JP4229857B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4229857B2 JP4229857B2 JP2004052047A JP2004052047A JP4229857B2 JP 4229857 B2 JP4229857 B2 JP 4229857B2 JP 2004052047 A JP2004052047 A JP 2004052047A JP 2004052047 A JP2004052047 A JP 2004052047A JP 4229857 B2 JP4229857 B2 JP 4229857B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- polarized light
- mask pattern
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
Description
図1は、本発明の実施の形態1に係る半導体装置を示した上面図である。
図8(a),(b)は、実施の形態2に係るフラッシュメモリ(半導体装置)における配線パターンを形成するためのマスクパターンを示した図である。
図10は、ウエハ上にホールパターンを形成するためのマスクパターンを示した上面図である。
図13は、実施の形態4に係る半導体装置の製造方法における、基板50上に形成されたレジストパターン51,52,51A,52Aを示した断面図である。また、図14は、該レジストパターンを示した上面図である。図13(a),(c)は、図14(a)中のA−A断面を示し、図13(b),(d)は、図14(b)中のB−B断面を示す。
Claims (1)
- ホールパターンを有する半導体装置の製造方法であって、
直線偏光光によってマスク上に形成されたマスクパターンをウエハ上に形成されたレジスト膜上に転写する工程と、
前記レジスト膜をパターニングする工程と、
パターニングされた前記レジスト膜を用いてパターンを形成する工程とを備え、
前記ホールパターンを形成するためのマスクパターンにおいて、前記直線偏光光の偏光方向に平行な第1方向の開口幅を該第1方向に直交する第2方向の開口幅よりも広く形成し、
前記マスクパターンにハーフトーン領域を設けた半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004052047A JP4229857B2 (ja) | 2004-02-26 | 2004-02-26 | 半導体装置の製造方法 |
CN2004800132128A CN1791836B (zh) | 2004-02-26 | 2004-12-22 | 半导体器件制造方法和掩模图案数据生成方法 |
US10/551,553 US7736839B2 (en) | 2004-02-26 | 2004-12-22 | Process for fabricating semiconductor device and method for generating mask pattern data |
EP04807522A EP1635217A4 (en) | 2004-02-26 | 2004-12-22 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GENERATING MASK PATTERN DATA |
KR1020067016910A KR20060129403A (ko) | 2004-02-26 | 2004-12-22 | 반도체장치의 제조방법 및 마스크 패턴 데이터 작성방법 |
PCT/JP2004/019165 WO2005083515A1 (ja) | 2004-02-26 | 2004-12-22 | 半導体装置の製造方法およびマスクパターンデータ作成方法 |
TW094100686A TW200529295A (en) | 2004-02-26 | 2005-01-11 | Method for manufacturing semiconductor device and method forming mask pattern data |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004052047A JP4229857B2 (ja) | 2004-02-26 | 2004-02-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005242004A JP2005242004A (ja) | 2005-09-08 |
JP4229857B2 true JP4229857B2 (ja) | 2009-02-25 |
Family
ID=34908655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004052047A Expired - Fee Related JP4229857B2 (ja) | 2004-02-26 | 2004-02-26 | 半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7736839B2 (ja) |
EP (1) | EP1635217A4 (ja) |
JP (1) | JP4229857B2 (ja) |
KR (1) | KR20060129403A (ja) |
CN (1) | CN1791836B (ja) |
TW (1) | TW200529295A (ja) |
WO (1) | WO2005083515A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1804119A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | Method for manufacturing attenuated phase- shift masks and devices obtained therefrom |
JP4597902B2 (ja) | 2006-04-06 | 2010-12-15 | Tdk株式会社 | レジストパターンの形成方法および垂直磁気記録ヘッドの製造方法 |
KR100809705B1 (ko) * | 2006-09-26 | 2008-03-06 | 삼성전자주식회사 | 반도체 소자의 패턴 예측을 위한 이미지 콘투어 형성방법 |
KR100817064B1 (ko) * | 2006-10-02 | 2008-03-27 | 삼성전자주식회사 | 미세패턴을 형성하기 위한 마스크 및 그 형성방법 |
CN101281364B (zh) * | 2007-04-03 | 2012-10-31 | 奇美电子股份有限公司 | 彩色滤光片的制作方法及液晶显示面板的制作方法 |
TWI434143B (zh) * | 2008-09-22 | 2014-04-11 | Nanya Technology Corp | 微影設備 |
CN103299396B (zh) * | 2011-06-23 | 2015-11-25 | 旭化成电子材料株式会社 | 微细图案形成用积层体及微细图案形成用积层体的制造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275493A (ja) | 1993-03-19 | 1994-09-30 | Fujitsu Ltd | 投影露光 |
US4864123A (en) * | 1987-05-08 | 1989-09-05 | Nikon Corporation | Apparatus for detecting the level of an object surface |
JPS6467914A (en) | 1987-09-09 | 1989-03-14 | Hitachi Ltd | Exposure device |
JP2881892B2 (ja) | 1990-01-16 | 1999-04-12 | 富士通株式会社 | 投影露光用マスク |
JPH0590128A (ja) | 1991-06-13 | 1993-04-09 | Nikon Corp | 露光装置 |
US5242770A (en) * | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
JP3322274B2 (ja) | 1992-10-29 | 2002-09-09 | 株式会社ニコン | 投影露光方法及び投影露光装置 |
KR0153796B1 (ko) * | 1993-09-24 | 1998-11-16 | 사토 후미오 | 노광장치 및 노광방법 |
JPH088177A (ja) * | 1994-04-22 | 1996-01-12 | Canon Inc | 投影露光装置及びそれを用いたデバイスの製造方法 |
JPH08203806A (ja) | 1995-01-25 | 1996-08-09 | Sony Corp | 露光照明装置 |
JPH09167735A (ja) * | 1995-12-15 | 1997-06-24 | Canon Inc | 投影露光装置及びそれを用いた半導体デバイスの製造方法 |
US6128067A (en) | 1998-04-28 | 2000-10-03 | Kabushiki Kaisha Toshiba | Correcting method and correcting system for mask pattern |
JP2000114246A (ja) * | 1998-08-07 | 2000-04-21 | Ulvac Seimaku Kk | ドライエッチング方法および装置、フォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法 |
JP2000138201A (ja) * | 1998-10-29 | 2000-05-16 | Ulvac Seimaku Kk | ハーフトーン位相シフト膜のドライエッチング方法および装置、ハーフトーン位相シフトフォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法 |
JP2000235251A (ja) * | 1999-02-16 | 2000-08-29 | Sony Corp | 露光パターンの補正方法、露光方法、露光装置、フォトマスクおよび半導体装置 |
JP4646367B2 (ja) * | 2000-08-25 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
TW479276B (en) * | 2001-05-08 | 2002-03-11 | Macronix Int Co Ltd | Method of optical proximity correction |
JP3731566B2 (ja) * | 2002-06-28 | 2006-01-05 | ソニー株式会社 | 露光方法、マスク製造方法および半導体装置の製造方法 |
JP4240966B2 (ja) * | 2002-09-06 | 2009-03-18 | キヤノン株式会社 | 近接場光マスク、これを用いた近接場露光装置、これを用いたドットパターン作製方法 |
-
2004
- 2004-02-26 JP JP2004052047A patent/JP4229857B2/ja not_active Expired - Fee Related
- 2004-12-22 EP EP04807522A patent/EP1635217A4/en not_active Withdrawn
- 2004-12-22 CN CN2004800132128A patent/CN1791836B/zh not_active Expired - Fee Related
- 2004-12-22 WO PCT/JP2004/019165 patent/WO2005083515A1/ja not_active Application Discontinuation
- 2004-12-22 KR KR1020067016910A patent/KR20060129403A/ko not_active Application Discontinuation
- 2004-12-22 US US10/551,553 patent/US7736839B2/en not_active Expired - Fee Related
-
2005
- 2005-01-11 TW TW094100686A patent/TW200529295A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2005242004A (ja) | 2005-09-08 |
US7736839B2 (en) | 2010-06-15 |
EP1635217A4 (en) | 2006-07-19 |
US20060183310A1 (en) | 2006-08-17 |
CN1791836A (zh) | 2006-06-21 |
TW200529295A (en) | 2005-09-01 |
CN1791836B (zh) | 2010-08-18 |
KR20060129403A (ko) | 2006-12-15 |
EP1635217A1 (en) | 2006-03-15 |
WO2005083515A1 (ja) | 2005-09-09 |
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