AU722096B2 - Wafer processing apparatus, wafer processing method, and Soi wafer fabrication method - Google Patents

Wafer processing apparatus, wafer processing method, and Soi wafer fabrication method Download PDF

Info

Publication number
AU722096B2
AU722096B2 AU52897/98A AU5289798A AU722096B2 AU 722096 B2 AU722096 B2 AU 722096B2 AU 52897/98 A AU52897/98 A AU 52897/98A AU 5289798 A AU5289798 A AU 5289798A AU 722096 B2 AU722096 B2 AU 722096B2
Authority
AU
Australia
Prior art keywords
wafer
processing
bath
wafers
ultrasonic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU52897/98A
Other languages
English (en)
Other versions
AU5289798A (en
Inventor
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of AU5289798A publication Critical patent/AU5289798A/en
Application granted granted Critical
Publication of AU722096B2 publication Critical patent/AU722096B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU52897/98A 1997-02-04 1998-02-03 Wafer processing apparatus, wafer processing method, and Soi wafer fabrication method Ceased AU722096B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9021796A JPH10223585A (ja) 1997-02-04 1997-02-04 ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
JP9-021796 1997-02-04

Publications (2)

Publication Number Publication Date
AU5289798A AU5289798A (en) 1998-08-06
AU722096B2 true AU722096B2 (en) 2000-07-20

Family

ID=12065023

Family Applications (1)

Application Number Title Priority Date Filing Date
AU52897/98A Ceased AU722096B2 (en) 1997-02-04 1998-02-03 Wafer processing apparatus, wafer processing method, and Soi wafer fabrication method

Country Status (11)

Country Link
US (1) US6337030B1 (enExample)
EP (1) EP0856873B1 (enExample)
JP (1) JPH10223585A (enExample)
KR (1) KR100416963B1 (enExample)
CN (1) CN1108632C (enExample)
AT (1) ATE280435T1 (enExample)
AU (1) AU722096B2 (enExample)
CA (1) CA2228571C (enExample)
DE (1) DE69827051T2 (enExample)
SG (1) SG73497A1 (enExample)
TW (1) TW473863B (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10223585A (ja) 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
US6767840B1 (en) * 1997-02-21 2004-07-27 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
US6520191B1 (en) 1998-10-19 2003-02-18 Memc Electronic Materials, Inc. Carrier for cleaning silicon wafers
JP2000124183A (ja) * 1998-10-19 2000-04-28 Memc Kk シリコンウェーハ洗浄用キャリア
US6412503B1 (en) * 1999-06-01 2002-07-02 Applied Materials, Inc. Magnetically coupled substrate roller
DE19934300C2 (de) * 1999-07-21 2002-02-07 Steag Micro Tech Gmbh Vorrichtung zum Behandeln von Substraten
EP1139396A3 (en) * 2000-03-31 2003-08-27 Texas Instruments Incorporated Fixture and method for uniform electroless metal deposition on integrated circuit bond pads
US20030181042A1 (en) * 2002-03-19 2003-09-25 Taiwan Semiconductor Manufacturing Co., Ltd. Etching uniformity in wet bench tools
US20030211427A1 (en) * 2002-05-07 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thick film photoresist stripping
KR100710160B1 (ko) * 2002-10-07 2007-04-20 엘지.필립스 엘시디 주식회사 유리기판 파손방지용 카세트
US7040330B2 (en) * 2003-02-20 2006-05-09 Lam Research Corporation Method and apparatus for megasonic cleaning of patterned substrates
JP4162524B2 (ja) * 2003-03-27 2008-10-08 大日本スクリーン製造株式会社 基板処理方法およびその装置
US20040238119A1 (en) * 2003-05-26 2004-12-02 Ching-Yu Chang [apparatus and method for etching silicon nitride thin film ]
JP4509501B2 (ja) * 2003-07-31 2010-07-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 円板状部材のエッチング方法及び装置
US7415985B2 (en) * 2003-09-24 2008-08-26 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning and drying apparatus
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US7612483B2 (en) * 2004-02-27 2009-11-03 Georgia Tech Research Corporation Harmonic cMUT devices and fabrication methods
WO2005091424A1 (ja) * 2004-03-18 2005-09-29 Matsushita Electric Industrial Co., Ltd. 電力システムおよびその管理方法
US20050211379A1 (en) * 2004-03-29 2005-09-29 Hung-Wen Su Apparatus and method for removing metal from wafer edge
KR100604051B1 (ko) * 2004-06-30 2006-07-24 동부일렉트로닉스 주식회사 게이트 산화막의 전세정방법
KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
US7730898B2 (en) 2005-03-01 2010-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer lifter
US7531426B2 (en) * 2005-08-19 2009-05-12 Honeywell International Inc. Approach to high temperature wafer processing
JP4705517B2 (ja) * 2006-05-19 2011-06-22 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体
KR100766417B1 (ko) 2006-07-11 2007-10-12 이기정 수납 부재 및 이를 포함하는 박판화 장치
DE202006020339U1 (de) * 2006-12-15 2008-04-10 Rena Sondermaschinen Gmbh Vorrichtung zum Reinigen von Gegenständen, insbesondere von dünnen Scheiben
US8327861B2 (en) 2006-12-19 2012-12-11 Lam Research Corporation Megasonic precision cleaning of semiconductor process equipment components and parts
KR101104016B1 (ko) * 2008-11-04 2012-01-06 주식회사 엘지실트론 웨이퍼 처리 장치 및 이에 사용되는 배럴과, 웨이퍼 처리 방법
CN101844111A (zh) * 2009-04-08 2010-09-29 佛山市兴民科技有限公司 一种超声浮选方法及其装置和用途
KR101009584B1 (ko) 2010-11-10 2011-01-20 주식회사 에이에스이 웨이퍼 세정장치
JP5696491B2 (ja) * 2011-01-20 2015-04-08 株式会社Sumco ウェーハ洗浄装置及び洗浄方法
JP2012178458A (ja) * 2011-02-25 2012-09-13 Fujitsu Ltd 半導体装置の製造方法及び半導体基板の洗浄方法
CN102787315B (zh) * 2011-05-19 2015-01-07 昆山西钛微电子科技有限公司 单片杯式旋转蚀刻装置
DE102012214316A1 (de) 2012-08-10 2014-02-13 Siltronic Ag Halterung für eine Vielzahl von scheibenförmigen Werkstücken
DE102013204830B4 (de) * 2013-03-19 2014-10-09 Siltronic Ag Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe mit einem Ätzmedium
CN104746146A (zh) * 2013-12-25 2015-07-01 新奥光伏能源有限公司 一种单晶硅片的制绒方法
US9562291B2 (en) * 2014-01-14 2017-02-07 Mei, Llc Metal etch system
CN104465464A (zh) * 2014-12-16 2015-03-25 中国电子科技集团公司第四十六研究所 一种小尺寸硫化镉单晶片超声清洗架
CN106540910A (zh) * 2016-12-09 2017-03-29 苏州爱彼光电材料有限公司 游星轮片清洗架
CN108206145B (zh) * 2016-12-20 2020-05-19 有研半导体材料有限公司 一种实现相邻晶圆对转的腐蚀装置及腐蚀方法
JP6860447B2 (ja) * 2017-02-15 2021-04-14 キオクシア株式会社 基板処理装置
DE102018103808A1 (de) * 2018-02-20 2019-08-22 AP&S International GmbH Vorrichtung zur stromlosen Metallisierung einer Zieloberfläche wenigstens eines Werkstücks
US12074041B2 (en) * 2018-06-29 2024-08-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench structure
CN111477561A (zh) * 2019-01-23 2020-07-31 弘塑科技股份有限公司 批次基板湿式处理装置及批次基板湿式处理方法
CN112435955B (zh) * 2019-08-26 2024-04-16 合肥晶合集成电路股份有限公司 一种晶圆裂片的支撑装置及其固定方法
CN111063642B (zh) * 2019-11-20 2023-04-14 至微半导体(上海)有限公司 具有限位功能的活动式多轴向连杆装置
CN110931401B (zh) * 2020-01-02 2022-06-03 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 晶圆片盒旋转装置及片盒旋转升降设备
CN113066753B (zh) * 2021-03-10 2024-05-17 北京北方华创微电子装备有限公司 晶片升降支撑装置及清洗设备
CN115990594A (zh) * 2021-10-19 2023-04-21 杭州众硅电子科技有限公司 一种用于清洗晶圆的排列式兆声清洗装置
CN116598252B (zh) * 2023-07-13 2023-10-03 南轩（天津）科技有限公司 一种用于硅片浸蚀均匀的旋转结构

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3473670A (en) 1968-01-30 1969-10-21 Fluoroware Inc Article supporting basket
US3782522A (en) 1972-09-18 1974-01-01 Fluoroware Inc Transfer mechanism
US3964957A (en) * 1973-12-19 1976-06-22 Monsanto Company Apparatus for processing semiconductor wafers
US3893869A (en) 1974-05-31 1975-07-08 Rca Corp Megasonic cleaning system
US4191295A (en) 1978-08-14 1980-03-04 Rca Corporation Processing rack
DE3435931A1 (de) 1984-09-29 1986-04-03 Bayer Ag, 5090 Leverkusen Verfahren zur entschwefelung von rauchgasen
JPS61228629A (ja) 1985-04-02 1986-10-11 Mitsubishi Electric Corp ウエハ等薄板体の表面処理装置
JPH0691062B2 (ja) 1985-04-24 1994-11-14 日本電気株式会社 半導体スライスの洗浄方法
WO1987006862A1 (en) 1986-05-16 1987-11-19 Eastman Kodak Company Ultrasonic cleaning method and apparatus
JPS62274730A (ja) 1986-05-23 1987-11-28 Nec Corp エツチング装置
JPS62281430A (ja) 1986-05-30 1987-12-07 Hitachi Electronics Eng Co Ltd 拡散前ウエハ洗浄方法および洗浄装置
JPH01143223A (ja) 1987-11-28 1989-06-05 Toshiba Corp 半導体基板の表面処理方法
FR2626261B1 (fr) 1988-01-26 1992-08-14 Recif Sa Appareil elevateur de plaquettes de silicium notamment
KR970011658B1 (ko) 1988-02-29 1997-07-12 도오교오 에레구토론 사가미 가부시끼가이샤 웨이퍼 지지장치
JPH01304733A (ja) 1988-06-01 1989-12-08 Mitsubishi Electric Corp 半導体ウエハの洗浄装置
KR910006087B1 (ko) 1988-06-29 1991-08-12 삼성반도체통신 주식회사 반도체 제조용 웨이퍼 세정기
US4927781A (en) 1989-03-20 1990-05-22 Miller Robert O Method of making a silicon integrated circuit waveguide
JPH0377347A (ja) 1989-08-19 1991-04-02 Mitsubishi Electric Corp ウエハのファセットアライメント方法
JPH03231428A (ja) 1990-02-07 1991-10-15 Hitachi Cable Ltd 半導体ウエハの洗浄方法
JPH03257826A (ja) 1990-03-07 1991-11-18 Shimada Phys & Chem Ind Co Ltd 半導体ウェハの洗浄方法
JPH0785471B2 (ja) 1990-10-16 1995-09-13 信越半導体株式会社 エッチング装置
US5275184A (en) 1990-10-19 1994-01-04 Dainippon Screen Mfg. Co., Ltd. Apparatus and system for treating surface of a wafer by dipping the same in a treatment solution and a gate device for chemical agent used in the apparatus and the system
JPH071796Y2 (ja) 1990-12-28 1995-01-18 大日本スクリーン製造株式会社 浸漬型基板処理装置
US5174045A (en) 1991-05-17 1992-12-29 Semitool, Inc. Semiconductor processor with extendible receiver for handling multiple discrete wafers without wafer carriers
JPH0555180A (ja) 1991-08-29 1993-03-05 Fujitsu Ltd 大型基板用リフトオフ装置とその調整方法
JPH05152277A (ja) 1991-11-27 1993-06-18 Nec Kansai Ltd ウエツトエツチング装置
JP3157030B2 (ja) 1992-01-31 2001-04-16 キヤノン株式会社 半導体基体とその作製方法
KR0163362B1 (ko) 1992-03-05 1999-02-01 이노우에 아키라 세정장치용 처리조
JP3018727B2 (ja) * 1992-04-15 2000-03-13 日本電気株式会社 半導体製造ウェット処理装置
JPH05335401A (ja) 1992-05-28 1993-12-17 Mitsubishi Electric Corp 半導体ウエハ用移送装置
JP3005117B2 (ja) 1992-06-26 2000-01-31 キヤノン株式会社 電子写真感光体用支持体の洗浄方法
JPH0621030A (ja) 1992-07-01 1994-01-28 Hitachi Cable Ltd 半導体ウエハの洗浄方法
JPH06168928A (ja) 1992-11-30 1994-06-14 Nec Kansai Ltd ウェーハ洗浄装置およびウェーハ洗浄方法
JPH0722495A (ja) 1993-06-29 1995-01-24 Kokusai Electric Co Ltd ウェーハ姿勢合わせ装置
US5356300A (en) 1993-09-16 1994-10-18 The Whitaker Corporation Blind mating guides with ground contacts
JPH07106292A (ja) 1993-09-29 1995-04-21 Kawasaki Steel Corp 半導体ウエハの洗浄装置
US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
JP2888409B2 (ja) 1993-12-14 1999-05-10 信越半導体株式会社 ウェーハ洗浄槽
US5520205A (en) 1994-07-01 1996-05-28 Texas Instruments Incorporated Apparatus for wafer cleaning with rotation
US5672212A (en) * 1994-07-01 1997-09-30 Texas Instruments Incorporated Rotational megasonic cleaner/etcher for wafers
JPH0878387A (ja) 1994-09-01 1996-03-22 Fujitsu Ltd 半導体装置の製造方法
US5593505A (en) * 1995-04-19 1997-01-14 Memc Electronic Materials, Inc. Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
JP3177729B2 (ja) 1995-05-12 2001-06-18 東京エレクトロン株式会社 処理装置
JPH0910709A (ja) 1995-06-30 1997-01-14 Dainippon Screen Mfg Co Ltd 基板処理装置
TW355815B (en) 1996-05-28 1999-04-11 Canon Kasei Kk Cleaning methods of porous surface and semiconductor surface
JPH10150013A (ja) 1996-11-20 1998-06-02 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH10223585A (ja) 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
TW504041U (en) 1997-02-21 2002-09-21 Canon Kk Wafer processing apparatus
JP3847935B2 (ja) 1998-01-09 2006-11-22 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法

Also Published As

Publication number Publication date
EP0856873B1 (en) 2004-10-20
SG73497A1 (en) 2000-06-20
TW473863B (en) 2002-01-21
CA2228571A1 (en) 1998-08-04
CN1192579A (zh) 1998-09-09
DE69827051D1 (de) 2004-11-25
CA2228571C (en) 2003-04-29
US6337030B1 (en) 2002-01-08
DE69827051T2 (de) 2005-09-08
KR19980071052A (ko) 1998-10-26
AU5289798A (en) 1998-08-06
ATE280435T1 (de) 2004-11-15
KR100416963B1 (ko) 2004-03-26
CN1108632C (zh) 2003-05-14
EP0856873A2 (en) 1998-08-05
EP0856873A3 (en) 2001-08-29
JPH10223585A (ja) 1998-08-21

Similar Documents

Publication Publication Date Title
AU722096B2 (en) Wafer processing apparatus, wafer processing method, and Soi wafer fabrication method
AU742258B2 (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
AU737593B2 (en) Porous region removing method and semiconductor substrate manufacturing method
US6767840B1 (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
EP0867918B1 (en) Process for producing semiconductor substrate
EP0940483A2 (en) Anodizing method and apparatus and semiconductor substrate manufacturing method
EP0553859B1 (en) Semiconductor substrate and process for producing the same
EP0603849B1 (en) Method for producing a semiconducteur substrate by using a bonding process
EP0938132B1 (en) Porous region removing method and semiconductor substrate manufacturing method
CN1166049A (zh) 用粘贴法制造soi基片的方法及soi基片
US6417069B1 (en) Substrate processing method and manufacturing method, and anodizing apparatus
JP3831878B2 (ja) ウェハ処理装置
JPH10229066A (ja) ウェハ処理装置及びその方法、ウェハ搬送ロボット、半導体基体の製造方法並びに半導体製造装置
JP3831877B2 (ja) 半導体基体の製造方法
JP2004247609A (ja) 基板の製造方法
JP2000133558A (ja) 半導体基体の作製方法およびそれにより作製された基体

Legal Events

Date Code Title Description
FGA Letters patent sealed or granted (standard patent)