ATE380892T1 - Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp - Google Patents

Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp

Info

Publication number
ATE380892T1
ATE380892T1 AT02724773T AT02724773T ATE380892T1 AT E380892 T1 ATE380892 T1 AT E380892T1 AT 02724773 T AT02724773 T AT 02724773T AT 02724773 T AT02724773 T AT 02724773T AT E380892 T1 ATE380892 T1 AT E380892T1
Authority
AT
Austria
Prior art keywords
tube
cooling
melt
drop
drop tube
Prior art date
Application number
AT02724773T
Other languages
English (en)
Inventor
Josuke Nakata
Original Assignee
Josuke Nakata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Josuke Nakata filed Critical Josuke Nakata
Application granted granted Critical
Publication of ATE380892T1 publication Critical patent/ATE380892T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0004—Crystallisation cooling by heat exchange
    • B01D9/0013—Crystallisation cooling by heat exchange by indirect heat exchange
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0036—Crystallisation on to a bed of product crystals; Seeding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glanulating (AREA)
  • Silicon Compounds (AREA)
  • Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
AT02724773T 2002-05-13 2002-05-13 Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp ATE380892T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/004620 WO2003095719A1 (fr) 2002-05-13 2002-05-13 Dispositif de production de cristaux granulaires de type pour tube de descente

Publications (1)

Publication Number Publication Date
ATE380892T1 true ATE380892T1 (de) 2007-12-15

Family

ID=29416524

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02724773T ATE380892T1 (de) 2002-05-13 2002-05-13 Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp

Country Status (12)

Country Link
US (1) US7198672B2 (de)
EP (1) EP1510602B1 (de)
JP (1) JPWO2003095719A1 (de)
KR (1) KR100717700B1 (de)
CN (1) CN1318663C (de)
AT (1) ATE380892T1 (de)
AU (1) AU2002255348B8 (de)
CA (1) CA2483108C (de)
DE (1) DE60224104T2 (de)
ES (1) ES2294131T3 (de)
TW (1) TW555902B (de)
WO (1) WO2003095719A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006123403A1 (ja) * 2005-05-17 2006-11-23 Kyosemi Corporation 粒状結晶体製造装置
JP4817307B2 (ja) * 2006-06-06 2011-11-16 独立行政法人産業技術総合研究所 粒状半導体の製造方法及び製造装置
CN107589145B (zh) * 2017-09-04 2020-08-25 西北工业大学 一种金属液滴的微重力凝固装置
CN107695359B (zh) * 2017-09-06 2020-03-31 西北工业大学 微重力与液淬集成的金属液滴凝固方法
CN108168994B (zh) * 2017-11-27 2020-03-20 西北工业大学 一种在自由下落条件下金属液滴凝固的装置
CN111230130B (zh) * 2020-03-02 2021-09-07 西北工业大学 微重力条件下悬浮大尺寸金属液滴的快速凝固系统与方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
US4322379A (en) 1977-02-07 1982-03-30 Texas Instruments Incorporated Fabrication process for semiconductor bodies
US4829019A (en) * 1987-05-12 1989-05-09 Texas Instruments Incorporated Method for increasing source/drain to channel stop breakdown and decrease P+/N+ encroachment
JP3231244B2 (ja) 1996-07-22 2001-11-19 仗祐 中田 無機材料製の球状体の製造方法及びその製造装置
DE69637769D1 (de) * 1996-10-09 2009-01-15 Josuke Nakata Halbleitervorrichtung
EP0940860B1 (de) * 1997-08-27 2003-10-15 Josuke Nakata Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial
EP0947613B1 (de) * 1997-10-23 2003-07-30 Josuke Nakata Verfahren und vorrichtung zur herstellung von einkristallen
US6264742B1 (en) * 1998-07-10 2001-07-24 Ball Semiconductor Inc. Single crystal processing by in-situ seed injection
US6106614A (en) * 1998-10-15 2000-08-22 Starmet Corp Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
JP2000169279A (ja) * 1998-12-10 2000-06-20 Komatsu Electronic Metals Co Ltd 球状半導体結晶製造方法及び製造装置
US7001543B2 (en) * 2001-10-23 2006-02-21 Kyocera Corporation Apparatus and method for manufacturing semiconductor grains

Also Published As

Publication number Publication date
DE60224104D1 (de) 2008-01-24
DE60224104T2 (de) 2008-12-04
AU2002255348A1 (en) 2003-11-11
CA2483108A1 (en) 2003-11-20
KR100717700B1 (ko) 2007-05-11
CN1318663C (zh) 2007-05-30
EP1510602B1 (de) 2007-12-12
US20060070652A1 (en) 2006-04-06
CN1625613A (zh) 2005-06-08
AU2002255348B8 (en) 2009-05-21
EP1510602A1 (de) 2005-03-02
AU2002255348B2 (en) 2006-08-24
TW555902B (en) 2003-10-01
WO2003095719A1 (fr) 2003-11-20
EP1510602A4 (de) 2006-10-11
KR20040108810A (ko) 2004-12-24
ES2294131T3 (es) 2008-04-01
US7198672B2 (en) 2007-04-03
CA2483108C (en) 2008-09-16
JPWO2003095719A1 (ja) 2005-09-15

Similar Documents

Publication Publication Date Title
BRPI0710313A2 (pt) método para a purificação de silìcio
TWI449770B (zh) 使用熔融顆粒製造由矽構成的單晶體的方法
ATE380892T1 (de) Vorrichtung zur herstellung von körnigen kristallen vom fallrohrtyp
KR880701150A (ko) 용융재료를 과립상화(granulation)하기 위한 방법과 장치
JPH10273310A (ja) 石英ルツボに融着した残留多結晶シリコンの回収方法と装置
JPS598611A (ja) 高純度シリコン粒状体の製造方法および装置
KR20050070097A (ko) 페놀성 화합물의 비즈 및 이를 수득하는 방법
JP2006206368A (ja) 粒状シリコンの製造方法及び製造装置
US1704611A (en) Method of precipitating solid substances in coarse granular condition from solutions
JP4074931B2 (ja) シリコン球状体の製造方法及びその製造装置
TW200641191A (en) Manufacturing device of granular single crystal
JPH06107580A (ja) ビスフェノールａプリルの製造方法
JPS6017008B2 (ja) アルミニウムの精製方法
JPS61279603A (ja) 低融点合金粒体の製造方法
JP2007284321A (ja) 粒状シリコンの製造方法及び製造装置
JPH0474801A (ja) 球状低融点合金粒体の製造方法
JP3733362B2 (ja) はんだ回収方法及びはんだ回収装置
JP4016903B2 (ja) 金属ガリウムの精製方法
JP2004075507A (ja) 顆粒状三塩化ガリウムの製造方法
JPH01155188A (ja) Ｐｔ、Ｐｄ系貴金属粒状塊製造用保持炉
JPH10500066A (ja) 化学物質の晶出方法
OHNO et al. Effect of the Surface Vibration on the Structure of Ingots
JPH0437121B2 (de)
JPH0978152A (ja) アルミニウムスクラップの精製方法
JPH0135882B2 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties