BR112013026132A8 - Produto em camadas para a formação de padrão fino, métodos de fabricação do mesmo, de fabricação de uma estrutura de padrão fino, dispositivo semicondutor emissor de luz, e padrão fino - Google Patents
Produto em camadas para a formação de padrão fino, métodos de fabricação do mesmo, de fabricação de uma estrutura de padrão fino, dispositivo semicondutor emissor de luz, e padrão finoInfo
- Publication number
- BR112013026132A8 BR112013026132A8 BR112013026132A BR112013026132A BR112013026132A8 BR 112013026132 A8 BR112013026132 A8 BR 112013026132A8 BR 112013026132 A BR112013026132 A BR 112013026132A BR 112013026132 A BR112013026132 A BR 112013026132A BR 112013026132 A8 BR112013026132 A8 BR 112013026132A8
- Authority
- BR
- Brazil
- Prior art keywords
- fine pattern
- manufacturing
- forming
- product
- methods
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/40—Plastics, e.g. foam or rubber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
- B29C33/565—Consisting of shell-like structures supported by backing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Laminated Bodies (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Led Devices (AREA)
Abstract
PRODUTO EM CAMADAS PARA A FORMAÇÃO DE PADRÃO FINO, MÉTODOS DE FABRICAÇÃO DO MESMO, DE FABRICAÇÃO DE UMA ESTRUTURA DE PADRÃO FINO, DISPOSITIVO SEMICONDUTOR EMISSOR DE LUZ, E PADRÃO FINO Descreve?se um produto em camadas para a formação de padrão fino e um método de fabricação do produto em camadas para a formação de padrão fino, capaz de formar facilmente um padrão fino tendo uma película fina ou nenhuma película residual a fim de formar um padrão fino tendo uma razão de aspecto elevada sobre um objeto de processamento. O produto em camadas para a formação de padrão fino (1) da presente invenção usado para formar um padrão fino (220) em um objeto de processamento (200) usando uma primeira camada de máscara (103) inclui: um molde (101) tendo uma estrutura côncava-convexa (101a) sobre uma superfície; e uma segunda camada de máscara (102) provida sobre a estrutura côncava-convexa (101a), em que na segunda camada de máscara (102), a distância (lcc) e uma altura (h) da estrutura côncava-convexa (101a) satisfazem à Fórmula (1) 0 < lcc < 1,0h, e uma distância (lcv) e uma altura (h) satisfazem à Fórmula (2) 0 (Menor igual) Icv (Menor igual) 0,05h.
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011139692 | 2011-06-23 | ||
JP2011185505 | 2011-08-29 | ||
JP2011185504 | 2011-08-29 | ||
JP2011286453 | 2011-12-27 | ||
JP2011285597 | 2011-12-27 | ||
JP2012013466 | 2012-01-25 | ||
JP2012022267 | 2012-02-03 | ||
JP2012037957 | 2012-02-23 | ||
JP2012038273 | 2012-02-24 | ||
PCT/JP2012/065494 WO2012176728A1 (ja) | 2011-06-23 | 2012-06-18 | 微細パタン形成用積層体及び微細パタン形成用積層体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112013026132A2 BR112013026132A2 (pt) | 2016-12-27 |
BR112013026132A8 true BR112013026132A8 (pt) | 2017-12-05 |
Family
ID=47422565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112013026132A BR112013026132A8 (pt) | 2011-06-23 | 2012-06-18 | Produto em camadas para a formação de padrão fino, métodos de fabricação do mesmo, de fabricação de uma estrutura de padrão fino, dispositivo semicondutor emissor de luz, e padrão fino |
Country Status (9)
Country | Link |
---|---|
US (1) | US9263649B2 (pt) |
EP (1) | EP2690650B1 (pt) |
JP (1) | JP5243672B1 (pt) |
KR (1) | KR101326614B1 (pt) |
CN (3) | CN104210047B (pt) |
BR (1) | BR112013026132A8 (pt) |
MY (1) | MY168317A (pt) |
TW (1) | TWI436405B (pt) |
WO (1) | WO2012176728A1 (pt) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8128393B2 (en) * | 2006-12-04 | 2012-03-06 | Liquidia Technologies, Inc. | Methods and materials for fabricating laminate nanomolds and nanoparticles therefrom |
NL2005263A (en) * | 2009-09-29 | 2011-03-30 | Asml Netherlands Bv | Imprint lithography. |
WO2013008556A1 (ja) | 2011-07-12 | 2013-01-17 | 丸文株式会社 | 発光素子及びその製造方法 |
EP2866091A1 (en) * | 2011-08-31 | 2015-04-29 | Asahi Kasei E-materials Corporation | Nano-imprint mold |
EP2784587B1 (en) * | 2011-11-22 | 2019-08-07 | Asahi Kasei Kabushiki Kaisha | Method for producing mold, developing method and pattern-forming material |
JP6179900B2 (ja) * | 2012-03-30 | 2017-08-16 | パナソニックIpマネジメント株式会社 | 太陽電池及びその製造方法 |
KR101233062B1 (ko) * | 2012-04-18 | 2013-02-19 | (주)휴넷플러스 | 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 |
EP2889922B1 (en) * | 2012-08-21 | 2018-03-07 | Oji Holdings Corporation | Method for producing substrate for semiconductor light emitting element and method for manufacturing semiconductor light emitting element |
KR20140076357A (ko) * | 2012-12-12 | 2014-06-20 | 삼성전자주식회사 | 고대비 정렬 마크를 가진 나노임프린트 스탬프 및 그 제조방법 |
JP6132545B2 (ja) * | 2012-12-21 | 2017-05-24 | 旭化成株式会社 | 微細パタン形成用積層体 |
JP6010481B2 (ja) * | 2013-02-27 | 2016-10-19 | 旭化成株式会社 | フィルム状モールドの製造方法 |
JP2015012128A (ja) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | 撮像装置及び電子機器 |
US9929311B2 (en) | 2013-07-17 | 2018-03-27 | Marubun Corporation | Semiconductor light emitting element and method for producing the same |
WO2015025631A1 (ja) * | 2013-08-21 | 2015-02-26 | シャープ株式会社 | 窒化物半導体発光素子 |
US9152036B2 (en) * | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
JP6193715B2 (ja) * | 2013-10-08 | 2017-09-06 | キヤノン株式会社 | 液体吐出ヘッド |
US10193120B2 (en) | 2013-11-04 | 2019-01-29 | Lg Chem, Ltd. | Method for forming adhesion layer for secondary battery |
CN103576447A (zh) * | 2013-11-05 | 2014-02-12 | 无锡英普林纳米科技有限公司 | 一种含氟聚合物紫外纳米压印模板及其制备方法 |
KR102142522B1 (ko) * | 2013-11-11 | 2020-08-07 | 삼성전기주식회사 | 드라이 필름 레지스트 |
JP6307257B2 (ja) * | 2013-12-11 | 2018-04-04 | 旭化成株式会社 | 機能転写体及び機能層の転写方法 |
JP6301672B2 (ja) * | 2014-02-12 | 2018-03-28 | 旭化成株式会社 | 反転構造体の製造方法及びこれを用いた凹凸構造付基板 |
CN105934833B (zh) * | 2014-03-06 | 2017-09-15 | 丸文株式会社 | 深紫外led及其制造方法 |
US9775239B2 (en) * | 2014-04-08 | 2017-09-26 | Panasonic Intellectual Property Management Co., Ltd. | Resin composition for printed wiring board, prepreg, metal-clad laminate, and printed wiring board |
KR101602366B1 (ko) * | 2014-05-20 | 2016-03-11 | (주) 파루 | 블레이딩 공정을 이용한 투명전극필름 제조방법 |
US9929317B2 (en) | 2015-01-16 | 2018-03-27 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
EP3261796A4 (en) * | 2015-02-23 | 2018-12-19 | Electro Scientific Industries, Inc. | Laser systems and methods for large area modification |
CN104966789A (zh) * | 2015-06-30 | 2015-10-07 | 深圳市华星光电技术有限公司 | 一种电荷连接层及其制造方法、叠层oled器件 |
CN105044941B (zh) * | 2015-08-03 | 2018-01-12 | 深圳市华星光电技术有限公司 | 光刻图形的尺寸检测方法 |
EP3346509B1 (en) | 2015-09-03 | 2021-06-30 | Marubun Corporation | Deep-ultraviolet led and method for manufacturing same |
US10156786B2 (en) * | 2015-09-30 | 2018-12-18 | Thomas E. Seidel | Method and structure for nanoimprint lithography masks using optical film coatings |
SG11201804077PA (en) * | 2015-11-16 | 2018-06-28 | Mitsui Chemicals Inc | Semiconductor film composition, method of manufacturing semiconductor film composition, method of manufacturing semiconductor member, method of manufacturing semiconductor processing material, and semiconductor device |
US20180329292A1 (en) * | 2015-11-20 | 2018-11-15 | Asml Netherlands B.V. | Lithographic Apparatus and Method of Operating a Lithographic Apparatus |
CN108349120B (zh) * | 2015-11-22 | 2020-06-23 | 奥博泰克有限公司 | 打印的三维结构的表面性质控制 |
JP6585521B2 (ja) * | 2016-02-16 | 2019-10-02 | 東芝メモリ株式会社 | テンプレート、インプリント方法およびインプリント装置 |
WO2017154924A1 (ja) * | 2016-03-08 | 2017-09-14 | 日産化学工業株式会社 | Iii族窒化物系化合物層を有する半導体基板の製造方法 |
WO2017168811A1 (ja) | 2016-03-30 | 2017-10-05 | 丸文株式会社 | 深紫外led及びその製造方法 |
US11957897B2 (en) | 2016-04-22 | 2024-04-16 | Newton Howard | Biological co-processor (BCP) |
US20200405204A1 (en) * | 2016-04-22 | 2020-12-31 | Newton Howard | Detection of catecholamine levels inside the neurocranium |
KR20190008888A (ko) * | 2016-05-18 | 2019-01-25 | 소켄 케미칼 앤드 엔지니어링 캄파니, 리미티드 | 광경화성 수지 조성물, 그 수지층 및 임프린트용 몰드 |
JP6779719B2 (ja) * | 2016-09-06 | 2020-11-04 | 太陽インキ製造株式会社 | ファンアウト型のウエハレベルパッケージ用反り矯正材 |
JP2018046209A (ja) * | 2016-09-15 | 2018-03-22 | 株式会社ディスコ | インプリント用原版の製造方法及びウエーハの分割方法 |
JP6875811B2 (ja) * | 2016-09-16 | 2021-05-26 | 株式会社Screenホールディングス | パターン倒壊回復方法、基板処理方法および基板処理装置 |
CN107993490B (zh) * | 2016-10-26 | 2020-09-04 | 壹嘉壹株式会社 | 数学运算设备、教具、平台及提供其的方法 |
US9768034B1 (en) * | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
NL2019979A (en) | 2016-12-22 | 2018-06-28 | Asml Netherlands Bv | An Object in a Lithographic Apparatus |
JP6699903B2 (ja) | 2017-01-27 | 2020-05-27 | 株式会社東芝 | パターン形成方法、半導体装置及びその製造方法 |
US11112704B2 (en) * | 2017-02-10 | 2021-09-07 | Kla-Tencor Corporation | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
US10211363B2 (en) * | 2017-02-21 | 2019-02-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Transfer printing template and transfer printing device of micro light-emitting diode |
JP6712673B2 (ja) | 2017-02-28 | 2020-06-24 | 富士フイルム株式会社 | インプリント用密着膜形成用組成物、密着膜、積層体、硬化物パターンの製造方法および回路基板の製造方法 |
TWI641165B (zh) * | 2017-03-27 | 2018-11-11 | 固美實國際股份有限公司 | 用於發光二極體的圖案化基板 |
US10619261B2 (en) * | 2017-03-27 | 2020-04-14 | Ulvac, Inc. | Manufacturing method for electronic component |
CN110785277A (zh) * | 2017-03-31 | 2020-02-11 | 帝斯克玛股份有限公司 | 模制具有表面标记的容器的方法和容器 |
WO2018208229A1 (en) * | 2017-05-09 | 2018-11-15 | Heptagon Micro Optics Pte. Ltd. | Method for conditioning a replication tool and related method for manufacturing a multitude of devices |
US10211072B2 (en) * | 2017-06-23 | 2019-02-19 | Applied Materials, Inc. | Method of reconstituted substrate formation for advanced packaging applications |
TWI646389B (zh) * | 2017-09-12 | 2019-01-01 | 友達光電股份有限公司 | 壓印模具以及壓印模具製造方法 |
JP6938651B2 (ja) | 2017-09-15 | 2021-09-22 | 旭化成株式会社 | 金属粒子環状構造体、絶縁材被覆金属粒子環状構造体、及び組成物 |
CN108038605B (zh) * | 2017-12-05 | 2021-12-17 | 深圳市智物联网络有限公司 | 一种智慧工厂的plard方法及plard系统 |
US11276572B2 (en) * | 2017-12-08 | 2022-03-15 | Tokyo Electron Limited | Technique for multi-patterning substrates |
US10935832B2 (en) * | 2018-01-08 | 2021-03-02 | Au Optronics Corporation | Optical film and display device having the same |
US11309454B2 (en) | 2018-01-26 | 2022-04-19 | Marubun Corporation | Deep ultraviolet LED and method for producing the same |
EP3546903A3 (en) * | 2018-03-09 | 2020-01-15 | Samsung Electronics Co., Ltd. | Light filter and spectrometer including the same |
SG11202009505XA (en) * | 2018-03-27 | 2020-10-29 | Tokyo Ohka Kogyo Co Ltd | Method for manufacturing plated molded article |
KR102045143B1 (ko) * | 2018-03-28 | 2019-11-14 | 황장환 | 광학 패턴 부재 및 이의 제조 방법 |
USD854780S1 (en) | 2018-04-30 | 2019-07-30 | The J. M. Smucker Company | Sandwich |
JP2021167849A (ja) * | 2018-07-19 | 2021-10-21 | コニカミノルタ株式会社 | 金属マスクの製造方法と金属マスク、及び高アスペクト回折格子の製造方法と高アスペクト回折格子 |
KR101962778B1 (ko) * | 2018-09-05 | 2019-07-31 | 주식회사 태진중공업 | 초저온 열교환기 튜브의 초발수 코팅방법과 그 방법에 의해 제조된 초저온 열교환기 튜브 및 이에 사용되는 초발수 코팅용 코팅제 조성물 |
WO2020112740A1 (en) * | 2018-11-29 | 2020-06-04 | Sharklet Technologies, Inc. | Soluble templates and methods of manufacture thereof |
FI128257B (en) | 2018-12-14 | 2020-01-31 | Teknologian Tutkimuskeskus Vtt Oy | Procedure for roll to roll printing of components |
TWI695029B (zh) * | 2019-02-15 | 2020-06-01 | 國立臺灣科技大學 | 圖案化金屬層及其製造方法 |
JP7163221B2 (ja) | 2019-03-11 | 2022-10-31 | キオクシア株式会社 | 高分子材料、組成物および半導体装置の製造方法 |
CN110061079A (zh) * | 2019-05-22 | 2019-07-26 | 深圳市欧椰华新能源有限公司 | 一种太阳能电池板的表面封装膜及其制作方法 |
CN111139430B (zh) * | 2020-01-17 | 2020-12-11 | 兰州理工大学 | 一种织构化类金刚石碳基薄膜及其制备方法 |
CN113307223A (zh) * | 2021-04-20 | 2021-08-27 | 杭州欧光芯科技有限公司 | 一种纳米孔局部亲疏水性修饰的方法 |
CN115043596A (zh) * | 2022-05-30 | 2022-09-13 | 维达力实业(深圳)有限公司 | 防眩光基材的制备方法、防眩光基材及显示器件 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001126322A (ja) * | 1999-10-22 | 2001-05-11 | Nec Corp | 情報記録媒体用基板の製造方法 |
JP2002367242A (ja) * | 2001-06-04 | 2002-12-20 | Sony Corp | 光記録媒体作製用スタンパーとその製造方法 |
US7122095B2 (en) * | 2003-03-14 | 2006-10-17 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Methods for forming an assembly for transfer of a useful layer |
FR2852445B1 (fr) * | 2003-03-14 | 2005-05-20 | Soitec Silicon On Insulator | Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique |
JP4317375B2 (ja) * | 2003-03-20 | 2009-08-19 | 株式会社日立製作所 | ナノプリント装置、及び微細構造転写方法 |
JP4340086B2 (ja) * | 2003-03-20 | 2009-10-07 | 株式会社日立製作所 | ナノプリント用スタンパ、及び微細構造転写方法 |
JP4229857B2 (ja) * | 2004-02-26 | 2009-02-25 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
CN100462800C (zh) * | 2004-07-16 | 2009-02-18 | 住友化学株式会社 | 防眩偏光膜积层体以及使用此积层体的液晶显示装置 |
JP4266911B2 (ja) * | 2004-10-18 | 2009-05-27 | パナソニック株式会社 | 光ディスクの製造方法 |
JP2006164365A (ja) * | 2004-12-06 | 2006-06-22 | Tdk Corp | 樹脂マスク層形成方法、情報記録媒体製造方法および樹脂マスク層形成装置 |
JP4848745B2 (ja) * | 2005-11-25 | 2011-12-28 | 豊和工業株式会社 | シート積層体の製造方法、およびシート積層体の製造装置 |
JP4862033B2 (ja) * | 2007-12-19 | 2012-01-25 | 旭化成株式会社 | 光吸収性を有するモールド、該モールドを利用する感光性樹脂のパターン形成方法、及び印刷版の製造方法 |
JP4892025B2 (ja) * | 2008-09-26 | 2012-03-07 | 株式会社東芝 | インプリント方法 |
JP5388539B2 (ja) * | 2008-10-28 | 2014-01-15 | 旭化成イーマテリアルズ株式会社 | パターン形成方法 |
JP5594147B2 (ja) * | 2008-12-05 | 2014-09-24 | 旭硝子株式会社 | 光硬化性組成物および表面に微細パターンを有する成形体の製造方法 |
KR101029299B1 (ko) * | 2008-12-30 | 2011-04-18 | 서울대학교산학협력단 | 유기 발광 소자 및 그 제조 방법 |
JP2010245130A (ja) * | 2009-04-01 | 2010-10-28 | Jsr Corp | スタンパ及びこれを用いた光インプリントリソグラフィ方法 |
JP2011066273A (ja) | 2009-09-18 | 2011-03-31 | Konica Minolta Holdings Inc | 微細マスクパターンの形成方法、ナノインプリントリソグラフィ方法および微細構造体の製造方法 |
JP5620827B2 (ja) * | 2011-01-06 | 2014-11-05 | 富士フイルム株式会社 | ナノインプリントモールドの洗浄方法 |
JP5678728B2 (ja) * | 2011-03-03 | 2015-03-04 | 大日本印刷株式会社 | モールドおよびその製造方法 |
JP5854795B2 (ja) * | 2011-11-28 | 2016-02-09 | キヤノン株式会社 | パターン形成方法 |
IN2014MN02313A (pt) * | 2012-05-08 | 2015-08-07 | Asahi Kasei E Materials Corp |
-
2012
- 2012-06-18 TW TW101121830A patent/TWI436405B/zh not_active IP Right Cessation
- 2012-06-18 CN CN201410446851.9A patent/CN104210047B/zh not_active Expired - Fee Related
- 2012-06-18 KR KR1020137009345A patent/KR101326614B1/ko active IP Right Grant
- 2012-06-18 CN CN201280003345.1A patent/CN103299396B/zh not_active Expired - Fee Related
- 2012-06-18 BR BR112013026132A patent/BR112013026132A8/pt not_active Application Discontinuation
- 2012-06-18 CN CN201410446835.XA patent/CN104210046B/zh not_active Expired - Fee Related
- 2012-06-18 JP JP2013506372A patent/JP5243672B1/ja active Active
- 2012-06-18 MY MYPI2013003639A patent/MY168317A/en unknown
- 2012-06-18 US US14/004,305 patent/US9263649B2/en not_active Expired - Fee Related
- 2012-06-18 WO PCT/JP2012/065494 patent/WO2012176728A1/ja active Application Filing
- 2012-06-18 EP EP12803275.2A patent/EP2690650B1/en not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
EP2690650B1 (en) | 2017-08-09 |
EP2690650A1 (en) | 2014-01-29 |
BR112013026132A2 (pt) | 2016-12-27 |
US9263649B2 (en) | 2016-02-16 |
TWI436405B (zh) | 2014-05-01 |
TW201327631A (zh) | 2013-07-01 |
CN104210046A (zh) | 2014-12-17 |
CN103299396B (zh) | 2015-11-25 |
CN104210047A (zh) | 2014-12-17 |
EP2690650A4 (en) | 2016-07-13 |
JPWO2012176728A1 (ja) | 2015-02-23 |
MY168317A (en) | 2018-10-30 |
CN104210046B (zh) | 2017-05-10 |
CN103299396A (zh) | 2013-09-11 |
CN104210047B (zh) | 2016-09-28 |
JP5243672B1 (ja) | 2013-07-24 |
WO2012176728A1 (ja) | 2012-12-27 |
KR20130055015A (ko) | 2013-05-27 |
KR101326614B1 (ko) | 2013-11-08 |
US20140151733A1 (en) | 2014-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR112013026132A8 (pt) | Produto em camadas para a formação de padrão fino, métodos de fabricação do mesmo, de fabricação de uma estrutura de padrão fino, dispositivo semicondutor emissor de luz, e padrão fino | |
BR112017018720A2 (pt) | elemento ótico e método para a produção de um elemento ótico | |
CO7200257A2 (es) | Producto de papel tisú de múltiples capas y métodos para fabricar el mismo | |
TW201614362A (en) | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device | |
ES2524268T3 (es) | Material con persistencia luminosa de luz amarilla, procedimiento de fabricación del mismo y dispositivo de luminiscencia led que usa el mismo | |
WO2012027050A3 (en) | Mask for near-field lithography and fabrication the same | |
JP2013179270A5 (pt) | ||
BR112012027108A2 (pt) | recipiente de múltiplas camadas, molde para recipiente de múltiplas camadas, e método para a produção de recipiente de múltiplas camadas | |
AR085500A1 (es) | Metodos y aparato para una lente oftalmica con capas de inserto funcionales | |
WO2009034915A1 (ja) | 蒸着装置 | |
JP2013257593A5 (ja) | 転写用マスクの製造方法及び半導体装置の製造方法 | |
BR112013032527B8 (pt) | filme de barreira de polímero em multicamadas simultaneamente biaxialmente orientado, filme biaxialmente orientado revestido, material de acondicionamento laminado, recipiente de acondicionamento, e, método para fabricação de um filme de barreira de polímero em multicamadas biaxialmente orientado | |
FR3033939B1 (fr) | Dispositif optoelectronique a diode electroluminescente | |
WO2010035991A3 (en) | Apparatus and method for manufacturing light-emitting diode | |
ATE545182T1 (de) | Verfahren zur herstellung eines oberflächenemissionslasers | |
BR112015011002A2 (pt) | películas moldadas por sopro de camadas múltiplas melhoradas | |
MY173073A (en) | Mold release film and process for producing semiconductor package | |
BRPI0508654A (pt) | laminado de pelìcula de carbono e método para produção do mesmo e dispositivo de remoção de voc | |
Han et al. | Fabrication of 3D nano-structures using reverse imprint lithography | |
MY172242A (en) | Release film for producing green sheet, and method of manufacturing release film for producing green sheet | |
BR112012022460A2 (pt) | método para a produção de um elemento pelo menos parcialmente eletricamente condutor ou semicondutor em uma estrutura, elemento, uso do mesmo e uso de um único elemento. | |
US20120013042A1 (en) | Imprint template and pattern forming method | |
BR112013033407A2 (pt) | dispositivo de saída de iluminação e método para fabricar um dispositivo de saída de iluminação | |
RU2009149664A (ru) | Окрашенные контактные линзы, обладающие эффектом глубины | |
BR112015013526A2 (pt) | filme multicamada e artigo |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B25A | Requested transfer of rights approved |
Owner name: ASAHI KASEI E-MATERIALS CORPORATION (JP) |
|
B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |