20071205 Termination date: 20191125 |