US5657332A
(en)
|
1992-05-20 |
1997-08-12 |
Sandisk Corporation |
Soft errors handling in EEPROM devices
|
US7012835B2
(en)
|
2003-10-03 |
2006-03-14 |
Sandisk Corporation |
Flash memory data correction and scrub techniques
|
US7490283B2
(en)
|
2004-05-13 |
2009-02-10 |
Sandisk Corporation |
Pipelined data relocation and improved chip architectures
|
KR101051703B1
(ko)
|
2004-08-09 |
2011-07-25 |
삼성전자주식회사 |
서스펜드/리쥼 기능을 갖는 집적 회로 카드 및 집적 회로카드 시스템
|
US7158421B2
(en)
*
|
2005-04-01 |
2007-01-02 |
Sandisk Corporation |
Use of data latches in multi-phase programming of non-volatile memories
|
US7849381B2
(en)
|
2004-12-21 |
2010-12-07 |
Sandisk Corporation |
Method for copying data in reprogrammable non-volatile memory
|
US7251160B2
(en)
*
|
2005-03-16 |
2007-07-31 |
Sandisk Corporation |
Non-volatile memory and method with power-saving read and program-verify operations
|
US7447078B2
(en)
*
|
2005-04-01 |
2008-11-04 |
Sandisk Corporation |
Method for non-volatile memory with background data latch caching during read operations
|
US7463521B2
(en)
*
|
2005-04-01 |
2008-12-09 |
Sandisk Corporation |
Method for non-volatile memory with managed execution of cached data
|
US7206230B2
(en)
*
|
2005-04-01 |
2007-04-17 |
Sandisk Corporation |
Use of data latches in cache operations of non-volatile memories
|
US7564713B2
(en)
*
|
2005-04-28 |
2009-07-21 |
Kabushiki Kaisha Toshiba |
Semiconductor integrated circuit device wherein during data write a potential transferred to each bit line is changed in accordance with program order of program data
|
EP1750278B1
(de)
*
|
2005-07-28 |
2009-11-11 |
STMicroelectronics S.r.l. |
Verfahren zur Programmierung einer Flash-Speichervorrichtung mit vier Zuständen und entsprechender Seitenspeicher
|
JP5162846B2
(ja)
*
|
2005-07-29 |
2013-03-13 |
ソニー株式会社 |
記憶装置、コンピュータシステム、および記憶システム
|
US20100302919A1
(en)
*
|
2005-10-27 |
2010-12-02 |
Mediatek Inc. |
Optical Recording Method and Apparatus
|
EP1850347A1
(de)
*
|
2006-04-28 |
2007-10-31 |
Deutsche Thomson-Brandt Gmbh |
Verfahren und Vorrichtung zum Schreiben auf einen Flash-Speicher
|
US7917685B2
(en)
*
|
2006-05-04 |
2011-03-29 |
Micron Technology, Inc. |
Method for reading a multilevel cell in a non-volatile memory device
|
WO2007130976A2
(en)
*
|
2006-05-05 |
2007-11-15 |
Sandisk Corporation |
Non-volatile memory with background data latch caching during program operations and methods therefor
|
WO2007131059A2
(en)
*
|
2006-05-05 |
2007-11-15 |
Sandisk Corporation |
Non-volatile memory with background data latch caching during erase operations and methods therefor
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
US7734861B2
(en)
|
2006-09-08 |
2010-06-08 |
Sandisk Corporation |
Pseudo random and command driven bit compensation for the cycling effects in flash memory
|
US7606966B2
(en)
*
|
2006-09-08 |
2009-10-20 |
Sandisk Corporation |
Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
|
US7885112B2
(en)
|
2007-09-07 |
2011-02-08 |
Sandisk Corporation |
Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
|
US7716538B2
(en)
*
|
2006-09-27 |
2010-05-11 |
Sandisk Corporation |
Memory with cell population distribution assisted read margining
|
US7886204B2
(en)
|
2006-09-27 |
2011-02-08 |
Sandisk Corporation |
Methods of cell population distribution assisted read margining
|
US7904619B2
(en)
|
2006-11-24 |
2011-03-08 |
Sandforce, Inc. |
System, method, and computer program product for reducing memory write operations using difference information
|
US7809900B2
(en)
*
|
2006-11-24 |
2010-10-05 |
Sandforce, Inc. |
System, method, and computer program product for delaying an operation that reduces a lifetime of memory
|
US7747813B2
(en)
*
|
2006-11-24 |
2010-06-29 |
Sandforce, Inc. |
Multi-memory device system and method for managing a lifetime thereof
|
US7904672B2
(en)
|
2006-12-08 |
2011-03-08 |
Sandforce, Inc. |
System and method for providing data redundancy after reducing memory writes
|
US7616506B2
(en)
*
|
2006-12-28 |
2009-11-10 |
Sandisk Corporation |
Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
|
US7616505B2
(en)
*
|
2006-12-28 |
2009-11-10 |
Sandisk Corporation |
Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations
|
US7499320B2
(en)
*
|
2007-03-07 |
2009-03-03 |
Sandisk Corporation |
Non-volatile memory with cache page copy
|
US7502255B2
(en)
*
|
2007-03-07 |
2009-03-10 |
Sandisk Corporation |
Method for cache page copy in a non-volatile memory
|
KR100813631B1
(ko)
*
|
2007-03-19 |
2008-03-14 |
삼성전자주식회사 |
읽기 성능을 향상시킬 수 있는 플래시 메모리 장치
|
US7477547B2
(en)
|
2007-03-28 |
2009-01-13 |
Sandisk Corporation |
Flash memory refresh techniques triggered by controlled scrub data reads
|
US7573773B2
(en)
*
|
2007-03-28 |
2009-08-11 |
Sandisk Corporation |
Flash memory with data refresh triggered by controlled scrub data reads
|
US7606072B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Non-volatile storage with compensation for source voltage drop
|
US7606071B2
(en)
*
|
2007-04-24 |
2009-10-20 |
Sandisk Corporation |
Compensating source voltage drop in non-volatile storage
|
KR100927119B1
(ko)
*
|
2007-05-10 |
2009-11-18 |
삼성전자주식회사 |
불 휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
|
JP2008310841A
(ja)
*
|
2007-06-12 |
2008-12-25 |
Panasonic Corp |
半導体記憶装置及び電子装置
|
US8365040B2
(en)
|
2007-09-20 |
2013-01-29 |
Densbits Technologies Ltd. |
Systems and methods for handling immediate data errors in flash memory
|
US8694715B2
(en)
|
2007-10-22 |
2014-04-08 |
Densbits Technologies Ltd. |
Methods for adaptively programming flash memory devices and flash memory systems incorporating same
|
US7903486B2
(en)
|
2007-11-19 |
2011-03-08 |
Sandforce, Inc. |
System, method, and computer program product for increasing a lifetime of a plurality of blocks of memory
|
US7849275B2
(en)
|
2007-11-19 |
2010-12-07 |
Sandforce, Inc. |
System, method and a computer program product for writing data to different storage devices based on write frequency
|
WO2009072100A2
(en)
|
2007-12-05 |
2009-06-11 |
Densbits Technologies Ltd. |
Systems and methods for temporarily retiring memory portions
|
WO2009074978A2
(en)
|
2007-12-12 |
2009-06-18 |
Densbits Technologies Ltd. |
Systems and methods for error correction and decoding on multi-level physical media
|
US8307180B2
(en)
|
2008-02-28 |
2012-11-06 |
Nokia Corporation |
Extended utilization area for a memory device
|
US7961512B2
(en)
*
|
2008-03-19 |
2011-06-14 |
Sandisk Corporation |
Adaptive algorithm in cache operation with dynamic data latch requirements
|
US7986554B2
(en)
|
2008-03-19 |
2011-07-26 |
Sandisk Technologies Inc. |
Different combinations of wordline order and look-ahead read to improve non-volatile memory performance
|
US8972472B2
(en)
|
2008-03-25 |
2015-03-03 |
Densbits Technologies Ltd. |
Apparatus and methods for hardware-efficient unbiased rounding
|
GB2474592B
(en)
|
2008-05-13 |
2013-01-23 |
Rambus Inc |
Fractional program commands for memory devices
|
US8130576B2
(en)
*
|
2008-06-30 |
2012-03-06 |
Intel Corporation |
Memory throughput increase via fine granularity of precharge management
|
US7729166B2
(en)
*
|
2008-07-02 |
2010-06-01 |
Mosaid Technologies Incorporated |
Multiple-bit per cell (MBC) non-volatile memory apparatus and system having polarity control and method of programming same
|
KR101395152B1
(ko)
|
2008-07-18 |
2014-05-15 |
삼성전자주식회사 |
비휘발성 메모리 셀, 비휘발성 메모리 장치 및 상기비휘발성 메모리 장치의 프로그래밍 방법
|
US7852671B2
(en)
*
|
2008-10-30 |
2010-12-14 |
Micron Technology, Inc. |
Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array
|
JP2012511789A
(ja)
*
|
2008-12-09 |
2012-05-24 |
ラムバス・インコーポレーテッド |
並行且つパイプライン化されたメモリ動作用の不揮発性メモリデバイス
|
US8819385B2
(en)
|
2009-04-06 |
2014-08-26 |
Densbits Technologies Ltd. |
Device and method for managing a flash memory
|
US8458574B2
(en)
|
2009-04-06 |
2013-06-04 |
Densbits Technologies Ltd. |
Compact chien-search based decoding apparatus and method
|
US8832353B2
(en)
*
|
2009-04-07 |
2014-09-09 |
Sandisk Technologies Inc. |
Host stop-transmission handling
|
JP5532671B2
(ja)
*
|
2009-05-08 |
2014-06-25 |
ソニー株式会社 |
データ記憶システムおよびデータ記憶方法、実行装置および制御方法、並びに制御装置および制御方法
|
US8874824B2
(en)
|
2009-06-04 |
2014-10-28 |
Memory Technologies, LLC |
Apparatus and method to share host system RAM with mass storage memory RAM
|
US8027195B2
(en)
*
|
2009-06-05 |
2011-09-27 |
SanDisk Technologies, Inc. |
Folding data stored in binary format into multi-state format within non-volatile memory devices
|
US8102705B2
(en)
|
2009-06-05 |
2012-01-24 |
Sandisk Technologies Inc. |
Structure and method for shuffling data within non-volatile memory devices
|
US8307241B2
(en)
*
|
2009-06-16 |
2012-11-06 |
Sandisk Technologies Inc. |
Data recovery in multi-level cell nonvolatile memory
|
US8132045B2
(en)
*
|
2009-06-16 |
2012-03-06 |
SanDisk Technologies, Inc. |
Program failure handling in nonvolatile memory
|
US20110002169A1
(en)
|
2009-07-06 |
2011-01-06 |
Yan Li |
Bad Column Management with Bit Information in Non-Volatile Memory Systems
|
US8180994B2
(en)
|
2009-07-08 |
2012-05-15 |
Sandisk Technologies Inc. |
Optimized page programming order for non-volatile memory
|
EP2457168B1
(de)
|
2009-07-20 |
2018-09-26 |
NXP USA, Inc. |
Signalverarbeitungssystem, integrierte schaltung mit puffersteuerlogik und verfahren dafür
|
US8516166B2
(en)
*
|
2009-07-20 |
2013-08-20 |
Lsi Corporation |
System, method, and computer program product for reducing a rate of data transfer to at least a portion of memory
|
JP5316299B2
(ja)
*
|
2009-08-07 |
2013-10-16 |
富士通セミコンダクター株式会社 |
半導体メモリ、システムおよび半導体メモリの動作方法
|
US8995197B1
(en)
|
2009-08-26 |
2015-03-31 |
Densbits Technologies Ltd. |
System and methods for dynamic erase and program control for flash memory device memories
|
US9330767B1
(en)
|
2009-08-26 |
2016-05-03 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Flash memory module and method for programming a page of flash memory cells
|
US8730729B2
(en)
|
2009-10-15 |
2014-05-20 |
Densbits Technologies Ltd. |
Systems and methods for averaging error rates in non-volatile devices and storage systems
|
US8724387B2
(en)
|
2009-10-22 |
2014-05-13 |
Densbits Technologies Ltd. |
Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
|
CN102612714B
(zh)
*
|
2009-11-13 |
2016-06-29 |
株式会社半导体能源研究所 |
半导体器件及其驱动方法
|
KR101636248B1
(ko)
*
|
2009-12-10 |
2016-07-06 |
삼성전자주식회사 |
플래시 메모리 장치, 이를 포함하는 플래시 메모리 시스템 및 이의 프로그램 방법
|
US8213243B2
(en)
*
|
2009-12-15 |
2012-07-03 |
Sandisk 3D Llc |
Program cycle skip
|
JP2011129176A
(ja)
*
|
2009-12-15 |
2011-06-30 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US8725935B2
(en)
|
2009-12-18 |
2014-05-13 |
Sandisk Technologies Inc. |
Balanced performance for on-chip folding of non-volatile memories
|
US8468294B2
(en)
*
|
2009-12-18 |
2013-06-18 |
Sandisk Technologies Inc. |
Non-volatile memory with multi-gear control using on-chip folding of data
|
US8144512B2
(en)
|
2009-12-18 |
2012-03-27 |
Sandisk Technologies Inc. |
Data transfer flows for on-chip folding
|
US9092340B2
(en)
*
|
2009-12-18 |
2015-07-28 |
Sandisk Technologies Inc. |
Method and system for achieving die parallelism through block interleaving
|
US9037777B2
(en)
|
2009-12-22 |
2015-05-19 |
Densbits Technologies Ltd. |
Device, system, and method for reducing program/read disturb in flash arrays
|
US8248850B2
(en)
*
|
2010-01-28 |
2012-08-21 |
Sandisk Technologies Inc. |
Data recovery for non-volatile memory based on count of data state-specific fails
|
US8107298B2
(en)
*
|
2010-01-29 |
2012-01-31 |
Sandisk Technologies Inc. |
Non-volatile memory with fast binary programming and reduced power consumption
|
JP2011187141A
(ja)
|
2010-03-10 |
2011-09-22 |
Toshiba Corp |
転送回路及びそれを用いた不揮発性半導体記憶装置
|
US8745317B2
(en)
|
2010-04-07 |
2014-06-03 |
Densbits Technologies Ltd. |
System and method for storing information in a multi-level cell memory
|
US20110252185A1
(en)
*
|
2010-04-08 |
2011-10-13 |
Silicon Storage Technology, Inc. |
Method Of Operating A NAND Memory Controller To Minimize Read Latency Time
|
US8416624B2
(en)
|
2010-05-21 |
2013-04-09 |
SanDisk Technologies, Inc. |
Erase and programming techniques to reduce the widening of state distributions in non-volatile memories
|
TW201212018A
(en)
*
|
2010-06-24 |
2012-03-16 |
Mediatek Inc |
Optical recording method and system
|
US8621321B2
(en)
|
2010-07-01 |
2013-12-31 |
Densbits Technologies Ltd. |
System and method for multi-dimensional encoding and decoding
|
US8305807B2
(en)
|
2010-07-09 |
2012-11-06 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8432732B2
(en)
|
2010-07-09 |
2013-04-30 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays
|
US8514630B2
(en)
|
2010-07-09 |
2013-08-20 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays: current based approach
|
US8310870B2
(en)
|
2010-08-03 |
2012-11-13 |
Sandisk Technologies Inc. |
Natural threshold voltage distribution compaction in non-volatile memory
|
WO2012021379A2
(en)
|
2010-08-10 |
2012-02-16 |
Rambus Inc. |
Verify before program resume for memory devices
|
US8964464B2
(en)
|
2010-08-24 |
2015-02-24 |
Densbits Technologies Ltd. |
System and method for accelerated sampling
|
US8675418B2
(en)
*
|
2010-08-31 |
2014-03-18 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Memory write assist
|
US8595414B2
(en)
*
|
2010-09-30 |
2013-11-26 |
Apple Inc. |
Selectively combining commands for a system having non-volatile memory
|
US9063878B2
(en)
|
2010-11-03 |
2015-06-23 |
Densbits Technologies Ltd. |
Method, system and computer readable medium for copy back
|
US8850100B2
(en)
|
2010-12-07 |
2014-09-30 |
Densbits Technologies Ltd. |
Interleaving codeword portions between multiple planes and/or dies of a flash memory device
|
KR20120066347A
(ko)
*
|
2010-12-14 |
2012-06-22 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그 구동 방법
|
US8472280B2
(en)
|
2010-12-21 |
2013-06-25 |
Sandisk Technologies Inc. |
Alternate page by page programming scheme
|
KR101212739B1
(ko)
|
2010-12-21 |
2012-12-14 |
에스케이하이닉스 주식회사 |
비휘발성 메모리장치 및 이의 동작방법
|
US8819328B2
(en)
|
2010-12-30 |
2014-08-26 |
Sandisk Technologies Inc. |
Controller and method for performing background operations
|
KR101861739B1
(ko)
*
|
2011-01-03 |
2018-05-29 |
삼성전자주식회사 |
출력 드라이버 및 이를 포함하는 장치들
|
KR20120091648A
(ko)
*
|
2011-02-09 |
2012-08-20 |
삼성전자주식회사 |
비휘발성 메모리, 이를 포함하는 시스템, 및 이의 프로그램 방법
|
US8631288B2
(en)
|
2011-03-14 |
2014-01-14 |
Micron Technology, Inc. |
Methods, devices, and systems for data sensing in a memory system
|
US8693258B2
(en)
*
|
2011-03-17 |
2014-04-08 |
Densbits Technologies Ltd. |
Obtaining soft information using a hard interface
|
US9342446B2
(en)
|
2011-03-29 |
2016-05-17 |
SanDisk Technologies, Inc. |
Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
|
US8990665B1
(en)
|
2011-04-06 |
2015-03-24 |
Densbits Technologies Ltd. |
System, method and computer program product for joint search of a read threshold and soft decoding
|
US8379454B2
(en)
|
2011-05-05 |
2013-02-19 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US9110785B1
(en)
|
2011-05-12 |
2015-08-18 |
Densbits Technologies Ltd. |
Ordered merge of data sectors that belong to memory space portions
|
US9396106B2
(en)
|
2011-05-12 |
2016-07-19 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Advanced management of a non-volatile memory
|
US8996790B1
(en)
|
2011-05-12 |
2015-03-31 |
Densbits Technologies Ltd. |
System and method for flash memory management
|
US9501392B1
(en)
|
2011-05-12 |
2016-11-22 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Management of a non-volatile memory module
|
US9372792B1
(en)
|
2011-05-12 |
2016-06-21 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Advanced management of a non-volatile memory
|
US9195592B1
(en)
|
2011-05-12 |
2015-11-24 |
Densbits Technologies Ltd. |
Advanced management of a non-volatile memory
|
US8843693B2
(en)
|
2011-05-17 |
2014-09-23 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with improved data scrambling
|
US8432740B2
(en)
|
2011-07-21 |
2013-04-30 |
Sandisk Technologies Inc. |
Program algorithm with staircase waveform decomposed into multiple passes
|
US8726104B2
(en)
|
2011-07-28 |
2014-05-13 |
Sandisk Technologies Inc. |
Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
|
US8775901B2
(en)
|
2011-07-28 |
2014-07-08 |
SanDisk Technologies, Inc. |
Data recovery for defective word lines during programming of non-volatile memory arrays
|
US8750042B2
(en)
|
2011-07-28 |
2014-06-10 |
Sandisk Technologies Inc. |
Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
|
US20130031431A1
(en)
|
2011-07-28 |
2013-01-31 |
Eran Sharon |
Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
|
US8630118B2
(en)
|
2011-11-09 |
2014-01-14 |
Sandisk Technologies Inc. |
Defective word line detection
|
US8842476B2
(en)
|
2011-11-09 |
2014-09-23 |
Sandisk Technologies Inc. |
Erratic program detection for non-volatile storage
|
US8687421B2
(en)
|
2011-11-21 |
2014-04-01 |
Sandisk Technologies Inc. |
Scrub techniques for use with dynamic read
|
WO2013095385A1
(en)
*
|
2011-12-20 |
2013-06-27 |
Intel Corporation |
Apparatus and method for phase change memory drift management
|
US8488382B1
(en)
|
2011-12-21 |
2013-07-16 |
Sandisk Technologies Inc. |
Erase inhibit for 3D non-volatile memory
|
US8996788B2
(en)
|
2012-02-09 |
2015-03-31 |
Densbits Technologies Ltd. |
Configurable flash interface
|
US8947941B2
(en)
|
2012-02-09 |
2015-02-03 |
Densbits Technologies Ltd. |
State responsive operations relating to flash memory cells
|
US8730722B2
(en)
|
2012-03-02 |
2014-05-20 |
Sandisk Technologies Inc. |
Saving of data in cases of word-line to word-line short in memory arrays
|
US8842473B2
(en)
|
2012-03-15 |
2014-09-23 |
Sandisk Technologies Inc. |
Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
|
US8897085B2
(en)
|
2012-03-19 |
2014-11-25 |
Sandisk Technologies Inc. |
Immunity against temporary and short power drops in non-volatile memory: pausing techniques
|
US9135192B2
(en)
|
2012-03-30 |
2015-09-15 |
Sandisk Technologies Inc. |
Memory system with command queue reordering
|
US9311226B2
(en)
*
|
2012-04-20 |
2016-04-12 |
Memory Technologies Llc |
Managing operational state data of a memory module using host memory in association with state change
|
US8996793B1
(en)
|
2012-04-24 |
2015-03-31 |
Densbits Technologies Ltd. |
System, method and computer readable medium for generating soft information
|
EP2842036B1
(de)
|
2012-04-27 |
2019-07-03 |
Hewlett-Packard Enterprise Development LP |
Lokale wiederanlaufkennzeichnung mittels einer mehrstufigen zelle
|
US8681548B2
(en)
|
2012-05-03 |
2014-03-25 |
Sandisk Technologies Inc. |
Column redundancy circuitry for non-volatile memory
|
US8838937B1
(en)
|
2012-05-23 |
2014-09-16 |
Densbits Technologies Ltd. |
Methods, systems and computer readable medium for writing and reading data
|
US8879325B1
(en)
|
2012-05-30 |
2014-11-04 |
Densbits Technologies Ltd. |
System, method and computer program product for processing read threshold information and for reading a flash memory module
|
US9015423B2
(en)
*
|
2012-06-14 |
2015-04-21 |
International Business Machines Corporation |
Reducing store operation busy times
|
US9075727B2
(en)
*
|
2012-06-14 |
2015-07-07 |
International Business Machines Corporation |
Reducing penalties for cache accessing operations
|
US8750045B2
(en)
|
2012-07-27 |
2014-06-10 |
Sandisk Technologies Inc. |
Experience count dependent program algorithm for flash memory
|
US8755226B2
(en)
*
|
2012-08-07 |
2014-06-17 |
Kabushiki Kaisha Toshiba |
Storage device and control method of nonvolatile memory
|
US9921954B1
(en)
|
2012-08-27 |
2018-03-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Method and system for split flash memory management between host and storage controller
|
US9135989B2
(en)
|
2012-09-06 |
2015-09-15 |
Sandisk Technologies Inc. |
Write data preservation for non-volatile storage
|
US9329986B2
(en)
|
2012-09-10 |
2016-05-03 |
Sandisk Technologies Inc. |
Peak current management in multi-die non-volatile memory devices
|
US9810723B2
(en)
|
2012-09-27 |
2017-11-07 |
Sandisk Technologies Llc |
Charge pump based over-sampling ADC for current detection
|
US9164526B2
(en)
|
2012-09-27 |
2015-10-20 |
Sandisk Technologies Inc. |
Sigma delta over-sampling charge pump analog-to-digital converter
|
US9076506B2
(en)
|
2012-09-28 |
2015-07-07 |
Sandisk Technologies Inc. |
Variable rate parallel to serial shift register
|
US8897080B2
(en)
|
2012-09-28 |
2014-11-25 |
Sandisk Technologies Inc. |
Variable rate serial to parallel shift register
|
US9490035B2
(en)
|
2012-09-28 |
2016-11-08 |
SanDisk Technologies, Inc. |
Centralized variable rate serializer and deserializer for bad column management
|
US8780634B2
(en)
|
2012-11-09 |
2014-07-15 |
Sandisk Technologies Inc. |
CAM NAND with OR function and full chip search capability
|
WO2014074483A2
(en)
|
2012-11-09 |
2014-05-15 |
Sandisk Technologies Inc. |
On-device data analytics using nand flash based intelligent memory
|
WO2014074496A2
(en)
|
2012-11-09 |
2014-05-15 |
Sandisk Technologies Inc. |
Cam nand with or function and full chip search capability
|
US8780633B2
(en)
|
2012-11-09 |
2014-07-15 |
SanDisk Technologies, Inc. |
De-duplication system using NAND flash based content addressable memory
|
US8780632B2
(en)
|
2012-11-09 |
2014-07-15 |
Sandisk Technologies Inc. |
De-duplication techniques using NAND flash based content addressable memory
|
US8811085B2
(en)
|
2012-11-09 |
2014-08-19 |
Sandisk Technologies Inc. |
On-device data analytics using NAND flash based intelligent memory
|
US8817541B2
(en)
|
2012-11-09 |
2014-08-26 |
Sandisk Technologies Inc. |
Data search using bloom filters and NAND based content addressable memory
|
US8634248B1
(en)
|
2012-11-09 |
2014-01-21 |
Sandisk Technologies Inc. |
On-device data analytics using NAND flash based intelligent memory
|
US8792279B2
(en)
|
2012-11-09 |
2014-07-29 |
Sandisk Technologies Inc. |
Architectures for data analytics using computational NAND memory
|
US8773909B2
(en)
|
2012-11-09 |
2014-07-08 |
Sandisk Technologies Inc. |
CAM NAND with or function and full chip search capability
|
US9116796B2
(en)
|
2012-11-09 |
2015-08-25 |
Sandisk Technologies Inc. |
Key-value addressed storage drive using NAND flash based content addressable memory
|
US8780635B2
(en)
|
2012-11-09 |
2014-07-15 |
Sandisk Technologies Inc. |
Use of bloom filter and improved program algorithm for increased data protection in CAM NAND memory
|
US9368225B1
(en)
|
2012-11-21 |
2016-06-14 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Determining read thresholds based upon read error direction statistics
|
US9171620B2
(en)
*
|
2012-11-29 |
2015-10-27 |
Sandisk Technologies Inc. |
Weighted read scrub for nonvolatile memory
|
KR20150098649A
(ko)
|
2012-12-22 |
2015-08-28 |
퀄컴 인코포레이티드 |
비-휘발성 메모리의 이용을 통한 휘발성 메모리의 전력 소비 감소
|
US9069659B1
(en)
|
2013-01-03 |
2015-06-30 |
Densbits Technologies Ltd. |
Read threshold determination using reference read threshold
|
US8710914B1
(en)
|
2013-02-08 |
2014-04-29 |
Sandisk Technologies Inc. |
Voltage regulators with improved wake-up response
|
US8928367B2
(en)
|
2013-02-28 |
2015-01-06 |
Sandisk Technologies Inc. |
Pre-charge circuit with reduced process dependence
|
US9075424B2
(en)
|
2013-03-06 |
2015-07-07 |
Sandisk Technologies Inc. |
Compensation scheme to improve the stability of the operational amplifiers
|
US9384839B2
(en)
|
2013-03-07 |
2016-07-05 |
Sandisk Technologies Llc |
Write sequence providing write abort protection
|
US9142270B2
(en)
|
2013-03-08 |
2015-09-22 |
Cypress Semiconductor Corporation |
Pipelining in a memory
|
US8947944B2
(en)
|
2013-03-15 |
2015-02-03 |
Sandisk 3D Llc |
Program cycle skip evaluation before write operations in non-volatile memory
|
US9037902B2
(en)
|
2013-03-15 |
2015-05-19 |
Sandisk Technologies Inc. |
Flash memory techniques for recovering from write interrupt resulting from voltage fault
|
US8947972B2
(en)
|
2013-03-15 |
2015-02-03 |
Sandisk 3D Llc |
Dynamic address grouping for parallel programming in non-volatile memory
|
US9047933B2
(en)
|
2013-04-22 |
2015-06-02 |
Sandisk Technologies Inc. |
High speed signaling techniques to improve performance of integrated circuits
|
FR3006094A1
(fr)
*
|
2013-05-21 |
2014-11-28 |
St Microelectronics Rousset |
Ecriture d'une memoire eeprom sur bus i2c
|
US9183940B2
(en)
|
2013-05-21 |
2015-11-10 |
Aplus Flash Technology, Inc. |
Low disturbance, power-consumption, and latency in NAND read and program-verify operations
|
FR3006097A1
(fr)
*
|
2013-05-21 |
2014-11-28 |
St Microelectronics Rousset |
Mecanisme d'ecriture d'une memoire eeprom sur bus i2c
|
KR20140142759A
(ko)
|
2013-05-31 |
2014-12-15 |
에스케이하이닉스 주식회사 |
비휘발성 메모리 장치 및 그의 동작방법과 비휘발성 메모리 장치를 포함하는 시스템
|
US9136876B1
(en)
|
2013-06-13 |
2015-09-15 |
Densbits Technologies Ltd. |
Size limited multi-dimensional decoding
|
WO2014210424A2
(en)
|
2013-06-27 |
2014-12-31 |
Aplus Flash Technology, Inc. |
Novel nand array architecture for multiple simultaneous program and read
|
US20150006784A1
(en)
|
2013-06-27 |
2015-01-01 |
Sandisk Technologies Inc. |
Efficient Post Write Read in Three Dimensional Nonvolatile Memory
|
US9195406B2
(en)
|
2013-06-28 |
2015-11-24 |
Micron Technology, Inc. |
Operation management in a memory device
|
US9063671B2
(en)
|
2013-07-02 |
2015-06-23 |
Sandisk Technologies Inc. |
Write operations with full sequence programming for defect management in nonvolatile memory
|
US9218242B2
(en)
|
2013-07-02 |
2015-12-22 |
Sandisk Technologies Inc. |
Write operations for defect management in nonvolatile memory
|
WO2015013689A2
(en)
|
2013-07-25 |
2015-01-29 |
Aplus Flash Technology, Inc. |
Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations
|
KR102133362B1
(ko)
|
2013-08-14 |
2020-07-15 |
삼성전자주식회사 |
비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템, 및 그것의 프로그램 방법
|
US8981750B1
(en)
|
2013-08-21 |
2015-03-17 |
Sandisk Technologies Inc. |
Active regulator wake-up time improvement by capacitive regulation
|
US9293205B2
(en)
|
2013-09-14 |
2016-03-22 |
Aplus Flash Technology, Inc |
Multi-task concurrent/pipeline NAND operations on all planes
|
US9165683B2
(en)
|
2013-09-23 |
2015-10-20 |
Sandisk Technologies Inc. |
Multi-word line erratic programming detection
|
US9413491B1
(en)
|
2013-10-08 |
2016-08-09 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
System and method for multiple dimension decoding and encoding a message
|
US9397706B1
(en)
|
2013-10-09 |
2016-07-19 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
System and method for irregular multiple dimension decoding and encoding
|
US9348694B1
(en)
|
2013-10-09 |
2016-05-24 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Detecting and managing bad columns
|
US9786388B1
(en)
|
2013-10-09 |
2017-10-10 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Detecting and managing bad columns
|
US9711225B2
(en)
|
2013-10-16 |
2017-07-18 |
Sandisk Technologies Llc |
Regrouping and skipping cycles in non-volatile memory
|
US9043537B1
(en)
|
2013-11-21 |
2015-05-26 |
Sandisk Technologies Inc. |
Update block programming order
|
US9218891B2
(en)
*
|
2013-11-27 |
2015-12-22 |
Silicon Motion, Inc. |
Data storage device and flash memory control method
|
US9058881B1
(en)
|
2013-12-05 |
2015-06-16 |
Sandisk Technologies Inc. |
Systems and methods for partial page programming of multi level cells
|
US9244631B2
(en)
|
2013-12-06 |
2016-01-26 |
Sandisk Technologies Inc. |
Lower page only host burst writes
|
US9280419B2
(en)
|
2013-12-16 |
2016-03-08 |
International Business Machines Corporation |
Dynamic adjustment of data protection schemes in flash storage systems based on temperature, power off duration and flash age
|
US9613704B2
(en)
|
2013-12-25 |
2017-04-04 |
Aplus Flash Technology, Inc |
2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify
|
US9536612B1
(en)
|
2014-01-23 |
2017-01-03 |
Avago Technologies General Ip (Singapore) Pte. Ltd |
Digital signaling processing for three dimensional flash memory arrays
|
KR102187521B1
(ko)
|
2014-01-28 |
2020-12-08 |
삼성전자주식회사 |
불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템 및 불휘발성 메모리에 데이터를 프로그램하는 프로그램 방법
|
US10120792B1
(en)
|
2014-01-29 |
2018-11-06 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Programming an embedded flash storage device
|
US9437302B2
(en)
|
2014-02-06 |
2016-09-06 |
Sandisk Technologies Llc |
State-dependent lockout in non-volatile memory
|
US9230689B2
(en)
|
2014-03-17 |
2016-01-05 |
Sandisk Technologies Inc. |
Finding read disturbs on non-volatile memories
|
US8902652B1
(en)
|
2014-05-13 |
2014-12-02 |
Sandisk Technologies Inc. |
Systems and methods for lower page writes
|
US8886877B1
(en)
|
2014-05-15 |
2014-11-11 |
Sandisk Technologies Inc. |
In-situ block folding for nonvolatile memory
|
US9542262B1
(en)
|
2014-05-29 |
2017-01-10 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Error correction
|
US9892033B1
(en)
|
2014-06-24 |
2018-02-13 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Management of memory units
|
US9584159B1
(en)
|
2014-07-03 |
2017-02-28 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Interleaved encoding
|
US9972393B1
(en)
|
2014-07-03 |
2018-05-15 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Accelerating programming of a flash memory module
|
US9449702B1
(en)
|
2014-07-08 |
2016-09-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Power management
|
US9514835B2
(en)
|
2014-07-10 |
2016-12-06 |
Sandisk Technologies Llc |
Determination of word line to word line shorts between adjacent blocks
|
US9484086B2
(en)
|
2014-07-10 |
2016-11-01 |
Sandisk Technologies Llc |
Determination of word line to local source line shorts
|
US9443612B2
(en)
|
2014-07-10 |
2016-09-13 |
Sandisk Technologies Llc |
Determination of bit line to low voltage signal shorts
|
US9460809B2
(en)
|
2014-07-10 |
2016-10-04 |
Sandisk Technologies Llc |
AC stress mode to screen out word line to word line shorts
|
WO2016014731A1
(en)
|
2014-07-22 |
2016-01-28 |
Aplus Flash Technology, Inc. |
Yukai vsl-based vt-compensation for nand memory
|
US9202593B1
(en)
|
2014-09-02 |
2015-12-01 |
Sandisk Technologies Inc. |
Techniques for detecting broken word lines in non-volatile memories
|
US9240249B1
(en)
|
2014-09-02 |
2016-01-19 |
Sandisk Technologies Inc. |
AC stress methods to screen out bit line defects
|
US9449694B2
(en)
|
2014-09-04 |
2016-09-20 |
Sandisk Technologies Llc |
Non-volatile memory with multi-word line select for defect detection operations
|
TWI559320B
(zh)
*
|
2014-09-10 |
2016-11-21 |
東芝股份有限公司 |
半導體儲存裝置
|
US9275714B1
(en)
*
|
2014-09-26 |
2016-03-01 |
Qualcomm Incorporated |
Read operation of MRAM using a dummy word line
|
US9552171B2
(en)
|
2014-10-29 |
2017-01-24 |
Sandisk Technologies Llc |
Read scrub with adaptive counter management
|
US9934872B2
(en)
|
2014-10-30 |
2018-04-03 |
Sandisk Technologies Llc |
Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
|
US9978456B2
(en)
|
2014-11-17 |
2018-05-22 |
Sandisk Technologies Llc |
Techniques for reducing read disturb in partially written blocks of non-volatile memory
|
US9524211B1
(en)
|
2014-11-18 |
2016-12-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Codeword management
|
US9349479B1
(en)
|
2014-11-18 |
2016-05-24 |
Sandisk Technologies Inc. |
Boundary word line operation in nonvolatile memory
|
US9224502B1
(en)
|
2015-01-14 |
2015-12-29 |
Sandisk Technologies Inc. |
Techniques for detection and treating memory hole to local interconnect marginality defects
|
US10305515B1
(en)
|
2015-02-02 |
2019-05-28 |
Avago Technologies International Sales Pte. Limited |
System and method for encoding using multiple linear feedback shift registers
|
US10032524B2
(en)
|
2015-02-09 |
2018-07-24 |
Sandisk Technologies Llc |
Techniques for determining local interconnect defects
|
US9564215B2
(en)
|
2015-02-11 |
2017-02-07 |
Sandisk Technologies Llc |
Independent sense amplifier addressing and quota sharing in non-volatile memory
|
US9449700B2
(en)
|
2015-02-13 |
2016-09-20 |
Sandisk Technologies Llc |
Boundary word line search and open block read methods with reduced read disturb
|
US9269446B1
(en)
|
2015-04-08 |
2016-02-23 |
Sandisk Technologies Inc. |
Methods to improve programming of slow cells
|
US9564219B2
(en)
|
2015-04-08 |
2017-02-07 |
Sandisk Technologies Llc |
Current based detection and recording of memory hole-interconnect spacing defects
|
KR20160127524A
(ko)
|
2015-04-27 |
2016-11-04 |
에스케이하이닉스 주식회사 |
메모리 시스템 및 메모리 시스템의 동작 방법
|
KR102282196B1
(ko)
|
2015-04-28 |
2021-07-27 |
삼성전자 주식회사 |
비휘발성 메모리 장치, 메모리 시스템 및 그것의 동작 방법
|
WO2016182753A1
(en)
*
|
2015-05-08 |
2016-11-17 |
Sandisk Technologies Llc |
Data mapping for non-volatile storage
|
US10628255B1
(en)
|
2015-06-11 |
2020-04-21 |
Avago Technologies International Sales Pte. Limited |
Multi-dimensional decoding
|
JP6359491B2
(ja)
*
|
2015-06-12 |
2018-07-18 |
東芝メモリ株式会社 |
半導体記憶装置
|
US9851921B1
(en)
|
2015-07-05 |
2017-12-26 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Flash memory chip processing
|
US9659666B2
(en)
|
2015-08-31 |
2017-05-23 |
Sandisk Technologies Llc |
Dynamic memory recovery at the sub-block level
|
US9653154B2
(en)
|
2015-09-21 |
2017-05-16 |
Sandisk Technologies Llc |
Write abort detection for multi-state memories
|
US9858009B2
(en)
|
2015-10-26 |
2018-01-02 |
Sandisk Technologies Llc |
Data folding in 3D nonvolatile memory
|
US9711211B2
(en)
|
2015-10-29 |
2017-07-18 |
Sandisk Technologies Llc |
Dynamic threshold voltage compaction for non-volatile memory
|
KR20170050953A
(ko)
*
|
2015-11-02 |
2017-05-11 |
에스케이하이닉스 주식회사 |
메모리 시스템 및 그의 동작방법
|
KR102435027B1
(ko)
|
2015-11-09 |
2022-08-23 |
삼성전자주식회사 |
불휘발성 메모리 장치 및 그것의 읽기 방법
|
US10671291B2
(en)
|
2015-11-17 |
2020-06-02 |
Hewlett Packard Enterprise Development Lp |
Iterative write sequence interrupt
|
KR20170057902A
(ko)
|
2015-11-17 |
2017-05-26 |
에스케이하이닉스 주식회사 |
메모리 시스템 및 메모리 시스템의 동작 방법
|
US9954558B1
(en)
|
2016-03-03 |
2018-04-24 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Fast decoding of data stored in a flash memory
|
US9698676B1
(en)
|
2016-03-11 |
2017-07-04 |
Sandisk Technologies Llc |
Charge pump based over-sampling with uniform step size for current detection
|
US9996280B2
(en)
|
2016-03-15 |
2018-06-12 |
Sandisk Technologies Llc |
Data register copying for non-volatile storage array operations
|
US10394487B2
(en)
|
2016-07-21 |
2019-08-27 |
SK Hynix Inc. |
Memory system and operating method thereof
|
US9898229B1
(en)
|
2016-07-29 |
2018-02-20 |
Sandisk Technologies Llc |
Systems and methods of memory reads
|
JP2018041154A
(ja)
*
|
2016-09-05 |
2018-03-15 |
東芝メモリ株式会社 |
ストレージシステムおよび処理方法
|
US9767914B1
(en)
|
2016-10-10 |
2017-09-19 |
Wingyu Leung |
Durable maintenance of memory cell electric current sense window following program-erase operations to a non-volatile memory
|
CN106502919B
(zh)
*
|
2016-10-11 |
2019-05-31 |
上海东软载波微电子有限公司 |
一种Flash闪存的写操作方法及装置
|
US10379940B2
(en)
|
2016-12-08 |
2019-08-13 |
Sandisk Technologies Llc |
Pipeline delay detection during decoding by a data storage device
|
KR102639697B1
(ko)
|
2017-01-09 |
2024-02-21 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그 프로그램 방법
|
JP6783682B2
(ja)
*
|
2017-02-27 |
2020-11-11 |
キオクシア株式会社 |
半導体記憶装置及びメモリシステム
|
JP2019029045A
(ja)
*
|
2017-07-26 |
2019-02-21 |
東芝メモリ株式会社 |
半導体記憶装置
|
KR102631353B1
(ko)
*
|
2017-08-17 |
2024-01-31 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 이의 동작 방법
|
US10283205B2
(en)
|
2017-09-30 |
2019-05-07 |
Micron Technology, Inc. |
Preemptive idle time read scans
|
KR20190090268A
(ko)
*
|
2018-01-24 |
2019-08-01 |
에스케이하이닉스 주식회사 |
메모리 컨트롤러 및 이를 포함하는 메모리 시스템
|
US10642746B2
(en)
|
2018-03-22 |
2020-05-05 |
Western Digital Technologies, Inc. |
Controlling cached/non-cached memory access decisions based on memory access queue fill levels
|
KR20200023758A
(ko)
*
|
2018-08-27 |
2020-03-06 |
에스케이하이닉스 주식회사 |
메모리 시스템 및 그것의 동작방법
|
JP2020047335A
(ja)
|
2018-09-18 |
2020-03-26 |
キオクシア株式会社 |
不揮発性メモリ及びメモリシステム
|
KR20200034312A
(ko)
*
|
2018-09-21 |
2020-03-31 |
에스케이하이닉스 주식회사 |
데이터 저장 장치 및 그것의 동작 방법
|
US11055184B2
(en)
|
2018-12-19 |
2021-07-06 |
Vmware, Inc. |
In-place garbage collection of a sharded, replicated distributed state machine based on supersedable operations
|
US11360704B2
(en)
*
|
2018-12-21 |
2022-06-14 |
Micron Technology, Inc. |
Multiplexed signal development in a memory device
|
US10877881B2
(en)
*
|
2019-01-11 |
2020-12-29 |
Vmware, Inc. |
In-place garbage collection of a sharded, replicated distributed state machine based on mergeable operations
|
KR102713393B1
(ko)
|
2019-02-11 |
2024-10-04 |
삼성전자주식회사 |
비휘발성 메모리 장치 및 그 동작 방법
|
KR20200139496A
(ko)
|
2019-06-04 |
2020-12-14 |
에스케이하이닉스 주식회사 |
메모리 장치 및 이의 동작 방법
|
US10811082B1
(en)
|
2019-06-24 |
2020-10-20 |
Sandisk Technologies Llc |
Non-volatile memory with fast data cache transfer scheme
|
US10825526B1
(en)
*
|
2019-06-24 |
2020-11-03 |
Sandisk Technologies Llc |
Non-volatile memory with reduced data cache buffer
|
US11152054B2
(en)
|
2019-08-28 |
2021-10-19 |
Micron Technology, Inc. |
Apparatuses and methods for performing background operations in memory using sensing circuitry
|
US11681797B2
(en)
|
2019-08-28 |
2023-06-20 |
Micron Technology, Inc. |
Row activation prevention using fuses
|
KR20210060867A
(ko)
*
|
2019-11-19 |
2021-05-27 |
에스케이하이닉스 주식회사 |
데이터 저장 장치 및 그것의 동작 방법
|
CN111400201B
(zh)
*
|
2020-03-19 |
2022-08-16 |
合肥兆芯电子有限公司 |
快闪存储器的数据整理方法、存储装置及控制电路单元
|
US11288011B2
(en)
|
2020-03-26 |
2022-03-29 |
Western Digital Technologies, Inc. |
Non-volatile memory array with write failure protection for multi-level cell (MLC) storage elements using coupled writes
|
KR20220001137A
(ko)
|
2020-06-29 |
2022-01-05 |
에스케이하이닉스 주식회사 |
메모리 시스템, 메모리 장치 및 메모리 장치의 동작 방법
|
US11816343B2
(en)
*
|
2020-11-30 |
2023-11-14 |
Western Digital Technologies, Inc. |
Data storage device enabling latches of non-volatile memory dies for use as externally-accessible volatile memory
|
CN112466372B
(zh)
*
|
2020-12-23 |
2021-12-21 |
芯天下技术股份有限公司 |
一种小尺寸Latch单元电路及Flash芯片
|
CN113409852A
(zh)
*
|
2021-06-17 |
2021-09-17 |
芯天下技术股份有限公司 |
一种提高闪存编程效率的方法、装置、存储介质和终端
|
US11651800B2
(en)
*
|
2021-06-22 |
2023-05-16 |
Sandisk Technologies Llc |
Sense amplifier mapping and control scheme for non-volatile memory
|
US11776599B2
(en)
*
|
2021-09-24 |
2023-10-03 |
Advanced Micro Devices, Inc. |
Encoded enable clock gaters
|
US20240062821A1
(en)
*
|
2022-08-18 |
2024-02-22 |
Yangtze Memory Technologies Co., Ltd. |
Memory device and read operation during suspension of program operation thereof
|
US12046267B2
(en)
|
2022-08-25 |
2024-07-23 |
Sandisk Technologies Llc |
Advanced window program-verify
|