ATE543334T1 - Festkörper-bildsensor mit reduzierter überstrahlung und farbverwischung - Google Patents
Festkörper-bildsensor mit reduzierter überstrahlung und farbverwischungInfo
- Publication number
- ATE543334T1 ATE543334T1 AT09726927T AT09726927T ATE543334T1 AT E543334 T1 ATE543334 T1 AT E543334T1 AT 09726927 T AT09726927 T AT 09726927T AT 09726927 T AT09726927 T AT 09726927T AT E543334 T1 ATE543334 T1 AT E543334T1
- Authority
- AT
- Austria
- Prior art keywords
- photoelectric converting
- conductivity type
- overradiation
- impurity region
- reduced
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 7
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008094999A JP5328207B2 (ja) | 2008-04-01 | 2008-04-01 | 固体撮像装置 |
PCT/JP2009/056763 WO2009123244A1 (en) | 2008-04-01 | 2009-03-25 | Solid-state image sensor with reduced blooming and colour mixing |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE543334T1 true ATE543334T1 (de) | 2012-02-15 |
Family
ID=40626755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09726927T ATE543334T1 (de) | 2008-04-01 | 2009-03-25 | Festkörper-bildsensor mit reduzierter überstrahlung und farbverwischung |
Country Status (8)
Country | Link |
---|---|
US (1) | US8670056B2 (de) |
EP (1) | EP2279614B1 (de) |
JP (1) | JP5328207B2 (de) |
KR (1) | KR101206589B1 (de) |
CN (2) | CN103178073A (de) |
AT (1) | ATE543334T1 (de) |
RU (1) | RU2444150C1 (de) |
WO (1) | WO2009123244A1 (de) |
Families Citing this family (31)
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JP5290923B2 (ja) | 2009-10-06 | 2013-09-18 | キヤノン株式会社 | 固体撮像装置および撮像装置 |
JP5564909B2 (ja) * | 2009-11-30 | 2014-08-06 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP5679653B2 (ja) | 2009-12-09 | 2015-03-04 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP5723094B2 (ja) * | 2009-12-11 | 2015-05-27 | キヤノン株式会社 | 固体撮像装置およびカメラ |
JP5558859B2 (ja) * | 2010-02-18 | 2014-07-23 | キヤノン株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
CN104133299B (zh) * | 2010-05-29 | 2017-08-04 | 蒋文宇 | 用于制造和使用具有自适应透镜的眼镜的系统、方法和设备 |
JP5697371B2 (ja) * | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5645513B2 (ja) | 2010-07-07 | 2014-12-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
WO2012169211A1 (ja) | 2011-06-09 | 2012-12-13 | パナソニック株式会社 | 光学素子とその製造方法 |
TWI505453B (zh) * | 2011-07-12 | 2015-10-21 | Sony Corp | 固態成像裝置,用於驅動其之方法,用於製造其之方法,及電子裝置 |
FR2979484A1 (fr) * | 2011-08-22 | 2013-03-01 | St Microelectronics Crolles 2 | Photosite a photodiode pincee |
JP5677238B2 (ja) * | 2011-08-29 | 2015-02-25 | 株式会社日立製作所 | 固体撮像装置 |
CN102437167A (zh) * | 2011-11-24 | 2012-05-02 | 上海宏力半导体制造有限公司 | 图像传感器、感光二极管 |
US9270908B2 (en) | 2013-02-05 | 2016-02-23 | Taiwan Semiconductor Manufacturing Company Limited | Image sensor configured to reduce blooming during idle period |
JP6355311B2 (ja) * | 2013-10-07 | 2018-07-11 | キヤノン株式会社 | 固体撮像装置、その製造方法及び撮像システム |
JP6541347B2 (ja) | 2014-03-27 | 2019-07-10 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP6548391B2 (ja) | 2014-03-31 | 2019-07-24 | キヤノン株式会社 | 光電変換装置および撮像システム |
JP2016051896A (ja) * | 2014-08-29 | 2016-04-11 | キヤノン株式会社 | 固体撮像装置及びその製造方法ならびにカメラ |
JP2016187018A (ja) | 2015-03-27 | 2016-10-27 | キヤノン株式会社 | 光電変換装置およびカメラ |
US9900539B2 (en) | 2015-09-10 | 2018-02-20 | Canon Kabushiki Kaisha | Solid-state image pickup element, and image pickup system |
JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
JP7005125B2 (ja) | 2016-04-22 | 2022-01-21 | キヤノン株式会社 | 撮像素子、撮像システム、および撮像素子の製造方法 |
JP6740067B2 (ja) | 2016-09-16 | 2020-08-12 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP6750876B2 (ja) | 2016-10-07 | 2020-09-02 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP6552478B2 (ja) | 2016-12-28 | 2019-07-31 | キヤノン株式会社 | 固体撮像装置 |
US10652531B2 (en) | 2017-01-25 | 2020-05-12 | Canon Kabushiki Kaisha | Solid-state imaging device, imaging system, and movable object |
JP7091080B2 (ja) | 2018-02-05 | 2022-06-27 | キヤノン株式会社 | 装置、システム、および移動体 |
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JP4054839B1 (ja) * | 2007-03-02 | 2008-03-05 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
EP2037667B1 (de) * | 2007-09-14 | 2017-08-23 | Canon Kabushiki Kaisha | Bildabtastvorrichtung und Bildgebungssystem |
JP4696104B2 (ja) * | 2007-09-28 | 2011-06-08 | 富士フイルム株式会社 | 裏面照射型固体撮像素子及びその製造方法 |
JP5142696B2 (ja) * | 2007-12-20 | 2013-02-13 | キヤノン株式会社 | 光電変換装置、及び光電変換装置を用いた撮像システム |
JP5142749B2 (ja) * | 2008-02-14 | 2013-02-13 | キヤノン株式会社 | 撮像装置、撮像装置の制御方法及び撮像システム |
JP5161676B2 (ja) * | 2008-07-07 | 2013-03-13 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5288955B2 (ja) * | 2008-09-09 | 2013-09-11 | キヤノン株式会社 | 固体撮像装置、撮像システム、および固体撮像装置の駆動方法 |
JP5264379B2 (ja) * | 2008-09-12 | 2013-08-14 | キヤノン株式会社 | 撮像装置、撮像システム及び撮像装置の動作方法 |
JP5478905B2 (ja) * | 2009-01-30 | 2014-04-23 | キヤノン株式会社 | 固体撮像装置 |
JP5558857B2 (ja) * | 2009-03-09 | 2014-07-23 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP5529613B2 (ja) * | 2009-04-17 | 2014-06-25 | キヤノン株式会社 | 光電変換装置及び撮像システム |
-
2008
- 2008-04-01 JP JP2008094999A patent/JP5328207B2/ja active Active
-
2009
- 2009-03-25 AT AT09726927T patent/ATE543334T1/de active
- 2009-03-25 CN CN2013100114830A patent/CN103178073A/zh active Pending
- 2009-03-25 WO PCT/JP2009/056763 patent/WO2009123244A1/en active Application Filing
- 2009-03-25 CN CN2009801116483A patent/CN101981919B/zh not_active Expired - Fee Related
- 2009-03-25 KR KR1020107023614A patent/KR101206589B1/ko active IP Right Grant
- 2009-03-25 US US12/935,313 patent/US8670056B2/en active Active
- 2009-03-25 EP EP09726927A patent/EP2279614B1/de not_active Not-in-force
- 2009-03-25 RU RU2010144609/07A patent/RU2444150C1/ru not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101981919B (zh) | 2013-02-20 |
CN103178073A (zh) | 2013-06-26 |
KR101206589B1 (ko) | 2012-11-29 |
RU2444150C1 (ru) | 2012-02-27 |
WO2009123244A1 (en) | 2009-10-08 |
EP2279614B1 (de) | 2012-01-25 |
JP2009252782A (ja) | 2009-10-29 |
US8670056B2 (en) | 2014-03-11 |
JP5328207B2 (ja) | 2013-10-30 |
US20110169989A1 (en) | 2011-07-14 |
KR20100126543A (ko) | 2010-12-01 |
CN101981919A (zh) | 2011-02-23 |
EP2279614A1 (de) | 2011-02-02 |
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